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1. 再颁专利

USRE38278E1 Surface acoustic wave device and production process thereof 有权
标题翻译：表面声波装置及其制作方法
公开(公告)号：USRE38278E1
公开(公告)日：2003-10-21
申请号：US09286328
申请日：1999-04-05
申请人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takamatsu , Hajime Taniguchi
发明人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takamatsu , Hajime Taniguchi
IPC分类号： H01L4108
CPC分类号： H03H3/08 , H03H9/14538 , Y10T29/42
摘要： This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials in kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.

2. 发明授权

US4568618A Magnetic bubble memory chip 失效
标题翻译：磁性气泡存储芯片
公开(公告)号：US4568618A
公开(公告)日：1986-02-04
申请号：US659879
申请日：1984-10-15
申请人： Hidema Uchishiba , Seiichi Iwasa , Kazuyuki Yamaguchi
发明人： Hidema Uchishiba , Seiichi Iwasa , Kazuyuki Yamaguchi
IPC分类号： G11C11/14 , G11C19/08 , H01F10/24 , G11B5/64
CPC分类号： H01F10/24 , G11C19/085 , Y10S428/90 , Y10S428/91
摘要： In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.
摘要翻译：为了使磁性石榴石晶体膜（54）的剥离场的温度依赖性与用于在气泡存储芯片（2）中施加偏置磁场的永磁体（56）的剩余磁化的温度依赖性相匹配）之后，在其上形成导电体之后，必须使磁性石榴石晶体膜（51）的塌陷场的温度系数为0.01〜0.04％/℃，绝对值大于温度上述剩余磁化强度的系数（56）。本发明通过增加构成磁性石榴石晶体的单位晶格的八面体位置中的Lu离子对Fe离子的取代度来实现。因此，确保了与现有的工作温度范围相当的两倍宽的工作温度范围。

3. 发明授权

US5955933A Saw resonator with improved connections 失效
标题翻译：具有改进连接的锯片谐振器
公开(公告)号：US5955933A
公开(公告)日：1999-09-21
申请号：US640948
申请日：1996-05-15
申请人： Tokihiro Nishihara , Yoshio Satoh , Hidema Uchishiba , Takashi Matsuda , Osamu Ikata
发明人： Tokihiro Nishihara , Yoshio Satoh , Hidema Uchishiba , Takashi Matsuda , Osamu Ikata
IPC分类号： H03H9/02 , H03H9/145 , H03H9/64 , H03H9/25 , H03H9/52
CPC分类号： H03H9/6483 , H03H9/02944 , H03H9/145 , H03H9/64 , H03H9/02984
摘要： In a surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators R.sub.s1 & R.sub.p1, or on a lead conductor (130-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1. It is preferable that the width along the longitudinal direction of the comb teeth electrodes is larger than a width of the comb teeth electrode.
摘要翻译： PCT No.PCT / JP95 / 02293 Sec。 371日期：1996年5月15日 102（e）日期1996年5月15日PCT提交1995年11月10日PCT公布。公开号WO96 / 15587 日期：1996年5月23日在由具有共振频率或反共振频率的谐振器的梯形构成的表面声波滤波器中，从输入端流入到并联臂的第一级的并联臂的谐振器的输入电流大到由于薄膜布线的电阻而产生的热量使其寿命恶化。作为这个问题的一个措施，连接在连接电极（130,131）上的点上的接合线（30,31）用于连接形成谐振器Rs1和Rp1的多个梳齿电极111的端部，或引线导体 130-1）从连接电极纵向延伸，分配在多个梳齿电极组的中心线（C1）的两侧。此外，接合线也可以基本上连接在中心线C1上。接合线优选相对于中心线C1大致对称。梳齿电极的沿长度方向的宽度优选大于梳齿电极的宽度。

4. 发明授权

US5909156A Surface acoustic wave device with multilayer electrodes and method for manufacturing the same 失效
标题翻译：具有多层电极的表面声波装置及其制造方法
公开(公告)号：US5909156A
公开(公告)日：1999-06-01
申请号：US762031
申请日：1996-12-11
申请人： Tokihiro Nishihara , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh
发明人： Tokihiro Nishihara , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh
IPC分类号： C23C14/14 , H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/14541 , H03H9/02897 , H03H9/02929 , Y10T29/42
摘要： A surface acoustic wave device includes an electrode formed by a first film and a second film on a substrate, the first film including an Al film or a film formed by adding at least one other element to Al, and the second film including a metal whose coefficient of diffusion into Al is greater than a self diffusion coefficient of Al. The present invention contributes to improvement of the high-power durability of the electrodes.
摘要翻译：表面声波装置包括由基板上的第一膜和第二膜形成的电极，所述第一膜包括Al膜或通过向Al中添加至少一种其它元素形成的膜，所述第二膜包括金属， Al扩散系数大于Al的自扩散系数。本发明有助于提高电极的高功率耐久性。

5. 发明授权

US5796205A Surface acoustic wave device and method of producing the same 失效
标题翻译：声表面波装置及其制造方法
公开(公告)号：US5796205A
公开(公告)日：1998-08-18
申请号：US615798
申请日：1996-03-14
申请人： Tokihiro Nishihara , Takashi Matsuda , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh , Kazunari Komenou
发明人： Tokihiro Nishihara , Takashi Matsuda , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh , Kazunari Komenou
IPC分类号： H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H03H9/64 , H01L41/08
CPC分类号： H03H3/08 , H03H9/02559 , H03H9/02574 , H03H9/1071 , H03H9/6483 , H03H9/02984 , Y10T29/42
摘要： A SAW (Surface Acoustic Wave) device includes a piezoelectric member, a heat-treated ion implantation layer formed in a surface portion of the piezoelectric member, and an electrode of a comb type resonator with reflectors provided on said heat-treated ion implantation layer. The present invention also provides a method of producing such a SAW device.
摘要翻译： SAW（表面声波）器件包括压电元件，形成在压电元件的表面部分中的热处理离子注入层和设置在所述热处理离子注入层上的具有反射器的梳状谐振器的电极。本发明还提供一种制造这种SAW器件的方法。

6. 发明授权

US5774962A Process for producing a surface acoustic wave device 失效
标题翻译：制造表面声波装置的方法
公开(公告)号：US5774962A
公开(公告)日：1998-07-07
申请号：US676504
申请日：1996-07-08
申请人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takanatsu , Hajime Taniguchi
发明人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takanatsu , Hajime Taniguchi
IPC分类号： H01L21/60 , H03H3/08 , H03H9/145 , H04R17/00
CPC分类号： H03H3/08 , H03H9/14538 , Y10T29/42
摘要： This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
摘要翻译：本发明涉及声表面波装置及其制造方法。通过在压电基板上交替层叠至少含有铜的铝合金膜和铜膜而形成电极。尽管多层电极材料的粒度保持较小，但是膜的空隙的发生被阻止，并且弹性表面波器件的寿命延长。

7. 发明授权

US5773917A Surface acoustic wave device and production process thereof 失效
标题翻译：表面声波装置及其制作方法
公开(公告)号：US5773917A
公开(公告)日：1998-06-30
申请号：US863026
申请日：1997-05-23
申请人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takanatsu , Hajime Taniguchi
发明人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takanatsu , Hajime Taniguchi
IPC分类号： H01L21/60 , H03H3/08 , H03H9/145 , H01L41/08
CPC分类号： H03H3/08 , H03H9/14538 , Y10T29/42
摘要： This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
摘要翻译：本发明涉及声表面波装置及其制造方法。通过在压电基板上交替层叠至少含有铜的铝合金膜和铜膜而形成电极。尽管多层电极材料的粒度保持较小，但是膜的空隙的发生被阻止，并且弹性表面波器件的寿命延长。

8. 再颁专利

USRE38002E1 Process for providing a surface acoustic wave device 有权
标题翻译：用于提供声表面波装置的方法
公开(公告)号：USRE38002E1
公开(公告)日：2003-02-25
申请号：US09482546
申请日：2000-01-14
申请人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takamatsu , Hajime Taniguchi
发明人： Yoshio Satoh , Osamu Ikata , Hidema Uchishiba , Takashi Matsuda , Tokihiro Nishihara , Mitsuo Takamatsu , Hajime Taniguchi
IPC分类号： H04R1700
CPC分类号： H03H3/08 , H03H9/14538 , Y10T29/42
摘要： This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
摘要翻译：本发明涉及声表面波装置及其制造方法。通过在压电基板上交替层叠至少含有铜的铝合金膜和铜膜而形成电极。尽管多层电极材料的粒度保持较小，但是膜的空隙的发生被阻止，并且弹性表面波器件的寿命延长。

9. 发明授权

US06242991B1 Surface acoustic wave filter having a continuous electrode for connection of multiple bond wires 失效
标题翻译：表面声波滤波器，具有用于连接多个接合线的连续电极
公开(公告)号：US06242991B1
公开(公告)日：2001-06-05
申请号：US09244993
申请日：1999-02-04
申请人： Tokihiro Nishihara , Yoshio Satoh , Hidema Uchishiba , Takashi Matsuda , Osamu Ikata
发明人： Tokihiro Nishihara , Yoshio Satoh , Hidema Uchishiba , Takashi Matsuda , Osamu Ikata
IPC分类号： H03H964
CPC分类号： H03H9/6483 , H03H9/02944 , H03H9/02984 , H03H9/145 , H03H9/64
摘要： In A surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators Rs1 & Rp1, or on a lead conductor (103-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1. It is preferable that the width along the longitudinal direction of the comb teeth electrodes is lager than a width of the comb teeth electrode.
摘要翻译：在由具有共振频率或反共振频率的谐振器的梯形构成的表面声波滤波器中，从输入端流入第一级并联臂的谐振器的输入电流大到导致其寿命恶化由薄膜布线的电阻产生的热量。作为这个问题的一个措施，连接在连接电极（130,131）上的点上的接合线（30,31）用于连接形成谐振器Rs1和Rp1的多个梳齿电极111的端部，或引线导体 103-1）从连接电极纵向延伸，分配在多个梳齿电极组的中心线（C1）的两侧。此外，接合线也可以基本上连接在中心线C1上。接合线优选相对于中心线C1大致对称。优选梳齿电极沿着长度方向的宽度比梳齿电极的宽度大。

10. 发明授权

US6131257A Method of making a surface acoustic wave device 失效
标题翻译：制造表面声波装置的方法
公开(公告)号：US6131257A
公开(公告)日：2000-10-17
申请号：US4273
申请日：1998-01-08
申请人： Tokihiro Nishihara , Takashi Matsuda , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh , Kazunari Komenou
发明人： Tokihiro Nishihara , Takashi Matsuda , Hidema Uchishiba , Osamu Ikata , Yoshio Satoh , Kazunari Komenou
IPC分类号： H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H03H9/64 , H01L41/22
CPC分类号： H03H3/08 , H03H9/02559 , H03H9/02574 , H03H9/1071 , H03H9/6483 , H03H9/02984 , Y10T29/42
摘要： A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.
摘要翻译：一种制造SAW（表面声波）器件的方法，包括以下步骤：在SAW器件的压电元件的整个表面上注入离子，从而在其中形成离子注入层; 进行压电部件的热处理，使得在压电部件的整个表面上形成热处理的离子注入层; 以及在热处理的离子注入层上提供梳型谐振器的电极。

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