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1. 发明申请

US20070254101A1 Film Forming Equipment and Film Forming Method 失效
标题翻译：成膜设备和成膜方法
公开(公告)号：US20070254101A1
公开(公告)日：2007-11-01
申请号：US11661126
申请日：2005-08-25
申请人： Tatsuya Handa , Yasushi Aiba
发明人： Tatsuya Handa , Yasushi Aiba
IPC分类号： C23C16/458
CPC分类号： H01L21/67115 , C23C16/45521 , C23C16/4585 , H01L21/68721 , H01L21/6875
摘要： Film forming equipment (20) is provided with a treatment container (22), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table (46) having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (80). A clamping apparatus (56) is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure (92) having a recessed part (94) is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.
摘要翻译：成膜设备（20）设置有处理容器（22），用于向容器供应包括成膜气体的处理气体的气体供给系统和用于排出容器中的气氛的排气系统。在处理容器中设置有具有用于放置待处理的平板状体（W）的放置面的放置台（46）。在台面上待处理的身体由加热器（80）加热。夹持装置（56）设置成与要处理的身体的表面周边部分邻接/分离，以便将待处理的身体按压/释放在放置台上。在放置台的放置面上，形成具有凹部（94）的吸引结构（92），用于通过压力差临时吸取被处理体，通过在放置面和后平面之间形成大致密封的空间的身体要被治疗。

2. 发明授权

US07718005B2 Film forming equipment and film forming method 失效
标题翻译：成膜设备及成膜方法
公开(公告)号：US07718005B2
公开(公告)日：2010-05-18
申请号：US11661126
申请日：2005-08-25
申请人： Tatsuya Handa , Yasushi Aiba
发明人： Tatsuya Handa , Yasushi Aiba
IPC分类号： C23C16/00 , C23C16/52
CPC分类号： H01L21/67115 , C23C16/45521 , C23C16/4585 , H01L21/68721 , H01L21/6875
摘要： Film forming equipment (20) is provided with a treatment container (22), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table (46) having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (80). A clamping apparatus (56) is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure (92) having a recessed part (94) is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.
摘要翻译：成膜设备（20）设置有处理容器（22），用于向容器供应包括成膜气体的处理气体的气体供给系统和用于排出容器中的气氛的排气系统。在处理容器中设置有具有用于放置待处理的平板状体（W）的放置面的放置台（46）。在台面上待处理的身体由加热器（80）加热。夹持装置（56）设置成与要处理的身体的表面周边部分邻接/分离，以便将待处理的身体按压/释放在放置台上。在放置台的放置面上，形成具有凹部（94）的吸引结构（92），用于通过压力差临时吸取被处理体，通过在放置面和后平面之间形成大致密封的空间的身体要被治疗。

3. 发明申请

US20100041240A1 FOCUS RING, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：聚焦环，等离子体加工设备和等离子体处理方法
公开(公告)号：US20100041240A1
公开(公告)日：2010-02-18
申请号：US12539250
申请日：2009-08-11
申请人： Hiroshi TSUJIMOTO , Toshifumi Nagaiwa , Tatsuya Handa
发明人： Hiroshi TSUJIMOTO , Toshifumi Nagaiwa , Tatsuya Handa
IPC分类号： H01L21/30 , C23C16/54 , H01L21/3065
CPC分类号： H01J37/32642
摘要： A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portion of the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm.
摘要翻译：设置环形的聚焦环，以围绕目标基板在目标基板上安装在处理室中的目标基板上。处理室接收目标衬底并使所接收的目标衬底经受等离子体处理。在聚焦环首先用于等离子体处理的时刻，目标基板的边缘部分的下侧与对置基板的边缘部分的下侧的聚焦环的一部分之间的距离设定为等于或大于约0.4mm。

4. 发明授权

US08480849B2 Substrate processing apparatus and electrode structure 有权
标题翻译：基板加工装置及电极结构
公开(公告)号：US08480849B2
公开(公告)日：2013-07-09
申请号：US13617665
申请日：2012-09-14
申请人： Tatsuya Handa
发明人： Tatsuya Handa
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/3244 , H01J37/32541 , H01L21/67069
摘要： A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.
摘要翻译：一种能够防止在基板上产生异常放电的基板处理装置。容纳室容纳衬底。布置在容纳室中的安装台被配置为使得基板能够安装在其上。盘状电极结构与高频电源连接，经由至少一个气体供给系统与气体供给装置连接。电极结构中具有至少一个缓冲室和连接到气体供应系统的多个连接部分。缓冲室经由多个气孔与容纳室的内部连通，经由多个连接部与气体供给系统连通。用于缓冲室的多个连接部分以等间隔布置在以电极结构的中心为中心的圆周上。

5. 发明授权

US08282770B2 Substrate processing apparatus and electrode structure 有权
标题翻译：基板加工装置及电极结构
公开(公告)号：US08282770B2
公开(公告)日：2012-10-09
申请号：US12029728
申请日：2008-02-12
申请人： Tatsuya Handa
发明人： Tatsuya Handa
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/3244 , H01J37/32541 , H01L21/67069
摘要： A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.
摘要翻译：一种能够防止在基板上产生异常放电的基板处理装置。容纳室容纳衬底。布置在容纳室中的安装台被配置为使得基板能够安装在其上。盘状电极结构与高频电源连接，经由至少一个气体供给系统与气体供给装置连接。电极结构中具有至少一个缓冲室和连接到气体供应系统的多个连接部分。缓冲室经由多个气孔与容纳室的内部连通，经由多个连接部与气体供给系统连通。用于缓冲室的多个连接部分以等间隔布置在以电极结构的中心为中心的圆周上。

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