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11. 发明申请

US20110169035A1 SMALL SIZE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：小尺寸发光装置及其制造方法
公开(公告)号：US20110169035A1
公开(公告)日：2011-07-14
申请号：US13070014
申请日：2011-03-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/44 , H01L33/62 , H01L33/64
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

12. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

13. 发明授权

US06265324B1 Method of manufacturing semiconductor device and mask for forming thin film pattern 失效
标题翻译：制造半导体器件的方法和用于形成薄膜图案的掩模
公开(公告)号：US06265324B1
公开(公告)日：2001-07-24
申请号：US09315234
申请日：1999-05-20
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yasuo Miyano , Koutarou Ogura
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yasuo Miyano , Koutarou Ogura
IPC分类号： H01L2131
CPC分类号： C23C14/042
摘要： A mask 11 for vapor deposition is made of glass. Through-holes 15 are formed in the glass mask 11 so that they make a prescribed pattern on the surface of a semiconductor substrate 4. The peripheral wall of the through-hole is tapered so that the opening face 15b from which evaporated atoms are introduced is larger than the opening face 15a facing the deposition surface of the semiconductor substrate. The evaporated metal atoms having flied aslant toward the opening face 15b from which the evaporated atoms are introduced can pass through the through-hole 14 so that the evaporated metal atoms are deposited on the deposition surface of the semiconductor substrate. A desired thin film pattern inclusive of an electrode pattern can be easily formed on the surface of a semiconductor substrate, thereby improving the production yield of a semiconductor device.
摘要翻译：用于气相沉积的掩模11由玻璃制成。在玻璃掩模11中形成通孔15，使得它们在半导体衬底4的表面上形成规定的图案。通孔的周壁是锥形的，使得引入蒸发原子的开口面15b为大于面向半导体衬底的沉积表面的开口面15a。向被引入蒸发原子的开口面15b倾斜倾斜的蒸发金属原子可以通过通孔14，使得蒸发的金属原子沉积在半导体衬底的沉积表面上。可以容易地在半导体衬底的表面上形成包括电极图案的期望的薄膜图案，从而提高半导体器件的制造成品率。

14. 发明授权

US6107644A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
申请人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , H01L33/38 , H01L27/15
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/32
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译：半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。提供与暴露的第二导电类型电连接的第二电极。第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。

15. 发明授权

US06197609B1 Method for manufacturing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06197609B1
公开(公告)日：2001-03-06
申请号：US09391625
申请日：1999-09-07
申请人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
发明人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
IPC分类号： H01L2100
CPC分类号： H01L33/0095
摘要： Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrode are then respectively formed on the p-type layer on the surface of the laminated semiconductor layers and the exposed n-type layer, respectively in an electrically connected manner, followed by dicing of the substrate from the exposed n-type layer to the substrate at portions at which breaking of the substrate is performed. Then a protection film is provided on the entire surface of the laminated semiconductor layers as to expose the p-side and n-side electrodes, and breaking of the substrate is performed at dicing portions into individual chips. Consequently, semiconductor light emitting devices can be obtained by breaking the wafer into individual chips without etching the protection film and without damaging the protection film at the time of breaking. Also, the light emitting devices can be improved.
摘要翻译：形成发光层并且包括n型层和p型层的半导体层形成在衬底上，然后通过去除一部分层叠半导体层而露出n型层。 p侧电极和n侧电极分别以电连接的方式分别形成在层叠半导体层的表面上的p型层和暴露的n型层上，接着从基板在进行基板断裂的部分，将裸露的n型层涂覆在基板上。然后在层叠半导体层的整个表面上设置保护膜，以露出p侧和n侧电极，并且在切割部分将基板的断裂进行到单独的芯片。因此，半导体发光器件可以通过将晶片分解为单独的芯片而不蚀刻保护膜并且在破坏时不损坏保护膜来获得。而且，可以改善发光器件。

16. 发明授权

US06194241B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译：半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。

17. 发明授权

US06191437B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06191437B1
公开(公告)日：2001-02-20
申请号：US09381285
申请日：1999-09-21
申请人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007
摘要： An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (10). In the case where a buffer layer (2) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (1) and the light emitting layer forming portion (10), the buffer layer (2) and/or at least one layer of the light emitting layer forming portion (10) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (10) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.
摘要翻译：在基板（1）上设置由氮化镓类化合物半导体构成的n型层（3）和p型层（5），使得形成光的发光层形成部（10）提供发光层。含有氧的氮化镓系化合物半导体层用于至少一层发光层形成部（10）。在基板（1）和发光层形成部分（10）之间设置由氮化镓基化合物半导体或氮化铝制成的缓冲层（2）的情况下，缓冲层（2）和/或在发光层形成部（10）的至少一层可以含有氧。通过这样的结构，可以减少发光层形成部分（10）的半导体层的晶体缺陷，并且可以高度提高亮度。因此，可以获得具有高亮度的蓝色型半导体发光器件。

18. 发明授权

US6060730A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6060730A
公开(公告)日：2000-05-09
申请号：US110940
申请日：1998-07-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40 , H01L29/78
CPC分类号： H01L33/32 , H01L33/025
摘要： There is provided a semiconductor laminated portion in which gallium nitride based compound semiconductor layers including an n-type layer and a p-type layer are laminated for forming an emitting layer on a substrate. Then, an n-side electrode and a p-side electrode are provided so as to be electrically connected to the n-type layer and p-type layer of the semiconductor laminated portion, respectively. The n-type layer includes at least an n-type first layer and an n.sup.+ -type second layer so that the carrier concentration of the portion to be provided with the n-side electrode is higher than the carrier concentration of the portion in contact with the emitting layer. Consequently, the ohmic contact characteristics of the n-type layer and n-side electrode are improved to reduce a forward voltage, resulting in a semiconductor light emitting device with high light emitting efficiency.
摘要翻译：提供了一种半导体层叠部分，其中层叠有包括n型层和p型层的氮化镓基化合物半导体层，以在衬底上形成发光层。然后，分别设置n侧电极和p侧电极，以与半导体层叠部分的n型层和p型层电连接。 n型层至少包括n型第一层和n +型第二层，使得设置有n侧电极的部分的载流子浓度高于与接触的部分的载流子浓度发光层。因此，提高了n型层和n侧电极的欧姆接触特性以减小正向电压，从而导致发光效率高的半导体发光器件。

19. 发明授权

US08796050B2 Method and apparatus for manufacturing white light-emitting device 有权
标题翻译：白光发光装置的制造方法及装置
公开(公告)号：US08796050B2
公开(公告)日：2014-08-05
申请号：US13338678
申请日：2011-12-28
申请人： Cheol-jun Yoo , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
发明人： Cheol-jun Yoo , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
IPC分类号： H01L33/50 , H01L33/00 , H01L21/67 , H01L21/683
CPC分类号： B05C1/027 , H01L21/6715 , H01L21/6838 , H01L33/0079 , H01L33/50 , H01L2933/0041
摘要： Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
摘要翻译：制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。

20. 发明申请

US20120153328A1 LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, AND METHOD OF PACKAGING LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置，发光装置包装，制造发光装置的方法和包装发光装置的方法
公开(公告)号：US20120153328A1
公开(公告)日：2012-06-21
申请号：US13297809
申请日：2011-11-16
申请人： Tsuyoshi TSUTSUI
发明人： Tsuyoshi TSUTSUI
IPC分类号： H01L33/48 , H01L33/50
CPC分类号： H01L33/507 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/8592 , H01L2933/0041 , H01L2924/00014
摘要： A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.
摘要翻译：包括荧光体层的发光器件，使用发光器件的发光器件封装，制造发光器件的方法以及封装发光器件的方法。发光装置包括：具有顶表面，底表面和侧表面的透光基底; 形成在所述透光性基板的上表面的发光单元; 以及覆盖透光性基板的所有侧面的荧光体层。根据本发明，可以减少从衬底的侧表面发射的光的色度劣化。

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