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    • 12. 发明授权
    • Film forming apparatus
    • 成膜装置
    • US06319371B2
    • 2001-11-20
    • US09339849
    • 1999-06-25
    • Hiroichi IshikawaMasayasu Kakinuma
    • Hiroichi IshikawaMasayasu Kakinuma
    • C23C1434
    • C23C14/562C23C14/10
    • A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.
    • 成膜装置包括溅射室,设置在其中央部分的用于冷却与其表面接触的辊膜的冷却鼓,辊室,SiOx膜形成室和设置在鼓周边的监视室 设置在SiOx膜形成室上的溅射阴极,以及设置在成膜室中的湿气泵,例如低温面板,用于有效地排出成膜室内的水分分压保持滚动的水分, 通过InSitu透射光监视器监测形成后的SiOx膜的光吸收,通过SiO x膜的光的透射率判断SiO x的值x,以通过MFC控制氧气流量,使得值x 达到目标值,从而能够形成在基板上具有足够的粘附性和良好的渗透性的粘合层。
    • 14. 发明申请
    • VIBRATING DEVICE, JET FLOW GENERATING APPARATUS, AND ELECTRONIC APPARATUS
    • 振动装置,喷射流产生装置和电子装置
    • US20060245614A1
    • 2006-11-02
    • US11380219
    • 2006-04-26
    • Hiroichi Ishikawa
    • Hiroichi Ishikawa
    • H04R1/00
    • H02K33/18
    • A vibrating device configured to vibrate a gas inside a chassis to discharge the gas in a pulsating flow through an opening formed in the chassis includes a frame, a vibrating plate, a supporting member that is attached to the frame and that is configured to support the vibrating plate in a manner such that the vibrating plate is vibratable, and a driving mechanism that is configured to drive the vibrating plate and that includes a magnetic circuit member attached to the frame and a voice coil body attached to the vibrating plate. The voice coil body is configured to prevent the voice coil body from contacting the magnetic circuit member when the vibrating plate is vibrating and is movable by means of a magnetic field generated by the magnetic circuit member.
    • 一种振动装置,其构造成使底盘内的气体振动,通过形成在所述底架上的开口的脉动流中排出气体,所述振动装置包括框架,振动板,支撑构件,所述支撑构件安装在所述框架上, 振动板可振动板的振动板;以及驱动机构,其构造成驱动振动板,并且包括安装在框架上的磁路部件和安装在振动板上的音圈体。 音圈体被构造成当振动板振动时防止音圈体与磁路部件接触,并且借助于由磁路部件产生的磁场可移动。
    • 15. 发明授权
    • Optical multilayer structure, optical switching device, and image display
    • 光学多层结构,光学开关器件和图像显示
    • US07027208B2
    • 2006-04-11
    • US11135829
    • 2005-05-24
    • Hiroichi Ishikawa
    • Hiroichi Ishikawa
    • G02F1/03G02B6/26
    • G02B6/3524G02B5/284G02B5/285G02B5/286G02B6/3512G02B6/3544G02B6/355G02B6/3572G02B6/3584G02B6/3594G02B26/001
    • An optical multilayer structure has a substrate, a light-absorbing first layer in contact with the substrate, a gap portion having a changeable size capable of causing an optical interference phenomenon, and a second layer. By changing the size of the gap portion, an amount of reflection, transmission, or absorption of incident light can be changed. For example, the substrate is made of carbon (C), the first layer is made of tantalum (Ta), and the second layer is made of silicon nitride (Si3N4). Also in a visible light area, high response is realized. Consequently, the optical multilayer structure can be suitably used for an image display. The optical multilayer structure may be obtained by stacking, on a substrate made of a metal such as chromium (Cr), a first transparent layer made of a material having a high refractive index such as TiO2 (n=2.40), a second transparent layer made of a material having a low refractive index such as MgF2 (n=1.38), a gap portion having a changeable size capable of causing an optical interference phenomenon, and a third transparent layer made of a material having a high refractive index such as TiO2.
    • 光学多层结构具有基板,与基板接触的光吸收第一层,具有能够引起光学干涉现象的可变尺寸的间隙部分和第二层。 通过改变间隙部分的尺寸,可以改变入射光的反射,透射或吸收的量。 例如,基板由碳(C)制成,第一层由钽(Ta)制成,第二层由氮化硅(Si 3 N 4 N 4)制成, SUB>)。 同样在可见光区域,实现了高响应。 因此,光学多层结构可以适用于图像显示。 光学多层结构可以通过在由诸如铬(Cr)的金属制成的衬底上堆叠由具有高折射率的材料(例如TiO 2)(n)形成的第一透明层, = 2.40),由具有低折射率的材料如MgF 2(n = 1.38)制成的第二透明层,具有能够引起光学干涉现象的可变尺寸的间隙部分,以及 由具有高折射率的材料(例如TiO 2)制成的第三透明层。
    • 18. 发明授权
    • Wafer support structure for a wafer backplane with a curved surface
    • 具有弯曲表面的晶片背板的晶片支撑结构
    • US5804042A
    • 1998-09-08
    • US488063
    • 1995-06-07
    • John FerreiraTatsuo OnozakiHiroichi Ishikawa
    • John FerreiraTatsuo OnozakiHiroichi Ishikawa
    • C23C14/50C23C16/458C30B25/12C30B31/14H01L21/687C23C14/34
    • H01L21/68721C23C14/50C23C16/4585C30B25/12C30B31/14H01L21/68728H01L21/6875
    • The wafer support structure is used with a movable backplane having a curved upper surface which is moved between a wafer access position and a wafer process position to clamp a wafer against a clamping structure during processing. A guide ring surrounds the backplane and a floating ring is spring-mounted on the guide ring by flat, elongated lift springs. RF bias springs are positioned on top of the floating ring along with wafer support pins which support a wafer above the curved backplane surface. When the backplane is moved toward the clamping structure to clamp the wafer, the RF bias springs make electrical contact with a portion of the clamping structure, and the clamping structure acts against the floating ring to flex the lift springs and lower the floating ring such that the wafer is transferred to the backplane surface to be clamped against the clamping structure. When the wafer is clamped, the support pins are out of contact with the wafer. The wafer is stably supported by the support pins over the backplane surface during access of the wafer and is securely clamped between the backplane and clamping structure away from the wafer support during processing of the wafer. A filler ring around the backplane reduces formation of a secondary plasma.
    • 晶片支撑结构与具有弯曲上表面的可移动背板一起使用,其可在晶片访问位置和晶片工艺位置之间移动,以在处理期间将晶片夹紧在夹持结构上。 引导环围绕背板,并且浮动环通过平坦的细长提升弹簧弹簧安装在引导环上。 RF偏置弹簧与支撑在弯曲背板表面上方的晶片的晶片支撑销一起位于浮动环的顶部。 当背板朝向夹持结构移动以夹紧晶片时,RF偏置弹簧与夹持结构的一部分电接触,并且夹紧结构抵抗浮环以弹性升降弹簧并降低浮环,使得 将晶片转移到背板表面以夹紧夹紧结构。 当晶片被夹紧时,支撑销与晶片脱离接触。 在晶片访问期间,晶片被支撑销稳定地支撑在背板表面上,并且在晶片的处理期间被牢固地夹紧在背板和夹紧结构之间远离晶片支撑。 背板周围的填充环减少二次等离子体的形成。
    • 19. 发明授权
    • High speed pump for a processing vacuum chamber
    • 用于加工真空室的高速泵
    • US5520002A
    • 1996-05-28
    • US382386
    • 1995-02-01
    • Hiroichi Ishikawa
    • Hiroichi Ishikawa
    • C23C14/56F04B37/08H01J37/18B01D8/00
    • F04B37/08C23C14/564H01J37/18H01J2237/1825Y10S417/901
    • A high speed pumping apparatus for efficiently and rapidly evacuating a processing chamber to a desired vacuum pressure includes a pump chamber for coupling to the processing chamber and a cryogenic element in the pump chamber to absorb gas particles. The cryogenic element is movable within the pump chamber and has a first position inside the pump chamber and removed from the processing chamber. When the cryogenic element is in the first position, a sealing structure seals the aperture between the pump chamber and the processing chamber. The cryogenic element is movable, through the aperture, to a second position at least partially out of the pump chamber and inside the processing chamber. When in the second position inside of a processing chamber, the cryogenic element absorbs gas particles within the processing chamber and evacuates the chamber to a vacuum pressure. Thereby, the cryogenic element may be exposed to the processing chamber to evacuate the processing chamber and may subsequently be withdrawn into the pump chamber and sealed therein to be protected when the processing chamber is opened to atmospheric pressure.
    • 用于有效且快速地将处理室排空到期望的真空压力的高速泵送装置包括用于联接到处理室的泵室和泵室中的低温元件以吸收气体颗粒。 低温元件可以在泵室内移动并且具有在泵室内的第一位置并从处理室移除。 当低温元件处于第一位置时,密封结构密封泵室和处理室之间的孔。 低温元件可以通过孔径至少部分地移动到泵室内部和处理室内部的第二位置。 当在处理室内部的第二位置时,低温元件吸收处理室内的气体颗粒并将室抽空至真空压力。 由此,低温元件可以暴露于处理室以抽空处理室,并且随后可以将处理室打开至大气压力时将其引入泵室并密封在其中以被保护。