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91. 发明授权

US07359036B2 Imaging system, in particular for a microlithographic projection exposure apparatus 有权
标题翻译：成像系统，特别是用于微光刻投影曝光装置
公开(公告)号：US07359036B2
公开(公告)日：2008-04-15
申请号：US11441482
申请日：2006-05-26
申请人： Aurelian Dodoc
发明人： Aurelian Dodoc
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70225 , G03F7/70275
摘要： The invention concerns imaging systems, in particular for a microlithographic projection exposure apparatus, for imaging a mask which can be positioned in an object plane of the imaging system on to a photosensitive layer which can be positioned in an image plane of the imaging system. An imaging system according to the invention comprises: an object plane-side subsystem which produces a first intermediate image with an object plane-side imaging scale βo, at least one further subsystem which produces a further intermediate image between the first intermediate image and the image plane, and an image plane-side subsystem which images the further intermediate image into the image plane with an image plane-side imaging scale βi, wherein the condition 0.75≦βo*βi≦1.25 is satisfied.
摘要翻译：本发明涉及用于成像系统，特别是用于微光刻投影曝光设备，用于将可以位于成像系统的物平面中的掩模成像到可位于成像系统的图像平面中的感光层上。根据本发明的成像系统包括：物平面侧子系统，其产生具有物平面侧成像比例尺的第一中间图像，至少一个另外的子系统，其产生另外的中间图像在第一中间图像和图像平面之间，以及图像平面侧子系统，其将另外的中间图像成像到具有图像平面侧成像比例β的像平面中，其中条件0.75 < =β <β> <= 1.25。

92. 发明申请

US20080007822A1 High-na projection objective 有权
标题翻译：高na投影目标
公开(公告)号：US20080007822A1
公开(公告)日：2008-01-10
申请号：US11797571
申请日：2007-05-04
申请人： Aurelian Dodoc
发明人： Aurelian Dodoc
IPC分类号： G02B17/08
CPC分类号： G03F7/70225 , G03F7/70275
摘要： A catadioptric projection objective for imaging a pattern provided in an object surface onto an image surface of the projection objective has an object-side imaging subsystem for creating a final intermediate image closest to the image surface from radiation coming from the object surface and an image-side imaging subsystem for directly imaging the final intermediate image onto the image surface. The image-side imaging subsystem includes a last optical element closest to the image surface and is designed for creating a convergent beam having an aperture sin α≧0.8 in the last optical element. The image-side imaging subsystem includes, in this order along a propagation direction of radiation: a primary negative lens group having overall negative refractive power; an intermediate positive lens group having overall positive refractive power; a secondary negative lens group having overall negative refractive power; and a final positive lens group having overall positive refractive power and including the last optical element, where the last optical element has a convex entry surface having a radius RLOE of curvature with RLOE/NA
摘要翻译：用于将设置在物体表面中的图案成像到投影物镜的图像表面上的反射折射投影物镜具有物体侧成像子系统，用于从来自物体表面的辐射产生最靠近图像表面的最终中间图像，侧成像子系统，用于将最终中间图像直接成像到图像表面上。图像侧成像子系统包括最靠近图像表面的最后一个光学元件，并被设计用于在最后一个光学元件中创建具有孔径α> 0.8的光阑。图像侧成像子系统沿着辐射的传播方向依次包括：具有总负折射力的初级负透镜组; 具有总正正屈光力的中间正透镜组; 具有总负折射力的次级负透镜组; 以及具有总正正屈光力并包括最后光学元件的最终正透镜组，其中最后的光学元件具有具有R LOE的曲率的半径R LOE曲率的凸入射表面， SUB> / NA <40mm。

93. 发明授权

US07187503B2 Refractive projection objective for immersion lithography 有权
$Refractive projection objective for immersion lithography$
标题翻译：用于浸没光刻的折射投影物镜
公开(公告)号：US07187503B2
公开(公告)日：2007-03-06
申请号：US11011610
申请日：2004-12-15
申请人： Hans-Juergen Rostalski , Aurelian Dodoc , Alexander Epple , Helmut Beierl
发明人： Hans-Juergen Rostalski , Aurelian Dodoc , Alexander Epple , Helmut Beierl
IPC分类号： G02B9/00 , G02B9/60 , G03B27/54
CPC分类号： G03F7/70341 , G02B13/143 , G02B13/18 , G02B15/177 , G02B21/33 , G02B27/0025 , G03F7/70241
摘要： A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT/L≦0.4 holds for a distance ratio AT/L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.
摘要翻译：适用于浸没微光刻的纯折射投射物镜被设计为具有五个透镜组的单腰系统，在其中具有负屈光力的第一透镜组，具有正屈光力的第二透镜组，具有正屈光力的第二透镜组，具有提供负屈光力，具有正屈光力的第四透镜组和具有正屈光力的第五透镜组。束束狭窄收缩的收缩位置位于腰部区域。在物平面和收缩位置X之间存在腰距离AT。对于距离距离AT和投影物镜的物体距离L之间的距离比AT / L，条件AT / L <= 0.4成立。本发明的投影物镜的实施例结合大图像场达到非常高的数值孔径NA> 1.1，并且通过紧凑的总体尺寸和横向色差的良好校正来区分。

94. 发明申请

US20060109560A1 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US20060109560A1
公开(公告)日：2006-05-25
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

95. 发明授权

US09036772B2 Mirror for the EUV wavelength range, projection objective for microlithography comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective 有权
标题翻译： EUV波长范围的镜面，包含这种反射镜的微光刻的投影物镜，以及用于微光刻的投影曝光装置，包括这样的投影物镜
公开(公告)号：US09036772B2
公开(公告)日：2015-05-19
申请号：US12756456
申请日：2010-04-08
申请人： Aurelian Dodoc
发明人： Aurelian Dodoc
IPC分类号： G02B1/10 , G02B17/06 , G02B5/08 , G03F7/20
CPC分类号： G02B17/0657 , G02B5/0891 , G03F7/70316 , G03F7/70958
摘要： A mirror for the EUV wavelength range (1) having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers—forming a period—composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography (2) including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective (2).
摘要翻译：用于EUV波长范围（1）的镜子，其具有施加在衬底（S）上的层布置（P），所述层布置具有单独层的周期性序列，其中周期序列具有至少两个单独的层 - 形成周期分别由硅（Si）和钌（Ru）组成。还公开了包括这种反射镜的微光刻（2）的投影物镜，以及具有这种投射物镜（2）的微光刻的投影曝光装置。

96. 发明申请

US20100073655A1 OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置的光学系统
公开(公告)号：US20100073655A1
公开(公告)日：2010-03-25
申请号：US12628294
申请日：2009-12-01
申请人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
发明人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
IPC分类号： G03B27/42
CPC分类号： G02B3/12 , G03F7/70341
摘要： An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.
摘要翻译：微光刻投影曝光装置的光学系统包含可以安装在光学系统中并作为一个单元从其中移除的模块。该模块包含一个可完全充满液体并密封的空腔，以及在投影曝光设备的操作期间界定顶部空腔的凹曲面的光学表面。这使得可以将模块填充到光学系统外部。模块可以在那里倾斜，从而不会形成阻止完全填充的气泡，可以形成在凹曲面的光学表面之下。

97. 发明申请

US20100026978A1 PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 审中-公开
标题翻译：微波投影曝光装置的投影目标
公开(公告)号：US20100026978A1
公开(公告)日：2010-02-04
申请号：US12539136
申请日：2009-08-11
申请人： Johannes Ruoff , Aurelian Dodoc
发明人： Johannes Ruoff , Aurelian Dodoc
IPC分类号： G03B27/54 , G02B5/30
CPC分类号： G03F7/70341 , G02B17/0804 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： The disclosure relates a projection objective of a microlithographic projection exposure apparatus, as well as a related microlithographic projection exposure apparatus and method. The projection objective can include a lens of a cubically crystalline material whose crystal orientation is oriented at an angle of at most 15° relative to the optical axis of the projection objective. The projection objective can also include a polarization correction element which has at least two subelements of birefringent, optically uniaxial material and having at least one respective aspheric surface. During use of the projection objective, the polarization correction element at least partially compensates for an intrinsic birefringence of the lens.
摘要翻译：本公开涉及微光刻投影曝光装置的投影物镜，以及相关的微光刻投影曝光装置和方法。投影物镜可包括立方结晶材料的透镜，其晶体取向相对于投影物镜的光轴以至多15°的角度取向。投影物镜还可以包括偏振校正元件，该偏振校正元件具有至少两个双折射元件，光学单轴材料并具有至少一个相应的非球面表面。在投影物镜的使用期间，偏振校正元件至少部分地补偿透镜的固有双折射。

98. 发明申请

US20090021714A1 COMBINATION STOP FOR CATOPTRIC PROJECTION ARRANGEMENT 有权
标题翻译：用于投影安排的组合停止
公开(公告)号：US20090021714A1
公开(公告)日：2009-01-22
申请号：US12173595
申请日：2008-07-15
申请人： Hans-Juergen Mann , Daniel Kraehmer , Aurelian Dodoc , Toralf Gruner
发明人： Hans-Juergen Mann , Daniel Kraehmer , Aurelian Dodoc , Toralf Gruner
IPC分类号： G03B27/54
CPC分类号： G03F7/70941 , G02B5/005 , G02B17/0657 , G03F7/70233 , G03F7/7025
摘要： The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.
摘要翻译：本公开涉及一种可用于将掩模版成像到基底上的光学投影装置。投影装置包括反射元件，通过该反射元件定义光线路径。光束路径中的光瞳组合停止。组合止动件具有用作孔径光阑的第一开口（孔口）。组合挡块还具有用于允许射线路径的射线束通过的第二开口，使得组合挡块用作组合孔径光阑和杂散光挡块。此外，本公开涉及用于光学布置的相应组合停止，以及相关系统，部件和方法。

99. 发明申请

US20070258134A1 Lithography Lens System And Projection Exposure System Provided With At Least One Lithography Lens System Of This Type 有权
标题翻译：光刻镜片系统和投影曝光系统提供了这种类型的至少一个平版镜片系统
公开(公告)号：US20070258134A1
公开(公告)日：2007-11-08
申请号：US10571267
申请日：2004-07-14
申请人： Hans-Juergen Rostalski , Alexander Epple , Aurelian Dodoc , Johannes Wangler , Karl-Heinz Schuster , Joerg Schultz , Franz-Josef Stickel , Wolfgang Singer , Joachim Wietzorrek
发明人： Hans-Juergen Rostalski , Alexander Epple , Aurelian Dodoc , Johannes Wangler , Karl-Heinz Schuster , Joerg Schultz , Franz-Josef Stickel , Wolfgang Singer , Joachim Wietzorrek
IPC分类号： G02B17/00
CPC分类号： G03F7/70066 , G03F7/70241
摘要： An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.
摘要翻译：用于微光刻投影曝光系统的光学成像系统用于将布置在成像系统的物体平面中的物体场成像为布置在成像系统的图像平面中的图像场。特别是可以涉及在照明系统中使用的投影物镜或中继物镜。成像系统具有布置在物平面和图像平面之间的多个透镜，并且在每种情况下具有第一透镜表面和第二透镜表面。至少一个透镜是双非球面透镜，其中第一透镜表面和第二透镜表面是非球面。对于具有可接受的关于透镜表面的表面处理和测试的费用的双非球面透镜的情况，可以产生具有非常强的变形非球面作用的良好质量的透镜。

100. 发明授权

US07239450B2 Method of determining lens materials for a projection exposure apparatus 有权
标题翻译：确定投影曝光装置的透镜材料的方法
公开(公告)号：US07239450B2
公开(公告)日：2007-07-03
申请号：US11181694
申请日：2005-07-14
申请人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
发明人： Vladimir Kamenov , Daniel Kraehmer , Michael Totzeck , Toralf Gruner , Aurelian Dodoc
IPC分类号： G02B3/00
CPC分类号： G03F7/70891 , G02B1/02 , G02B1/08 , G02B17/0812 , G02B17/0892 , G03F7/70966
摘要： A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要翻译：描述了确定投影曝光装置的光学系统中所包含的透镜的材料的方法。首先，对于多个透镜的每个透镜，确定敏感度因子K LT / LH 。该因子是由寿命效应和透镜加热效果中的至少一种引起的各透镜对恶化的敏感性的量度。然后选择双折射氟化物晶体作为敏感度因子K LT / LH <>高于预定阈值的每个透镜的材料。这些镜头被分配到第一组透镜。对于这些透镜，确定了减少由氟化物晶体固有的双折射引起的不利影响的措施。

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