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    • 14. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060086959A1
    • 2006-04-27
    • US11257053
    • 2005-10-25
    • Seiichi Iwasa
    • Seiichi Iwasa
    • H01L21/8242H01L29/94
    • H01L29/945H01L27/1087
    • There is provided a semiconductor device including a semiconductor substrate which has an element region in which a diffusion layer for a source or a drain is formed, and a trench for a capacitor, a capacitor dielectric film which is formed on inner surfaces of the trench, a storage electrode which is formed in the trench provide with the capacitor dielectric film, and which has an upper surface lying at a level higher than an upper surface of the diffusion layer, and a conductive connecting part which connects the storage electrode to the diffusion layer and contacts the upper surfaces of the storage electrode and diffusion layer.
    • 提供了一种半导体器件,其包括具有其中形成有源极或漏极的扩散层的元件区域和用于电容器的沟槽的半导体衬底,形成在沟槽的内表面上的电容器电介质膜, 形成在沟槽中的存储电极提供电容器电介质膜,并且具有位于比扩散层的上表面高的高度的上表面;以及导电连接部分,其将存储电极连接到扩散层 并与存储电极和扩散层的上表面接触。
    • 15. 发明授权
    • Method and device for driving plasma display panel
    • 用于驱动等离子体显示面板的方法和装置
    • US07023405B2
    • 2006-04-04
    • US10459610
    • 2003-06-12
    • Kenji AwamotoSeiichi Iwasa
    • Kenji AwamotoSeiichi Iwasa
    • G09G3/28
    • G09G3/296G09G3/2942G09G2310/066G09G2330/02G09G2330/021G09G2360/16
    • A plasma display device having display electrode pairs and providing improved luminance and light emission efficiency of display discharges with reduced variations of the luminance and light emission efficiency thereof resulting from variations of a display load. A discharge is generated by applying an offset drive voltage that is higher than a sustain voltage applied to the display electrode pair, and applying the sustain voltage for a constant period after dropping the applied voltage from an offset drive voltage to the sustain voltage after generating the display discharge. The drive output state is set to a low impedance state at least during a time period from the start of applying the offset drive voltage until the applied voltage drops to the sustain voltage.
    • 一种具有显示电极对的等离子体显示装置,并且由于显示负载的变化而导致的亮度和发光效率的变化减小,提供了显示放电的改善的亮度和发光效率。 通过施加高于施加到显示电极对的维持电压的偏移驱动电压,并且在施加了从偏移驱动电压施加的电压到维持电压之后将恒定周期施加的维持电压产生放电 显示放电。 至少在从施加偏移驱动电压开始到施加的电压下降到维持电压的时间段期间,将驱动输出状态设置为低阻抗状态。
    • 19. 发明授权
    • Magnetic bubble memory chip
    • 磁性气泡存储芯片
    • US4568618A
    • 1986-02-04
    • US659879
    • 1984-10-15
    • Hidema UchishibaSeiichi IwasaKazuyuki Yamaguchi
    • Hidema UchishibaSeiichi IwasaKazuyuki Yamaguchi
    • G11C11/14G11C19/08H01F10/24G11B5/64
    • H01F10/24G11C19/085Y10S428/90Y10S428/91
    • In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.
    • 为了使磁性石榴石晶体膜(54)的剥离场的温度依赖性与用于在气泡存储芯片(2)中施加偏置磁场的永磁体(56)的剩余磁化的温度依赖性相匹配 )之后,在其上形成导电体之后,必须使磁性石榴石晶体膜(51)的塌陷场的温度系数为0.01〜0.04%/℃,绝对值大于温度 上述剩余磁化强度的系数(56)。 本发明通过增加构成磁性石榴石晶体的单位晶格的八面体位置中的Lu离子对Fe离子的取代度来实现。 因此,确保了与现有的工作温度范围相当的两倍宽的工作温度范围。