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    • 1. 发明授权
    • LED display packaging with substrate removal and method of fabrication
    • LED显示包装与基板去除及其制造方法
    • US5940683A
    • 1999-08-17
    • US588470
    • 1996-01-18
    • Paige M. HolmChan-Long ShiehCurtis D. Moyer
    • Paige M. HolmChan-Long ShiehCurtis D. Moyer
    • H01L21/60G09F9/33H01L25/16H01L27/15H01L33/00H01L21/00
    • H01L25/167G09F9/3026H01L25/162H01L27/156H01L2924/0002H01L33/0079
    • A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a LED array display chip, fabricated of an array of LEDs, formed on a substrate, having connection pads positioned about the perimeter of the LED array display chip, a separate silicon driver chip having connection pads routed to an uppermost surface, positioned to cooperatively engage those of the display chip when properly registered and interconnected using wafer level processing technology. The display chip being flip chip mounted to the driver chip and having a layer of interchip bonding dielectric positioned between the space defined by the display chip and the driver chip. The LED display and driver chip package subsequently having selectively removed the substrate onto which the LED array was initially formed, thereby exposing the connection pads of the display chip and a remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer. The light emitted from the LED display chip, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the display chip.
    • 一种制造发光二极管(LED)显示封装的发光二极管显示封装和方法,所述发光二极管(LED)显示封装包括形成在基板上的由阵列LED制成的LED阵列显示芯片,所述LED阵列显示芯片具有围绕所述LED阵列显示器周边定位的连接焊盘 芯片,具有连接到最上表面的连接焊盘的单独的硅驱动器芯片,定位成当使用晶片级处理技术正确地注册和互连时协作地接合显示芯片的那些。 显示芯片被倒装芯片安装到驱动器芯片上,并且具有位于由显示芯片和驱动器芯片限定的空间之间的芯片间接合电介质层。 LED显示器和驱动器芯片封装随后选择性地去除了最初形成LED阵列的衬底,从而暴露显示芯片的连接焊盘和剩余的铟 - 镓 - 铝 - 磷化物(InGaAlP)外延层。 从LED显示芯片发出的光通过显示芯片的剩余的铟镓铝磷化物(InGaAlP)外延层发射。
    • 2. 发明授权
    • LED display packaging with substrate removal and method of fabrication
    • LED显示包装与基板去除及其制造方法
    • US5780321A
    • 1998-07-14
    • US699263
    • 1996-08-19
    • Chan-Long ShiehHsing-Chung LeePaige M. Holm
    • Chan-Long ShiehHsing-Chung LeePaige M. Holm
    • H01L21/60G09F9/33H01L25/16H01L27/15H01L33/00H01L21/00
    • H01L27/156H01L25/162H01L25/167H01L2924/0002
    • A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
    • 一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管(LED)显示器封装的方法,所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘 ,具有连接到最上表面的连接焊盘的单独的硅驱动器装置,其被定位成在正确地注册时协同地与LED器件的那些耦合,使用标准C5 DCA将LED装置倒装芯片凸块结合到驱动器装置,底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。 从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物(InGaAlP)外延层发射。
    • 3. 发明授权
    • Light emitting diode display package
    • 发光二极管显示封装
    • US5621225A
    • 1997-04-15
    • US599434
    • 1996-01-18
    • Chan-Long ShiehHsing-Chung LeePaige M. Holm
    • Chan-Long ShiehHsing-Chung LeePaige M. Holm
    • H01L21/60G09F9/33H01L25/16H01L27/15H01L33/00H01L23/48
    • H01L27/156H01L25/162H01L25/167H01L2924/0002
    • A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
    • 一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管(LED)显示器封装的方法,所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘 ,具有连接到最上表面的连接焊盘的单独的硅驱动器器件,其被定位成在正确地注册时协同地与LED器件的LED器件匹配,使用标准C5 DCA将LED器件倒装芯片凸块结合到驱动器器件,底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。 从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物(InGaAlP)外延层发射。
    • 7. 发明授权
    • Integrated multi-wavelength Fabry-Perot filter and method of fabrication
    • 集成多波长法布里 - 珀罗滤波器及其制作方法
    • US07378346B2
    • 2008-05-27
    • US11387468
    • 2006-03-22
    • Ngoc V. LeJeffrey H. BakerDiana J. ConveyPaige M. HolmSteven M. Smith
    • Ngoc V. LeJeffrey H. BakerDiana J. ConveyPaige M. HolmSteven M. Smith
    • H01L21/302H01L21/461
    • G01J3/26G02B5/284
    • A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (10). The method comprises forming a first mirror (16) over the substrate (10). A plurality of etalon material layers (32, 34, 36, 38) are formed over the mirror (16), and a plurality of etch stop layers (42, 44, 46) are formed, one each between adjacent etalon material layers (32, 34, 36, 38). A photoresist is patterned to create an opening (54) over the top etalon material layer (38) and an etch (56) is performed down to the top etch stop layer (46). An oxygen plasma (58) may be applied to convert the etch stop layer (46) within the opening (54) to silicon dioxide (57). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (82, 84, 86, 88). A second mirror (72) is then formed on each of the levels (82, 84, 86, 88).
    • 提供了一种用于在衬底(10)上形成单片集成滤光器(例如法布里 - 珀罗滤光片)的方法。 该方法包括在衬底(10)上形成第一反射镜(16)。 多个标准具材料层(32,34,36,38)形成在反射镜(16)上方,并且形成多个蚀刻停止层(42,44,46),每个蚀刻停止层之间相邻的标准具材料层(32 ,34,36,38)。 图案化光致抗蚀剂以在顶部标准具材料层(38)上方形成开口(54),并且向下蚀刻停止层(46)进行蚀刻(56)。 可以施加氧等离子体(58)以将开口(54)内的蚀刻停止层(46)转化为二氧化硅(57)。 可以根据需要重复光刻胶图案化,蚀刻和施加氧等离子体以获得所需数量的水平(82,84,86,88)。 然后在每个级(82,84,86,88)上形成第二反射镜(72)。
    • 8. 发明授权
    • Vertically integrated photosensor for CMOS imagers
    • 用于CMOS成像器的垂直集成光电传感器
    • US06984816B2
    • 2006-01-10
    • US10641216
    • 2003-08-13
    • Paige M. HolmJon J. Candelaria
    • Paige M. HolmJon J. Candelaria
    • H01J40/14
    • H01L27/14601H01L27/14636H01L27/14643
    • An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated photosensing components that may be readily incorporated with existing technologies for the improvement of CMOS imaging, device package form factors, weights and/or other manufacturing, device or material performance metrics.
    • 公开了一种用于提供适合于在CMOS成像应用中使用的垂直集成光敏元件的示例性系统和方法,其特别包括:经处理的CMOS层(420); 以及在垂直集成的光学有源层(320,350)中制造的光敏元件(380),其中光学活性层(320,350)被结合到CMOS层(420)和光学活性层(320,350) 位于CMOS层(420)的金属化表面(405)附近。 公开的特征和规格可以被不同地控制,配置,适配或以其他方式任意地修改,以进一步改善或以其它方式优化光敏性能或其它材料特性。 本发明的示例性实施例代表性地提供了可以容易地与现有技术结合以用于改进CMOS成像,设备封装外形,重量和/或其它制造,器件或材料性能度量的集成光敏元件。
    • 10. 发明授权
    • Method of manufacturing a distributed drive optoelectronic integrated
circuit
    • 制造分布式驱动光电集成电路的方法
    • US5221633A
    • 1993-06-22
    • US756734
    • 1991-09-09
    • Paige M. HolmGeorge W. Rhyne
    • Paige M. HolmGeorge W. Rhyne
    • H01L21/8252H01L27/15
    • H01L21/8252H01L27/15Y10S148/072
    • A method of manufacturing a transmitter optoelectronic integrated circuit (10) which comprises a double heterostructure optical emission device (11) and drive circuitry (16). The optical emission device (11) comprises a plurality of optical emission loci (21) distributed throughout an active layer (12) of the optical emission device (11). Drive circuit (16) comprises a plurality of first portions (17) and a second portion (18) wherein the plurality of first portions (17) are above the plurality of emission loci (21). Second portion (18) is integrated in a lateral orientation with respect to the plurality of first portions (17). The chemical composition of the plurality of first portions (17) are such that they are nonabsorbing to optical emissions from the optical emission device (11).
    • 一种制造发射器光电集成电路(10)的方法,其包括双异质结构光发射装置(11)和驱动电路(16)。 光发射装置(11)包括分布在光发射装置(11)的有源层(12)的多个光发射轨道(21)。 驱动电路(16)包括多个第一部分(17)和第二部分(18),其中多个第一部分(17)在多个发射轨迹(21)之上。 第二部分(18)相对于多个第一部分(17)以横向方向被一体化。 多个第一部分(17)的化学成分使得它们不吸收来自光发射装置(11)的光发射。