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91. 发明授权

US08018578B2 Pellicle, lithographic apparatus and device manufacturing method 有权
标题翻译：薄膜，光刻设备和器件制造方法
公开(公告)号：US08018578B2
公开(公告)日：2011-09-13
申请号：US11785744
申请日：2007-04-19
申请人： Vadim Yevgenyevich Banine , Arno Jan Bleeker
发明人： Vadim Yevgenyevich Banine , Arno Jan Bleeker
IPC分类号： F21V9/04 , F21V9/06 , G02B5/20 , G03B27/32 , G03B27/42 , G03B27/52 , G03B27/54
CPC分类号： G03F7/70958 , G03F1/62 , G03F7/70191 , G03F7/70916 , G03F7/70983
摘要： A pellicle for integrated circuit equipment operating in an EUV range includes a multi-layered structure of alternating layers. The pellicle is constructed and arranged to reflect or absorb undesired radiation and to intercept debris to enhance the spectral purity of a radiation beam.
摘要翻译：用于在EUV范围内工作的集成电路设备的防护薄膜组件包括交替层的多层结构。防护薄膜组件被构造和布置成反射或吸收不想要的辐射并拦截碎片以增强辐射束的光谱纯度。

92. 发明授权

US08018576B2 Contamination prevention system, a lithographic apparatus, a radiation source and a method for manufacturing a device 失效
标题翻译：防污染系统，光刻设备，辐射源及其制造方法
公开(公告)号：US08018576B2
公开(公告)日：2011-09-13
申请号：US11727166
申请日：2007-03-23
申请人： Arnoud Cornelis Wassink
发明人： Arnoud Cornelis Wassink
IPC分类号： G03B27/42
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033 , G03F7/70883
摘要： A contamination prevention system constructed and arranged to prevent material emanating from a radiation source from propagating with radiation from the radiation source into or within a lithographic apparatus. The contamination prevention system includes a channel barrier constructed and arranged to traverse the radiation from the radiation source. The channel barrier includes a plurality of elongated channel members constructed and arranged to absorb or deflect the material. The channel members are rotatable around an axis of rotation by a drive connected to the channel barrier. The contamination prevention system also includes a cooling system provided on an outer surface of the channel barrier.
摘要翻译：一种防污染系统，其被构造和布置成防止从辐射源发出的物质不会从辐射源的辐射传播到光刻设备内或其内。防污染系统包括构造和布置成横穿来自辐射源的辐射的通道屏障。通道阻挡件包括构造和布置成吸收或偏转材料的多个细长通道构件。通道构件通过连接到通道屏障的驱动器围绕旋转轴线旋转。防污染系统还包括设置在通道屏障的外表面上的冷却系统。

93. 发明申请

US20110199592A1 LITHOGRAPHIC APPARATUS, REMOVABLE MEMBER AND DEVICE MANUFACTURING METHOD 有权
标题翻译：平面设备，可拆卸构件和设备制造方法
公开(公告)号：US20110199592A1
公开(公告)日：2011-08-18
申请号：US12946618
申请日：2010-11-15
申请人： Roelof Frederik De Graff , Marcus Adrianus Van De Kerkhof , Martinus Hendrikus Antonius Leenders , Paulus Martinus Maria Liebregts , Gerardus Martinus Antonius De Rooij , Martijn Houben , Nina Vladimirovna Dziomkina , Johanna Antoinette Maria Sondag-Huethorst , Niek Elout De Kruijf , Vijay Kumar Badam
发明人： Roelof Frederik De Graff , Marcus Adrianus Van De Kerkhof , Martinus Hendrikus Antonius Leenders , Paulus Martinus Maria Liebregts , Gerardus Martinus Antonius De Rooij , Martijn Houben , Nina Vladimirovna Dziomkina , Johanna Antoinette Maria Sondag-Huethorst , Niek Elout De Kruijf , Vijay Kumar Badam
IPC分类号： G03B27/52 , C09J7/00 , F16J15/02
CPC分类号： C09J7/0217 , B32B2307/546 , B32B2307/56 , B32B2307/71 , B32B2307/73 , B32B2405/00 , C09J7/21 , C09J7/385 , G03F7/70341 , G03F7/70808 , G03F7/70916 , G03F7/7095 , Y10T428/28 , Y10T428/2843 , Y10T428/2848 , Y10T428/2852
摘要： A sealing member is provided to prevent immersion liquid ingress to a gap between components. The sealing member has a plastic or polymer sealing portion that is adhered to the components forming the gap being sealed. The sealing member is constructed so as to reduce the force-coupling, in particular the time-related force-coupling, between the components being sealed.
摘要翻译：提供密封构件以防止浸入液体进入部件之间的间隙。密封构件具有粘附到形成被密封的间隙的部件的塑料或聚合物密封部分。密封构件被构造成减少被密封的部件之间的力耦合，特别是与时间有关的力耦合。

94. 发明授权

US07999241B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US07999241B2
公开(公告)日：2011-08-16
申请号：US12605113
申请日：2009-10-23
申请人： Shinji Nagai , Takanobu Ishihara , Kouji Kakizaki , Tamotsu Abe
发明人： Shinji Nagai , Takanobu Ishihara , Kouji Kakizaki , Tamotsu Abe
IPC分类号： G21K5/02 , H01J17/26
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70175 , G03F7/70916 , H05G2/006 , H05G2/008
摘要： An extreme ultraviolet light source apparatus has a magnetic field generator which generates a magnetic field region around a direction of the magnetic field passing through a plasma region in which a plasma is to be generated and converges charged particles including ion emitted from the plasma region toward the direction of the magnetic field, a first charged particle collector (receiver) mounted at both sides of an axis of the magnetic field in the magnetic field region in order to collect (receive) the charged particles converged by the magnetic field, a target supply unit supplying a target from a nozzle located outside a converging region in which the charged particles are to be converged inside the magnetic field region in an extreme ultraviolet light generating chamber, and a target collector located at a position opposite to the nozzle, the target retrieval portion retrieving a residual target which does not contribute to generation of the plasma.
摘要翻译：极紫外光源装置具有磁场发生器，该磁场发生器在通过等离子体产生等离子体区域的磁场方向周围产生磁场区域，并将包含从等离子体区域射出的离子的带电粒子向着磁场方向，安装在磁场区域的磁场轴的两侧的第一带电粒子收集器（接收器），以收集（接收）由磁场收敛的带电粒子;目标供给单元从位于极紫外光发生室内的磁场区域内的会聚区域的会聚区域的喷嘴和位于与喷嘴相对的位置的目标集合体供给目标，目标取出部检索对等离子体的产生无贡献的残留目标。

95. 发明授权

US07990516B2 Immersion exposure apparatus and device manufacturing method with liquid detection apparatus 有权
标题翻译：浸液曝光装置及液体检测装置的装置制造方法
公开(公告)号：US07990516B2
公开(公告)日：2011-08-02
申请号：US10587268
申请日：2005-01-28
申请人： Hiroaki Takaiwa , Takashi Horiuchi
发明人： Hiroaki Takaiwa , Takashi Horiuchi
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03B27/42 , G03F7/7085 , G03F7/70916
摘要： An exposure apparatus for exposing a substrate by emitting exposure light thereto through a projection optical system and liquid, has a detection apparatus that detects whether the liquid is present on an object disposed lower than a front end of the projection optical system. Another detection apparatus has an emitting portion that emits detection light to an immersion area between the projection optical system and an object disposed on an image plane side thereof, and a light-receiving portion disposed at a predetermined position for the detection light; therein, at least one of size and shape of the immersion area is obtained based on light receiving results. The detection apparatus is used to detect the presence of liquid on such lower-disposed object, the state of the immersion area, or shape or contact angle of the liquid. Optimal measures are taken, based on detection results, for maintaining high exposure and measurement accuracies.
摘要翻译：一种用于通过投影光学系统和液体向其发射曝光的曝光基板的曝光装置，具有检测装置，其检测液体是否存在于投影光学系统的前端下方的物体上。另一种检测装置具有发射部分，其向投影光学系统和设置在其图像平面侧的物体之间的浸没区域发射检测光;以及光接收部分，设置在用于检测光的预定位置; 其中，基于光接收结果获得浸渍区域的尺寸和形状中的至少一个。该检测装置用于检测这种下位物体上的液体的存在，浸渍区域的状态，或液体的形状或接触角。基于检测结果，采取最佳措施，保持高曝光和测量精度。

96. 发明授权

US07986146B2 Method and system for detecting existence of an undesirable particle during semiconductor fabrication 有权
标题翻译：用于在半导体制造期间检测不期望的颗粒的存在的方法和系统
公开(公告)号：US07986146B2
公开(公告)日：2011-07-26
申请号：US11606440
申请日：2006-11-29
申请人： Harry J. Levinson , Obert Reeves Wood, II
发明人： Harry J. Levinson , Obert Reeves Wood, II
IPC分类号： G01R31/08
CPC分类号： G03F7/70916 , G03F7/707 , H01L21/67288
摘要： One exemplary embodiment is a method for detecting existence of an undesirable particle between a planar lithographic object, such as a semiconductor wafer or a lithographic mask, and a chuck during semiconductor fabrication. The exemplary method in this embodiment includes placing the planar lithographic object, such as the semiconductor wafer, over the chuck. The method further includes measuring a change in at least one electrical characteristic formed by and between the chuck and the planar lithographic object, such as measuring a change in capacitance between the chuck and semiconductor wafer, caused by the undesirable particle.
摘要翻译：一个示例性实施例是用于在半导体制造期间检测平面光刻物体（例如半导体晶片或光刻掩模）和卡盘之间的不期望的粒子的存在的方法。该实施例中的示例性方法包括将诸如半导体晶片的平面光刻物体放置在卡盘上。该方法还包括测量由卡盘和平面光刻物体之间形成的和在平面光刻物体之间形成的至少一个电特性的变化，例如测量卡盘和半导体晶片之间由不期望的粒子引起的电容变化。

97. 发明申请

US20110170083A1 Lithographic Apparatus and Device Manufacturing Method 审中-公开
标题翻译：光刻设备和器件制造方法
公开(公告)号：US20110170083A1
公开(公告)日：2011-07-14
申请号：US12904626
申请日：2010-10-14
申请人： Luigi Scaccabarozzi , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Andrei Mikhailovich Yakunin
发明人： Luigi Scaccabarozzi , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Andrei Mikhailovich Yakunin
IPC分类号： G03B27/72
CPC分类号： G03F1/84 , G03F7/7085 , G03F7/70908 , G03F7/70916
摘要： A system and method are used to detect thermal radiation from a mask. Debris particles on the mask heat up, but do not cool down as quickly as the surrounding mask. Due to the temperature difference, the wavelength of radiation emitted by particles and the mask differs. Thus by detecting the thermal radiation, it is possible to detect the presence of particles deposited on the mask. If particles are detected, the mask can be cleaned.
摘要翻译：使用系统和方法来检测来自掩模的热辐射。面具上的碎屑颗粒加热，但不要像周围的面具一样冷却下来。由于温度差异，颗粒和掩模发射的辐射波长不同。因此，通过检测热辐射，可以检测沉积在掩模上的颗粒的存在。如果检测到颗粒，则可以清洁面罩。

98. 发明申请

US20110170079A1 RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS 有权
标题翻译：辐射系统和光刻设备
公开(公告)号：US20110170079A1
公开(公告)日：2011-07-14
申请号：US13062872
申请日：2009-04-30
申请人： Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun
发明人： Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun
IPC分类号： G03B27/54 , H01J1/50
CPC分类号： G03F7/70916 , G03F7/70175 , G03F7/70858 , G03F7/70983 , H05G2/003 , H05G2/005
摘要： A radiation system is configured to generate a radiation beam. The radiation system includes a radiation source configured to generate a plasma that emits radiation and debris, and a radiation collector configured to direct collected radiation to a radiation beam emission aperture. A magnetic field generator is configured to generate a magnetic field with a gradient in magnetic field strength to direct the plasma away from the radiation collector.
摘要翻译：辐射系统被配置为产生辐射束。辐射系统包括被配置为产生发射辐射和碎屑的等离子体的辐射源，以及被配置为将收集的辐射引导到辐射束发射孔径的辐射收集器。磁场发生器被配置为产生具有磁场强度梯度的磁场，以将等离子体引导离开辐射收集器。

99. 发明授权

US07963144B2 Gas analyzing system, lithographic apparatus and method of improving a sensitivity of a gas analyzing system 失效
标题翻译：气体分析系统，光刻设备和提高气体分析系统灵敏度的方法
公开(公告)号：US07963144B2
公开(公告)日：2011-06-21
申请号：US12500203
申请日：2009-07-09
申请人： Norbertus Benedictus Koster , Richard Versluis , Bart Dinand Paarhuis
发明人： Norbertus Benedictus Koster , Richard Versluis , Bart Dinand Paarhuis
IPC分类号： G01N7/00 , G01N37/00
CPC分类号： G03F7/70916 , G01N1/2273 , G03F7/7085
摘要： A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross -sectional area of the channel section.
摘要翻译：公开了一种气体分析系统，该系统包括气体分析器和排气室内部的减压室，减压室具有用于气体混合物流入的入口结构和用于气体混合物流出的出口构型，其中在操作期间的出口构造连接到泵系统以便于气体混合物流出，所述出口构造具有通道部分和流动部分，所述流动部分的横截面积小于横截面面积的横截面面积通道部分。

100. 发明授权

US07955767B2 Method for examining a wafer with regard to a contamination limit and EUV projection exposure system 有权
标题翻译：关于污染极限和EUV投影曝光系统检查晶片的方法
公开(公告)号：US07955767B2
公开(公告)日：2011-06-07
申请号：US12690571
申请日：2010-01-20
申请人： Andreas Dorsel , Stefan Schmidt
发明人： Andreas Dorsel , Stefan Schmidt
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70916 , G03F7/70425 , G03F7/70608 , G03F7/7075 , G03F7/70808 , G03F7/70866 , G03F7/70925 , G03F7/70983
摘要： A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses contaminating substances, is examined with regard to a contamination limit before the wafer (13) is exposed in an EUV projection exposure system (1). The method preferably includes: arranging the wafer (13) and/or a test disc coated with the same resist (13a) as the resist (13a) of the wafer (13) in a vacuum chamber (19), evacuating the vacuum chamber (19), and measuring the contamination potential of the contaminating substances outgassed from the wafer (13) in the evacuated vacuum chamber (19), and also comparing the contamination potential of the wafer (13) with a contamination limit. An EUV projection exposure system (1) for carrying out the method is also disclosed. By rejecting wafers having an especially high contamination risk, the contamination of optical elements in the projection exposure system (1) on wafer exposure may be distinctly reduced.
摘要翻译：关于污染极限检查至少一个晶片（13）的方法，其中关于抗污染物质（13a）的晶片（13）的抗蚀剂（13a）的污染潜力被检测为污染物质晶片（13）在EUV投影曝光系统（1）中曝光之前的污染极限。该方法优选地包括：将晶片（13）和/或涂覆有与晶片（13）的抗蚀剂（13a）相同的抗蚀剂（13a）的测试盘放置在真空室（19）中，抽真空室 19），并且测量从真空室（19）中的晶片（13）脱气的污染物质的污染潜力，并且还将晶片（13）的污染电位与污染极限进行比较。还公开了一种用于执行该方法的EUV投影曝光系统（1）。通过拒绝具有特别高的污染风险的晶片，可以明显减少投影曝光系统（1）中晶片曝光的光学元件的污染。

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