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101. 发明授权

US07719162B2 Electrostatic actuator and controller with PWM driving 有权
标题翻译：带PWM驱动的静电执行器和控制器
公开(公告)号：US07719162B2
公开(公告)日：2010-05-18
申请号：US11397717
申请日：2006-04-05
申请人： Dong-ki Min , Jin-ho Lee , Seung-bum Hong
发明人： Dong-ki Min , Jin-ho Lee , Seung-bum Hong
IPC分类号： H02N1/00 , G02B26/08
CPC分类号： H02N1/008
摘要： An electrostatic actuator and a method of driving the same are provided. The actuator controls the displacement of a target object by adjusting a voltage between fixed comb electrodes and a moving comb electrode. The actuator includes an actuator control signal generator generating an actuator control signal by pulse-width modulating an actuator driving signal and a carrier signal; and an actuator unit including the fixed comb electrodes and the moving comb electrode and adjusting the voltage according to the actuator control signal. Accordingly, the displacement can be easily controlled using the pulse-width-modulated actuator driving signal even when both the voltage of the actuator driving signal and the frequency of the carrier signal are high.
摘要翻译：提供静电致动器及其驱动方法。致动器通过调节固定梳状电极和移动梳状电极之间的电压来控制目标物体的位移。致动器包括致动器控制信号发生器，其通过脉冲宽度调制致动器驱动信号和载波信号来产生致动器控制信号; 以及致动器单元，其包括固定梳状电极和移动梳状电极，并根据致动器控制信号调节电压。因此，即使在致动器驱动信号的电压和载波信号的频率都高的情况下，也可以容易地利用脉冲宽度调制的致动器驱动信号控制位移。

102. 发明授权

US07605014B2 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US07605014B2
公开(公告)日：2009-10-20
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

103. 发明授权

US07528371B2 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US07528371B2
公开(公告)日：2009-05-05
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G01N23/00
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

104. 发明授权

US07502305B2 Data storage device and method of tracking data stored in the same 失效
标题翻译：数据存储装置和跟踪数据的方法相同
公开(公告)号：US07502305B2
公开(公告)日：2009-03-10
申请号：US10994281
申请日：2004-11-23
申请人： Dong-ki Min , Seung-bum Hong
发明人： Dong-ki Min , Seung-bum Hong
IPC分类号： G11B9/00
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1418 , G11B9/1454
摘要： Provided are a data storage device and a method of tracking data stored in the data storage device. The device includes a data storage medium on which data can be recorded and erased, a plurality of probes for scanning the data storage medium to detect data, a scanner for driving the data storage medium or the probes, and a controller for applying a control signal to the scanner. The method includes (a) oscillating the probe or the data storage medium; (b) detecting an off-track error of the probe on the data storage medium by the oscillation; and (c) adjusting a scanning position of the probe on the data storage medium to compensate for the off-track error.
摘要翻译：提供了一种数据存储装置和跟踪存储在数据存储装置中的数据的方法。该装置包括可以记录和擦除数据的数据存储介质，用于扫描数据存储介质以检测数据的多个探针，用于驱动数据存储介质或探针的扫描仪，以及用于施加控制信号的控制器到扫描仪该方法包括（a）振荡探针或数据存储介质; （b）通过所述振荡检测所述数据存储介质上的所述探针的偏离轨道误差; 以及（c）调整数据存储介质上的探针的扫描位置以补偿偏离磁道误差。

105. 发明申请

US20080225678A1 FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME 失效
标题翻译：电磁记录介质及其相关的书写方法
公开(公告)号：US20080225678A1
公开(公告)日：2008-09-18
申请号：US12128788
申请日：2008-05-29
申请人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

106. 发明授权

US07419843B2 Method of manufacturing semiconductor probe having resistive tip 失效
标题翻译：制造具有电阻尖端的半导体探针的方法
公开(公告)号：US07419843B2
公开(公告)日：2008-09-02
申请号：US11212605
申请日：2005-08-29
申请人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
发明人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G01Q70/10 , G01Q70/16
摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
摘要翻译：一种制造具有电阻尖端的半导体探针的方法。该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

107. 发明授权

US07406020B2 Method of writing data on a storage device using a probe technique 有权
标题翻译：使用探针技术在存储设备上写入数据的方法
公开(公告)号：US07406020B2
公开(公告)日：2008-07-29
申请号：US10934561
申请日：2004-09-07
申请人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
发明人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

108. 发明申请

US20080116926A1 SEMICONDUCTOR PROBE HAVING RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有电阻提示的半导体探针及其制造方法
公开(公告)号：US20080116926A1
公开(公告)日：2008-05-22
申请号：US11861417
申请日：2007-09-26
申请人： Hyoung-soo KO , Ju-hwan Jung , Seung-bum Hong , Chul-min Park
发明人： Hyoung-soo KO , Ju-hwan Jung , Seung-bum Hong , Chul-min Park
IPC分类号： G01R31/02 , H01C17/00
CPC分类号： G01Q60/30 , G01Q80/00 , H01C13/00 , Y10T29/49082
摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.
摘要翻译：提供了具有电阻尖端的半导体探针和制造半导体探针的方法。半导体探针包括掺杂有第一杂质的电阻尖端，并且其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

109. 发明授权

US07236327B2 Information storage medium and apparatus adopting the same 失效
标题翻译：信息存储介质及其采用的装置
公开(公告)号：US07236327B2
公开(公告)日：2007-06-26
申请号：US11023468
申请日：2004-12-29
申请人： Sung-dong Kim , Seung-bum Hong
发明人： Sung-dong Kim , Seung-bum Hong
IPC分类号： G11B5/74 , G11B5/82
CPC分类号： G11B5/66 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , G11B9/04 , G11B9/14 , G11B9/1409 , G11B9/1472 , G11B2005/0002 , G11B2005/0005 , G11C11/15 , Y10T428/12465
摘要： An information storage medium and an apparatus adopting the information storage medium. The information storage medium includes: a substrate; a lower magnetic layer formed on the substrate; and an upper magnetic layer, the upper magnetic layer includes an alumina layer having cavities formed on the lower magnetic layer and a magnetic material that is formed in the cavities of the alumina layer, which magnetic material contacts the lower magnetic layer.
摘要翻译：一种信息存储介质和采用该信息存储介质的装置。信息存储介质包括：基板; 形成在所述基板上的下磁性层; 和上磁性层，上磁性层包括形成在下磁性层上的空腔的氧化铝层和形成在氧化铝层的空腔中的磁性材料，该磁性材料与下部磁性层接触。

110. 发明申请

US20070137780A1 Method of fabricating micro actuator having media stage 失效
标题翻译：具有介质载物台的微型致动器的制造方法
公开(公告)号：US20070137780A1
公开(公告)日：2007-06-21
申请号：US11595876
申请日：2006-11-13
申请人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
发明人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
IPC分类号： B32B37/00
CPC分类号： H02K41/0354 , B81B3/0062 , B81B2201/038 , B81B2201/11 , B81B2203/051 , B82Y10/00 , G11B9/1436 , H02K2201/18
摘要： A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
摘要翻译：提供了一种制造微型致动器的方法，包括：介质台，其具有介质装载表面和用于驱动介质载物台的线圈，其形成在介质载台的相对表面上至介质装载表面。该方法包括在第一基板的第一表面上形成凹槽，在第二基板的第一表面上形成线圈，将第一基板的第一表面接合到第二基板的第一表面，并且形成介质装载表面在第二基板的与第二基板的第一表面相对的第二表面上。

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