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11. 发明申请

US20060202607A1 Thin film electron emitter, manufacturing method thereof, and image display device using the thin film electron emitter 审中-公开
标题翻译：薄膜电子发射体及其制造方法以及使用薄膜电子发射体的图像显示装置
公开(公告)号：US20060202607A1
公开(公告)日：2006-09-14
申请号：US11367690
申请日：2006-03-06
申请人： Yasushi Sano , Takuo Tamura , Hiroshi Kikuchi , Kazushi Miyata , Kazuhiro Fukuchi
发明人： Yasushi Sano , Takuo Tamura , Hiroshi Kikuchi , Kazushi Miyata , Kazuhiro Fukuchi
IPC分类号： H01J63/04
CPC分类号： H01J9/022 , B82Y10/00 , H01J1/312 , H01J31/127
摘要： In an image display device having, in each pixel, an electron emitter containing a first electrode, an insulating layer, and a second electrode arranged in this order, the insulating layer is formed by anodic oxidation using the first electrode and has defects, if any, in a number of 3×1019 or less cubic centimeter. The electron emitter has a longer life, and the image display device using the electron emitter has improved reliability and image quality.
摘要翻译：在图像显示装置中，在每个像素中具有依次排列的包含第一电极，绝缘层和第二电极的电子发射体，通过使用第一电极的阳极氧化形成绝缘层，如果有的话在3×10 9个或更少立方厘米的数量内。电子发射体具有更长的寿命，并且使用电子发射器的图像显示装置具有改进的可靠性和图像质量。

12. 发明申请

US20050142701A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050142701A1
公开(公告)日：2005-06-30
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜。测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测定下一非晶硅膜的平均膜厚。基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。能量密度的值被反馈到激光束照射系统。如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。结果，可以在大面积上形成多晶硅TFT。

13. 发明授权

US06861299B2 Process for manufacturing thin film transistor on unannealed glass substrate 有权
标题翻译：在非退火玻璃基板上制造薄膜晶体管的工艺
公开(公告)号：US06861299B2
公开(公告)日：2005-03-01
申请号：US10404060
申请日：2003-04-02
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

14. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

15. 发明授权

US07352890B2 Method for analyzing circuit pattern defects and a system thereof 失效
标题翻译：电路图形缺陷分析方法及其系统
公开(公告)号：US07352890B2
公开(公告)日：2008-04-01
申请号：US11356210
申请日：2006-02-17
申请人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
发明人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148 , H01L22/20
摘要： A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.
摘要翻译：一种用于分析电子电路图案缺陷的系统，包括：将结构缺陷的位置信息与电气故障的位置信息进行比较，并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像，该分类规则通过参考缺陷图像，缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作，其中对于被检查的每个当前对象，使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

16. 发明申请

US20070210697A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20070210697A1
公开(公告)日：2007-09-13
申请号：US11679968
申请日：2007-02-28
申请人： Takuo Tamura , Yasushi Sano , Kazushi Miyata
发明人： Takuo Tamura , Yasushi Sano , Kazushi Miyata
IPC分类号： H01J1/62
CPC分类号： H01J29/30 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127
摘要： Disclosed herein is an image display device including: plural pixels arranged two-dimensionally; and a thin film electron emitter that has a lower electrode formed of one of data lines, an electron acceleration layer formed by an anodic oxidation of a surface of the lower electrode, and an upper electrode stacked on the electron acceleration layer to emit electrons thereby provided in each of the plural pixels, in which a ratio of hydrate-alumina to the total of the hydrate-alumina and anhydrous-alumina contained in the electron acceleration layer (the anodic oxide film) arranged in each of the pixels in regulated in a range from 0.25 to 0.42.
摘要翻译：本文公开了一种图像显示装置，包括：二维排列的多个像素; 以及薄膜电子发射体，其具有由数据线之一形成的下电极，通过下电极的表面的阳极氧化形成的电子加速层和堆叠在电子加速层上以发射电子的上电极，由此提供在多个像素中的每一个中，其中水合物 - 氧化铝与排列在每个像素中的电子加速层（阳极氧化膜）中包含的水合物 - 氧化铝和无水 - 氧化铝的总量的比例调节在一个范围内从0.25到0.42。

17. 发明授权

US07258586B2 Method for manufacturing an organic electroluminescence display 有权
标题翻译：有机电致发光显示器的制造方法
公开(公告)号：US07258586B2
公开(公告)日：2007-08-21
申请号：US10878550
申请日：2004-06-29
申请人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
发明人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
IPC分类号： H01J9/00
CPC分类号： H01L51/56 , H01L2251/568
摘要： When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.
摘要翻译：当在具有第一电极和第二电极之间的有机EL层的有机EL显示器中没有点亮任何像素时，观察到像素的有机层。如果像素的有机层含有异物，则将第二电极分离成与异物接触的区域和不与接触区域和异物接触的区域。因此，尽可能地减少不亮的显示区域，使得可以制造显示性能优异的有机EL显示器。

18. 发明申请

US20060205103A1 Methods for repairing and manufacturing display device 审中-公开
标题翻译：显示装置的修理和制造方法
公开(公告)号：US20060205103A1
公开(公告)日：2006-09-14
申请号：US11213748
申请日：2005-08-30
申请人： Takuo Tamura , Hiroshi Kikuchi , Yasushi Sano , Masakazu Sagawa , Yoshiro Mikami
发明人： Takuo Tamura , Hiroshi Kikuchi , Yasushi Sano , Masakazu Sagawa , Yoshiro Mikami
IPC分类号： H01L21/00 , H01L21/82
CPC分类号： H01L27/1214 , B82Y10/00 , H01J9/022 , H01J9/50 , H01J2201/3125 , Y02W30/828
摘要： For inhibiting generation of pixels that could not be displayed in a line in a display screen of an electron emission display comprising the pixels each provided with an electron source in which a first electrode at a signal line side and a second electrode at a scanning line side are joined through an isolating layer (electron acceleration layer), the present invention cuts off continuity between the first electrode and the second electrode which are short-circuited caused by a defect, so that the electron source with the defect is isolated from other electron sources. In the electron source with a defect, for example, a portion of the second electrode surrounding the above-mentioned defect thereof is excised by laser.
摘要翻译：为了抑制在电子发射显示器的显示屏幕中不能显示的像素的产生，该电子发射显示器包括每个设有电子源的像素，其中信号线侧的第一电极和扫描线侧的第二电极通过隔离层（电子加速层）接合，本发明切断由缺陷引起的短路的第一电极和第二电极之间的连续性，使得具有缺陷的电子源与其他电子源隔离。在具有缺陷的电子源中，例如，通过激光切除围绕上述缺陷的第二电极的一部分。

19. 发明申请

US20060140472A1 Method for analyzing circuit pattern defects and a system thereof 失效
标题翻译：电路图形缺陷分析方法及其系统
公开(公告)号：US20060140472A1
公开(公告)日：2006-06-29
申请号：US11356210
申请日：2006-02-17
申请人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
发明人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148 , H01L22/20
摘要： A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.
摘要翻译：一种用于分析电子电路图案缺陷的系统，包括：将结构缺陷的位置信息与电气故障的位置信息进行比较，并提取在结构缺陷和电气故障之间具有共同位置信息的证实缺陷; 基于预先存储的分类规则将提取的确证缺陷的图像分类为关键缺陷图像和非关键缺陷图像，该分类规则通过参考缺陷图像，缺陷位置信息和执行电子化的结果来定义关键和非关键缺陷测试; 通过校正显示在屏幕上的分类缺陷图像的分类来修改预先存储的分类规则; 并对每个后续对象重复操作，其中对于被检查的每个当前对象，使用关于先前对象的经修改的预先存储的分类规则作为关于本对象的操作的预先存储的分类规则。

20. 发明申请

US20080129187A1 IMAGE DISPLAY DEVICE 失效
标题翻译：图像显示设备
公开(公告)号：US20080129187A1
公开(公告)日：2008-06-05
申请号：US11943690
申请日：2007-11-21
申请人： Takuo Tamura , Masakazu Sagawa , Hiroshi Kikuchi
发明人： Takuo Tamura , Masakazu Sagawa , Hiroshi Kikuchi
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0484
摘要： An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.
摘要翻译：一种图像显示装置，其中每个像素具有由下电极（其是信号线），电子加速层（通过阳极氧化所述信号线的表面形成）构成的薄膜电子源，以及上电极（其覆盖所述电子加速层并释放电子），其中构成所述电子加速层的阳极氧化膜含有水合氧化铝组分和无水氧化铝组分，使得它们在靠近上电极的一侧的比例大于侧面密封到下电极。该结构防止所述电子加速层使所述薄膜电子源的二极管特性劣化，从而提高所述图像显示装置的可靠性。

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