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1. 发明授权

US08575656B2 Semiconductor device having nitride layers 失效
标题翻译：具有氮化物层的半导体器件
公开(公告)号：US08575656B2
公开(公告)日：2013-11-05
申请号：US13605814
申请日：2012-09-06
申请人： Akira Yoshioka , Yasunobu Saito , Wataru Saito
发明人： Akira Yoshioka , Yasunobu Saito , Wataru Saito
IPC分类号： H01L31/06 , H01L29/66
CPC分类号： H01L29/475 , H01L21/8252 , H01L27/0605 , H01L27/0676 , H01L27/0688 , H01L27/0727 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872
摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
摘要翻译：根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。第二半导体层被设置为与第一半导体层间隔开。第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。第四半导体层使第一和第二半导体层绝缘。第一电极与第一至第三半导体层形成欧姆结。第二电极设置在第三半导体层上。栅电极设置在第一和第二电极之间。第三电极与第一半导体层形成肖特基结。

2. 发明授权

US08227834B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227834B2
公开(公告)日：2012-07-24
申请号：US13218925
申请日：2011-08-26
申请人： Yasunobu Saito , Wataru Saito , Yorito Kakiuchi , Tomohiro Nitta , Akira Yoshioka , Tetsuya Ohno , Hidetoshi Fujimoto , Takao Noda
发明人： Yasunobu Saito , Wataru Saito , Yorito Kakiuchi , Tomohiro Nitta , Akira Yoshioka , Tetsuya Ohno , Hidetoshi Fujimoto , Takao Noda
IPC分类号： H01L29/80
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
摘要翻译：一种半导体器件包括：包含Al x Ga 1-x N（0＆amp; N e; X 1; n 1; 1）的第一半导体层; 设置在第一半导体层上的第二半导体层，包括AlYGa1-YN（0＆lt; nlE; Y＆nlE; 1，X

3. 发明申请

US20100314666A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100314666A1
公开(公告)日：2010-12-16
申请号：US12757528
申请日：2010-04-09
申请人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
发明人： Wataru SAITO , Yasunobu SAITO , Takao NODA , Hidetoshi FUJIMOTO , Tetsuya OHNO
IPC分类号： H01L29/205
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/7787
摘要： A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体构成的第一层; 第二层，设置在第一层上，由与第一氮化物半导体相比具有更大带隙的第二氮化物半导体构成; 电连接到第二层的第一电极; 设置在所述第二层上并沿第一方向与所述第一电极并置的第二电极; 以及设置在所述第二层上的浮置电极，所述浮置电极包括：在与所述第一方向正交的第二方向上被所述第二电极夹持的部分; 以及从第二电极朝向第一电极突出的部分。

4. 发明申请

US20090200576A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090200576A1
公开(公告)日：2009-08-13
申请号：US12371216
申请日：2009-02-13
申请人： Yasunobu Saito , Wataru Saito , Yorito Kakiuchi , Tomohiro Nitta , Akira Yoshioka , Tetsuya Ohno , Hidetoshi Fujimoto , Takao Noda
发明人： Yasunobu Saito , Wataru Saito , Yorito Kakiuchi , Tomohiro Nitta , Akira Yoshioka , Tetsuya Ohno , Hidetoshi Fujimoto , Takao Noda
IPC分类号： H01L29/80 , H01L29/861
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
摘要翻译：一种半导体器件包括：包含Al x Ga 1-x N（0 <= X 1）的第一半导体层; 设置在第一半导体层上的第二半导体层，包括AlYGa1-YN（0≤Y≤1，X

5. 发明申请

US20080116486A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080116486A1
公开(公告)日：2008-05-22
申请号：US11939976
申请日：2007-11-14
申请人： Wataru SAITO , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
发明人： Wataru SAITO , Akira Yoshioka , Hidetoshi Fujimoto , Takao Noda , Yasunobu Saito , Tomohiro Nitta , Yorito Kakiuchi
IPC分类号： H01L29/80
CPC分类号： H01L29/045 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0≦x≦1); a second semiconductor layer of n-type AlyGa1-yN (0
摘要翻译：一种半导体器件包括：p型Al x Ga 1-x N（0 <= x <= 1）的第一半导体层; 在第一半导体层上形成的n型Al y Ga 1-y N（0

6. 发明申请

US20080023706A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20080023706A1
公开(公告)日：2008-01-31
申请号：US11782914
申请日：2007-07-25
申请人： Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
发明人： Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
IPC分类号： H01L29/15
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 kΩ/cm or more.
摘要翻译：氮化物半导体器件包括：含有Si的衬底; 设置在基板上并由氮化物半导体材料制成的沟道层; 阻挡层，设置在沟道层上，由氮化物半导体材料制成; 连接到所述阻挡层的第一和第二主电极; 以及设置在阻挡层上的第一主电极和第二主电极之间的控制电极。衬底包括至少一层具有1kOmega / cm以上的电阻率的层。

7. 发明申请

US20060128119A1 Semiconductor device fabrication method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20060128119A1
公开(公告)日：2006-06-15
申请号：US11282664
申请日：2005-11-21
申请人： Yasunobu Saito , Toru Sugiyama
发明人： Yasunobu Saito , Toru Sugiyama
IPC分类号： H01L21/78 , H01L21/461
CPC分类号： H01L21/78 , H01L21/76885
摘要： According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a circuit pattern of a semiconductor element and a ground pad connected to a ground interconnection of said circuit pattern, in a semiconductor chip region divided into a plurality of portions on a main surface of a semiconductor substrate; forming a separation groove in a separation region for separating a plurality of semiconductor chips; forming a metal film so as to cover the main surface of said semiconductor substrate; forming an insulating film so as to cover said metal film on the main surface of said semiconductor substrate and fill said separation groove; etching an entire surface of said insulating film to leave said insulating film behind on a bottom of said separation groove; forming a metal layer connected to said ground pad via said metal film, and extending to an upper end of said insulating film on the bottom of said separation groove; and polishing a back surface of said semiconductor substrate until the bottom of said separation groove is exposed, and cutting the semiconductor chip region from said separation groove, thereby separating said plurality of semiconductor chips.
摘要翻译：根据本发明，提供了一种半导体器件的制造方法，包括：在分成多个部分的半导体芯片区域中形成半导体元件的电路图案和连接到所述电路图案的接地互连的接地焊盘半导体衬底的主表面; 在用于分离多个半导体芯片的分离区域中形成分离槽; 形成金属膜以覆盖所述半导体衬底的主表面; 形成绝缘膜以覆盖所述半导体衬底的主表面上的所述金属膜并填充所述分离槽; 蚀刻所述绝缘膜的整个表面以将所述绝缘膜留在所述分离槽的底部上; 通过所述金属膜形成连接到所述接地焊盘的金属层，并延伸到所述隔离槽底部的所述绝缘膜的上端; 并抛光所述半导体衬底的背面，直到所述分离槽的底部露出，并从所述分隔槽切割半导体芯片区域，从而分离所述多个半导体芯片。

8. 发明授权

US08664696B2 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US08664696B2
公开(公告)日：2014-03-04
申请号：US13052881
申请日：2011-03-21
申请人： Akira Yoshioka , Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno
发明人： Akira Yoshioka , Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778
CPC分类号： H01L29/7783 , H01L21/28264 , H01L21/743 , H01L29/0847 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/7787 , H01L29/78
摘要： According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一，第二和第三半导体层，第一和第二主电极和控制电极。在基板上设置由第一导电类型的氮化物半导体制成的第一层。由第二导电类型的氮化物半导体制成的第二层设置在第一层上。在第二层上设置由氮化物半导体构成的第三层。第一电极与第二层电连接。第二电极设置在与第一电极相距一定距离处并与第二层电连接。控制电极经由绝缘膜设置在第一沟槽内。第一沟槽设置在第一和第二主电极之间，穿过第三层和第二层，并到达第一层。

9. 发明授权

US08581301B2 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US08581301B2
公开(公告)日：2013-11-12
申请号：US13599951
申请日：2012-08-30
申请人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno , Toshiyuki Naka
发明人： Wataru Saito , Yasunobu Saito , Hidetoshi Fujimoto , Akira Yoshioka , Tetsuya Ohno , Toshiyuki Naka
IPC分类号： H01L29/10
CPC分类号： H01L27/0727 , H01L21/8252 , H01L27/0207 , H01L27/0605 , H01L27/0629 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/7786 , H01L29/872 , H01L2924/0002 , H02M3/155 , H02M3/33569 , H02M2001/007 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.
摘要翻译：根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非掺杂氮化物半导体形成，第二氮化物半导体层设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。

10. 发明申请

US20130248928A1 SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS 失效
标题翻译：具有氮化物层的半导体器件
公开(公告)号：US20130248928A1
公开(公告)日：2013-09-26
申请号：US13605814
申请日：2012-09-06
申请人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
IPC分类号： H01L29/78
CPC分类号： H01L29/475 , H01L21/8252 , H01L27/0605 , H01L27/0676 , H01L27/0688 , H01L27/0727 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872
摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
摘要翻译：根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。第二半导体层被设置为与第一半导体层间隔开。第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。第四半导体层使第一和第二半导体层绝缘。第一电极与第一至第三半导体层形成欧姆结。第二电极设置在第三半导体层上。栅电极设置在第一和第二电极之间。第三电极与第一半导体层形成肖特基结。

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