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    • 93. 发明申请
    • HEATING PLATE HAVING THERMAL SHOCK RESISTANCE AND CORROSION RESISTANCE
    • 加热板具有耐热和耐腐蚀性
    • US20150014297A1
    • 2015-01-15
    • US14229065
    • 2014-03-28
    • KOREA INSTITUTE OF MACHINERY AND MATERIALS
    • Se-Jong KimJung Hwan Lee
    • H05B3/28H01L21/67
    • H05B3/283H01L21/67103H05B3/143
    • Disclosed herein is a heating plate of a heating device for a semiconductor manufacturing process, including: a metal matrix, which is composed of a Ni—Fe—Co alloy, and in which a heating element is buried; a first ceramic layer formed on one side of the metal matrix; and a second ceramic layer formed on the other side and circumference of the metal matrix. According to the heating plate for a semiconductor manufacturing process of the present invention, even when thermal shock caused by repetition of heating and cooling is applied to the metal matrix composed of a Ni—Fe—Co alloy, the heating plate can exhibit excellent thermal shock resistance because the consistency between the metal matrix and the ceramic layer made of AlN or the like is maintained, and can prevent the metal matrix from being damaged because the ceramic layer has excellent chemical resistance and wear resistance. Therefore, the heating device for a semiconductor manufacturing process, including the heating plate, can stably heat a semiconductor substrate during etching, deposition or the like. Further, this heating device is economically efficient compared to a conventional heating device including a heating plate made of aluminum nitride (AlN) as a major ingredient. Furthermore, this heating device can accomplish excellent temperature uniformity and can rapidly heat a semiconductor substrate to desired temperature in a small amount of electric power, when the ceramic layer is made of a material having high thermal conductivity such as AlN or the like.
    • 本发明公开了一种用于半导体制造工艺的加热装置的加热板,包括:金属基体,其由Ni-Fe-Co合金构成,其中埋入加热元件; 形成在所述金属基体的一侧上的第一陶瓷层; 以及形成在金属基体的另一侧和圆周上的第二陶瓷层。 根据本发明的半导体制造工艺的加热板,即使在由Ni-Fe-Co合金构成的金属基体上施加由重复加热和冷却引起的热冲击的情况下,加热板也可以表现出优异的热冲击 由于金属基体和由AlN等制成的陶瓷层之间的一致性得以保持,因此可以防止由于陶瓷层具有优异的耐化学性和耐磨性而使金属基体受损。 因此,包括加热板的半导体制造工艺的加热装置能够在蚀刻,沉积等期间稳定地加热半导体基板。 此外,与以氮化铝(AlN)为主要成分的加热板的现有的加热装置相比,该加热装置的经济性高。 此外,当陶瓷层由诸如AlN等的高导热性的材料制成时,该加热装置可以实现优异的温度均匀性并且可以以少量的电力将半导体基板快速加热到所需温度。
    • 95. 发明授权
    • Method of fabricating thermoelectric material and thermoelectric material fabricated thereby
    • 制造由此制造的热电材料和热电材料的方法
    • US08865501B2
    • 2014-10-21
    • US13926618
    • 2013-06-25
    • Korea Institute of Machinery and Materials
    • Kyung Tae Kim
    • H01L35/34
    • H01L35/34H01L35/16H01L35/24Y10S977/902
    • The object of the present invention is to provide a method of fabricating a thermoelectric material and a thermoelectric material fabricated thereby. According to the present invention, since carbon nanotubes with no surface treatment are dispersed in the alloy, electrical resistivity decreases and electrical conductivity increases in comparison to surface-treated carbon nanotubes and an amount of thermal conductivity decreased is the same as that in the case of using surface-treated carbon nanotubes, and thus, a ZT value, a thermoelectric figure of merit, is improved. A separate reducing agent is not used and an organic solvent having reducing powder is used to improve economic factors related to material costs and process steps, and carbon nanotubes may be dispersed in the thermoelectric material without mechanical milling.
    • 本发明的目的是提供制造由此制造的热电材料和热电材料的方法。 根据本发明,由于没有表面处理的碳纳米管分散在合金中,所以与表面处理的碳纳米管相比,电阻率降低,电导率增加,导热率降低的情况与 使用表面处理的碳纳米管,因此提高了ZT值,热电品质因数。 不使用单独的还原剂,并且使用具有还原粉末的有机溶剂来改善与材料成本和工艺步骤相关的经济因素,并且碳纳米管可以分散在热电材料中而不进行机械研磨。
    • 97. 发明授权
    • Plasma reaction apparatus, plasma reaction method using the same, plasma reaction method of persistent gas, and apparatus for decreasing NOx by occlusion catalyst
    • 等离子体反应装置,使用其的等离子体反应方法,持续气体的等离子体反应方法,以及通过堵塞催化剂降低NOx的装置
    • US08568662B2
    • 2013-10-29
    • US11992077
    • 2006-10-09
    • Dae Hoon LeeKwan Tae KimYoung Hoon SongMin Suk ChaJae Ok LeeSeock Joon Kim
    • Dae Hoon LeeKwan Tae KimYoung Hoon SongMin Suk ChaJae Ok LeeSeock Joon Kim
    • B01J19/08
    • B01J19/088B01D53/32B01D53/8631B01D2257/404B01D2259/818B01J2219/0809B01J2219/0824B01J2219/083B01J2219/0869B01J2219/0871B01J2219/0883H05H1/48
    • The present invention relates to a plasma reaction apparatus and a plasma reaction method using the same. More particularly, the present invention relates to a plasma reaction apparatus which is applied to the reforming of fuel by generating rotating arc plasma and using the rotating arc being generated, the chemical treatment of a persistent gas, and the apparatus for decreasing NOx by an occlusion catalyst, and a plasma reaction method using the same. For this purpose, a raw material for a reaction is allowed to flow through an inflow hole in a swirl structure so that the raw material forms a rotating flow to progress. Accordingly, the raw material is sufficiently reacted in a plasma reaction space of a restrictive volume, and a high temperature plasma reaction is more promptly performed. Furthermore, a plasma reaction zone is expanded, prior to discharge, by a broad area chamber formed as the width of an upper part of a furnace is expanded, and plasma being generated is expanded and stayed as a pointed end spaced from an electrode at a predetermined interval is formed at an expanded end. Accordingly, the present invention relates to a plasma reaction apparatus and a plasma reaction method using the same, a plasma reaction method of a persistent gas, and an apparatus decreasing NOx by an occlusion catalyst, all of which are capable of excluding the discontinuity of the plasma reaction zone.
    • 本发明涉及一种等离子体反应装置及使用其的等离子体反应方法。 更具体地,本发明涉及一种等离子体反应装置,其通过产生旋转电弧等离子体并利用所产生的旋转电弧,持续气体的化学处理和通过闭塞来降低NOx的装置应用于燃料重整 催化剂和使用其的等离子体反应方法。 为此,允许用于反应的原料流过旋流结构中的流入孔,使得原料形成旋转流动进行。 因此,原料在限制体积的等离子体反应空间中充分反应,更迅速地进行高温等离子体反应。 此外,等离子体反应区在放电之前被扩大,当炉的上部的宽度被扩大时形成的宽区域,并且产生的等离子体膨胀并且作为与电极间隔开的尖端保持 在扩展端形成预定间隔。 因此,本发明涉及使用其的等离子体反应装置及其等离子体反应方法,持续气体的等离子体反应方法以及通过阻塞催化剂减少NOx的装置,所有这些都能够排除不均匀性 等离子体反应区。
    • 100. 发明授权
    • Patterning method of metal oxide thin film using nanoimprinting, and manufacturing method of light emitting diode
    • 使用纳米压印的金属氧化物薄膜的图案化方法和发光二极管的制造方法
    • US08486753B2
    • 2013-07-16
    • US12698194
    • 2010-02-02
    • Hyeong Ho ParkJun Ho JeongKi Don KimDae Geun ChoiJun Hyuk ChoiJi Hye LeeSoon Won Lee
    • Hyeong Ho ParkJun Ho JeongKi Don KimDae Geun ChoiJun Hyuk ChoiJi Hye LeeSoon Won Lee
    • H01L21/00
    • H01L33/42H01L2924/0002H01L2933/0016Y10T428/24802H01L2924/00
    • Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern. Within this, there is provided a method for forming a metal dioxe thin film pattern using nano imprinting, which makes it possible to simplify the process for forming the pattern since the process of separately applying the ultraviolet resin to be used as the resist can be omitted, and forms a micro/nano composite pattern through a single imprint process.
    • 公开了使用纳米压印的金属氧化物薄膜的图案化方法和发光二极管(LED)的制造方法。 使用纳米压印形成金属氧化物薄膜图案的方法包括:将光敏金属 - 有机材料前体溶液涂覆在基底上; 制备图案化的具有突起和凹陷结构的模具; 用图案化的模具对感光金属 - 有机材料前体涂层进行加压; 通过加热加压的感光金属 - 有机材料前体涂层或通过在被加热时向加压的感光金属 - 有机材料前体涂层照射紫外线来形成固化的金属氧化物薄膜图案; 并且从金属氧化物薄膜图案移除图案化的模具,并且还包括退火金属氧化物薄膜图案。 其中,提供了使用纳米压印形成金属二氧化物薄膜图案的方法,由于可以省略分离施加用作抗蚀剂的紫外线树脂的工艺,所以可以简化形成图案的工艺 ,并通过单个压印工艺形成微/纳复合图案。