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11. 发明申请

US20050266682A1 Methods and apparatus for forming barrier layers in high aspect ratio vias 审中-公开
公开(公告)号：US20050266682A1
公开(公告)日：2005-12-01
申请号：US11185248
申请日：2005-07-19
申请人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
发明人： Fusen Chen , Ling Chen , Walter Glenn , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C14/02 , C23C14/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/44 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/022 , C23C14/046 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76873
摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

12. 发明授权

US06790326B2 Magnetron for a vault shaped sputtering target having two opposed sidewall magnets 有权
标题翻译：用于具有两个相对的侧壁磁体的拱形溅射靶的磁控管
公开(公告)号：US06790326B2
公开(公告)日：2004-09-14
申请号：US10171318
申请日：2002-06-13
申请人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
发明人： Anantha Subramani , Umesh Kelkar , Jianming Fu , Praburam Gopalraja
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/3455
摘要： A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.
摘要翻译：一种等离子体溅射反应器，其包括具有环形拱顶的靶，其表面面向待溅射涂覆的晶片，并且具有内侧壁和外侧壁以及顶部。在管状内侧壁之间的靶的后部形成有孔。与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管关于目标的中心轴。

13. 发明授权

US06485618B2 Integrated copper fill process 有权
标题翻译：综合铜填充工艺
公开(公告)号：US06485618B2
公开(公告)日：2002-11-26
申请号：US09917985
申请日：2001-07-30
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1434
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

14. 发明授权

US06436251B2 Vault-shaped target and magnetron having both distributed and localized magnets 失效
标题翻译：具有分布和局部磁体的穹形靶和磁控管
公开(公告)号：US06436251B2
公开(公告)日：2002-08-20
申请号：US09854281
申请日：2001-05-11
申请人： Praburam Gopalraja , Jianming Fu , Wei Wang
发明人： Praburam Gopalraja , Jianming Fu , Wei Wang
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。嵌套的磁铁沿拱顶旋转。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

15. 发明授权

US06413382B1 Pulsed sputtering with a small rotating magnetron 有权
标题翻译：用小旋转磁控管进行脉冲溅射
公开(公告)号：US06413382B1
公开(公告)日：2002-07-02
申请号：US09705324
申请日：2000-11-03
申请人： Wei Wang , Praburam Gopalraja , Jianming Fu , Zheng Xu
发明人： Wei Wang , Praburam Gopalraja , Jianming Fu , Zheng Xu
IPC分类号： C23C1435
CPC分类号： H01J37/3444 , H01J37/3408 , H01J37/3455
摘要： A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.
摘要翻译：一种磁控溅射反应器，其具有以小于10％且优选小于1％的占空比脉冲的靶，并且还具有面积小于目标区域围绕目标中心旋转的20％的面积的小磁控管，由此非常在与磁控管区域相邻的脉冲期间产生高等离子体密度。功率脉冲频率需要与旋转频率不同步，从而磁控管在不同脉冲期间不会覆盖磁控管的相同区域。有利地，功率脉冲在DC背景水平之上传送足以继续激发等离子体，使得每个脉冲不需要点火。

16. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

17. 发明申请

US20090053888A1 Method of depositing a diffusion barrier layer which provides an improved interconnect 审中-公开
标题翻译：沉积扩散阻挡层的方法，其提供改进的互连
公开(公告)号：US20090053888A1
公开(公告)日：2009-02-26
申请号：US12288540
申请日：2008-10-20
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/02183 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/02266 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.
摘要翻译：一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

18. 发明申请

US20070241458A1 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US20070241458A1
公开(公告)日：2007-10-18
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

19. 发明申请

US20060251872A1 Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof 审中-公开
标题翻译：导电阻挡层，特别是钌和钽的合金，并进行溅射沉积
公开(公告)号：US20060251872A1
公开(公告)日：2006-11-09
申请号：US11124611
申请日：2005-05-05
申请人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
发明人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
IPC分类号： B32B3/00
CPC分类号： B32B15/018 , C23C14/3414 , H01L21/2855 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
摘要翻译：用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。阻挡层包括难熔贵金属合金如钌/钽合金的导电金属，其可以是无定形的，尽管不需要这样。阻挡层可以从类似组成的靶溅射。阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。铜高贵种子层可以由铜和钌的合金形成，与电介质上的阻挡层接触。

20. 发明申请

US20050056536A1 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US20050056536A1
公开(公告)日：2005-03-17
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

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