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11. 发明申请

US20110169035A1 SMALL SIZE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：小尺寸发光装置及其制造方法
公开(公告)号：US20110169035A1
公开(公告)日：2011-07-14
申请号：US13070014
申请日：2011-03-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/44 , H01L33/62 , H01L33/64
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

12. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

13. 发明授权

US06265324B1 Method of manufacturing semiconductor device and mask for forming thin film pattern 失效
标题翻译：制造半导体器件的方法和用于形成薄膜图案的掩模
公开(公告)号：US06265324B1
公开(公告)日：2001-07-24
申请号：US09315234
申请日：1999-05-20
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yasuo Miyano , Koutarou Ogura
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yasuo Miyano , Koutarou Ogura
IPC分类号： H01L2131
CPC分类号： C23C14/042
摘要： A mask 11 for vapor deposition is made of glass. Through-holes 15 are formed in the glass mask 11 so that they make a prescribed pattern on the surface of a semiconductor substrate 4. The peripheral wall of the through-hole is tapered so that the opening face 15b from which evaporated atoms are introduced is larger than the opening face 15a facing the deposition surface of the semiconductor substrate. The evaporated metal atoms having flied aslant toward the opening face 15b from which the evaporated atoms are introduced can pass through the through-hole 14 so that the evaporated metal atoms are deposited on the deposition surface of the semiconductor substrate. A desired thin film pattern inclusive of an electrode pattern can be easily formed on the surface of a semiconductor substrate, thereby improving the production yield of a semiconductor device.
摘要翻译：用于气相沉积的掩模11由玻璃制成。在玻璃掩模11中形成通孔15，使得它们在半导体衬底4的表面上形成规定的图案。通孔的周壁是锥形的，使得引入蒸发原子的开口面15b为大于面向半导体衬底的沉积表面的开口面15a。向被引入蒸发原子的开口面15b倾斜倾斜的蒸发金属原子可以通过通孔14，使得蒸发的金属原子沉积在半导体衬底的沉积表面上。可以容易地在半导体衬底的表面上形成包括电极图案的期望的薄膜图案，从而提高半导体器件的制造成品率。

14. 发明授权

US6107644A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
申请人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , H01L33/38 , H01L27/15
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/32
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译：半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。提供与暴露的第二导电类型电连接的第二电极。第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。

15. 发明授权

US08796050B2 Method and apparatus for manufacturing white light-emitting device 有权
标题翻译：白光发光装置的制造方法及装置
公开(公告)号：US08796050B2
公开(公告)日：2014-08-05
申请号：US13338678
申请日：2011-12-28
申请人： Cheol-jun Yoo , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
发明人： Cheol-jun Yoo , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
IPC分类号： H01L33/50 , H01L33/00 , H01L21/67 , H01L21/683
CPC分类号： B05C1/027 , H01L21/6715 , H01L21/6838 , H01L33/0079 , H01L33/50 , H01L2933/0041
摘要： Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
摘要翻译：制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。

16. 发明申请

US20120153328A1 LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, AND METHOD OF PACKAGING LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置，发光装置包装，制造发光装置的方法和包装发光装置的方法
公开(公告)号：US20120153328A1
公开(公告)日：2012-06-21
申请号：US13297809
申请日：2011-11-16
申请人： Tsuyoshi TSUTSUI
发明人： Tsuyoshi TSUTSUI
IPC分类号： H01L33/48 , H01L33/50
CPC分类号： H01L33/507 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/8592 , H01L2933/0041 , H01L2924/00014
摘要： A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.
摘要翻译：包括荧光体层的发光器件，使用发光器件的发光器件封装，制造发光器件的方法以及封装发光器件的方法。发光装置包括：具有顶表面，底表面和侧表面的透光基底; 形成在所述透光性基板的上表面的发光单元; 以及覆盖透光性基板的所有侧面的荧光体层。根据本发明，可以减少从衬底的侧表面发射的光的色度劣化。

17. 发明申请

US20080290359A1 Light emitting device and manufacturing method of the same 审中-公开
标题翻译：发光器件及其制造方法相同
公开(公告)号：US20080290359A1
公开(公告)日：2008-11-27
申请号：US12081888
申请日：2008-04-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

18. 发明授权

US06610589B2 Semiconductor light emitting device and method of manufacturing the same 有权
公开(公告)号：US06610589B2
公开(公告)日：2003-08-26
申请号：US10163428
申请日：2002-06-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L2128
CPC分类号： H01L33/38 , H01L24/45 , H01L2224/05073 , H01L2224/05166 , H01L2224/05644 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/49107 , H01L2924/01012 , H01L2924/01013 , H01L2924/01028 , H01L2924/01079 , H01L2924/12036 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusion metal layer on the surface of the semiconductor lamination. Also, an n-side electrode is formed on the n-type layer exposed by etching off a part of the semiconductor lamination. The n-side electrode is formed of an ohmic contact electrode and a bonding electrode. The bonding electrode is formed in such a manner as to cover the surface and the sides of the ohmic contact electrode. As a result, a semiconductor light emitting device made of a gallium nitride based compound semiconductor is produced having an electrode structure of a superior ohmic contact characteristic and a superior wire bonding characteristic.

19. 发明授权

US06395572B1 Method of producing semiconductor light-emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06395572B1
公开(公告)日：2002-05-28
申请号：US09518504
申请日：2000-03-03
申请人： Tsuyoshi Tsutsui , Kotaro Ogura
发明人： Tsuyoshi Tsutsui , Kotaro Ogura
IPC分类号： H01L2100
CPC分类号： H01L33/22
摘要： Semiconductor light-emitting elements are produced by providing a wafer substrate of GaP, epitaxially growing on this substrate a semiconductor layered structure including an n-type layer and a p-type layer of GaP for providing a light-emitting layer, forming top electrodes on the semiconductor layered structure each over a portion of the area corresponding to one of the chips into which the substrate is to be later divided, forming a bottom electrode on the bottom surface of the substrate, dicing the wafer substrate into the individual chips, and thereafter carrying out a surface-roughening process on externally exposed portions of the semiconductor structure by means of hydrochloric acid. Each of the top electrodes is of a three-layer structure with a contact metal layer which may be of an alloy of Au and makes an ohmic contact with the GaP of the semiconductor layered structure, a Mo layer on the contact metal layer and an Au layer on the Mo layer.
摘要翻译：半导体发光元件是通过提供GaP晶片衬底，在该衬底上外延生长的半导体层状结构，包括n型层和用于提供发光层的GaP的p型层，形成顶部电极将半导体分层结构分别与对应于要分离基板的芯片之一对应的区域的一部分上，在基板的底面上形成底部电极，将晶片基板切割成各个芯片，之后通过盐酸对半导体结构的外露部分进行表面粗糙化处理。每个顶电极具有三层结构，其接触金属层可以是Au的合金，并与半导体层状结构的GaP，欧姆接触，接触金属层上的Mo层和Au Mo层上。

20. 发明授权

US06248607B1 Method for manufacturing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06248607B1
公开(公告)日：2001-06-19
申请号：US09391624
申请日：1999-09-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L2100
CPC分类号： H01L33/0095 , H01L33/007 , Y10S438/906 , Y10S438/909
摘要： In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.
摘要翻译：在制造半导体发光器件的方法中，当将至少包含n型层和p型层并形成发光层的氮化镓基化合物半导体层层叠在基板上并进行热处理时为了激活层叠半导体层的p型层，在包括氧的气氛下进行热处理。通过这种布置，可以在短时间内执行用于激活包含氮化镓基化合物半导体的层叠半导体层的p型层的热处理，而且可靠地进行激活。

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