会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 103. 发明授权
    • Screening method and apparatus for use in intaglio printing
    • 用于凹版印刷的筛选方法和装置
    • US09182661B2
    • 2015-11-10
    • US13996967
    • 2011-12-24
    • Haifeng LiBin Yang
    • Haifeng LiBin Yang
    • H04N1/405G03F5/20
    • G03F5/20H04N1/4055
    • The present application provides a screen method for intaglio printing, comprising: dividing multiple classes of regions according to a brightness range; and generating screen dots with various screen patterns for the grouped classes of regions. The present application also provides a screen device for intaglio printing, comprising: a dividing module configured to group multiple classes of regions according to the brightness range; and a generating module configured to generate screen dots with various screen patterns for the grouped classes of regions. Since multiple kinds of screen patterns are applied in the technical solutions in present application, the problem, i.e., water ripple will occur in the prior art, may be addressed, so as to improve the quality of printing.
    • 本申请提供了一种用于凹版印刷的屏幕方法,包括:根据亮度范围划分多个类别的区域; 并且为分组的区域类别生成具有各种屏幕图案的屏幕点。 本申请还提供了一种用于凹版印刷的屏幕装置,包括:分割模块,被配置为根据亮度范围对多个类别的区域进行分组; 以及生成模块,被配置为生成用于所述分组的区域类别的各种屏幕图案的屏幕点。 由于在本申请中的技术方案中应用了多种屏幕图案,所以可以解决现有技术中出现的水波纹问题,以提高打印质量。
    • 106. 发明授权
    • Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material
    • 用于改进隔离区域和无缺陷活性半导体材料的半导体器件制造方法
    • US08987110B2
    • 2015-03-24
    • US13467730
    • 2012-05-09
    • Man Fai NgBin Yang
    • Man Fai NgBin Yang
    • H01L21/762H01L21/84H01L21/8238
    • H01L21/76224H01L21/76283H01L21/823807H01L21/823878H01L21/84
    • A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.
    • 提供了半导体器件结构的制造方法。 器件结构具有硅层和覆盖硅层的二氧化硅层,并且该方法开始于通过去除一部分二氧化硅和一部分硅来形成隔离凹槽。 隔离凹部填充有应力诱导性氮化硅,然后去除二氧化硅,使得应力诱导性氮化硅突出于硅上方。 接下来,暴露的硅被热氧化以形成覆盖在硅上的二氧化硅硬掩模材料。 此后,去除二氧化硅硬掩模材料的第一部分以露出硅的可接近表面,同时留下二氧化硅硬掩模材料的第二部分完好无损。 接下来,从硅的可接近表面外延生长硅锗。
    • 110. 发明授权
    • Metal gate fill by optimizing etch in sacrificial gate profile
    • 通过优化牺牲栅极剖面中的蚀刻来进行金属栅极填充
    • US08765537B2
    • 2014-07-01
    • US13606035
    • 2012-09-07
    • Man Fai NgBin Yang
    • Man Fai NgBin Yang
    • H01L21/338
    • H01L21/28114H01L29/42376H01L29/66545H01L29/6659H01L29/7833
    • A high-k metal gate electrode is formed with reduced gate voids. An embodiment includes forming a replaceable gate electrode, for example of amorphous silicon, having a top surface and a bottom surface, the top surface being larger than the bottom surface, removing the replaceable gate electrode, forming a cavity having a top opening larger than a bottom opening, and filling the cavity with metal. The larger top surface may be formed by etching the bottom portion of the amorphous silicon at greater temperature than the top portion, or by doping the top and bottom portions of the amorphous silicon differently such that the bottom has a greater lateral etch rate than the top.
    • 形成具有减小的栅极空隙的高k金属栅电极。 一个实施例包括形成可替换的栅电极,例如具有顶表面和底表面的非晶硅,顶表面大于底表面,去除可更换的栅电极,形成具有大于 底部开口,并用金属填充空腔。 可以通过在比顶部更高的温度下蚀刻非晶硅的底部,或者通过不同地掺杂非晶硅的顶部和底部来形成较大的顶表面,使得底部具有比顶部更大的侧向蚀刻速率 。