专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US6096966A Tubular thermoelectric module 失效
标题翻译：管状热电模块
公开(公告)号：US6096966A
公开(公告)日：2000-08-01
申请号：US900419
申请日：1997-07-25
申请人： Seiji Nishimoto , Taku Kitayama , Yoshikazu Fujisawa
发明人： Seiji Nishimoto , Taku Kitayama , Yoshikazu Fujisawa
IPC分类号： H02N11/00 , H01L35/22 , H01L35/32 , H01L35/30
CPC分类号： H01L35/22 , H01L35/32
摘要： A thermoelectric module having a high thermoelectric performance is shown and described. A flat thermoelectric module comprises a multi-layered body provided with a thermoelectric material layer having output take-out faces on two opposite sides, an electrode layer present on each output take-out faces, a metallic layer present on each electrode layer, and an electrical insulating outer layer covering the surface of the body. Adjacent layers are pressure-welded to be in close contact with each other. No solder is used in the construction of a module in accordance with the present invention, and it is therefore possible to improve the thermoelectric performance of the module by raising the operating temperature without being restricted by the melting point of solder.
摘要翻译：示出并描述了具有高热电性能的热电模块。平板热电模块包括：多层体，其具有在两相对侧上具有输出取出面的热电材料层，存在于每个输出取出面的电极层，存在于每个电极层上的金属层，以及覆盖身体表面的电绝缘外层。相邻的层被压焊以彼此紧密接触。在根据本发明的模块的构造中不使用焊料，因此可以通过提高工作温度而不受焊料的熔点的限制来提高模块的热电性能。

92. 发明授权

US5886292A Thermoelectric material 失效
标题翻译：热电材料
公开(公告)号：US5886292A
公开(公告)日：1999-03-23
申请号：US895515
申请日：1997-07-16
申请人： Seiji Nishimoto
发明人： Seiji Nishimoto
IPC分类号： H01L35/14 , H01L35/16 , H01L35/22 , H01L35/26 , H01L35/28 , C04B35/00 , H01L35/20
CPC分类号： H01L35/16 , H01L35/22
摘要： A thermoelectric material having excellent thermoelectric performance is shown and described. A thermoelectric material is formed having a plurality of conductive layers and a plurality of barrier layers that are alternatingly formed one upon the other such that one conductive layer is sandwiched by two barrier layers. The conductive layers are composed of a first semiconductor only, and the two barrier layers located on the outermost sides of the material each have a main layer made of a second semiconductor only and a boundary layer made of the first and second semiconductors. A plurality of barrier layers positioned in between the conductive layers each have a main layer and two boundary layers provided on opposite sides of the main layer. The thickness t.sub.1 of the conductive layer and the thickness t.sub.2 of the barrier layer have a relationship of 2t.sub.1 .ltoreq.t.sub.2 .ltoreq.50t.sub.1.
摘要翻译：示出并描述了具有优异的热电性能的热电材料。形成具有多个导电层和多个阻挡层的热电材料，所述多个导电层和多个阻挡层彼此交替地形成，使得一个导电层被两个阻挡层夹在中间。导电层仅由第一半导体构成，位于材料的最外侧的两个阻挡层各自具有仅由第二半导体构成的主层和由第一和第二半导体构成的边界层。位于导电层之间的多个阻挡层各自具有设置在主层的相对侧上的主层和两个边界层。导电层的厚度t1和阻挡层的厚度t2的关系为2t1≤t2≤50t1。

93. 发明授权

US5708233A Thermoelectric semiconductor material 失效
标题翻译：热电半导体材料
公开(公告)号：US5708233A
公开(公告)日：1998-01-13
申请号：US688014
申请日：1996-07-29
申请人： Yasuo Ochi , Kazuo Ohara
发明人： Yasuo Ochi , Kazuo Ohara
IPC分类号： H01L35/22
CPC分类号： H01L35/22
摘要： A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.
摘要翻译：热电半导体材料用于热电转换装置中的热电转换。所述材料包括具有正常尖晶石晶体结构和反尖晶石晶体结构之一的双氧化物，所述双氧化物包含由MIn 2 O 4表示的组成，其中M表示可以变为二价离子的金属元素。

94. 发明授权

US5665176A n-Type thermoelectric materials 失效
标题翻译： n型热电材料
公开(公告)号：US5665176A
公开(公告)日：1997-09-09
申请号：US277820
申请日：1994-07-20
申请人： Kazuhiko Shinohara , Masakazu Kobayashi , Keiko Ikoma , Fumio Munakata
发明人： Kazuhiko Shinohara , Masakazu Kobayashi , Keiko Ikoma , Fumio Munakata
IPC分类号： H01L35/14 , H01L35/22 , H01L29/00
CPC分类号： H01L35/22 , Y10S257/93
摘要： An n-type thermoelectric material composed mainly of an iron-silicite compound represented by a chemical formula of FeSi.sub.2+z in which -0.1
摘要翻译：主要由化学式FeSi2 + z表示的铁 - 硅酸盐化合物组成的n型热电材料，其中-0.1

95. 发明授权

US4849033A Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency 失效
标题翻译：退火III-V族复合掺杂硅 - 锗合金，提高热电转换效率
公开(公告)号：US4849033A
公开(公告)日：1989-07-18
申请号：US184234
申请日：1988-04-21
申请人： Jan W. Vander Sande , Charles Wood , Susan L. Draper
发明人： Jan W. Vander Sande , Charles Wood , Susan L. Draper
IPC分类号： H01L35/22
CPC分类号： H01L35/22 , Y10T428/12674
摘要： The thermoelectric conversion efficiency of a GaP dope SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200.degree. C. to 1275.degree. C. in air to form large grains having a size over 50 .mu.m and to form a Ge-Ga-P rich phase and a silicon rich phase containing SiP and SiO.sub.2 particles.
摘要翻译： GaP涂料SiGe合金的热电转换效率通过在合金的熔点以上的温度下退火合金，优选在空气中从1200℃到1275℃逐步退火，从而提高约30％，形成具有尺寸超过50微米，并形成含有Ge-Ga-P的富相和含有SiP和SiO2颗粒的富硅相。

96. 发明授权

US4539054A Amorphous film of transition element-silicon compound 失效
标题翻译：过渡元素 - 硅化合物的非晶膜
公开(公告)号：US4539054A
公开(公告)日：1985-09-03
申请号：US490535
申请日：1983-05-02
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
IPC分类号： C01B33/06 , C22C45/00 , C23C14/06 , C23C14/14 , C23C14/24 , H01L21/203 , H01L35/00 , H01L35/22 , C22C28/00
CPC分类号： C23C14/14 , C22C45/00 , H01L35/22
摘要： An amorphous film formed of a transition element-silicon compound which has excellent electric and optical characteristics is disclosed. The compound is amorphous and has a Si content of 60-85 at. %.
摘要翻译：公开了一种由具有优异的电学和光学特性的过渡元素 - 硅化合物形成的非晶膜。该化合物是无定形的，Si含量为60-85英寸。％。

97. 发明授权

US4500742A Iron silicide thermoelectric conversion element 失效
标题翻译：铁硅化物热电转换元件
公开(公告)号：US4500742A
公开(公告)日：1985-02-19
申请号：US574145
申请日：1984-01-26
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
IPC分类号： H01L35/14 , C01B33/06 , H01L21/203 , H01L35/08 , H01L35/22 , H01L35/34 , H01L35/00 , H01L37/00
CPC分类号： H01L35/34 , H01L35/08 , H01L35/22 , Y02P20/129
摘要： An iron silicide thermoelectric conversion element wherein a part of one of components of the silicide is substituted by oxygen atom to form either Si-O bond or Fe-O bond in a matrix of the compound to provide either p-type conductivity or n-type conductivity as desired.
摘要翻译：一种硅化铁热电转换元件，其中硅化物中的一种组分的一部分被氧原子取代以在化合物的基质中形成Si-O键或Fe-O键，以提供p型导电性或n型电导率。

98. 发明授权

US4362023A Thermoelectric refrigerator having improved temperature stabilization means 失效
标题翻译：具有改善的温度稳定装置的热电冰箱
公开(公告)号：US4362023A
公开(公告)日：1982-12-07
申请号：US287965
申请日：1981-07-29
申请人： Charles M. Falco
发明人： Charles M. Falco
IPC分类号： F25B21/02 , G05D23/20 , H01L35/22 , H01L35/24
CPC分类号： H01L35/22 , F25B21/02 , G05D23/1919 , G05D23/20 , H01L35/24 , Y10S505/891
摘要： A control system for thermoelectric refrigerators is disclosed. The thermoelectric refrigerator includes at least one thermoelectric element that undergoes a first order change at a predetermined critical temperature. The element functions as a thermoelectric refrigerator element above the critical temperature, but discontinuously ceases to function as a thermoelectric refrigerator element below the critical temperature. One example of such an arrangement includes thermoelectric refrigerator elements which are superconductors. The transition temperature of one of the superconductor elements is selected as the temperature control point of the refrigerator. When the refrigerator attempts to cool below the point, the metals become superconductors losing their ability to perform as a thermoelectric refrigerator. An extremely accurate, first-order control is realized.
摘要翻译：公开了一种用于热电冰箱的控制系统。热电冰箱包括在预定临界温度下经历一阶变化的至少一个热电元件。该元件作为高于临界温度的热电致冷器元件起作用，但不连续地停止作为低于临界温度的热电致冷元件的功能。这种布置的一个示例包括作为超导体的热电致冷器元件。选择超导体元件之一的转变温度作为冰箱的温度控制点。当冰箱尝试冷却到点以下时，金属变成超导体失去作为热电冰箱的能力。实现了非常准确的一级控制。

99. 发明授权

US4178415A Modified amorphous semiconductors and method of making the same 失效
标题翻译：改性非晶半导体及其制造方法
公开(公告)号：US4178415A
公开(公告)日：1979-12-11
申请号：US888915
申请日：1978-03-22
申请人： Stanford R. Ovshinsky , Krishna Sapru
发明人： Stanford R. Ovshinsky , Krishna Sapru
IPC分类号： H01L29/73 , H01L21/203 , H01L21/205 , H01L21/331 , H01L29/04 , H01L29/167 , H01L29/30 , H01L31/04 , H01L35/14 , H01L35/22 , H01B1/02
CPC分类号： H01L21/02532 , H01L21/02631 , H01L29/04 , H01L29/167 , H01L35/22
摘要： An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.
摘要翻译：非晶半导体膜包括诸如硅或硅和氧的非晶半导体主体基质，以及包含碱金属（例如锂）的改性材料，其通过其共沉积合并在其中。掺入无定形主体基质中的改性剂材料控制膜的导电性和与其相关的其它现象。

100. 发明授权

US4177474A High temperature amorphous semiconductor member and method of making the same 失效
标题翻译：高温非晶半导体元件及其制造方法
公开(公告)号：US4177474A
公开(公告)日：1979-12-04
申请号：US841369
申请日：1977-10-12
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L29/04 , H01L31/0376 , H01L31/07 , H01L35/22 , H01L45/00
CPC分类号： H01L35/22 , H01L29/04 , H01L31/0376 , H01L31/07 , Y02E10/50 , Y10S257/93
摘要： An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configuration which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy. It also includes a modifier material added to the amorphous host matrix, such as a transition metal or rare earth element, having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above. The amorphous semiconductor member may also comprise an amorphous host matrix formed from boron, carbon, silicon or germanium having a modifier material of boron or carbon added thereto. The forming of the amorphous host matrix and the adding of the modifier material is preferably done by cosputtering or the like.
摘要翻译：能够耐受高温且具有良好韧性的非晶半导体部件包括非晶半导体材料，其包含多个元素的组合物，其中至少一个是包含硼，碳，氮或氧的低原子量元素，形成在具有结构构造的固体无定形主体基质中，所述结构构型具有局部而不是长范围的顺序，以及提供能隙和电活化能的电子构型。它还包括添加到非晶主体基质（例如过渡金属或稀土元素）中的改性剂材料，其具有与非晶主体基质相互作用并且在能隙中形成电子状态的轨道，其基本上修饰了非晶态主体的电子结构基质在室温及以上。非晶半导体部件还可以包括由硼，碳，硅或锗形成的无定形主体基体，其具有添加硼或碳的改性材料。非晶主体基体的形成和改性材料的添加优选通过溅射等进行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式