会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明申请
    • NITRIDE SEMICONDUCTOR DEVICE
    • 氮化物半导体器件
    • US20130069117A1
    • 2013-03-21
    • US13619560
    • 2012-09-14
    • Akira YOSHIOKAYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • Akira YOSHIOKAYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • H01L29/778
    • H01L29/2003H01L29/0619H01L29/1066H01L29/4236H01L29/42364H01L29/7787
    • A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
    • 氮化物半导体器件包括衬底,第一In x1Ga1-x1-y1Aly1N层,第二Inx2Ga1-x2-y2Aly2N层,层间绝缘膜,源电极,漏电极,第一栅电极,肖特基电极,第二 栅电极,互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极,肖特基电极和第二栅电极。
    • 19. 发明授权
    • Computer system, storage device, management server and communication control method
    • 计算机系统,存储设备,管理服务器和通信控制方法
    • US07680953B2
    • 2010-03-16
    • US11359377
    • 2006-02-23
    • Tetsuya ShiroganeKenichi TsukijiTetsuya OhnoNaoto Matsunami
    • Tetsuya ShiroganeKenichi TsukijiTetsuya OhnoNaoto Matsunami
    • G06F15/173
    • H04L67/1097G06F3/0601G06F2003/0697H04L69/40
    • The invention provides a communication control method for switching paths at high speed to switch storages without a special path switching means in a host computer, without stopping an application or without changing settings, and a device for realizing the same. The present computer system comprises a host computer 20, a storage devices 10 connected via a network 30 to the host computer 20, and a name server 40, wherein the host computer 20 has a function to search for an alternate path when a defect is discovered in a path used for connection with the storage 10, and the storage device 10 has a target communicating with the host computer 20 through a port, a registration change means for changing a registered address associated with the registration of a migration source target registered in the name server 40 to an address of a migration destination port, and a means for disconnecting all communication means established with the migration source target subsequent to the registration change process.
    • 本发明提供了一种用于在不停止应用或不改变设置的情况下高速切换路径以切换存储器而不需要主计算机中的专用路径切换装置的通信控制方法,以及用于实现其的装置。 本计算机系统包括主计算机20,经由网络30连接到主计算机20的存储装置10以及名称服务器40,其中主计算机20具有在发现缺陷时搜索替代路径的功能 在用于与存储器10连接的路径中,存储装置10具有通过端口与主计算机20通信的目标;登记变更装置,用于改变与登记在主机计算机20中的迁移源目标的登记有关的登记地址 名称服务器40到迁移目的地端口的地址,以及用于在注册改变处理之后断开与迁移源目标建立的所有通信装置的装置。