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    • 122. 发明授权
    • High contrast photoresists comprising acid sensitive crosslinked
polymeric resins
    • 包含酸敏感交联聚合物树脂的高对比度光致抗蚀剂
    • US5712078A
    • 1998-01-27
    • US476793
    • 1995-06-07
    • Wu-Song HuangHarold George LindeCharles Arthur Whiting
    • Wu-Song HuangHarold George LindeCharles Arthur Whiting
    • C08L25/02C08L61/10C08L101/00G03F7/004G03F7/039H01L21/027G03C1/73
    • G03F7/0045G03F7/039Y10S430/106
    • Acid sensitive polymeric compositions, and improved chemically amplified microlithographic resist compositions comprising the acid sensitive polymeric compositions, and methods for the preparation and use thereof are disclosed. The compositions comprise, in admixture, a polymeric binder, an acid labile moiety which provides selective aqueous base solubility upon cleavage, and a compound that generates acid upon exposure of the resist composition to imaging radiation. More particularly, the compositions have one or more acid labile ketal groups, which may be chemically linked to a polymeric resin or which may be incorporated into a separate component to form a dissolution inhibitor. Crosslinking of the polymer to produce a high molecular weight, nonpolar resin may also occur by ketal exchange. Upon exposure, molecular weight and polarity changes of the crosslinked resin produce high contrast during development. The compositions exhibit reduced sensitivity to environmental contaminants when compared to known acid amplified resist compositions, and may optionally be processed without a post exposure bake step. Such compositions are especially useful in the fabrication of integrated circuit devices by microlithographic techniques.
    • 公开了酸敏感聚合物组合物和包含酸敏聚合物组合物的改进的化学放大微光蚀刻剂组合物及其制备和使用方法。 组合物包含聚合物粘合剂,其在裂解时提供选择性碱性溶解度的酸不稳定部分,以及当将抗蚀剂组合物暴露于成像辐射时产生酸的化合物。 更具体地,组合物具有一个或多个酸不稳定的缩酮基团,其可以与聚合物树脂化学连接,或者可以并入到单独的组分中以形成溶解抑制剂。 聚合物的交联以产生高分子量的非极性树脂也可以通过缩酮交换进行。 暴露后,交联树脂的分子量和极性变化在显影过程中产生高对比度。 当与已知的酸扩增抗蚀剂组合物相比时,该组合物对环境污染物的敏感性降低,并且可以任选地在没有后曝光烘烤步骤的情况下进行处理。 这种组合物通过微光刻技术在集成电路器件的制造中特别有用。
    • 126. 发明授权
    • Chemical trim of photoresist lines by means of a tuned overcoat
    • 通过调整的外涂层对光致抗蚀剂线进行化学修饰
    • US08137893B2
    • 2012-03-20
    • US12983297
    • 2011-01-01
    • Sean David BurnsMatthew E. ColburnSteven John HolmesWu-Song Huang
    • Sean David BurnsMatthew E. ColburnSteven John HolmesWu-Song Huang
    • G03F7/00G03F7/004G03F7/40
    • G03F7/40Y10T428/24802
    • A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
    • 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影,以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。
    • 127. 发明授权
    • Fused aromatic structures and methods for photolithographic applications
    • 熔融芳族结构和光刻应用的方法
    • US08029975B2
    • 2011-10-04
    • US12508652
    • 2009-07-24
    • James J. BucchignanoWu-Song HuangPushkara R. VaranasiRoy R. Yu
    • James J. BucchignanoWu-Song HuangPushkara R. VaranasiRoy R. Yu
    • G03F7/004G03F7/039G03F7/20G03F7/30G03F7/38
    • G03F7/0045G03F7/0392Y10S430/12Y10S430/122Y10S430/126Y10S430/143
    • A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
    • 抗蚀剂组合物和在基材上形成图案化特征的方法。 该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。 该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物,在该基质上形成该组合物的膜,图案成像 所述膜,其中所述膜的至少一个区域暴露于辐射或颗粒束,导致在所述暴露区域中产生酸催化剂,烘烤所述膜,显影所述膜,导致去除可溶于碱的暴露区域 ,其中来自膜的图案化特征在去除之后保持不变。
    • 128. 发明授权
    • Chemical trim of photoresist lines by means of a tuned overcoat material
    • 通过调谐的外涂层材料对光致抗蚀剂线进行化学修饰
    • US07862982B2
    • 2011-01-04
    • US12137743
    • 2008-06-12
    • Sean David BurnsMatthew E. ColburnSteven John HolmesWu-Song Huang
    • Sean David BurnsMatthew E. ColburnSteven John HolmesWu-Song Huang
    • G03F7/00G03F7/004G03F7/40
    • G03F7/40Y10T428/24802
    • A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
    • 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。
    • 129. 发明申请
    • METHOD OF FORMING A PATTERN OF AN ARRAY OF SHAPES INCLUDING A BLOCKED REGION
    • 形成包括封闭区域的图形阵列的图案的方法
    • US20100272967A1
    • 2010-10-28
    • US12430919
    • 2009-04-28
    • Chia-Chen ChenWu-Song HuangWai-Kin LiChandrasekhar Sarma
    • Chia-Chen ChenWu-Song HuangWai-Kin LiChandrasekhar Sarma
    • G03F7/20B32B3/10
    • G03F7/70466G03F1/70G03F7/095G03F7/203Y10T428/24802
    • A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.
    • 在基板上形成具有第二光敏性的第二光致抗蚀剂。 在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 优选地,第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。 使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分,而第二光致抗蚀剂保持完整。 使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光,以在第二光致抗蚀剂中形成多个光刻曝光的形状。 多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。