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101. 发明授权

US5990591A Permanent magnet type synchronous motor 失效
标题翻译：永磁同步电机
公开(公告)号：US5990591A
公开(公告)日：1999-11-23
申请号：US027223
申请日：1998-02-20
申请人： Yasuo Yamaguchi , Masahiro Hasebe , Satoru Wakuta
发明人： Yasuo Yamaguchi , Masahiro Hasebe , Satoru Wakuta
IPC分类号： H02K1/22 , H02K1/27 , H02K15/03 , H02K21/16 , H02K21/12 , H02K1/00 , H02K19/00
CPC分类号： H02K1/276 , H02K1/2766 , H02K7/006
摘要： A permanent magnet type synchronous motor includes an iron core rotor having a plurality of holes which are circumferentially spaced, permanent magnets mounted in the holes, an iron core stator and coils arranged in the stator iron core. The permanent magnets are defined by a flat surface extending tangentially of the rotor, tapered surfaces formed at both ends of the flat surface and extending obliquely outward in a direction approaching each other, and an arcuate surface joining the two tapered surfaces. Each permanent magnet is supported by tapered surfaces formed at opposing ends of the holes and extending obliquely and radially outward in a direction approaching each other. When the rotor is rotated, the centrifugal force is received at the tapered surfaces of the holes, rather than at their arcuate portion.
摘要翻译：永磁式同步电动机包括铁心转子，铁芯转子具有周向间隔开的多个孔，安装在孔中的永磁体，铁芯定子和布置在定子铁心中的线圈。永久磁铁由转子切向平坦的平面限定，在平坦表面的两端形成锥形表面，并且在彼此靠近的方向上倾斜向外延伸，并且连接两个锥形表面的弓形表面。每个永磁体由形成在孔的相对端处的锥形表面支撑，并且在彼此接近的方向上倾斜并径向向外延伸。当转子旋转时，离心力被接收在孔的锥形表面处，而不是在其弓形部分处。

102. 发明授权

US5926703A LDD device having a high concentration region under the channel 失效
标题翻译： LDD器件在通道下方具有高浓度区域
公开(公告)号：US5926703A
公开(公告)日：1999-07-20
申请号：US785277
申请日：1997-01-21
申请人： Yasuo Yamaguchi , Hans-Oliver Joachim , Yasuo Inoue
发明人： Yasuo Yamaguchi , Hans-Oliver Joachim , Yasuo Inoue
IPC分类号： H01L29/40 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/78 , H01L29/786 , H01L21/44
CPC分类号： H01L29/66757 , H01L27/1203 , H01L29/78606 , H01L29/78609 , H01L29/78621
摘要： It is an object to obtain a semiconductor device with the LDD structure having both operational stability and high speed and a manufacturing method thereof. A high concentration region (11) with boron of about 1.times.10.sup.18 /cm.sup.3 introduced therein is formed extending from under a channel formation region (4) to under a drain region (6) and a source region (6') in a silicon substrate (1). The high concentration region (11) is formed in the surface of the silicon substrate (1) under the channel formation region (4), and is formed at a predetermined depth from the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). A low concentration region (10) is formed in the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). The formation of the high concentration region only in the surface of the semiconductor substrate under the channel formation region surely suppresses an increase in the leakage current and an increase in the drain capacitance.
摘要翻译：本发明的目的是获得具有操作稳定性和高速度的LDD结构的半导体器件及其制造方法。导入其中引入了约1×10 18 / cm 3的硼的高浓度区域（11）形成在沟道形成区域（4）下方延伸到漏极区域（6）下方的硅衬底（1）中的源极区域（6'））。在硅衬底（1）的沟道形成区域（4）的表面上形成高浓度区域（11），并且形成在与硅衬底（1）的漏极区域 6）和源极区（6'）。在漏极区域（6）和源极区域（6'）的下方的硅衬底（1）的表面中形成低浓度区域（10）。仅在沟道形成区域的半导体衬底的表面形成高浓度区域确实地抑制了漏电流的增加和漏极电容的增加。

103. 发明授权

US5905286A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5905286A
公开(公告)日：1999-05-18
申请号：US794504
申请日：1997-02-04
申请人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Shigenobu Maeda , Shoichi Miyamoto , Akihiko Furukawa , Yasuo Inoue
发明人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Shigenobu Maeda , Shoichi Miyamoto , Akihiko Furukawa , Yasuo Inoue
IPC分类号： H01L21/764 , H01L21/265 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/8238 , H01L21/84 , H01L27/08 , H01L27/092 , H01L27/12 , H01L29/786 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/76297 , H01L21/764 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78606 , H01L29/78612 , H01L29/78633 , H01L29/78654 , H01L21/26586
摘要： In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an upper side portion of a semiconductor layer is rounded. Thereby, concentration of an electric field at the upper side portion of the semiconductor layer can be prevented. As a result, lowering of a threshold voltage of a parasitic transistor can be prevented, so that the parasitic transistor does not adversely affect subthreshold characteristics of a regular transistor. Owing to provision of a concavity of a U-shaped section, generation of etching residue can be prevented when etching a gate electrode for patterning the same. Thereby, a disadvantage is not caused in connection with the manufacturing process.
摘要翻译：在具有SOI结构的半导体器件及其制造方法中，可以防止寄生晶体管的影响，并且与制造过程相关的缺点不会产生。在该半导体器件中，半导体层的上侧部分是圆形的。由此，可以防止半导体层的上侧部分的电场集中。结果，可以防止寄生晶体管的阈值电压的降低，使得寄生晶体管不会对正常晶体管的亚阈值特性产生不利影响。通过设置U形截面的凹部，当蚀刻用于图案化的栅电极时，可以防止产生蚀刻残留。因此，不会在制造过程中引起缺点。

104. 发明授权

US5864063A Electrostatic capacity-type acceleration sensor 失效
标题翻译：静电容量型加速度传感器
公开(公告)号：US5864063A
公开(公告)日：1999-01-26
申请号：US806612
申请日：1997-02-26
申请人： Hiroshi Otani , Yasuo Yamaguchi
发明人： Hiroshi Otani , Yasuo Yamaguchi
IPC分类号： G01P1/02 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P1/023 , H01L2224/16 , H01L2224/48091 , H01L2224/48228 , H01L2224/73265
摘要： An enplane displacement, electrostatic capacity-type acceleration sensor includes a sensor unit made from a silicon substrate having a displaceable electrode and a fixed electrode, a pair of protective substrates bonded on opposing sides of the sensor unit, and an integrated circuit for detecting acceleration from the electrostatic capacity of the sensor unit. Sensor unit connection electrodes formed for connecting the sensor unit with the integrated circuit are disposed on the side of the sensor unit facing one of the protective substrates. Electrode holes are disposed in one protective substrate which are formed as through-holes in the substrate at positions corresponding to the connection electrodes. The integrated circuit is connected to the protective substrate in which the electrode holes are formed with the connections of the integrated circuit inserted through the electrode holes and electrically connected with the connection electrodes of the sensor unit.
摘要翻译：平面位移静电容量型加速度传感器包括由具有位移电极和固定电极的硅基板制成的传感器单元，粘合在传感器单元的相对侧上的一对保护基板，以及用于检测加速度的集成电路传感器单元的静电容量。形成为用于将传感器单元与集成电路连接的传感器单元连接电极设置在传感器单元面向保护基板之一的一侧。电极孔设置在一个保护基板中，该保护基板在对应于连接电极的位置处形成为基板中的通孔。集成电路与形成有电极孔的保护基板连接，该集成电路通过电极孔插入并与传感器单元的连接电极电连接。

105. 发明授权

US5861650A Semiconductor device comprising an FPGA 失效
标题翻译：包括FPGA的半导体器件
公开(公告)号：US5861650A
公开(公告)日：1999-01-19
申请号：US857130
申请日：1997-05-15
申请人： Shigenobu Maeda , Shigeto Maegawa , Yasuo Yamaguchi
发明人： Shigenobu Maeda , Shigeto Maegawa , Yasuo Yamaguchi
IPC分类号： H01L27/105 , H01L29/72
CPC分类号： H01L27/105
摘要： The semiconductor device includes a silicon substrate, field effect transistors, a flash memory and a separating portion. A plurality of field effect transistors are formed on semiconductor substrate. A flash memory is formed on semiconductor substrate. Separating portion includes a separation electrode. Separating portion electrically separates the plurality of field effect transistors from each other. Separating portion is formed insulated on silicon substrate. Flash memory includes a floating gate electrode and a control gate electrode. Floating gate electrode is formed insulated on silicon substrate. Control gate electrode is formed insulated on floating gate electrode. Separation electrode and floating gate electrode have approximately the same thickness.
摘要翻译：半导体器件包括硅衬底，场效应晶体管，闪存和分离部分。在半导体衬底上形成多个场效应晶体管。在半导体衬底上形成闪速存储器。分离部分包括分离电极。分离部分将多个场效应晶体管彼此电分离。分离部分在硅衬底上形成绝缘。闪存包括浮栅电极和控制栅电极。浮栅电极在硅衬底上形成绝缘。控制栅电极在浮栅电极上形成绝缘。分离电极和浮栅电极具有大致相同的厚度。

106. 发明授权

US5760520A Motor 失效
标题翻译：发动机
公开(公告)号：US5760520A
公开(公告)日：1998-06-02
申请号：US778711
申请日：1996-12-27
申请人： Masahiro Hasebe , Yasuo Yamaguchi
发明人： Masahiro Hasebe , Yasuo Yamaguchi
IPC分类号： H02K1/28 , H02K1/27 , H02K15/02 , H02K16/02 , H02K1/22 , H02K1/00 , H02K1/06
CPC分类号： H02K1/278 , H02K2201/06
摘要： A motor has a stator and a rotor that is formed of two rotor parts fitted on a rotor shaft in a fashion preventing the rotor from rotating relative to the rotor shaft. The rotor parts carry permanent magnets arranged with a fixed pitch angle over their outer peripheral faces. The rotor shaft has a single key for engaging with both an engagement groove of the first rotor and an engagement groove of the second rotor. The engagement groove of each steel plate forming the rotor parts is formed in a position shifted 1/2 of the skew angle from the pole center of a given one of the permanent magnets. The steel plates of the first rotor part and the steel plates of the second rotor part face in opposite directions when fitted to the key of the rotor shaft, thereby providing the predetermined skew angle between the two rotor parts.
摘要翻译：电动机具有定子和转子，其以防止转子相对于转子轴旋转的方式由安装在转子轴上的两个转子部分形成。转子部件携带在其外周面上以固定的俯仰角布置的永磁体。转子轴具有用于与第一转子的接合槽和第二转子的接合槽相接合的单个键。形成转子部件的每个钢板的接合槽形成为从给定的一个永磁体的磁极中心偏斜的偏斜角+ E，fra 1/2 + EE的位置。当安装到转子轴的钥匙上时，第一转子部件的钢板和第二转子部件的钢板在相反的方向上面对，从而在两个转子部件之间提供预定的倾斜角度。

107. 发明授权

US5604372A Semiconductor pressure sensor apparatus 失效
标题翻译：半导体压力传感器装置
公开(公告)号：US5604372A
公开(公告)日：1997-02-18
申请号：US521061
申请日：1995-08-29
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： G01L7/00 , B29C45/02 , B29C45/14 , B29C45/26 , G01L9/00 , H01L21/56 , H01L23/28 , H01L29/84 , H01L27/14 , H01L29/82
CPC分类号： G01L19/0084 , G01L19/147 , H01L2224/48091
摘要： A pressure sensor apparatus sealed by a resin in which resin flash in the resin sealing process is prevented from occurring, eliminating the necessity of removing such flash and achieving a pressure sensor apparatus which may be manufactured relatively easily at a lower price and with a higher reliability. A semiconductor pressure sensing element is mounted on a stem and signals lines for outputting an electrical signal indicating a pressure detected extend through the stem. An annular stopper for preventing resin flash resulting from the sealing resin flowing to an unwanted location surrounds both the semiconductor pressure sensing element and the signal lines.
摘要翻译：一种由树脂密封的压力传感器装置，其树脂密封过程中的树脂闪光发生，消除了消除这种闪光的必要性，并实现了可以以较低的价格和更高的可靠性相对容易地制造的压力传感器装置。半导体压力感测元件安装在杆上，并且信号线用于输出指示所检测到的压力的电信号延伸通过杆。用于防止由于密封树脂流到不需要的位置而导致的树脂闪光的环形塞子包围半导体压力感测元件和信号线。

108. 发明授权

US5355012A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5355012A
公开(公告)日：1994-10-11
申请号：US52858
申请日：1993-04-28
申请人： Yasuo Yamaguchi , Natsuo Ajika , Tsuyoshi Yamano
发明人： Yasuo Yamaguchi , Natsuo Ajika , Tsuyoshi Yamano
IPC分类号： H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/78 , H01L29/786 , H01L33/00
CPC分类号： H01L29/78612
摘要： A semiconductor device is an SOI type field effect transistor in which an active region is isolated and insulated by a transistor for isolation. A contact hole for isolation is formed in a gate dielectric thin film for isolation between a gate electrode of the transistor for isolation and a channel region below the gate electrode. In the semiconductor device thus structured, surplus carriers produced in a channel region below a transfer gate electrode are drawn through channel region and isolation contact hole into isolation gate electrode, thereby preventing such a disadvantageous phenomenon as a kink effect or the like due to a floating-substrate effect.
摘要翻译：半导体器件是SOI型场效应晶体管，其中有源区被隔离的晶体管隔离并绝缘。用于隔离的接触孔形成在用于隔离的晶体管的栅电极和栅电极下方的沟道区之间隔离的栅极电介质薄膜中。在这样构成的半导体装置中，在传输栅电极下方的沟道区域产生的多余载流子通过沟道区域和隔离接触孔被吸入隔离栅电极，从而防止由于浮动而引起的扭结效应等不利现象 - 底物效应。

109. 发明授权

US5040037A MOS type field effect transistor formed on a semiconductor layer on an insulator substrate 失效
标题翻译：形成在绝缘体基板上的半导体层上的MOS型场效应晶体管
公开(公告)号：US5040037A
公开(公告)日：1991-08-13
申请号：US448119
申请日：1989-12-11
申请人： Yasuo Yamaguchi , Shigeru Kusunoki
发明人： Yasuo Yamaguchi , Shigeru Kusunoki
IPC分类号： H01L21/84 , H01L21/336 , H01L27/12 , H01L29/08 , H01L29/32 , H01L29/417 , H01L29/78 , H01L29/786
CPC分类号： H01L29/32 , H01L29/0847 , H01L29/41733 , H01L29/78612 , H01L29/78621 , H01L29/78624
摘要： A SOI-MOSFET formed on a thin semiconductor layer (3) having a thickness not more than 1500.ANG. includes a charge carrier absorbing region (9a, 9b, 9c) contacting with at least a portion of the bottom of a channel region (6) of a first conductivity type and with at least a portion of the bottom of a source region (7, 7a) of a second conductivity type. The carrier absorbing region (9a, 9b, 9c) absorbs excess carriers of the first conductivity type contained in the channel region (6).

110. 发明授权

US08193631B2 Semiconductor device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08193631B2
公开(公告)日：2012-06-05
申请号：US12164464
申请日：2008-06-30
申请人： Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
发明人： Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
IPC分类号： H01L23/48
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01P1/023 , G01P15/0802 , G01P2015/0814
摘要： A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.
摘要翻译：第一互连沿着基板的凹槽和凹槽的底表面形成，并且具有第一厚度。第二互连电连接到第一互连并且具有大于第一厚度的第二厚度。加速度感测单元电连接到第二互连。密封单元具有与基板相对的部分，其间具有第一互连，并且包围基板上的第二互连和加速度感测单元。在密封单元上设置盖，以在由密封单元包围的基板的区域上形成空腔。由此，能够确保空腔的气密性，并且能够减少与加速度检测部连接的配线的电阻。

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