专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明申请

US20190393053A1 ETCHING APPARATUS 审中-公开
公开(公告)号：US20190393053A1
公开(公告)日：2019-12-26
申请号：US16441579
申请日：2019-06-14
申请人： Applied Materials, Inc.
发明人： Yang YANG , Kartik RAMASWAMY , Kenneth S. COLLINS , Steven LANE , Gonzalo MONROY , Lucy Zhiping CHEN , Yue GUO
IPC分类号： H01L21/67 , H01L21/311 , C23C16/517 , C23C16/02
摘要： Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

112. 发明授权

US09882167B2 Hybrid layers for use in coatings on electronic devices or other articles 有权
公开(公告)号：US09882167B2
公开(公告)日：2018-01-30
申请号：US15008834
申请日：2016-01-28
申请人： The Trustees of Princeton University , Universal Display Corporation
发明人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
IPC分类号： H01L51/52 , C23C16/02 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/455 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/56
CPC分类号： H01L51/5253 , C23C16/02 , C23C16/0272 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/45523 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/5203 , H01L51/5259 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/566
摘要： A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

113. 发明授权

US09738972B2 Tandem source activation for CVD of films 有权
公开(公告)号：US09738972B2
公开(公告)日：2017-08-22
申请号：US14837612
申请日：2015-08-27
申请人： LAM RESEARCH CORPORATION
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455 , C23C16/40 , C23C16/507 , C23C16/509 , C23C16/517
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/455 , C23C16/45536 , C23C16/45538 , C23C16/45542 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

114. 发明授权

US09252391B2 Hybrid layers for use in coatings on electronic devices or other articles 有权
公开(公告)号：US09252391B2
公开(公告)日：2016-02-02
申请号：US14065877
申请日：2013-10-29
申请人： Princeton University , UNIVERSAL DISPLAY CORPORATION
发明人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
IPC分类号： H01L51/52 , C23C16/02 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/455 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00
CPC分类号： H01L51/5253 , C23C16/02 , C23C16/0272 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/45523 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/5203 , H01L51/5259 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/566
摘要： A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

115. 发明授权

US08975603B2 Systems and methods for plasma doping microfeature workpieces 有权
标题翻译：等离子体掺杂微型工件的系统和方法
公开(公告)号：US08975603B2
公开(公告)日：2015-03-10
申请号：US14171430
申请日：2014-02-03
申请人： Micron Technology, Inc.
发明人： Shu Qin , Allen McTeer
IPC分类号： G21K5/04 , C23C16/515 , C23C14/48 , C23C14/16 , H01L21/223 , H01J37/32 , C23C16/517 , C23C16/28
CPC分类号： C23C14/48 , C23C14/16 , C23C16/28 , C23C16/515 , C23C16/517 , H01J37/32412 , H01L21/2236 , Y10S438/914
摘要： Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
摘要翻译：本文公开了等离子体掺杂微型工件的系统和方法。在一个实施例中，将硼离子注入到工件的区域中的方法包括在腔室中产生等离子体，以大约20％至大约50％的占空比选择性地将脉冲电势施加到工件，并且植入离子种类进入工件的区域。

116. 发明申请

US20120090990A1 Deposition Apparatus and Methods to Reduce Deposition Asymmetry 失效
标题翻译：沉积装置和减少沉积不对称的方法
公开(公告)号：US20120090990A1
公开(公告)日：2012-04-19
申请号：US12906632
申请日：2010-10-18
申请人： Michael S. Cox
发明人： Michael S. Cox
IPC分类号： C23C14/46 , C23C16/52 , C23C16/517 , C23C16/455 , C23C16/458
CPC分类号： C23C14/35 , C23C14/34 , C23C16/50 , H01J37/32669 , H01J37/3405
摘要： One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.
摘要翻译：本发明的一个或多个实施例涉及包括接地顶壁，处理室和等离子体源组件的沉积设备，其具有导电中空圆柱体和导电中空圆柱体外部的磁体，其能够影响导电中空圆柱体上的电流密度。

117. 发明授权

US07819082B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07819082B2
公开(公告)日：2010-10-26
申请号：US12402172
申请日：2009-03-11
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23C16/511 , C23C16/50 , C23C16/517 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/24 , C23C16/345 , C23C16/45578 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.
摘要翻译：在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。优化了微波引入部分的电介质材料分离壁102和电介质材料中的每一个的厚度，以使等离子体激发效率最大化，并且同时，缝隙天线110与电介质材料分离之间的距离电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

118. 发明授权

US07748344B2 Segmented resonant antenna for radio frequency inductively coupled plasmas 有权
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US07748344B2
公开(公告)日：2010-07-06
申请号：US10702368
申请日：2003-11-06
申请人： William F. DiVergilio , Victor M. Benveniste , Peter L. Kellerman
发明人： William F. DiVergilio , Victor M. Benveniste , Peter L. Kellerman
IPC分类号： C23C16/452 , C23C16/507 , C23C16/509 , C23C16/517 , C23C16/505 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电的带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

119. 发明申请

US20070221294A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070221294A1
公开(公告)日：2007-09-27
申请号：US11691154
申请日：2007-03-26
申请人： Masaru SASAKI
发明人： Masaru SASAKI
IPC分类号： C23C16/517
CPC分类号： H01J37/32458 , H01J37/32192 , H01J37/3222 , H01L21/0217 , H01L21/0223 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/31662 , H01L21/3185
摘要： A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna including a plurality of slots and configured to supply microwaves into the process container; a gas feed mechanism configured to supply a process gas into the process container; and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.
摘要翻译：等离子体处理装置包括：处理容器，被配置为容纳目标物体并保持其中的真空以进行等离子体处理; 配置成将目标物体放置在处理容器内的工作台; 平面天线，包括多个槽并且被配置为将微波供应到所述处理容器中; 气体供给机构，其构造成将处理气体供给到所述处理容器中; 以及与工作台相对设置的顶板，顶板设置在与放置在工作台上的目标物体分开的距离为20mm以上且100mm以下的位置。

120. 发明申请

US20050263071A1 Apparatus and system for manufacturing a semiconductor 审中-公开
标题翻译：用于制造半导体的装置和系统
公开(公告)号：US20050263071A1
公开(公告)日：2005-12-01
申请号：US11006578
申请日：2004-12-08
申请人： Shigeru Yagi , Nobuyuki Torigoe
发明人： Shigeru Yagi , Nobuyuki Torigoe
IPC分类号： C23C16/50 , C23C16/00 , C23C16/30 , C23C16/517 , H01L21/205
CPC分类号： C23C16/517 , C23C16/303
摘要： The present invention provides an apparatus for manufacturing a semiconductor including: a reactor; a substrate holder for supporting a substrate; a primary gas supply unit for supplying a primary gas to the reactor; a secondary gas supply unit for supplying a secondary gas to the reactor; a first plasma generator for activating the primary gas to produce an activated gas; and a second plasma generator for activating a gas flow which includes the activated gas, wherein the gas flow is blown substantially perpendicularly onto a surface of the substrate on which surface a film is to be formed, and the second plasma generator discharges toward the center of the gas flow. The present invention also provides a system for manufacturing a semiconductor including the apparatus described above and a unit for moving the substrate holder.
摘要翻译：本发明提供一种半导体制造装置，包括：反应器; 用于支撑衬底的衬底保持器; 用于向所述反应器供应初级气体的主要气体供应单元; 用于向所述反应器供给二次气体的二次气体供给单元; 第一等离子体发生器，用于激活一次气体以产生活性气体; 以及第二等离子体发生器，其用于激活包括所述活性气体的气流，其中所述气流基本上垂直地吹向所述基板的要在其上形成膜的表面的表面上，并且所述第二等离子体发生器朝向气流。本发明还提供一种用于制造包括上述装置的半导体的系统和用于移动衬底保持器的单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式