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    • 101. 发明授权
    • High speed implanted VCSEL
    • 高速植入VCSEL
    • US06906353B1
    • 2005-06-14
    • US10715165
    • 2003-11-17
    • Chan-Long ShiehHsing-Chung Lee
    • Chan-Long ShiehHsing-Chung Lee
    • H01L33/00H01S3/08H01S5/183H01S5/20
    • H01S5/18308H01S5/18341H01S5/18369H01S5/2063H01S5/3095H01S2301/166
    • A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector.
    • 垂直腔表面发射激光器包括形成第一分布布拉格反射器的第一反射镜区域,第一包层区域,有源区域,包括定位成限定电流路径的高电阻注入区域的第二包层区域,第二镜像区域, 和电流扩展区域。 第一电触头位于电流扩展区上,并且第二电触点被定位成使电流通过电流路径与第一电触头相通。 电流扩散区域和第二反射镜区域协作以在电流路径中产生基本均匀的电流分布。 第三反射镜区域位于电流扩展区域上。 第二和第三镜面区域配合以提供完整的布拉格反射器。
    • 106. 发明授权
    • Electric field amplified oligonucleotide ligase analysis
    • 电场扩增寡核苷酸连接酶分析
    • US6030781A
    • 2000-02-29
    • US956674
    • 1997-10-23
    • Chan-Long Shieh
    • Chan-Long Shieh
    • C12Q1/68C12P19/34
    • C12Q1/6862C12Q2565/607
    • An electric field amplified oligonucleotide ligase analysis includes combining a plurality of oligonucleotide probes carried on a support at a binding site with a solution including a target molecule, a plurality of oligonucleotide segments including a marker and ligase. A first electric field surrounding the plurality of oligonucleotide probes is generated to attract the target molecule to a first of the plurality of oligonucleotide probes to which it hybridizes. A first of the plurality of oligonucleotide segments also hybridizes with the target molecule and covalently bonds to the first oligonucleotide probe due to the presence of ligase in the solution. The target molecule is separated by generating a second electric field surrounding the plurality of oligonucleotide probes. The generation of the electric fields are alternately repeated to amplify the hybridization signal.
    • 电场扩增寡核苷酸连接酶分析包括将携带在结合位点的载体上的多个寡核苷酸探针与包含靶分子,多个包含标记物和连接酶的寡核苷酸区段的溶液组合。 产生围绕多个寡核苷酸探针的第一电场,以将靶分子吸引到与其杂交的多个寡核苷酸探针中的第一个。 多个寡核苷酸片段中的第一个也与靶分子杂交,并且由于溶液中存在连接酶而与第一寡核苷酸探针共价结合。 通过产生围绕多个寡核苷酸探针的第二电场来分离靶分子。 交替重复电场的产生以放大杂交信号。
    • 108. 发明授权
    • LED display packaging with substrate removal and method of fabrication
    • LED显示包装与基板去除及其制造方法
    • US5940683A
    • 1999-08-17
    • US588470
    • 1996-01-18
    • Paige M. HolmChan-Long ShiehCurtis D. Moyer
    • Paige M. HolmChan-Long ShiehCurtis D. Moyer
    • H01L21/60G09F9/33H01L25/16H01L27/15H01L33/00H01L21/00
    • H01L25/167G09F9/3026H01L25/162H01L27/156H01L2924/0002H01L33/0079
    • A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a LED array display chip, fabricated of an array of LEDs, formed on a substrate, having connection pads positioned about the perimeter of the LED array display chip, a separate silicon driver chip having connection pads routed to an uppermost surface, positioned to cooperatively engage those of the display chip when properly registered and interconnected using wafer level processing technology. The display chip being flip chip mounted to the driver chip and having a layer of interchip bonding dielectric positioned between the space defined by the display chip and the driver chip. The LED display and driver chip package subsequently having selectively removed the substrate onto which the LED array was initially formed, thereby exposing the connection pads of the display chip and a remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer. The light emitted from the LED display chip, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the display chip.
    • 一种制造发光二极管(LED)显示封装的发光二极管显示封装和方法,所述发光二极管(LED)显示封装包括形成在基板上的由阵列LED制成的LED阵列显示芯片,所述LED阵列显示芯片具有围绕所述LED阵列显示器周边定位的连接焊盘 芯片,具有连接到最上表面的连接焊盘的单独的硅驱动器芯片,定位成当使用晶片级处理技术正确地注册和互连时协作地接合显示芯片的那些。 显示芯片被倒装芯片安装到驱动器芯片上,并且具有位于由显示芯片和驱动器芯片限定的空间之间的芯片间接合电介质层。 LED显示器和驱动器芯片封装随后选择性地去除了最初形成LED阵列的衬底,从而暴露显示芯片的连接焊盘和剩余的铟 - 镓 - 铝 - 磷化物(InGaAlP)外延层。 从LED显示芯片发出的光通过显示芯片的剩余的铟镓铝磷化物(InGaAlP)外延层发射。