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11. 发明授权

US07542208B2 Light collecting device and light collecting mirror 有权
标题翻译：集光装置和集光镜
公开(公告)号：US07542208B2
公开(公告)日：2009-06-02
申请号：US11578067
申请日：2005-04-13
申请人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
发明人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
IPC分类号： G02B27/10 , G02B5/10
CPC分类号： G02B19/0057 , G02B19/0028 , G02B27/0977 , G02B27/143
摘要： A beam-condensing unit has a first light source, a second light source, and a condenser mirror. The first and second light sources output a plurality of first and second light fluxes arrayed along a first direction, respectively. A condenser mirror has first and second optical plates that intersect with each other. The first optical plate includes a plurality of first reflecting portions that are arrayed along the first direction and reflect the first light fluxes, respectively. The second optical plate includes a plurality of second reflecting portions that are arrayed along the first direction alternately with the first reflecting portions and reflect the second light fluxes, respectively.
摘要翻译：光束聚光单元具有第一光源，第二光源和聚光镜。第一和第二光源分别输出沿着第一方向排列的多个第一和第二光束。聚光镜具有彼此相交的第一和第二光学板。第一光学板包括沿着第一方向排列并分别反射第一光束的多个第一反射部分。第二光学板包括多个第二反射部分，它们沿着第一方向与第一反射部分交替排列并分别反射第二光束。

12. 发明申请

US20080144683A1 VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER DEVICE 有权
标题翻译：垂直孔表面发射半导体激光器件
公开(公告)号：US20080144683A1
公开(公告)日：2008-06-19
申请号：US11679349
申请日：2007-02-27
申请人： Kouji NAKAHARA , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
发明人： Kouji NAKAHARA , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译：其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。

13. 发明授权

US07340142B1 Integrated optoelectronic device and method of fabricating the same 有权
标题翻译：集成光电子器件及其制造方法
公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02F1/035 , G02F1/295 , G02B6/26 , G02B6/10 , G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

14. 发明授权

US5064257A Optical heterodyne scanning type holography device 失效
标题翻译：光外差扫描型全息装置
公开(公告)号：US5064257A
公开(公告)日：1991-11-12
申请号：US505605
申请日：1990-04-06
申请人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
发明人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
IPC分类号： G02F1/03 , G03H1/00 , G03H1/04 , G03H1/10 , G03H1/22
CPC分类号： G03H1/10 , G03H1/00 , G03H2001/0088 , G03H2001/0463 , G03H2225/20
摘要： There is disclosed an optical heterodyne scanning holography device capable of recording and reconstructing a holographic image of an object in real time by optical heterodyne-scanning the object, capturing a scattered wave from the object by a photodetector, and converting a heterodyne output current from the photodetector to a spatial light modulator for coherent processing optically.
摘要翻译：公开了一种光学外差扫描全息装置，其能够通过光学外差扫描物体实时记录和重建物体的全息图像，通过光电检测器从物体捕获散射波，并将外差输出电流从光电探测器用于空间光调制器，用于光学相干处理。

15. 发明授权

US4763996A Spatial light modulator 失效
标题翻译：空间光调制器
公开(公告)号：US4763996A
公开(公告)日：1988-08-16
申请号：US798932
申请日：1985-11-18
申请人： Tsutomu Hara , Yoshiharu Ooi , Kazunori Shinoda , Koji Ichie
发明人： Tsutomu Hara , Yoshiharu Ooi , Kazunori Shinoda , Koji Ichie
IPC分类号： G02F1/03 , H04N1/032 , H04N1/23
CPC分类号： H04N1/032 , G02F1/0333 , H04N1/23
摘要： A crystal structure arrangement used in a spatial light modulator wherein an electrooptic crystal structure faces an electron beam source, such as a photocathode or an electron gun, within a vacuum envelope. Electrons emitted from the electron beam source in response to an image or image signal source are stored on the surface of the electrooptic crystal structure to form a charge image thereon and then to change the refractive index of the electrooptic crystal structure corresponding to the stored charge image. The refractive index change is read out using a laser beam or incandescent light beam.
摘要翻译：在空间光调制器中使用的晶体结构布置，其中电光晶体结构在真空外壳内面对诸如光电阴极或电子枪的电子束源。响应于图像或图像信号源从电子束源发射的电子被存储在电光晶体结构的表面上以在其上形成电荷图像，然后改变对应于存储的电荷图像的电光晶体结构的折射率。使用激光束或白炽光束读出折射率变化。

16. 发明授权

US08855160B2 Horizontal-cavity surface-emitting laser 有权
标题翻译：水平腔表面发射激光器
公开(公告)号：US08855160B2
公开(公告)日：2014-10-07
申请号：US13512595
申请日：2010-11-29
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
IPC分类号： H01S5/18 , H01S5/40 , H01S5/022 , H01S5/22 , H01S5/042 , H01S5/12 , H01S5/026
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译：具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1）设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2）位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

17. 发明授权

US5844931A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US5844931A
公开(公告)日：1998-12-01
申请号：US903881
申请日：1997-07-31
申请人： Misuzu Sagawa , Kiyohisa Hiramoto , Tomonobu Tsuchiya , Takashi Toyonaka , Kazunori Shinoda
发明人： Misuzu Sagawa , Kiyohisa Hiramoto , Tomonobu Tsuchiya , Takashi Toyonaka , Kazunori Shinoda
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/32 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/16 , H01S5/168 , H01S5/22 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
摘要翻译：半导体激光器，不会由于电涌而引起突然的故障。由GaAs缓冲层形成的脊，与GaAs衬底晶格匹配的n-InGaP包层，应变量子阱有源层，与GaAs衬底晶格匹配的p-InGaP包层在n-GaAs衬底上埋设n-InGaP电流型p型GaAs波导层，与GaAs衬底晶格匹配的p-InGaP包覆层和p-GaAs覆盖层，阻挡层。器件条纹由器件中的电流注入区域和小面附近的电流非注入区域构成。

18. 发明授权

US5805316A Twin-image elimination apparatus and method 失效
标题翻译：双图像消除装置和方法
公开(公告)号：US5805316A
公开(公告)日：1998-09-08
申请号：US705971
申请日：1996-08-30
申请人： Kazunori Shinoda , Ting-Chung Poon , Ming Hsien Wu , Yoshiji Suzuki
发明人： Kazunori Shinoda , Ting-Chung Poon , Ming Hsien Wu , Yoshiji Suzuki
IPC分类号： G03H1/10 , G03H1/00 , G03H1/22
CPC分类号： G03H1/22 , G03H1/0443 , G03H2001/0088 , G03H2001/0463 , G03H2001/262 , G03H2225/20 , G03H2225/33 , G03H2225/60
摘要： The twin-image elimination apparatus of the present invention comprises (a) a scanning light source for emitting a scanning light beam; (b) an interference device which converts the scanning light beam from the scanning light source into a spherical wave and a plane wave having temporal frequencies different from each other and combines the spherical and plane waves together; (c) a scanner for scanning an object with the combined light beam from the interference device; (d) a photodetector for detecting a scattered wave from the object; (e) a first multiplier which converts an output signal of the photodetector into a cosine-coded holographic information; (f) a second multiplier which converts the output signal of the photodetector into a sine-coded holographic information; and (g) a holographic reconstruction device which converts output signals of the first and second multipliers into a sum signal, in which these output signals are added together with a phase difference of .pi./2+2n.pi. (wherein n is an integer not less than 0), so as to reproduce an image of the object without the presence of its twin image. Hence, at the time of reconstructing a hologram, the virtual image component contained in the output signal of the photodetector can be removed, thereby improving the image quality of the reconstructed image.
摘要翻译：本发明的双图像消除装置包括：（a）用于发射扫描光束的扫描光源; （b）将来自扫描光源的扫描光束转换为球面波的干涉装置和具有彼此不同的时间频率的平面波，并将球面和平面波组合在一起; （c）用来自干涉装置的组合光束扫描物体的扫描仪; （d）用于检测来自物体的散射波的光检测器; （e）将所述光电检测器的输出信号转换为余弦编码的全息信息的第一乘法器; （f）将光电检测器的输出信号转换为正弦编码的全息信息的第二乘法器; 和（g）将第一和第二乘法器的输出信号转换为和信号的全息重建装置，其中这些输出信号以pi / 2 + 2n pi的相位差加在一起（其中n是不小于整数的整数）比0），以便在没有其双重图像的情况下再现对象的图像。因此，在重建全息图时，可以去除包含在光电检测器的输出信号中的虚拟图像分量，从而提高重建图像的图像质量。

19. 发明申请

US20090129421A1 SEMICONDUCTOR LASER DIODE 有权
标题翻译：半导体激光二极管
公开(公告)号：US20090129421A1
公开(公告)日：2009-05-21
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/323
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

20. 发明授权

US06989550B2 Distributed feedback semiconductor laser equipment employing a grating 有权
标题翻译：采用光栅的分布式反馈半导体激光设备
公开(公告)号：US06989550B2
公开(公告)日：2006-01-24
申请号：US10606834
申请日：2003-06-27
申请人： Kouji Nakahara , Tomonobu Tsuchiya , Akira Taike , Kazunori Shinoda
发明人： Kouji Nakahara , Tomonobu Tsuchiya , Akira Taike , Kazunori Shinoda
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/1231 , H01S5/2009 , H01S5/3409 , H01S5/34313
摘要： The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107.
摘要翻译：具有InGaAlAs有源层的现有技术的分布式反馈激光器涉及由于器件电阻高而使其激光特性在高温下劣化的问题。根据本发明，通过在n型InP衬底101上形成InGaAlAs-MQW层104来制造脊型激光器; 在InGaAlAs-MQW层104上依次生长p型InGaAlAs-GRIN-SCH层105，p型InAlAs电子阻挡层106和p型光栅层107; 形成光栅; 并依次重新生长p型InP包覆层108和p型InGaAs接触层。光栅的凹深小于p型光栅层107的厚度。

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