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    • 105. 发明授权
    • Transparent conductive film and manufacturing method therefor
    • 透明导电膜及其制造方法
    • US09588606B2
    • 2017-03-07
    • US13592718
    • 2012-08-23
    • Yuka YamazakiTomotake NashikiHideo Sugawara
    • Yuka YamazakiTomotake NashikiHideo Sugawara
    • B32B3/00G06F3/041
    • C23C14/086C23C14/024C23C14/35C23C14/5873G06F3/041G06F2203/04103Y10T428/266
    • The present invention is a transparent conductive film having a flexible transparent base and a transparent conductive layer made of a crystalline conductive metal oxide that is formed on one surface of the flexible transparent base, in which the thickness of the flexible transparent base is 80 μm or less, and the difference H1−H2 between the dimensional change rate H1 when the transparent conductive film is heated at 140° C. for 30 minutes and the dimensional change rate H2 when the transparent conductive layer is removed from the transparent conductive film by etching and the transparent conductive film is heated at 140° C. for 30 minutes is −0.02 to 0.043%. Because of that, the level difference at the pattern boundary when the film is assembled into a touch panel, etc. is decreased and the deterioration of the appearance can be also suppressed.
    • 本发明是一种透明导电膜,其具有柔性透明基底和由结晶导电金属氧化物制成的透明导电层,该透明​​导电层形成在柔性透明基底的一个表面上,柔性透明基底的厚度为80μm, 并且当透明导电膜在140℃下加热30分钟时的尺寸变化率H1与通过蚀刻从透明导电膜去除透明导电膜时的尺寸变化率H2之间的差异H1-H2以及 透明导电膜在140℃下加热30分钟,为-0.02〜0.043%。 因此,当将膜组装成触摸面板等时的图案边界处的水平差降低,并且还可以抑制外观的劣化。
    • 109. 发明授权
    • Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour depositon synthesis techniques
    • US09478938B2
    • 2016-10-25
    • US14419340
    • 2013-08-09
    • Element Six Technologies Limited
    • Gruffudd Trefor WilliamsJoseph Michael DodsonPaul Nicolas InglisChristopher John Kelly
    • B32B3/00H01S5/024C01B31/06C23C16/27C30B25/10C30B29/04C23C16/511C23C16/52C30B25/16C30B25/18
    • H01S5/02484C01B32/25C23C16/274C23C16/511C23C16/52C30B25/105C30B25/16C30B25/18C30B29/04Y10T428/21Y10T428/24471
    • A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm−1K−1, the method comprising: loading a refractory metal substrate into a CVD reactor; locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width 1.5 mm to 5.0 mm; introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the refractory metal substrate is in a range 2.5 to 4.5 W mm−2; introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N2, a carbon containing gas concentration in a range 0.5% to 3.0% by volume, and a hydrogen concentration in a range 92% to 98.5% by volume; controlling an average temperature of the refractory metal substrate to lie in a range 750° C. to 950° C. and to maintain a temperature difference between an edge and a centre point on the refractory metal substrate of no more than 80° C. growing polycrystalline CVD synthetic diamond material to a thickness of at least 1.3 mm on the refractory metal substrate; and cooling the polycrystalline CVD synthetic diamond material to yield a polycrystalline CVD synthetic diamond material having a thickness of at least 1.3 mm, an average thermal conductivity at room temperature through the thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm−1K−1 over at least a central area of the polycrystalline CVD synthetic diamond material, wherein the central area is at least 70% of a total area of the polycrystalline CVD synthetic diamond material, a single substitutional nitrogen concentration no more than 0.80 ppm over at least the central area of the polycrystalline CVD synthetic diamond material, and wherein the polycrystalline CVD synthetic diamond material is substantially crack free over at least the central area thereof such that the central area has no cracks which intersect both external major faces of the polycrystalline CVD synthetic diamond material and extend greater than 2 mm in length.