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    • 112. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07906821B2
    • 2011-03-15
    • US12129191
    • 2008-05-29
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/76H01L29/94H01L29/788H01L27/148H01L29/768
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 113. 再颁专利
    • Process for producing a fluorine atom-containing sulfonyl fluoride compound
    • 含氟原子的磺酰氟化合物的制造方法
    • USRE41806E1
    • 2010-10-05
    • US11812533
    • 2007-06-19
    • Masahiro ItoKunio WatanabeTakashi OkazoeIsamu KanekoDaisuke Shirakawa
    • Masahiro ItoKunio WatanabeTakashi OkazoeIsamu KanekoDaisuke Shirakawa
    • C07C309/00
    • C07C309/82C07C51/60C07C303/22C07C59/135
    • The present invention provides a process whereby fluorine atom-containing sulfonyl fluoride compound(s) useful as e.g. materials for ion-exchange membranes, can be produced efficiently and at low cost without structural limitations while solving the difficulties in production. Namely, the present invention provides a process which comprises reacting XSO2RA-E1 (1) with RB-E2 (2) to form XSO2R4-E-RB (3), then reacting (3) with fluorine in a liquid phase to form FSO2RAF-EF-RBF (4), and further, decomposing the compound to obtain FSO2RAF-EFl (5), wherein RA is a bivalent organic group, E1 is a monovalent reactive group, RB is a monovalent organic group, E2 is a monovalent reactive group which is reactive with E1, E is a bivalent connecting group formed by the reaction of E1 with E2, RAF is a bivalent organic group formed by the fluorination of RA, etc., RBF is the same group as RB, etc., EF1 is a bivalent connecting group formed by the fluorination of E, etc., EF1 is a monovalent group formed by the decomposition of EF, and X is a halogen atom.
    • 本发明提供了一种可用于例如氟原子的磺酰氟化合物的方法。 用于离子交换膜的材料可以在没有结构限制的情况下有效且低成本地生产,同时解决生产上的困难。 即,本发明提供一种方法,其包括使XSO2RA-E1(1)与RB-E2(2)反应形成XSO 2 R 4 -E-RB(3),然后使(3)与氟在液相中反应形成FSO2RAF- EF-RBF(4),进一步分解化合物,得到FSO2RAF-EF1(5),其中RA为二价有机基团,E1为单价反应性基团,RB为一价有机基团,E2为单价反应基团 E与E1反应,E是通过E1与E2的反应形成的二价连接基团,RAF是通过RA的氟化形成的二价有机基团等,RBF与RB等同,EF1是 通过E的氟化形成的二价连接基团等,EF1是通过EF的分解形成的一价基团,X是卤素原子。
    • 115. 发明授权
    • Process for producing perfluorodiacyl fluorinated compounds
    • 制备全氟二碘氟化合物的方法
    • US07501540B2
    • 2009-03-10
    • US11770889
    • 2007-06-29
    • Shu-zhong WangTakashi OkazoeEisuke MurotaniKunio WatanabeDaisuke ShirakawaKazuya Oharu
    • Shu-zhong WangTakashi OkazoeEisuke MurotaniKunio WatanabeDaisuke ShirakawaKazuya Oharu
    • C07C21/18C07C53/38C07C55/36
    • C07C59/60C07C51/09C07C59/315C07C67/14C07C67/31C07C69/708C07C69/734
    • The present invention provides a process for producing compounds useful as raw materials for various fluororesins in high yields in few steps from inexpensive and readily available starting materials.The following compound (1) and the following compound (2) are reacted to form the following compound (3), then the compound (3) is fluorinated in a liquid phase to form the following compound (4), and the ester bonds in the compound (4) are dissociated to form the compound (5), or the compound (5) and the compound (6). HOCH2-Q-O—(CH2)3—OH  (1), CRBCOX  (2), RBCOOCH2-Q-O—(CH2)3—OCORB  (3), RBFCOOCF2-QF-O—(CF2)3—OCORBF  (4), FCO-QF-O—(CF2)2—COF  (5), RBFCOF  (6).
    • 本发明提供了从廉价且易于获得的起始原料以几步的方式高产率地生产用作各种氟树脂的原料的化合物的方法。 使下列化合物(1)和下列化合物(2)反应形成下列化合物(3),然后将化合物(3)在液相中氟化,形成下列化合物(4) 解离化合物(4)以形成化合物(5)或化合物(5)和化合物(6)。 HO-2-QO-(CH2)3-OH(1),<?in-line-formula description =“In-line formula”end =“lead” “end =”tail“?> <?in-line-formula description =”In-line formula“end =”lead“?> CRBCOX(2),<?in-line-formula description =”In-line Formulas“ end =“tail”?> <?in-line-formula description =“In-line formula”end =“lead”?> RBCOOCH2-QO-(CH2)3-OCORB(3),<?in-line-formula 描述=“在线公式”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> RBFCOOCF2-QF-O-(CF2)3-OCORBF 4),<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> FCO-QF -O-(CF2)2-COF(5),<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas” end =“lead”?> RBFCOF(6)。<?in-line-formula description =“In-line Formulas”end =“tail”?>
    • 117. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07394137B2
    • 2008-07-01
    • US11519169
    • 2006-09-11
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/76H01L29/94H01L31/062
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 119. 发明授权
    • Fluorinated adamantane derivatives
    • 氟化金刚烷衍生物
    • US07314952B2
    • 2008-01-01
    • US11143978
    • 2005-06-03
    • Takashi OkazoeKunio WatanabeMasahiro ItoEisuke Murotani
    • Takashi OkazoeKunio WatanabeMasahiro ItoEisuke Murotani
    • C07C69/63
    • C07C69/753C07C35/52C07C69/708C07C2603/74
    • The present invention provides novel compounds which are useful for the production of fluorinated adamantane derivatives excellent in etching resistance and useful as photolithographic material and so on. Namely, the present invention provides compounds represented by the following formulae (3) and (4): A(-G-Q-R)n  (3) Af(-Gf-Q-Rf)n  (4) provided that the symbols in the formula have the following meanings: A: a n-valent group having n hydrogen atoms of adamantane converted to connecting bonds, wherein hydrogen atoms not converted to connecting bonds, may be each substituted by an alkyl group, R: a fluorinated monovalent organic group, n: an integer of from 1 to 4, G: —CH2— or a single bond, Q: —COO— or —OCO—, Af: a n-valent group (A) having n hydrogen atoms bonded to carbon atoms of adamantane converted to connecting bonds, wherein hydrogen atoms not converted to connecting bonds, may be each substituted by an alkyl group, in which at least one of hydrogen atoms forming C—H bonds is substituted by a fluorine atom, Rf: a fluorinated monovalent organic group, Gf: —CF2— or a single bond.
    • 本发明提供了可用于制备耐腐蚀性优异且用作光刻材料等的氟化金刚烷衍生物的新化合物。 即,本发明提供由下式(3)和(4)表示的化合物:<?in-line-formula description =“In-line formula”end =“lead”?> A(-GQR) (3)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead” (4)<?------------------((((((((((-((----------------- 公式描述=“直列公式”end =“tail”?>条件是式中的符号具有以下含义:A:具有转化为连接键的金刚烷的n个氢原子的n价基团,其中氢原子不 转化成连接键,可以各自被烷基取代,R:氟化一价有机基团,n:1〜4的整数,G:-CH 2 - 或单键, Q:-COO-或-OCO-,A0:具有与键合到金刚烷的碳原子上的n个氢原子的n价基团(A)转化为连接键,其中未转化为连接键的氢原子 可以各自被烷基取代,其中至少一个形成CH键的氢原子被氟原子取代:氟化一价有机基团, -CF 2 - 或单键。