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141. 发明申请

US20040229552A1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US20040229552A1
公开(公告)日：2004-11-18
申请号：US10855276
申请日：2004-05-27
申请人： Cabot Microelectronics Corporation
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： B24B001/00
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译：本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

142. 发明授权

US06730245B2 Chemical-mechanical planarization slurries and powders and methods for using same 失效
标题翻译：化学机械平面化浆料和粉末及其使用方法
公开(公告)号：US06730245B2
公开(公告)日：2004-05-04
申请号：US09753026
申请日：2001-01-02
申请人： Mark J. Hampden-Smith , Toivo T. Kodas , James Caruso , Daniel J. Skamser , Quint H. Powell
发明人： Mark J. Hampden-Smith , Toivo T. Kodas , James Caruso , Daniel J. Skamser , Quint H. Powell
IPC分类号： B29B910
CPC分类号： H01G4/0085 , B01J2/003 , B01J2/006 , B01J2/02 , B01J2/04 , B01J2219/00155 , B01J2219/00159 , B01J2219/00162 , B01J2219/00166 , B01J2219/00171 , B01J2219/00186 , B24B37/044 , B82Y30/00 , C01B13/185 , C01B17/20 , C01F17/0043 , C01G15/006 , C01G23/003 , C01G23/006 , C01G25/00 , C01P2002/60 , C01P2002/70 , C01P2004/03 , C01P2004/32 , C01P2004/34 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/80 , C01P2006/10 , C01P2006/60 , C01P2006/80 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01J29/20 , H01L21/3212 , H01L23/49883 , H01L2924/0002 , H01L2924/00
摘要： Chemical-mechanical planarization slurries and methods for using the slurries wherein the slurry includes abrasive particles. The abrasive particles have a small particle size, narrow size distribution and a spherical morphology and the particles are substantially unagglomerated.
摘要翻译：化学机械平面化浆料和使用浆料的方法，其中浆料包括磨料颗粒。研磨颗粒具有小的粒度，窄的分布尺寸和球形的形态，并且颗粒基本上是未聚集的。

143. 发明申请

US20040033690A1 Method for polishing a substrate surface 有权
标题翻译：抛光基材表面的方法
公开(公告)号：US20040033690A1
公开(公告)日：2004-02-19
申请号：US10300481
申请日：2002-11-20
发明人： Leo J. Schowalter , Javier Martinez Lopez , Juan Carlos Rojo , Kenneth Morgan
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/044 , B24B49/006 , H01L21/02052
摘要： According to one aspect of the invention, an improved process for preparing a surface of substrate is provided wherein the surface of the substrate is prepared for a chemical mechanical polishing (CMP) process, the CMP process is performed on the surface of the substrate, and the surface of the substrate is finished to clear the substrate surface of any active ingredients from the CMP process. Also, an improved substrate produced by the method is provided. According to one aspect of the invention, particular polishing materials and procedures may be used that allow for increased quality of AlN substrate surfaces.
摘要翻译：根据本发明的一个方面，提供了一种用于制备衬底表面的改进方法，其中衬底的表面准备用于化学机械抛光（CMP）工艺，在衬底的表面上进行CMP工艺，以及完成基材的表面以从CMP工艺中清除任何活性成分的基材表面。此外，提供了通过该方法制备的改进的基板。根据本发明的一个方面，可以使用允许增加AlN衬底表面质量的特定抛光材料和程序。

144. 发明授权

US06692546B2 Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权
标题翻译：金属及相关材料的化学机械抛光组合物及其使用方法
公开(公告)号：US06692546B2
公开(公告)日：2004-02-17
申请号：US09932415
申请日：2001-08-17
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09G102
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
摘要翻译：一种化学机械抛光浆料组合物和使用该浆料组合物抛光铜，阻挡材料和电介质材料的方法，其包括第一和第二步浆料。第一步浆料对铜的去除率高，阻隔材料的去除率低。第二步浆料对阻隔材料的去除率高，铜和介电材料的去除率低。第一浆液至少包含有机聚合物研磨剂。

145. 发明授权

US06688969B2 Method for planarizing a dielectric layer of a flash memory device 有权
标题翻译：平面化闪存器件的电介质层的方法
公开(公告)号：US06688969B2
公开(公告)日：2004-02-10
申请号：US10165655
申请日：2002-06-07
申请人： Chi-Tung Huang
发明人： Chi-Tung Huang
IPC分类号： B24B100
CPC分类号： H01L27/115 , B24B37/044 , B24B37/245 , B24B37/26 , C09G1/04 , H01L21/31053 , H01L27/1122 , H01L27/11521
摘要： A method for planarizing the dielectric layer of a flash memory device, wherein the method is applied on substrate of a flash memory device having a plurality of gate structures formed thereon and a protective layer is formed on the gate structures. A dielectric layer is formed on the substrate, filling the space between the gate structures and covering the protective layer. Using the protective layer as a polishing endpoint layer, a fixed base and a polishing slurry that does not contain metal ions are used to chemical mechanically polish and to planarize the dielectric layer. The fixed base includes a base and evenly distributed polishing abrasives fixed onto the base.
摘要翻译：一种用于对闪速存储器件的介电层进行平坦化的方法，其中将该方法应用于其上形成有多个栅极结构的闪存器件的衬底上，并且在栅极结构上形成保护层。在基板上形成电介质层，填充栅极结构之间的空间并覆盖保护层。使用保护层作为抛光终点层，使用不含金属离子的固定基底和抛光浆料进行化学机械抛光和平坦化介电层。固定底座包括固定在基座上的底座和均匀分布的抛光磨料。

146. 发明申请

US20030216045A1 Hydrogen bubble reduction on the cathode using double-cell designs 失效
标题翻译：使用双电池设计在阴极上进行氢气还原
公开(公告)号：US20030216045A1
公开(公告)日：2003-11-20
申请号：US10455861
申请日：2003-06-06
申请人： Applied Materials, Inc.
发明人： Yan Wang , Feng Q. Liu , Alain Duboust , Siew S. Neo , Liang-Yuh Chen , Yongqi Hu
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： B23H3/08 , B23H5/08 , B24B37/0056 , B24B37/044 , B24B37/046 , C09G1/04 , C25F3/02 , H01L21/32125 , H01L21/32134
摘要： An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing system that reduces the number of defects found on the substrate surface after polishing. An exemplary electrochemical apparatus includes a physical barrier that prevents any trapped gas or gas generated during processing from residing in areas that can cause defects on the substrate. The process can be aided by the addition of various chemical components to the electrolyte that tend to reduce the gas generation at the cathode surface during the ECMP anodic dissolution process.
摘要翻译：使用通过膜分离成两部分的室来平坦化基板的表面的装置和方法，以及两个单独的电解质。本发明的实施方案通常提供一种电化学机械抛光系统，其减少抛光后在基底表面上发现的缺陷数量。示例性电化学装置包括物理屏障，其防止在处理期间产生的任何捕获的气体或气体驻留在可能导致基板上的缺陷的区域中。该方法可以通过在电解质中添加各种化学成分来辅助，该电解质在ECMP阳极溶解过程期间倾向于减少阴极表面的气体产生。

147. 发明申请

US20030130114A1 Method for the deposition of an electrocatalyst layer 有权
标题翻译：沉积电催化剂层的方法
公开(公告)号：US20030130114A1
公开(公告)日：2003-07-10
申请号：US10212991
申请日：2002-08-05
发明人： Mark J. Hampden-Smith , Toivo T. Kodas , Plamen Atanassov , Klaus Kunze , Paul Napolitano , Rimple Bhatia , David E. Dericotte , Paolina Atanassova
IPC分类号： B01J021/18 , H01M006/00
CPC分类号： B01J21/18 , B01J2/003 , B01J2/006 , B01J2/02 , B01J2/04 , B01J2/16 , B01J2/18 , B01J13/02 , B01J19/10 , B01J19/2405 , B01J23/00 , B01J23/34 , B01J23/40 , B01J31/06 , B01J35/002 , B01J35/006 , B01J35/023 , B01J35/08 , B01J35/1014 , B01J35/1061 , B01J37/0054 , B01J37/343 , B01J2219/00112 , B01J2219/00155 , B01J2219/00159 , B01J2219/00162 , B01J2219/00166 , B01J2219/00171 , B01J2219/00186 , B22F1/0018 , B22F1/02 , B22F1/025 , B22F9/02 , B22F9/026 , B22F9/24 , B22F2998/00 , B22F2999/00 , B24B37/044 , B82Y30/00 , C01B13/18 , C01B13/185 , C01B17/20 , C01G15/006 , C01G23/003 , C01G23/006 , C01G25/00 , C01P2002/60 , C01P2002/70 , C01P2004/03 , C01P2004/32 , C01P2004/34 , C01P2004/50 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/80 , C01P2006/10 , C01P2006/22 , C01P2006/60 , C01P2006/80 , C09G1/02 , C09K3/1436 , C09K3/1463 , C09K11/025 , C09K11/0805 , C09K11/0877 , C09K11/562 , C09K11/565 , C09K11/567 , C09K11/595 , C09K11/625 , C09K11/671 , C09K11/7718 , C09K11/7731 , C09K11/7734 , C09K11/7746 , C09K11/7771 , C09K11/7774 , C09K11/7789 , C09K11/7797 , C22C1/1026 , C22C29/00 , C22C32/0084 , C22C32/0089 , H01G4/0085 , H01J29/20 , H01L21/3212 , H01L23/49883 , H01L2924/0002 , H01M4/8605 , H01M4/8807 , H01M4/8825 , H01M4/8867 , H01M4/90 , H01M4/9016 , H01M4/9083 , H01M4/92 , H01M4/923 , H01M4/926 , H01M8/1004 , H01M12/08 , H01M2008/1095 , H05K1/095 , Y02E60/128 , Y10T29/49108 , Y10T428/12181 , Y10T428/12535 , Y10T428/12625 , Y10T428/12875 , Y10T428/12896 , B22F1/0048 , B22F1/0014 , B22F3/008 , B22F2202/11 , B22F2202/01 , H01L2924/00
摘要： Electrocatalyst powders and methods for producing electrocatalyst powders, such as carbon composite electrocatalyst powders. The powders have a well-controlled microstructure and morphology. The method includes forming the particles from an aerosol of precursors by heating the aerosol to a relatively low temperature, such as not greater than about 400null C.
摘要翻译：电催化剂粉末和电催化剂粉末的制备方法，如碳复合电催化剂粉末。粉末具有良好控制的微观结构和形态。该方法包括通过将气溶胶加热至相对较低的温度（例如不超过约400℃）从前体气溶胶形成颗粒。

148. 发明申请

US20030116446A1 Electrolyte composition and treatment for electrolytic chemical mechanical polishing 失效
标题翻译：电解质组成和电解化学机械抛光处理
公开(公告)号：US20030116446A1
公开(公告)日：2003-06-26
申请号：US10032275
申请日：2001-12-21
发明人： Alain Duboust , Lizhong Sun , Feng Q. Liu , Yuchun Wang , Yan Wang , Siew Neo , Liang-Yuh Chen
IPC分类号： C25F003/00
CPC分类号： B23H3/08 , B23H5/08 , B24B37/0056 , B24B37/044 , B24B37/046 , C09G1/04 , C25F3/02 , H01L21/32125 , H01L21/32134
摘要： An electrolyte composition and method for planarizing a surface of a wafer using the electrolyte composition is provided. In one aspect, the electrolyte composition includes ammonium dihydrogen phosphate, diammonium hydrogen phosphate, or a mixture thereof. The composition has a pH between about 3 and about 10 which is environmentally friendly and does not present hazardous operation concerns. The composition may further comprise one or more additives selected from a group consisting of benzotriazole, ammonium citrate, ethlylenediamine, tetraethylenepentamine, triethylenetetramine, diethylenetriamine, amino acids, ammonium oxalate, ammonia, ammonium succinate, and citric acid.
摘要翻译：提供了一种电解质组合物和使用电解质组合物对晶片的表面进行平面化的方法。一方面，电解质组合物包括磷酸二氢铵，磷酸氢二铵或其混合物。该组合物的pH为约3至约10，这是环境友好的并且不存在危险的操作问题。组合物还可以包含一种或多种选自苯并三唑，柠檬酸铵，乙二胺，四亚乙基五胺，三亚乙基四胺，二亚乙基三胺，氨基酸，草酸铵，氨，琥珀酸铵和柠檬酸的添加剂。

149. 发明授权

US06569215B2 Composition for polishing magnetic disk substrate 失效
标题翻译：抛光磁盘基板的组成
公开(公告)号：US06569215B2
公开(公告)日：2003-05-27
申请号：US09835315
申请日：2001-04-17
申请人： Norihiko Miyata
发明人： Norihiko Miyata
IPC分类号： C09C168
CPC分类号： G11B5/84 , B24B37/044 , C09G1/02
摘要： An object of the present invention is to provide a composition for polishing a magnetic disk substrate that is used as a storage device for a computer or the like, and is capable of producing a magnetic disk substrate polished with high precision suitable for use in combination with a magnetic head that floats at a low level. Another object of the present invention is to provide a method of producing the composition for polishing the magnetic disk substrate. A polishing composition includes alkali metal ions, abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent contained in an aqueous medium. In a method of the present invention for preparing a polishing composition, a pH value of an aqueous medium, in which abrasive grains, a carboxylic acid, an oxidizing agent, and an anti-gelling agent are contained, is adjusted to a range of about 1 to about 5 by the addition of alkali metal hydroxide to the aqueous medium.
摘要翻译：本发明的目的是提供一种用于研磨用作计算机等的存储装置的磁盘基板的组合物，并且能够制造高精度抛光的磁盘基板，其适用于与一个浮在低水平的磁头。本发明的另一个目的是提供一种制备用于抛光磁盘基片的组合物的方法。抛光组合物包含含水介质中的碱金属离子，磨粒，羧酸，氧化剂和抗凝胶剂。在本发明的制备抛光组合物的方法中，将含有磨粒，羧酸，氧化剂和抗胶凝剂的水性介质的pH值调节至约通过向水性介质中加入碱金属氢氧化物1至约5。

150. 发明申请

US20030079416A1 Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权
公开(公告)号：US20030079416A1
公开(公告)日：2003-05-01
申请号：US09932415
申请日：2001-08-17
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09K003/14 , C09G001/02
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

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