会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 15. 发明授权
    • Magnetron atomization source and method of use thereof
    • 磁控管雾化源及其使用方法
    • US06776881B2
    • 2004-08-17
    • US10253429
    • 2002-09-25
    • Pius GruenenfelderHans HirscherUrs SchwendenerWalter Haag
    • Pius GruenenfelderHans HirscherUrs SchwendenerWalter Haag
    • C23C1435
    • H01J37/3405
    • For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.
    • 为了优化磁控管雾化源上的雾化物质的产率,源侧的处理空间主要由靶体的雾化表面壁化。 磁控管雾化源具有相对于至少一个平面具有镜对称的,凹入构造的雾化表面的目标体,以及可操作以在雾化表面上产生磁场的磁路布置。 磁路装置包括阳极装置,接收框架,其围绕目标主体的边缘延伸并相对于其电绝缘。 接收框架具有用于待涂覆的至少一个工件的接收开口。 磁控管源可用于提供具有雾化涂层的存储盘,例如CD。
    • 17. 发明授权
    • Magnetron sputtering source and method of use thereof
    • 磁控溅射源及其使用方法
    • US06540883B1
    • 2003-04-01
    • US09243814
    • 1999-02-03
    • Pius GruenenfelderHans HirscherWalter HaagWalter Albertin
    • Pius GruenenfelderHans HirscherWalter HaagWalter Albertin
    • C23C1400
    • H01J37/3408
    • A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R1F and a second larger radius R2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d1 and d2. A value d assumes all possible values of d1 and d2. In particular, 0.8≦(R2F−R1F)/d≦3.0 and preferably 1.0≦(R2F−R1F)/d≦2.2 The arrangement defines a sputtering geometry with the process space with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion.
    • 一种磁控溅射源及其使用方法,溅射源具有至少两个环形磁控管电子抽头,每个限定了沿溅射源的表面沿径向方向的最大磁场强度分量。 因此,从第一较小半径R1F和第二较大半径R2F上的环形区域的每一个处,面对溅射源的保持器中的工件的平面具有对应的距离d1和d2。 值d假定d1和d2的所有可能值。 特别地,该装置定义了具有具有相应限定的浓缩等离子体夹杂物的限定的双同心窄等离子体放电的工艺空间的溅射几何形状。