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121. 发明申请

US20050173694A1 Type II quantum well mid-infrared optoelectronic devices 有权
标题翻译： II型量子阱中红外光电子器件
公开(公告)号：US20050173694A1
公开(公告)日：2005-08-11
申请号：US10772573
申请日：2004-02-05
申请人： Luke Mawst , Nelson Tansu , Jerry Meyer , Igor Vurgaftman
发明人： Luke Mawst , Nelson Tansu , Jerry Meyer , Igor Vurgaftman
IPC分类号： H01L21/00 , H01L29/06 , H01L33/06 , H01L33/26 , H01L33/32 , H01S5/028 , H01S5/183 , H01S5/22 , H01S5/223 , H01S5/34 , H01S5/343
CPC分类号： H01L33/26 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/028 , H01S5/18311 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3406 , H01S5/3422 , H01S5/3425 , H01S5/34306 , H01S5/3436 , H01S2304/04
摘要： Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.
摘要翻译：诸如二极管激光器的半导体光电器件在具有InAsN或InGaAsN电子量子阱层的有源区域和形成II型量子阱的GaAsSb或InGaAsSb空穴量子阱层的InP衬底上形成。有源区可以结合在各种装置中以提供相对较长波长的发光，包括发光二极管，放大器，表面发射激光器和边缘发射激光器。

122. 发明申请

US20050170076A1 Method of forming thin film patterning substrate including formation of banks 有权
公开(公告)号：US20050170076A1
公开(公告)日：2005-08-04
申请号：US11094767
申请日：2005-03-31
申请人： Shunichi Seki , Hiroshi Kiguchi , Ichio Yudasaka , Hiroo Miyajima
发明人： Shunichi Seki , Hiroshi Kiguchi , Ichio Yudasaka , Hiroo Miyajima
IPC分类号： G02B5/20 , G09F9/00 , G09F9/30 , G09F9/33 , H01L27/32 , H01L33/26 , H01L33/42 , H01L33/48 , H01L51/00 , H01L51/40 , H01L51/50 , H01L51/52 , H01L51/56 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , B05D5/12 , H05B33/00
CPC分类号： H05B33/22 , G02B5/201 , H01L27/322 , H01L27/3246 , H01L51/0005 , H01L51/0014 , H01L51/5284 , H01L2251/558 , H05B33/10 , Y10T428/24802
摘要： Display devices such as EL elements or LED elements, are formed from thin film elements having banks of prescribed height and a thin film layer formed by an ink jet method in areas to be coated that are partitioned by those banks. The banks may be formed of an organic material on a bank formation surface configured of an inorganic material, plasma treatment is performed under conditions that the induction gas is fluorine-based and that fluorine is present excessively, and the areas enclosed by the banks subjected to surface treatment are filled with the liquid thin film material to form the thin film layer or layers.

123. 发明申请

US20050158993A1 Lncuo(s,se,te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film 有权
标题翻译： Lncuo（s，se，te）单晶薄膜，其制造方法以及使用单晶薄膜的光学器件或电子器件
公开(公告)号：US20050158993A1
公开(公告)日：2005-07-21
申请号：US10505219
申请日：2003-02-19
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Masahiro Orita , Hidenori Hiramatsu , Kazushige Ueda
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Masahiro Orita , Hidenori Hiramatsu , Kazushige Ueda
IPC分类号： C30B29/22 , C09K11/00 , C09K11/08 , C09K11/84 , C09K11/88 , C30B23/02 , C30B33/00 , C30B33/02 , H01L21/205 , H01L21/363 , H01L21/365 , H01L29/24 , H01L33/26 , H01L21/44
CPC分类号： C30B33/00 , C30B1/02 , C30B23/02 , C30B29/22 , H01L21/0242 , H01L21/02439 , H01L21/02483 , H01L21/02485 , H01L21/02491 , H01L21/02565 , H01L21/02568 , H01L21/02631 , H01L29/24 , H01L33/26
摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor Teasers, filed-effect transistors, or a hetero-bipolar transistors.
摘要翻译：公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种），其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火。或者更多。虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发光效率和电子迁移率的多晶物质或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体薄片，场效应晶体管或异质双极晶体管的建筑物黑色。

124. 发明授权

US06911084B2 Low temperature epitaxial growth of quaternary wide bandgap semiconductors 失效
标题翻译：四元宽带隙半导体的低温外延生长
公开(公告)号：US06911084B2
公开(公告)日：2005-06-28
申请号：US09981024
申请日：2001-10-16
申请人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
IPC分类号： C30B25/02 , H01L21/205 , H01L33/26 , H01S5/30 , H01S5/32 , C30B25/08
CPC分类号： H01L33/26 , C30B25/02 , C30B29/52 , H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01S5/30 , H01S5/3027 , H01S5/32 , H01S2304/02
摘要： A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
摘要翻译：提供了在550-750℃的温度下生长具有式YCZN的四元外延膜的方法，其中Y是IV族元素，Z是III族元素。在该方法中，将前体H 3 YCN的气体流量和Z原子的蒸气通量引入气体分子束外延（GSMBE）室中，在其中它们结合形成YCZN的薄膜，底物。优选的衬底是硅，碳化硅和AlN /硅结构。提供外延薄膜SiCA1N和GeCA1N。通过调整GSMBE工艺的反应参数和四元合金薄膜成分的相对浓度，可以通过该方法实现带隙工程。通过本方法制造的半导体器件具有约2eV至约6eV的带隙，并且具有从可见到紫外线的光谱范围，使得它们可用于各种光电子和微电子应用。用于生长常规III族氮化物和化合物的大面积衬底由沉积在大直径硅晶片上的SiCAlN产生。四元化合物，特别是含硼化合物，具有极高的硬度。这些四元化合物具有耐辐射性，可用于太空探索。

125. 发明授权

US06841805B2 Method for generating mid-infrared light 失效
标题翻译：用于产生中红外光的方法
公开(公告)号：US06841805B2
公开(公告)日：2005-01-11
申请号：US10192624
申请日：2002-07-10
申请人： Patrick J. McCann , Xiao-Ming Fang
发明人： Patrick J. McCann , Xiao-Ming Fang
IPC分类号： H01L33/06 , H01L33/26 , H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01L33/06
摘要： A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5° C. to about 55° C. and pumping the MQW structures with a shorter wavelength laser pump beam or with an electrical current is provided.
摘要翻译：一种基于合金系统PbSrZ和PbSnZ（其中Z为S，Se或Te）的温度范围为约5℃至约5℃的维持多量子阱（MQW）结构产生中红外光的方法并且提供具有较短波长激光泵浦波束或电流的MQW结构。

126. 发明授权

US6121639A Optoelectronic devices based on ZnGeN.sub.2 integrated with group III-V nitrides 有权
标题翻译：基于与III-V族氮化物集成的ZnGeN2的光电子器件
公开(公告)号：US6121639A
公开(公告)日：2000-09-19
申请号：US137112
申请日：1998-08-20
申请人： Christian Gilbert Van de Walle
发明人： Christian Gilbert Van de Walle
IPC分类号： H01L33/26 , H01L33/00
CPC分类号： H01L33/26
摘要： Group III-V nitride semiconductors are used as light emitters for other optoelectronic devices. To provide the desired range of bandgap and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because of lattice mismatch with GaN, and because of problems with homogeneity. Thus, ZnGeN.sub.2 is provided as the active layer in a blue or blue-green light-emitting device. ZnGeN.sub.2 has a bandgap in the blue region of the spectrum and is almost lattice matched to GaN, making it an ideal candidate for integration with group III-V nitrides.
摘要翻译： III-V族氮化物半导体用作其他光电器件的发光体。为了在异质结构器件中提供期望的带隙和带偏移范围，必须生长InGaN层。 InGaN层由于与GaN的晶格失配而难以生长，并且由于均匀性的问题。因此，ZnGeN2作为有源层提供在蓝色或蓝绿色发光器件中。 ZnGeN2在光谱的蓝色区域具有带隙，几乎与GaN晶格匹配，成为与III-V族氮化物集成的理想选择。

127. 发明授权

US5990494A Optoelectro transducer array, and light-emitting device array and fabrication process thereof 失效
标题翻译：光电转换器阵列，发光元件阵列及其制造方法
公开(公告)号：US5990494A
公开(公告)日：1999-11-23
申请号：US827358
申请日：1997-03-27
申请人： Yasuji Seko , Akemi Murakami , Hiromi Otoma , Nobuaki Ueki , Mario Fuse
发明人： Yasuji Seko , Akemi Murakami , Hiromi Otoma , Nobuaki Ueki , Mario Fuse
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , F21S2/00 , F21V23/00 , F21Y101/02 , H01L33/06 , H01L33/16 , H01L33/26 , H01L33/58 , H01L33/60 , H01S5/00 , H01S5/02 , H04N1/04 , H01L33/00
CPC分类号： B41J2/45
摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.
摘要翻译：描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

128. 发明授权

US4975922A Multi-layered dielectric film 失效
标题翻译：多层电介质膜
公开(公告)号：US4975922A
公开(公告)日：1990-12-04
申请号：US368274
申请日：1989-06-19
申请人： Chitose Sakane , Haruhisa Takiguchi , Hiroaki Kudo , Satoshi Sugahara
发明人： Chitose Sakane , Haruhisa Takiguchi , Hiroaki Kudo , Satoshi Sugahara
IPC分类号： G02B1/10 , G02B1/11 , H01L31/04 , H01L33/10 , H01L33/26 , H01L33/44 , H01S5/00 , H01S5/028
CPC分类号： G02B1/10 , H01S5/028 , H01S5/0281
摘要： A multi-layered dielectric film that is coated on the end surfaces or other surfaces of optical products, wherein said multi-layered dielectric film is composed of alternate layers consisting of two kinds of dielectric layer, one of which is a first dielectric layer of TiO.sub.2 or ZnS with a high refractive index n.sub.1 and the other of which is a second dielectric layer of Al.sub.2 O.sub.3 with a low refractive index n.sub.2.

129. 发明授权

US4940898A Semiconducting metal silicide radiation detectors 失效
标题翻译：半导体金属硅化物辐射探测器
公开(公告)号：US4940898A
公开(公告)日：1990-07-10
申请号：US189310
申请日：1988-05-02
申请人： John E. Mahan
发明人： John E. Mahan
IPC分类号： G02B6/42 , H01L27/146 , H01L31/032 , H01L31/09 , H01L31/103 , H01L31/109 , H01L33/00 , H01L33/26
CPC分类号： H01L33/26 , G02B6/4246 , G02B6/4249 , G02B6/4295 , H01L27/14649 , H01L31/032 , H01L31/09 , H01L31/103 , H01L31/109 , H01L33/002
摘要： Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.
摘要翻译：半导体金属硅化物电磁辐射探测器具有生长或沉积在硅晶片上的半导体金属硅化物薄膜，例如二硅化铼。检测器是本征半导体检测器，并且可以形成为分立器件，或者单片地形成在硅芯片上，以提供集成的检测器或检测器阵列。半导体铼二硅化物检测器在与某些光纤的传输能力相匹配的波长下是有效的，从而增强红外检测器和先前已知的光纤传输的组合。由这些铼二硅化物检测器检测的电磁辐射的范围包括高达14微米的波长的红外范围。

130. 发明授权

US4841293A Process for displaying information 失效
标题翻译：显示信息的过程
公开(公告)号：US4841293A
公开(公告)日：1989-06-20
申请号：US21281
申请日：1987-03-03
申请人： Masaaki Takimoto
发明人： Masaaki Takimoto
IPC分类号： H05B33/00 , G02F1/15 , G09G3/14 , H01L33/26 , H01L33/40 , H01L51/50 , H05B33/12
CPC分类号： G02F1/1523
摘要： A display panel comprising of a semiconducting oxide between layers of a hole injector and an electron injector. The electron injector contains a metal oxide in a fine particulate form. When the electron injector is biased negatively with respect to the hole injector, both holes and electrons are injected and an image is formed by the trapping of electrons in color centers in the oxide layer. Reverse biasing erases the image.
摘要翻译：一种显示面板，包括在空穴注入器和电子注入器的层之间的半导体氧化物。电子注入器含有细颗粒形式的金属氧化物。当电子注入器相对于空穴注入器被负偏压时，注入空穴和电子，并且通过在氧化物层中的彩色中心中俘获电子形成图像。反向偏移消除图像。

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