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    • 3. 发明申请
    • NITRIDE SEMICONDUCTOR DEVICE
    • 氮化物半导体器件
    • US20130069117A1
    • 2013-03-21
    • US13619560
    • 2012-09-14
    • Akira YOSHIOKAYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • Akira YOSHIOKAYasunobu SaitoHidetoshi FujimotoTetsuya OhnoWataru Saito
    • H01L29/778
    • H01L29/2003H01L29/0619H01L29/1066H01L29/4236H01L29/42364H01L29/7787
    • A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
    • 氮化物半导体器件包括衬底,第一In x1Ga1-x1-y1Aly1N层,第二Inx2Ga1-x2-y2Aly2N层,层间绝缘膜,源电极,漏电极,第一栅电极,肖特基电极,第二 栅电极,互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极,肖特基电极和第二栅电极。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS
    • 具有氮化物层的半导体器件
    • US20130248928A1
    • 2013-09-26
    • US13605814
    • 2012-09-06
    • Akira YOSHIOKAYasunobu SaitoWataru Saito
    • Akira YOSHIOKAYasunobu SaitoWataru Saito
    • H01L29/78
    • H01L29/475H01L21/8252H01L27/0605H01L27/0676H01L27/0688H01L27/0727H01L29/2003H01L29/4175H01L29/66462H01L29/7787H01L29/78H01L29/872
    • According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
    • 根据一个实施例,提供了具有半导体衬底,氮化物的第一至第四半导体层,第一至第三电极和栅电极的半导体器件。 第一半导体层直接设置在半导体衬底上,或者经由缓冲层设置在其上。 第二半导体层被设置为与第一半导体层间隔开。 第三半导体层设置在第二半导体层上,并且具有比第二半导体层宽的带隙。 第四半导体层使第一和第二半导体层绝缘。 第一电极与第一至第三半导体层形成欧姆结。 第二电极设置在第三半导体层上。 栅电极设置在第一和第二电极之间。 第三电极与第一半导体层形成肖特基结。