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11. 发明申请

US20080144291A1 METHODS AND DEVICES FOR COOLING PRINTED CIRCUIT BOARDS 审中-公开
标题翻译：用于冷却印刷电路板的方法和装置
公开(公告)号：US20080144291A1
公开(公告)日：2008-06-19
申请号：US11610313
申请日：2006-12-13
申请人： Shao Chung Hu , Ming Chi Kan , Chion-Min Sung
发明人： Shao Chung Hu , Ming Chi Kan , Chion-Min Sung
IPC分类号： H05K7/20
CPC分类号： H05K1/053 , H05K1/0306 , H05K1/0373 , H05K1/056 , H05K3/44 , H05K2201/0323 , H05K2203/0315
摘要： Methods and devices for cooling printed circuit boards having at least one heat source are disclosed and described. Such a device may include a dielectric layer disposed onto a surface of a substrate. The dielectric layer may include a plurality of carbonaceous particles disposed in a dielectric material. In one aspect, the carbonaceous particles may be diamond particles. Furthermore, a circuit including a heat source may be disposed onto a surface of the dielectric layer opposite to the substrate such that the circuit is thermally coupled to the dielectric layer. Additionally, the dielectric layer may be configured to accelerate heat generated by the heat source away from the heat source.
摘要翻译：公开并描述了用于冷却具有至少一个热源的印刷电路板的方法和装置。这种器件可以包括设置在衬底的表面上的电介质层。电介质层可以包括设置在电介质材料中的多个碳质颗粒。一方面，碳质颗粒可以是金刚石颗粒。此外，包括热源的电路可以设置在与衬底相对的电介质层的表面上，使得电路热耦合到电介质层。另外，电介质层可以被配置为加热由热源产生的热量远离热源。

12. 发明授权

US07232752B2 Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation 有权
标题翻译：在化学机械抛光操作后从硅晶片去除污染物的方法
公开(公告)号：US07232752B2
公开(公告)日：2007-06-19
申请号：US10603924
申请日：2003-06-24
申请人： Shao-Chung Hu , Teng-Chun Tsai , Chia-Lin Hsu , Yung-Tsung Wei
发明人： Shao-Chung Hu , Teng-Chun Tsai , Chia-Lin Hsu , Yung-Tsung Wei
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/3212 , H01L21/02074
摘要： A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.
摘要翻译：化学机械抛光（CMP）后从硅晶片去除污染物的方法。在铜化学机械抛光和随后的屏障化学 - 机械抛光操作之后，施加去离子水中的臭氧水溶液以清洁硅晶片，从而去除晶片上的污染物。或者，在铜和阻挡CMP之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。或者，在铜CMP和阻挡CMP两者之后进行臭氧/去离子水缓冲抛光工艺，然后使用化学溶液或去离子水清洁晶片。

13. 发明申请

US20180044185A1 GRAPHENE AND HEXAGONAL BORON NITRIDE PLANES AND ASSOCIATED METHODS 审中-公开
公开(公告)号：US20180044185A1
公开(公告)日：2018-02-15
申请号：US15444226
申请日：2017-02-27
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： H01L21/02 , B82Y40/00 , C04B35/653 , C04B35/622 , C23C14/06 , B82Y30/00 , C04B35/583
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

14. 发明授权

US08453916B2 Thermal conduction device and method for fabricating the same 有权
标题翻译：导热装置及其制造方法
公开(公告)号：US08453916B2
公开(公告)日：2013-06-04
申请号：US13004437
申请日：2011-01-11
申请人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
发明人： Shao-Chung Hu , Hsing Hung , Hung-Cheng Lin , I-Chiao Lin , Chien-Min Sung
IPC分类号： B23K31/02 , B22F7/00
CPC分类号： C09K5/00 , B32B5/16 , B32B15/20 , B32B2264/10 , B32B2307/302 , H01L23/3732 , H01L23/3733 , H01L23/3736 , H01L2924/0002 , Y10T428/25 , H01L2924/00
摘要： A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.
摘要翻译：公开了一种导热装置及其制造方法。首先，根据预定图案在平面上布置多个金刚石颗粒以形成金刚石颗粒单层。接下来，在金属材料上施加成形工艺，使得金属材料形成包裹金刚石颗粒的金属基体，以形成包含嵌入在金属基体中的金刚石颗粒单层的复合体。接下来，堆叠多个复合体并进行加热处理以将金属基体彼此接合以形成导热装置。该装置的特征在于在平面上布置金刚石颗粒以形成二维单层结构，并通过组装二维单层结构制造以形成三维多层结构。通过控制金刚石颗粒的布置，导热装置可以具有优异的导热性能。

15. 发明申请

US20110011628A1 HIGHLY THERMAL CONDUCTIVE CIRCUIT BOARD 审中-公开
标题翻译：高导热电路板
公开(公告)号：US20110011628A1
公开(公告)日：2011-01-20
申请号：US12643045
申请日：2009-12-21
申请人： Ming-Chi Kan , Shao-Chung Hu , Chien-Min Sung
发明人： Ming-Chi Kan , Shao-Chung Hu , Chien-Min Sung
IPC分类号： H05K7/20
CPC分类号： H05K1/05 , H05K2201/0323 , H05K2201/0347 , H05K2201/0355
摘要： A highly thermal conductive circuit board includes a composite substrate, and a metal layer, an insulating layer, and a conductor layer sequentially disposed on the composite substrate. When at least one electronic element is electrically disposed on the conductor layer of the highly thermal conductive circuit board, heat produced by the electronic element in operation is rapidly dissipated through characteristics such as a high thermal conductivity and a low thermal expansion coefficient of the highly thermal conductive circuit board.
摘要翻译：高导热电路板包括复合衬底和顺序地设置在复合衬底上的金属层，绝缘层和导体层。当至少一个电子元件电气地布置在高导热电路板的导体层上时，由电子元件在运行中产生的热量通过诸如高热导率和低热膨胀系数的特性快速消散导电电路板。

16. 发明申请

US20100218801A1 Graphene and Hexagonal Boron Nitride Planes and Associated Methods 审中-公开
标题翻译：石墨烯和六角氮化硼飞机及相关方法
公开(公告)号：US20100218801A1
公开(公告)日：2010-09-02
申请号：US12713004
申请日：2010-02-25
申请人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
发明人： Chien-Min Sung , Shao Chung Hu , I-Chiao Lin , Chien-Pei Yu
IPC分类号： C23C14/06 , C23C14/24 , B32B15/04 , H01L31/042
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/20 , C04B35/583 , C04B35/62218 , C04B35/653 , C04B2235/3203 , C23C14/0605 , H01L21/0242 , H01L21/02425 , H01L21/02491 , H01L21/02527 , H01L21/0254 , H01L21/02573 , H01L21/02612 , H01L21/02625 , Y10S977/734 , Y10S977/842 , Y10S977/932 , Y10T428/24612 , Y10T428/31678
摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.
摘要翻译：公开了主要由sp2键合的原子制成的石墨烯层及相关方法。一方面，例如，形成石墨膜的方法可以包括在真空下将固体基质加热到小于固体基质的熔点的溶解温度，将碳原子从石墨源溶解到加热的固体基质中并且以足以从固体基底的至少一个表面上溶解的碳原子形成石墨膜的速率冷却加热的固体基质。石墨膜形成为基本上没有晶格缺陷。

17. 发明授权

US07727798B1 Method for production of diamond-like carbon film having semiconducting property 有权
标题翻译：具有半导体性质的类金刚石碳膜的制造方法
公开(公告)号：US07727798B1
公开(公告)日：2010-06-01
申请号：US12360333
申请日：2009-01-27
申请人： Sea-Fue Wang , Jui-Chen Pu , Chia-Lun Lin , Fu-Ting Hsu , Kai-Hung Hsu , Yu-Chuan Wu , Shea-Jue Wang , Chien-Min Sung , Shao-Chung Hu , Ming-Chi Kan
发明人： Sea-Fue Wang , Jui-Chen Pu , Chia-Lun Lin , Fu-Ting Hsu , Kai-Hung Hsu , Yu-Chuan Wu , Shea-Jue Wang , Chien-Min Sung , Shao-Chung Hu , Ming-Chi Kan
IPC分类号： H01L21/00
CPC分类号： H01L21/0405 , C23C14/0605 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.
摘要翻译：具有半导体性质的类金刚石碳膜的制造方法包括通过射频磁控溅射法在硅衬底上制备掺硼的类金刚石碳（B-DLC）薄膜，其中通过将硼使用片剂作为石墨靶中的掺杂剂源。在形成含硼金刚石碳膜之后，将薄膜在500℃的温度下退火并在该温度下保持10分钟，并确定其载流子浓度和电阻率。因此证明所述硼掺杂的类金刚石碳膜的极性是p型半导体特性。载体浓度可高达1.3×1018 cm-3，其电阻率约为0.6＆OHgr; -cm; 所以。根据本发明的具有优异的半导体性能和高温稳定性的硼掺杂的半导体类金刚石碳膜最好适用于太阳能电池或电子通信以及电极元件和设备。

18. 发明申请

US20050250312A1 Structure and process of metal interconnects 有权
公开(公告)号：US20050250312A1
公开(公告)日：2005-11-10
申请号：US11155729
申请日：2005-06-16
申请人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
发明人： Shao-Chung Hu , Yu-Ru Yang , Chien-Chung Huang
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76886 , H01L21/76805 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76867
摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.

19. 发明授权

US06706140B2 Control system for in-situ feeding back a polish profile 失效
标题翻译：用于原位反馈抛光轮廓的控制系统
公开(公告)号：US06706140B2
公开(公告)日：2004-03-16
申请号：US09682486
申请日：2001-09-07
申请人： Chia-Lin Hsu , Shao-Chung Hu , Teng-Chun Tsai
发明人： Chia-Lin Hsu , Shao-Chung Hu , Teng-Chun Tsai
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B49/10 , B24B57/02 , H01L21/30625
摘要： A chemical mechanical polishing (CMP) machine has a polish platen, having at least a first ring-shaped region and a second ring-shaped region. A control system for in-situ feeding back a polish profile of the CMP machine has at least a first sensor and a second sensor, respectively installed in the first and the second ring-shaped regions, and a control unit electrically connected to the first sensor and the second sensor for comparing the polish rates of portions of the wafer over the first and the second ring-shaped regions, respectively, according to signals of the first and the second sensors, and adjusting amounts of a slurry supplied by first and second slurry pump valves, corresponding to the first and second ring-shaped regions, according to a predetermined process, or adjusting forces loaded to the first and second regions of the wafer according to the predetermined process.
摘要翻译：化学机械抛光（CMP）机器具有抛光台板，具有至少第一环形区域和第二环形区域。用于原位反馈CMP机的抛光轮廓的控制系统具有分别安装在第一和第二环形区域中的至少第一传感器和第二传感器，以及电连接到第一传感器的控制单元以及第二传感器，用于根据第一和第二传感器的信号分别比较第一和第二环形区域上的部分晶片的抛光速率，以及调节由第一和第二浆料供应的浆料的量根据预定过程对应于第一和第二环形区域的泵阀，或根据预定过程加载到晶片的第一和第二区域的调节力。

20. 发明授权

US08778784B2 Stress regulated semiconductor devices and associated methods 失效
标题翻译：应力调节半导体器件及相关方法
公开(公告)号：US08778784B2
公开(公告)日：2014-07-15
申请号：US13284900
申请日：2011-10-29
申请人： Chien-Min Sung , Ming Chi Kan , Shao Chung Hu
发明人： Chien-Min Sung , Ming Chi Kan , Shao Chung Hu
IPC分类号： H01L21/20
CPC分类号： H01L23/3733 , H01L23/3732 , H01L33/641 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.
摘要翻译：提供了受压调节的半导体器件和相关方法。在一个方面，例如，应力调节半导体器件可以包括半导体层，包括形成在半导体层上的碳层的应力调节界面层和耦合到与半导体层相对的碳层的散热器。应力调节界面层是可操作的，以将半导体层和散热器之间的热膨胀系数差减小到或等于约10ppm /℃。

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