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91. 发明申请

US20100189912A1 SUBSTRATE HOLDER, DEPOSITION METHOD USING SUBSTRATE HOLDER, HARD DISK MANUFACTURING METHOD, DEPOSITION APPARATUS, AND PROGRAM 有权
标题翻译：基板支架，使用基板支架的沉积方法，硬盘制造方法，沉积装置和程序
公开(公告)号：US20100189912A1
公开(公告)日：2010-07-29
申请号：US12754364
申请日：2010-04-05
申请人： Shinya Houman , Hiroshi Torii
发明人： Shinya Houman , Hiroshi Torii
IPC分类号： B05D1/36 , B25B5/00 , B05C9/00 , C23C14/34
CPC分类号： G11B5/851 , C23C16/4585 , G11B23/042 , H01L21/68728 , H01L21/68778
摘要： A substrate holder for supporting an insulating substrate includes a conductive substrate holder main body having an opening, a first support member formed to protrude inside the opening from the inner periphery of the opening, and including a clamping member which supports one end portion of the insulating substrate, and a second support member including a clamping member which supports the other end portion of the insulating substrate, and is movable so as to protrude inside the opening or retract from inside the opening.
摘要翻译：用于支撑绝缘基板的基板保持器包括具有开口的导电基板保持器主体，形成为从开口的内周突出到开口内部的第一支撑构件，并且包括夹持构件，该夹紧构件支撑绝缘的一个端部基板，以及第二支撑构件，其包括支撑绝缘基板的另一端部的夹持构件，并且可移动地从开口内部突出到开口内部或内部。

92. 发明申请

US20100136261A1 MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL 审中-公开
标题翻译： RF恢复条的调制用于均匀控制
公开(公告)号：US20100136261A1
公开(公告)日：2010-06-03
申请号：US12628404
申请日：2009-12-01
申请人： Alan Tso , Daniel J. Hoffman , Tsutomu (Tom) Tanaka , William N. Taylor, JR. , Rongping Wang , John M. White
发明人： Alan Tso , Daniel J. Hoffman , Tsutomu (Tom) Tanaka , William N. Taylor, JR. , Rongping Wang , John M. White
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32183
摘要： Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.
摘要翻译：本发明的实施例一般涉及一种使用等离子体处理衬底的方法和装置。更具体地，本发明的实施例提供了一种具有耦合到多个RF返回带的电极的等离子体处理室，其中设置和/或调整RF返回带的阻抗以调整处理期间的等离子体分布。在一个实施例中，通过改变RF返回带的宽度，通过改变RF返回带的间隔，通过改变RF返回带的位置，通过增加一个电容器到RF返回带或其组合。

93. 发明授权

US07718005B2 Film forming equipment and film forming method 失效
标题翻译：成膜设备及成膜方法
公开(公告)号：US07718005B2
公开(公告)日：2010-05-18
申请号：US11661126
申请日：2005-08-25
申请人： Tatsuya Handa , Yasushi Aiba
发明人： Tatsuya Handa , Yasushi Aiba
IPC分类号： C23C16/00 , C23C16/52
CPC分类号： H01L21/67115 , C23C16/45521 , C23C16/4585 , H01L21/68721 , H01L21/6875
摘要： Film forming equipment (20) is provided with a treatment container (22), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table (46) having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (80). A clamping apparatus (56) is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure (92) having a recessed part (94) is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.
摘要翻译：成膜设备（20）设置有处理容器（22），用于向容器供应包括成膜气体的处理气体的气体供给系统和用于排出容器中的气氛的排气系统。在处理容器中设置有具有用于放置待处理的平板状体（W）的放置面的放置台（46）。在台面上待处理的身体由加热器（80）加热。夹持装置（56）设置成与要处理的身体的表面周边部分邻接/分离，以便将待处理的身体按压/释放在放置台上。在放置台的放置面上，形成具有凹部（94）的吸引结构（92），用于通过压力差临时吸取被处理体，通过在放置面和后平面之间形成大致密封的空间的身体要被治疗。

94. 发明申请

US20100081284A1 METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
标题翻译：改进流程室流量均匀性的方法和装置
公开(公告)号：US20100081284A1
公开(公告)日：2010-04-01
申请号：US12240090
申请日：2008-09-29
申请人： AJIT BALAKRISHNA , Aniruddha Pal , James D. Carducci , Semyon L. Kats , Shahid Rauf
发明人： AJIT BALAKRISHNA , Aniruddha Pal , James D. Carducci , Semyon L. Kats , Shahid Rauf
IPC分类号： H01L21/3065 , C23F1/08 , C23C16/00
CPC分类号： H01J37/32449 , C23C16/45591 , C23C16/4585 , H01J37/321 , H01J37/3244
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.
摘要翻译：本文提供了处理衬底的方法和装置。在一些实施例中，用于处理衬底的装置包括流量均衡器，其被配置为控制处理室的处理容积和排气口之间的气体流。流量均衡器包括至少一个限制器板，其被配置为设置在接近要处理的基板的表面的平面中，并且限定了至少一个限制器板的边缘与腔室壁中的一个之间的方位不均匀的间隙或安装在处理室中时的基板支撑件。

95. 发明申请

US20090308319A1 WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
标题翻译：使用它的波浪载体和外延机
公开(公告)号：US20090308319A1
公开(公告)日：2009-12-17
申请号：US12194013
申请日：2008-08-19
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C30B25/12
摘要： A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.
摘要翻译：晶片载体包括以分解的方式定位在基座的顶表面上的基座和屏蔽板。基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

96. 发明申请

US20090266299A1 LOW PROFILE PROCESS KIT 有权
标题翻译：低配置工艺包
公开(公告)号：US20090266299A1
公开(公告)日：2009-10-29
申请号：US12109187
申请日：2008-04-24
申请人： MUHAMMAD M. RASHEED , TERUKI IWASHITA , HIROSHI OTAKE , YUKI KOGA , KAZUTOSHI MAEHARA , XINGLONG CHEN , SUDHIR GONDHALEKAR , DMITRY LUBOMIRSKY
发明人： MUHAMMAD M. RASHEED , TERUKI IWASHITA , HIROSHI OTAKE , YUKI KOGA , KAZUTOSHI MAEHARA , XINGLONG CHEN , SUDHIR GONDHALEKAR , DMITRY LUBOMIRSKY
IPC分类号： C23C16/448
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

97. 发明申请

US20090200251A1 CLAMPING MECHANISM FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件钳位机制
公开(公告)号：US20090200251A1
公开(公告)日：2009-08-13
申请号：US12027767
申请日：2008-02-07
申请人： Akira SHIMIZU , Akira WATANABE
发明人： Akira SHIMIZU , Akira WATANABE
IPC分类号： H01L21/67 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/4585 , H01L21/68721
摘要： A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate.
摘要翻译：一种用于半导体衬底的夹持机构包括：C形拾取板; 感受器顶板，其具有适于在其上容纳和支撑C形拾取板的内周部分的周边; 以及夹具，其包括（i）顶环部分，用于通过将所述基板的周边夹在所述顶环部分和所述基座顶板之间来夹持所述基板，以及（ii）拾取板支撑部分，其适于支撑所述基板的外周部分 C形拾取板，其中C形拾取板可在顶环部分和拾取板支撑部分之间移动，并且夹具可与C形拾取板和基座顶板一起向上移动。

98. 发明申请

US20090159006A1 THIN FILM PRODUCTION APPARATUS AND INNER BLOCK FOR THIN FILM PRODUCTION APPARATUS 有权
标题翻译：薄膜生产设备和内膜生产薄膜生产设备
公开(公告)号：US20090159006A1
公开(公告)日：2009-06-25
申请号：US12299936
申请日：2007-04-27
申请人： Takakazu Yamada , Osamu Irino , Tsuyoshi Kagami
发明人： Takakazu Yamada , Osamu Irino , Tsuyoshi Kagami
IPC分类号： C23C16/44
CPC分类号： C23C16/44 , C23C16/4585 , C23C16/4586 , C23C16/52
摘要： Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized.
摘要翻译：提供一种通过采用公共部件能够降低成本并提高沉积效率的薄膜制造装置。在根据本发明的薄膜制造装置中，通过利用设置在真空容器内部的内块来确定反应空间的体积来优化反应空间的体积，即通过仅改变内径的尺寸的内部块，而不改变真空罐的尺寸。因此，使用共同的真空槽可以在具有不同尺寸的多种基板上形成膜。此外，可以将要处理的基板的每个尺寸准备的装置结构部件的数量的增加最小化，从而可以降低部件的成本，并且在简化组装操作，产品检查操作和调整操作的同时可以实现优异的沉积效率和稳定的成膜。

99. 发明授权

US07537673B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07537673B2
公开(公告)日：2009-05-26
申请号：US11219956
申请日：2005-09-06
申请人： Young Jong Lee , Jun Young Choi , Hyun Hwan Ahn , Chan-Ho Kang , Hyun-Woo Baek , Young-Joo Hwang
发明人： Young Jong Lee , Jun Young Choi , Hyun Hwan Ahn , Chan-Ho Kang , Hyun-Woo Baek , Young-Joo Hwang
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/458 , C23C16/50
CPC分类号： C23C16/4585
摘要： Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.
摘要翻译：本文公开了一种等离子体处理装置，其在真空室内产生等离子体以使用等离子体处理半导体衬底。该装置包括基板安装台，外提升杆和挡板。外提升杆包括驱动轴和垂直于驱动轴的上端联接的基板支撑构件。挡板包括耦合到驱动轴的上端的挡板和耦合到挡板的下表面的屏蔽部分。衬底支撑构件是可折叠衬底支撑构件。挡板和基板支撑构件通过驱动轴同时上下驱动。结果，可以在等离子体处理装置的操作期间保护基板支撑构件免受等离子体的影响，并且防止挡板和外部提升杆之间的干扰。

100. 发明授权

US07524532B2 Process for depositing thin layers on a substrate in a process chamber of adjustable height 有权
标题翻译：在可调节高度的处理室中的衬底上沉积薄层的工艺
公开(公告)号：US07524532B2
公开(公告)日：2009-04-28
申请号：US10967776
申请日：2004-10-18
申请人： Holger Jurgensen , Gerhard Karl Strauch
发明人： Holger Jurgensen , Gerhard Karl Strauch
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45589 , C23C16/4585 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.
摘要翻译：一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的工艺，处理室的底部由可围绕其垂直轴线可旋转地驱动的可调节衬底保持器和由腔体的盖组成，进气口元件盖子平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，该表面在衬底保持器的整个衬底承载表面上延伸，处理气体通过气体出口表面。该方法包括在沉积过程开始和/或沉积过程之前改变由衬底承载表面和气体出口表面之间的距离限定的处理室的高度的步骤。

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