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11. 发明授权

US08361549B2 Power loading substrates to reduce particle contamination 有权
标题翻译：功率负载基板以减少颗粒污染
公开(公告)号：US08361549B2
公开(公告)日：2013-01-29
申请号：US13315366
申请日：2011-12-09
申请人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
发明人： Dong-Kil Yim , John M. White , Soo Young Choi , Han Byoul Kim , Jin Man Ha , Beom Soo Park
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/4401 , C23C14/02 , C23C14/564 , C23C16/0209 , H01J2237/2001
摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.
摘要翻译：公开了一种防止处理室内的颗粒污染的方法。预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。增加衬底温度的一种方法是等离子体加载衬底。等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。提高衬底温度的另一种方法是加载衬底的高压。高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

12. 发明申请

US20120103989A1 METHOD AND APPARATUS FOR SEALING AN OPENING OF A PROCESSING CHAMBER 有权
标题翻译：用于密封加工室的开口的方法和装置
公开(公告)号：US20120103989A1
公开(公告)日：2012-05-03
申请号：US13349307
申请日：2012-01-12
申请人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
发明人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
IPC分类号： B65D43/26
CPC分类号： C23C16/54 , C23C16/45517
摘要： A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译：提供一种用于密封处理室的开口的方法和装置。在一个实施例中，本发明通常提供集成在处理室的壁内的封闭构件，用于密封腔室壁内的开口。在另一个实施例中，本发明提供了一种封闭构件，其构造成将处理室的壁中的开口与室的内部密封。

13. 发明授权

US08147614B2 Multi-gas flow diffuser 失效
标题翻译：多气流扩散器
公开(公告)号：US08147614B2
公开(公告)日：2012-04-03
申请号：US12794756
申请日：2010-06-06
申请人： John M. White , Carl Sorensen , Robin Tiner , Beom Soo Park , Soo Young Choi
发明人： John M. White , Carl Sorensen , Robin Tiner , Beom Soo Park , Soo Young Choi
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45591 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.
摘要翻译：本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。阻挡板联接到盖子并且与其分隔起来。气体分配板联接到盖子上。气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

14. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

15. 发明授权

US07992956B2 Systems and methods for calibrating inkjet print head nozzles using light transmittance measured through deposited ink 失效
标题翻译：使用通过沉积墨水测量的透光度来校准喷墨打印头喷嘴的系统和方法
公开(公告)号：US07992956B2
公开(公告)日：2011-08-09
申请号：US11758631
申请日：2007-06-05
申请人： Quanyuan Shang , John M. White
发明人： Quanyuan Shang , John M. White
IPC分类号： B41J29/393
CPC分类号： B41J29/393
摘要： The present invention provides inkjet print nozzle calibration systems and methods for calibrating an inkjet print nozzle. The systems may include an inkjet print nozzle adapted to dispense ink onto a substrate in response to a firing pulse voltage, a light source adapted to illuminate the dispensed ink, an imaging system adapted to measure a transmittance of light through the dispensed ink, and a controller adapted to controllably adjust the inkjet print nozzle based on the measured light transmittance. The methods may include dispensing ink onto a surface with an inkjet print nozzle set at a firing pulse voltage, measuring a light transmittance characteristic of the dispensed ink, determining a volume of ink dispensed based on the transmittance characteristic, and adjusting a fire pulse voltage of the inkjet print nozzle based on a difference between the determined volume of ink dispensed and an expected volume level of ink dispensed.
摘要翻译：本发明提供喷墨打印喷嘴校准系统和用于校准喷墨打印喷嘴的方法。系统可以包括喷墨打印喷嘴，其适于响应于点火脉冲电压将油墨分配到衬底上，适合于照亮所分配的油墨的光源，适于测量通过分配的油墨的光的透射率的成像系统，以及控制器，其适于基于测量的透光率可控地调节喷墨打印喷嘴。所述方法可以包括将墨水分配到具有设置在点火脉冲电压的喷墨打印喷嘴的表面上，测量所分配的墨水的透光率特性，基于透射特性确定分配的墨水体积，以及调节喷射脉冲电压喷墨打印喷嘴基于确定的墨水分配量和分配的墨水的预期体积水平之间的差异。

16. 发明授权

US07902991B2 Frequency monitoring to detect plasma process abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US07902991B2
公开(公告)日：2011-03-08
申请号：US11682290
申请日：2007-03-05
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

17. 发明申请

US20110041873A1 Method of cleaning a CVD processing chamber 审中-公开
标题翻译：清洗CVD处理室的方法
公开(公告)号：US20110041873A1
公开(公告)日：2011-02-24
申请号：US12925767
申请日：2010-10-28
申请人： Gaku Furuta , Tae Kyung Won , John M. White
发明人： Gaku Furuta , Tae Kyung Won , John M. White
IPC分类号： B08B7/00
CPC分类号： C23C16/0209 , C23C16/5096
摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.
摘要翻译：当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定系列底物。将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

18. 发明授权

US07879210B2 Partially suspended rolling magnetron 有权
标题翻译：部分悬浮磁控管
公开(公告)号：US07879210B2
公开(公告)日：2011-02-01
申请号：US11347667
申请日：2006-02-03
申请人： Makoto Inagawa , Akihiro Hosokawa , John M. White
发明人： Makoto Inagawa , Akihiro Hosokawa , John M. White
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , H01J37/3435 , H01J37/3455
摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.
摘要翻译：一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在靶上的多个位置处从其下方部分地支撑，在其上滑动或滚动。在一个实施例中，轭板是连续且均匀的。在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。磁轭分开足够小的间隙，使得两个磁轭磁耦合。每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。或者，窄槽形成为单一轭。

19. 发明授权

US07784164B2 Electronic device manufacturing chamber method 有权
标题翻译：电子装置制造室法
公开(公告)号：US07784164B2
公开(公告)日：2010-08-31
申请号：US11214475
申请日：2005-08-29
申请人： John M. White , Donald Verplancken , Shinichi Kurita
发明人： John M. White , Donald Verplancken , Shinichi Kurita
IPC分类号： B23P11/00
CPC分类号： H01L21/67236 , H01L21/67196 , Y10S414/135 , Y10S414/139 , Y10T29/49826 , Y10T29/53
摘要： A non-polygon shaped, multi-piece chamber is provided. A non-polygon shaped, multi-piece chamber may include (1) a central piece having a first side and a second side, (2) a first side piece adapted to couple with the first side of the central piece, and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece, and the second side piece form a cylindrical overall shape when coupled together. Numerous other aspects are provided.
摘要翻译：提供非多边形形状的多片式室。非多边形多片式室可以包括（1）具有第一侧和第二侧的中心件，（2）适于与中心件的第一侧连接的第一侧件，以及（3）适于与中心件的第二侧联接的第二侧件。当连接在一起时，中心件，第一侧件和第二侧件形成圆柱形的整体形状。提供了许多其他方面。

20. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

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