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11. 发明申请

US20060078029A1 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser 有权
标题翻译：在表面发射半导体激光器和表面发射半导体激光器中制造波导结构的方法
公开(公告)号：US20060078029A1
公开(公告)日：2006-04-13
申请号：US10544333
申请日：2003-11-19
申请人： Markus-Christian Amann
发明人： Markus-Christian Amann
IPC分类号： H01S3/03
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/18369 , H01S5/3095 , H01S5/34306 , H01S2301/166 , H01S2301/176
摘要： Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties.
摘要翻译：公开了用于制造具有可调谐波导的表面发射半导体激光器的方法。该激光器包括一个包含pn跃迁的有源区，被第一n掺杂半导体层和至少一个p掺杂半导体层围绕。除了在有源区的p侧上的隧道结之外，除了形成孔的区域之外，隧道结与第二n掺杂半导体层相接合。在为隧道结提供的层和至少一个p掺杂半导体层之间提供n掺杂层。隧道结可以布置在电场强度的垂直强度分布的最大或最小值中。这使得能够以高产率制造表面发射激光二极管，同时稳定侧向单模操作，高性能和波导性能。

12. 发明授权

US5325379A Tunable laser diode 失效
标题翻译：可调谐激光二极管
公开(公告)号：US5325379A
公开(公告)日：1994-06-28
申请号：US993838
申请日：1992-12-21
申请人： Markus-Christian Amann
发明人： Markus-Christian Amann
IPC分类号： H01S5/06 , H01S5/062 , H01S5/10 , H01S5/227 , H01S3/10
CPC分类号： H01S5/1032 , H01S5/06206 , H01S5/06203 , H01S5/1035 , H01S5/2275
摘要： Tunable laser diode, whereby two waveguide lasers (5, 7) are arranged transversely relative to one another. A separate current injection into each of the two waveguide layers (5, 7) is possible due to an intermediate layer (6) situated between these waveguide layers (5, 7). An absorber layer (4) periodically interrupted in a longitudinal direction is arranged transversely relative to the layer plane, resulting in forward coupling with an imaginary degree of coupling.
摘要翻译：可调谐激光二极管，由此两个波导激光器（5,7）相对于彼此横向布置。由于位于这些波导层（5,7）之间的中间层（6），可以将两个波导层（5,7）中的每一个单独的电流注入。在纵向方向上周期性地中断的吸收层（4）相对于层平面横向设置，导致与虚拟偶联方向的正向耦合。

13. 发明申请

US20130336351A1 Polarization-Stable Surface-Emitting Laser Diode 有权
标题翻译：极化稳定的表面发射激光二极管
公开(公告)号：US20130336351A1
公开(公告)日：2013-12-19
申请号：US13988323
申请日：2011-10-28
申请人： Markus-Christian Amann , Markus Ortsiefer , Jürgen Rosskopf
发明人： Markus-Christian Amann , Markus Ortsiefer , Jürgen Rosskopf
IPC分类号： H01S5/183
CPC分类号： H01S5/18355 , H01S5/0282 , H01S5/18361 , H01S5/18377
摘要： The present invention relates to a surface-emitting laser diode with an active amplifying region (2) which is bounded by two laser mirrors (1, 3), while one or more polarization-selective layers (4) are provided for stabilising the polarization in a region that is located on that side of at least one of the laser mirrors (1, 3) that is opposite the active amplifying region (2), these layers (4) extending parallel to the respective mirror (1; 3) and having a polarization-dependent refractive index and/or absorption.
摘要翻译：本发明涉及具有由两个激光镜（1,3）限定的有源放大区域（2）的表面发射激光二极管，同时提供一个或多个偏振选择层（4）以稳定极化位于与有源放大区域（2）相对的至少一个激光镜（1,3）的该侧的区域，这些层（4）平行于相应的反射镜（1; 3）延伸并具有偏振相关折射率和/或吸收。

14. 发明授权

US08331412B2 Vertical-cavity surface-emitting semiconductor laser diode and method for the manufacture thereof 有权
标题翻译：垂直腔表面发射半导体激光二极管及其制造方法
公开(公告)号：US08331412B2
公开(公告)日：2012-12-11
申请号：US12623247
申请日：2009-11-20
申请人： Markus-Christian Amann , Markus Ortsiefer
发明人： Markus-Christian Amann , Markus Ortsiefer
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/105 , H01S5/18355 , H01S5/18369 , H01S5/3095
摘要： The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength λ, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors.
摘要翻译：本发明包括垂直腔表面发射半导体激光二极管，其具有具有第一分布布拉格反射器的谐振器，具有p-n结并嵌入半导体层序列的有源区和第二分布布拉格反射器。半导体激光二极管具有发射波长λ，其中周期性结构布置在谐振器内，作为由半导体材料和介电材料制成的光栅，其主平面基本垂直于半导体发射方向激光二极管。周期性结构与嵌入有源区的至少一个半导体层和两个分布式布拉格反射器中的至少一个直接接触。

15. 发明授权

US4963507A Method and manufacturing a laser diode with buried active layer 失效
标题翻译：方法和制造具有掩埋有源层的激光二极管
公开(公告)号：US4963507A
公开(公告)日：1990-10-16
申请号：US186799
申请日：1988-04-27
申请人： Markus-Christian Amann , Wolfgang Thulke , Gerhard Baumann
发明人： Markus-Christian Amann , Wolfgang Thulke , Gerhard Baumann
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275 , Y10S148/099 , Y10S148/101
摘要： In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.
摘要翻译：在具有条形有源层的激光二极管的制造中，在施加横向层，特别是用于横向电流传导的阻挡pn结的应用中出现问题，因为这些层在有源层上方是不期望的。通过在横向层的生长之前施加将溶解在横向层的材料的超冷却熔体中的保护性覆盖层，避免了横向层的生长，特别是阻挡pn结，使活性条上方的生长被避免，因为覆盖层在侧向层的外延应用中溶解在熔体中。

16. 发明授权

US08971375B2 Polarization-stable surface-emitting laser diode 有权
标题翻译：极化稳定的表面发射激光二极管
公开(公告)号：US08971375B2
公开(公告)日：2015-03-03
申请号：US13988323
申请日：2011-10-28
申请人： Markus-Christian Amann , Markus Ortsiefer , Jürgen Rosskopf
发明人： Markus-Christian Amann , Markus Ortsiefer , Jürgen Rosskopf
IPC分类号： H01S3/08 , H01S5/183 , H01S5/028
CPC分类号： H01S5/18355 , H01S5/0282 , H01S5/18361 , H01S5/18377
摘要： The present invention relates to a surface-emitting laser diode with an active amplifying region (2) which is bounded by two laser mirrors (1, 3), while one or more polarization-selective layers (4) are provided for stabilizing the polarization in a region that is located on that side of at least one of the laser mirrors (1, 3) that is opposite the active amplifying region (2), these layers (4) extending parallel to the respective mirror (1; 3) and having a polarization-dependent refractive index and/or absorption.
摘要翻译：本发明涉及具有由两个激光镜（1,3）限定的有源放大区域（2）的表面发射激光二极管，同时提供一个或多个偏振选择层（4）以稳定极化位于与有源放大区域（2）相对的至少一个激光镜（1,3）的该侧的区域，这些层（4）平行于相应的反射镜（1; 3）延伸并具有偏振相关折射率和/或吸收。

17. 发明授权

US5008893A Tunable semiconductor laser 失效
标题翻译：可调谐半导体激光器
公开(公告)号：US5008893A
公开(公告)日：1991-04-16
申请号：US480825
申请日：1990-02-15
申请人： Markus-Christian Amann , Gerhard Baumann , Jochen Heinen , Wolfgang Thulke
发明人： Markus-Christian Amann , Gerhard Baumann , Jochen Heinen , Wolfgang Thulke
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/12
CPC分类号： H01S5/06206 , H01S5/12
摘要： A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.
摘要翻译：一种可调谐半导体激光器，其形成在基板2上，该基板2在一个表面上具有第一触点14，并且在相对表面上具有第三触点16，以便通过阻挡层提供侧向限制于激光活性条纹的工作电流并且在脊波导11,12,13上包括第二接触15，以便将电荷载流子注入安装在有源层6附近的调谐层9中，并通过高度掺杂的中心层10与有源层分离，以便以允许调谐激光。

18. 发明授权

US4792200A Array of coupled optical waveguides 失效
标题翻译：耦合光波导阵列
公开(公告)号：US4792200A
公开(公告)日：1988-12-20
申请号：US32599
申请日：1987-04-01
申请人： Markus-Christian Amann , Bernhard Stegmueller , Franz Kappeler
发明人： Markus-Christian Amann , Bernhard Stegmueller , Franz Kappeler
IPC分类号： G02B6/125 , H01S5/40 , G02B6/12
CPC分类号： H01S5/4031 , G02B6/125
摘要： An array of coupled waveguides in the form of MCRW laser diodes and/or passive waveguides are coupled to one another by optical waves of the TM-mode occurring in semiconductor regions between the waveguides that have a reduced thickness d, the neighboring waveguides being provided at a spacing a.
摘要翻译： MCRW激光二极管和/或无源波导形式的耦合波导阵列通过在具有减小的厚度d的波导之间的半导体区域中发生的TM模的光波彼此耦合，相邻的波导设置在一个间距a。

19. 发明授权

US4656636A Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate 失效
标题翻译：用于在基板上制造具有耦合条形波导的集成DFB激光器的方法
公开(公告)号：US4656636A
公开(公告)日：1987-04-07
申请号：US810611
申请日：1985-12-23
申请人： Markus-Christian Amann , Hans F. Mahlein , Bernhard Stegmueller , Wolfgang Thulke , Gerhard Winzer , Ulrich Wolff
发明人： Markus-Christian Amann , Hans F. Mahlein , Bernhard Stegmueller , Wolfgang Thulke , Gerhard Winzer , Ulrich Wolff
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/223 , H01S5/323 , H01S3/19 , B44C1/22 , H01L21/00 , H01L21/306
CPC分类号： H01S5/12 , H01S5/026 , H01S5/1032 , H01S5/2231 , H01S5/32391
摘要： A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.
摘要翻译：一种在基板上集成DFB激光器和无源带状波导的方法。在第一外延步骤中产生层堆叠，层堆叠在最上层具有激光有源层和表面宽光栅，并且在区域上仅侵蚀堆叠，但仅下降到激光活性层，而不是通过蚀刻来形成将激光区域与无源带状波导区域分离的步骤。通过使用蚀刻停止层，可以进行自适应的蚀刻，并且激光有源层和无源带状波导区域之间的耦合不是通过端部耦合而是通过表面耦合而发生的。完全制造结构仅需要两个外延步骤，并且可以在相同的单一方法步骤中制造激光和波导的定义所需的条。

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