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91. 发明申请

US20070012561A1 WAFER CLAMP ASSEMBLY FOR HOLDING A WAFER DURING A DEPOSITION PROCESS 有权
标题翻译：用于在沉积过程中保持一个水平的水平夹具组件
公开(公告)号：US20070012561A1
公开(公告)日：2007-01-18
申请号：US11456722
申请日：2006-07-11
申请人： Hermann Bichler , Reinhard Hanzlik , Stefan Fries , Frank Mueller , Heinrich Wachinger
发明人： Hermann Bichler , Reinhard Hanzlik , Stefan Fries , Frank Mueller , Heinrich Wachinger
IPC分类号： C23C14/00
CPC分类号： C23C14/50 , C23C14/34 , C23C16/4585 , H01L21/02631 , H01L21/68721 , H01L21/68728
摘要： A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.
摘要翻译：用于在沉积工艺期间保持晶片的晶片夹具组件包括限定中心凹部的外环形构件，该中心凹部具有略大于晶片直径的直径。多个指状构件由外部环形构件承载并且从外部环形构件径向向内延伸到中心凹部中，其中每个指状构件具有用于在沉积工艺期间接触晶片的自由端。

92. 发明申请

US20060275546A1 Apparatus and methods for isolating chemical vapor reactions at a substrate surface 有权
标题翻译：用于在衬底表面分离化学气相反应的装置和方法
公开(公告)号：US20060275546A1
公开(公告)日：2006-12-07
申请号：US11144510
申请日：2005-06-02
申请人： Chantal Arena , Chris Werkhoven , Ron Bertram
发明人： Chantal Arena , Chris Werkhoven , Ron Bertram
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45504 , C23C16/45508 , C23C16/4584 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane. The angled flows of source gases have reduced interdiffusion volume above the substrate, preferably resulting in deposition substantially along a line extending across the center of the substrate. The substrate can be rotated during deposition to produce a substantially uniform film on the substrate.
摘要翻译：提供了一种用于处理衬底的设备和方法。该装置包括反应室，腔室内的衬底保持器以及第一和第二注射器部件。反应室具有上游端和下游端，衬底保持器定位在其之间。衬底保持器构造成支撑衬底，使得衬底在大致朝向上游端和下游端延伸的平面内。第一注射器部件位于腔室的上游端，并且构造成朝向由衬底保持器支撑的衬底上注入第一薄气帘。第一注射器部件被构造成大致沿着平行于基板的第一侧的第一平面注入第一帘幕。第二喷射器部件被构造成朝向基板的第一侧注入第二薄气帘。第二喷射器部件构造成大致沿着相对于第一平面成一角度定向的第二平面喷射第二气帘。源气体的倾斜流动减少了在基底上方的相互扩散体积，优选地导致基本上沿着延伸穿过基底中心的线进行沉积。衬底可以在沉积期间旋转以在衬底上产生基本均匀的膜。

93. 发明申请

US20060118041A1 Guard ring 审中-公开
标题翻译：护环
公开(公告)号：US20060118041A1
公开(公告)日：2006-06-08
申请号：US11009185
申请日：2004-12-08
申请人： Chien-Hsin Lai
发明人： Chien-Hsin Lai
IPC分类号： C23C16/00
CPC分类号： H01J37/32642 , C23C16/4585
摘要： A guard ring for a deposition apparatus, wherein when a wafer is placed on a deposition apparatus and the guard ring is placed to surround the wafer, the a top surface of the guard ring adjacent to the wafer is higher than or equal to that of the wafer. Moreover, when a wafer is placed on the deposition apparatus and the guard ring is placed to surround the wafer, a distance between the guard ring and the wafer is less than 0.7 millimeters. The guard ring according to the present invention can protect the sidewall of the wafer from having lateral deposition so as to increase the planar level of the deposited thin film and the yield of the deposition process.
摘要翻译：一种用于沉积设备的保护环，其中当将晶片放置在沉积设备上并且保护环被放置以围绕晶片时，与晶片相邻的保护环的顶表面高于或等于晶圆。此外，当将晶片放置在沉积设备上并且保护环被放置以围绕晶片时，保护环和晶片之间的距离小于0.7毫米。根据本发明的保护环可以保护晶片的侧壁不具有横向沉积，以便增加沉积的薄膜的平面水平和沉积过程的产量。

94. 发明授权

US07049549B2 Multi-thermal zone shielding apparatus 有权
标题翻译：多热区屏蔽装置
公开(公告)号：US07049549B2
公开(公告)日：2006-05-23
申请号：US10894663
申请日：2004-07-20
申请人： Tue Nguyen , Craig Alan Bercaw
发明人： Tue Nguyen , Craig Alan Bercaw
IPC分类号： F27B5/14
CPC分类号： H01L21/67103 , C23C16/4585 , C23C16/481
摘要： A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.
摘要翻译：部分覆盖基板并且具有两个不同热性质的区域的沉积屏蔽可以在屏蔽上提供最小的沉积，同时由于基板接触而具有最小的热损失。低热透射率的区域是屏蔽基板的接触，并且由于低的透热性，加热的基板的热损失最小，导致更均匀的温度分布和更均匀的薄膜沉积。高透光率区域位于屏蔽层的其余部分，允许来自被加热基板的热能透过，从而形成较冷的屏蔽层，并在屏蔽层上形成最小的沉积。

95. 发明申请

US20050211168A1 Mixing box, and apparatus and method for producing films 有权
标题翻译：混合箱，以及制造薄膜的装置和方法
公开(公告)号：US20050211168A1
公开(公告)日：2005-09-29
申请号：US11132173
申请日：2005-05-19
申请人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Masaki Uematsu , Koukou Suu
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Masaki Uematsu , Koukou Suu
IPC分类号： B01F3/02 , B01F5/02 , B01J4/00 , B01J10/02 , B01J19/24 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45502 , B01F3/02 , B01F5/0256 , B01F2215/0427 , B01J4/001 , B01J10/02 , B01J19/247 , C23C16/4412 , C23C16/45512 , C23C16/45519 , C23C16/4558 , C23C16/4585 , H01L21/67017
摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.
摘要翻译：一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头反对舞台。圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上，从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

96. 发明申请

US20050092439A1 Low/high temperature substrate holder to reduce edge rolloff and backside damage 审中-公开
标题翻译：低/高温基板支架，以减少边缘滚降和背面损坏
公开(公告)号：US20050092439A1
公开(公告)日：2005-05-05
申请号：US10697401
申请日：2003-10-29
申请人： Tony Keeton , Matthew Goodman , Michael Stamp
发明人： Tony Keeton , Matthew Goodman , Michael Stamp
IPC分类号： C23C14/50 , C23C16/458 , H01L21/683 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , C23C16/4585 , H01L21/6833
摘要： A substrate holder for processing a semiconductor substrate that minimizes substrate non-uniformities as well as backside damage. The substrate holder includes one or more support elements, such as a plurality of veins configured in an annular ring to support an outer edge of a substrate. The veins are configured to support a substrate of a particular size in a support plane defined by the top surfaces of the veins. The substrate holder also has one or more annular grooves formed in the top surface of the holder. In a preferred embodiment, the substrate holder also has a raised annular ring positioned radially inward of the grooves and the support elements. The top surface of the raised annular ring is no higher that the top surfaces of the veins.
摘要翻译：一种用于处理半导体衬底的衬底保持器，其使衬底不均匀性以及背面损坏最小化。衬底保持器包括一个或多个支撑元件，例如构造成环形环中的多个静脉，以支撑衬底的外边缘。静脉构造成在由静脉的顶部表面限定的支撑平面中支撑特定尺寸的基底。衬底保持器还具有形成在保持器的顶表面中的一个或多个环形槽。在优选实施例中，衬底保持器还具有位于凹槽和支撑元件的径向内侧的凸起环形环。凸起环形圈的顶面不大于静脉的顶面。

97. 发明申请

US20050016466A1 Susceptor with raised tabs for semiconductor wafer processing 审中-公开
标题翻译：具有用于半导体晶片处理的凸起片的受体
公开(公告)号：US20050016466A1
公开(公告)日：2005-01-27
申请号：US10626174
申请日：2003-07-23
申请人： Lance Scudder , Michael Thompson , Robert Trujillo
发明人： Lance Scudder , Michael Thompson , Robert Trujillo
IPC分类号： C23C16/458 , H01L21/687 , H01L21/31 , C23C16/00 , H01L21/469
CPC分类号： H01L21/68735 , C23C16/4585 , H01L21/6875
摘要： Described is a susceptor with a wafer pocket, to contain a wafer during a wafer processing procedure, and a plurality of raised tabs along the outer perimeter of the wafer pocket that are configured to maintain the wafer in the wafer pocket during wafer processing. The tabs have a tab height that is independent of the pocket depth.
摘要翻译：描述了具有晶片袋的基座，以在晶片处理过程期间容纳晶片，以及沿着晶片槽的外周边的多个凸起突片，其配置成在晶片处理期间将晶片保持在晶片槽中。标签具有独立于凹坑深度的标签高度。

98. 发明申请

US20040261722A1 Multi-thermal zone shielding apparatus 有权
标题翻译：多热区屏蔽装置
公开(公告)号：US20040261722A1
公开(公告)日：2004-12-30
申请号：US10894663
申请日：2004-07-20
申请人： TEGAL CORPORATION
发明人： Tue Nguyen , Craig Alan Bercaw
IPC分类号： C23C016/00
CPC分类号： H01L21/67103 , C23C16/4585 , C23C16/481
摘要： A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece. The apparatus can further include a non-reactive gas inlet for creating a pressurized cavity in the vicinity of the shielded portion of the workpiece.
摘要翻译：多热区屏蔽装置为屏蔽件提供多区温度分布，同时在高温处理系统中屏蔽热工件的一部分。该设备将工件温度保持在热屏蔽区域，并将屏蔽的其余部分保持在较低的温度。该装置包括具有低热透射率部分的多热区屏蔽件，用于防止由于较少的热能透过屏蔽部分的屏蔽部分而导致来自热工件的屏蔽部分的热损失，因此在工件的屏蔽部分和其余屏蔽层中的高热透射率部分，用于允许来自热工件的更多热能透过屏蔽件而不加热屏蔽件，从而在屏蔽件的部分保持较低的温度不与工件接合。该装置还可以包括用于在工件的屏蔽部分附近产生加压腔的非反应性气体入口。

99. 发明授权

US06753255B1 Process for wafer edge profile control using gas flow control ring 有权
标题翻译：使用气流控制环进行晶圆边缘轮廓控制的工艺
公开(公告)号：US06753255B1
公开(公告)日：2004-06-22
申请号：US10200469
申请日：2002-07-18
申请人： Kaoru Takada , Masaru Shimizu , Masanori Kanayasu , Shinsuke Ichikawa
发明人： Kaoru Takada , Masaru Shimizu , Masanori Kanayasu , Shinsuke Ichikawa
IPC分类号： H01L2144
CPC分类号： H01L21/68735 , C23C16/4585 , H01L21/28556 , H01L21/67017 , H01L21/67253
摘要： A chemical vapor deposition process controls the thickness of a film on an edge of a wafer by modifying the density of flow gases at the edge of the wafer through the use of a gas flow control ring. The deposition process is performed with the gas flow control ring disposed about a wafer holding region on a wafer holder. The top surface of the gas flow control ring is controlled relative to the top surface of the wafer to adjust the thickness of the film deposited on the wafer edge. In one particular embodiment, the gas flow control ring has a top surface in the same plane as the top surface of the wafer. In another embodiment, the deposition process is performed with the clearance between the inner diameter of the gas flow control ring and the periphery of the wafer minimized.
摘要翻译：化学气相沉积工艺通过使用气流控制环改变晶片边缘处的流动气体的密度来控制晶片边缘上的膜的厚度。沉积过程是通过设置在晶片保持器上的晶片保持区域周围的气体流量控制环来进行的。气流控制环的顶表面相对于晶片的顶表面被控制，以调节沉积在晶片边缘上的膜的厚度。在一个具体实施例中，气流控制环在与晶片顶表面相同的平面中具有顶表面。在另一个实施例中，沉积过程是以气流控制环的内径与晶片周边之间的间隙最小化来进行的。

100. 发明申请

US20040089235A1 Mixer, and device and method for manufacturing thin-film 有权
公开(公告)号：US20040089235A1
公开(公告)日：2004-05-13
申请号：US10466324
申请日：2003-07-29
发明人： Takakazu Yamada , Takeshi Masuda , Masahiko Kajinuma , Masaki Uematsu , Koukou Suu
IPC分类号： C23C016/00
CPC分类号： C23C16/45502 , B01F3/02 , B01F5/0256 , B01F2215/0427 , B01J4/001 , B01J10/02 , B01J19/247 , C23C16/4412 , C23C16/45512 , C23C16/45519 , C23C16/4558 , C23C16/4585 , H01L21/67017
摘要： A mixing box 1 comprises a stirring chamber 2 in which two gas-introduction pipes 5, 6 for introducing gases are arranged in such a manner that the gas-introduction inlets 5a, 6a thereof are opposed to one another and a diffusion chamber 3 for diffusing a gas mixture, wherein a partition plate 4 having a specific shape is positioned between the stirring chamber and the diffusion chamber in such a manner that the volume of the diffusion chamber is larger than that of the stirring chamber, wherein a gas-supply opening 7 is arranged, on the partition plate, at a desired position on the lower side of the direction perpendicular to the straight line connecting the two gas-introduction inlets, the box being able to uniformly admix gases having different masses and having a simple structure. The partition plate has a shape of a curve of second degree, which is convex with respect to the bottom of the mixing box. The present invention also relates to a thin film-manufacturing system equipped with the mixing box 1 and a method for preparing a film using a film-forming gas, which is uniformly admixed together in the mixing box. The present invention also relates to a thin film-manufacturing system, which has a simple structure and can be manufactured at a low cost and which also permits the inhibition of the generation of any turbulent flow, convection current and heat convection and the formation of a uniform gas stream of a mixed gas, wherein a stage 53 for placing a substrate thereon is disposed within the vacuum reactor 2 and a gas head 57 for supplying the film-forming gas to the central area on the top face of the vacuum reactor 2 is arranged in such a manner that the head is opposed to the stage 53. A cylindrical sleeve member 61 having a desired length is disposed while it comes in close contact with the side wall of the stage 53 to thus surround the periphery of the stage and the height of the stage can be established at the position at which the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of the first space, in such a manner that an exhaust gas is isotropically discharged from a first space formed by the gas head and the upper face of the stage without causing any convection current therein through the interstice between the sleeve member and the inner wall surface constituting the reactor.

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