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1. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

2. 发明授权

US08114245B2 Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：US08114245B2
公开(公告)日：2012-02-14
申请号：US10304869
申请日：2002-11-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509 , C23C16/52 , C23C16/505 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.
摘要翻译：一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻完成了。在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

3. 发明申请

US20100183827A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100183827A1
公开(公告)日：2010-07-22
申请号：US12663764
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
发明人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
IPC分类号： H05H1/46 , C23C16/511
CPC分类号： C23C16/511 , B05C13/00 , H01J37/32192 , H01J37/32266 , H05H1/46
摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
摘要翻译：提供能够减少电介质部件的使用量的等离子体处理装置。等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

4. 发明申请

US20070221623A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20070221623A1
公开(公告)日：2007-09-27
申请号：US11689180
申请日：2007-03-21
申请人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
发明人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B44C1/22 , C23C16/00 , C23F1/00 , H05H1/24
CPC分类号： H01J37/32568 , C23C16/45572 , C23C16/45574 , C23C16/511 , H01J37/32192 , H01J37/32211
摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.
摘要翻译：提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成，以相对于矩形波导的底面上下移动。为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动，微波炉微波炉的功率。

5. 发明申请

US20060281323A1 Method of cleaning substrate processing apparatus 审中-公开
标题翻译：清洗基板处理装置的方法
公开(公告)号：US20060281323A1
公开(公告)日：2006-12-14
申请号：US10555668
申请日：2004-04-22
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , H01J37/32192 , H01J2237/335
摘要： A method for cleaning a microwave plasma processing apparatus is disclosed wherein a cleaning gas is introduced and then excited with microwave plasma (step 3). By applying high-frequency power to a substrate supporting stage by which a substrate to be processed is supported (step 4), the etching rate is improved, thereby shortening the cleaning time.
摘要翻译：公开了一种清洁微波等离子体处理装置的方法，其中引入清洁气体，然后用微波等离子体激发（步骤3）。通过对被处理基板的基板支撑台施加高频电力（步骤4），能够提高蚀刻速度，缩短清洗时间。

6. 发明授权

US07000419B1 High-efficiency gas temperature/humidity controlling device and controlling method 失效
标题翻译：高效气体温湿度控制装置及控制方法
公开(公告)号：US07000419B1
公开(公告)日：2006-02-21
申请号：US10070579
申请日：2000-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Masaki Hirayama , Hideo Hanaoka , Takeshi Honma , Hirokazu Suzuki , Yoshio Yamazaki , Yoshinori Ohkubo
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Masaki Hirayama , Hideo Hanaoka , Takeshi Honma , Hirokazu Suzuki , Yoshio Yamazaki , Yoshinori Ohkubo
IPC分类号： F24F3/16 , F25D2/10
CPC分类号： F24F13/222 , F24F11/41 , F25D21/14
摘要： The present invention has an object to comprise an apparatus for high efficiency gas temperature and humidity adjustment and an adjustment method allowing to elevate the heat exchange efficiency of a cooling coil, reduce the cooling water quantity, lower also the pipe arrangement diameter and water supply pump power, making possible to cut the initial cost and running cost of the air-conditioning system.The apparatus for high efficiency gas temperature and humidity adjustment is characterized by that means for removing condensate water deposited on the cooling coil.
摘要翻译：本发明的目的是提供一种用于高效率气体温度和湿度调节的装置和一种允许提高冷却盘管的热交换效率的调节方法，降低冷却水量，降低管道排放直径和供水泵电力，有可能降低空调系统的初始成本和运行成本。

7. 发明授权

US06929830B2 Plasma treatment method and method of manufacturing optical parts using the same 失效
标题翻译：使用其制造光学部件的等离子体处理方法和方法
公开(公告)号：US06929830B2
公开(公告)日：2005-08-16
申请号：US10449106
申请日：2003-06-02
申请人： Goushu Tei , Nobuyoshi Tanaka , Tadahiro Ohmi , Masaki Hirayama
发明人： Goushu Tei , Nobuyoshi Tanaka , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23C16/44 , C23C16/455 , C23C16/511 , H01J37/32 , B05D5/06 , C03C17/245 , H05H1/46
CPC分类号： C23C16/45565 , C23C16/511 , H01J37/32192
摘要： A method for treating a non-planar surface of an object by employing a plasma treatment apparatus in which a microwave dielectric has a non-planar surface corresponding to the surface of the object. A method for forming an optical part is also provided.
摘要翻译：一种通过采用等离子体处理装置处理物体的非平面表面的方法，其中微波介电体具有对应于物体表面的非平面表面。还提供了一种用于形成光学部件的方法。

8. 发明授权

US06866747B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06866747B2
公开(公告)日：2005-03-15
申请号：US10843004
申请日：2004-05-10
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H1/46 , B23K10/00 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/30 , H05H1/00 , C23C16/00
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

9. 发明申请

US20050042869A1 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20050042869A1
公开(公告)日：2005-02-24
申请号：US10467820
申请日：2002-12-10
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23C16/56 , C23C8/36 , C23C16/02 , C23C16/511 , H01J37/32 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02247 , C23C8/36 , H01J37/321 , H01J37/32357 , H01L21/02252 , H01L21/3143 , H01L21/318
摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
摘要翻译：在衬底处理设备中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的工艺空间（11C）。控制电极包括形成在处理容器中并具有用于通过等离子体的多个孔（131a）的导电构件。控制电极的表面被氧化铝或导电氮化物覆盖。在基板处理装置中，将含有He和N2的气体供给到处理容器中。在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。原子态氮N *用于氮化衬底的表面。

10. 发明授权

US06690702B1 Excimer laser oscillation apparatus and method, excimer laser exposure apparatus, and laser tube 有权
标题翻译：准分子激光振荡装置和方法，准分子激光曝光装置和激光管
公开(公告)号：US06690702B1
公开(公告)日：2004-02-10
申请号：US09528183
申请日：2000-03-17
申请人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
发明人： Tadahiro Ohmi , Nobuyoshi Tanaka , Masaki Hirayama
IPC分类号： H01S304
CPC分类号： H01S3/225 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/0973
摘要： In an excimer laser oscillation apparatus including a laser chamber (20) constituted by a laser tube (2) for storing a laser gas containing a gas mixture of at least one inert gas selected from the group consisting of Kr, Ar, and Ne, He and F2 gas, and an optical resonator consisting of a pair of reflection mirrors (5, 6) arranged to sandwich the laser chamber (20) therebetween, the inner surface of the laser chamber (20) for storing the laser gas has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm, and the uppermost surface of the inner surface consists of a fluoride, and a means (waveguide 1) for introducing a microwave for exciting the laser gas in the laser chamber (20) is prepared. With this arrangement, an excimer laser oscillation apparatus, an oscillation method, and an exposure apparatus can be provided, which can reduce the load on the lens material and its surface, can simplify the mirror or laser scanning control system, and are satisfactorily used in mass production since the service life of an excimer laser can be sufficiently prolonged.
摘要翻译：在包括由激光管（2）构成的激光室（20）的准分子激光振荡装置中，所述激光管（2）用于存储含有选自Kr，Ar和Ne的至少一种惰性气体的气体混合物的激光气体，He 和F2气体，以及由设置成将激光室（20）夹在其间的一对反射镜（5,6）构成的光谐振器，用于存储激光气体的激光室（20）的内表面具有反射 - 相对于248nm，193nm或157nm的所需波长的光的自由表面，并且内表面的最上表面由氟化物组成，并且用于引入微波激励激光气体的装置（波导1）在激光室（20）中。通过这种布置，可以提供准分子激光振荡装置，振荡方法和曝光装置，其可以减少透镜材料及其表面上的负载，可以简化镜子或激光扫描控制系统，并且令人满意地使用由于准分子激光器的使用寿命可以充分延长，因此大量生产。

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