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91. 发明授权

US5959361A Dielectric pattern 失效
标题翻译：电介质图案
公开(公告)号：US5959361A
公开(公告)日：1999-09-28
申请号：US59691
申请日：1998-04-14
申请人： Yimin Huang , Tri-Rung Yew
发明人： Yimin Huang , Tri-Rung Yew
IPC分类号： H01L21/768 , H01L51/00 , H01L21/321
CPC分类号： H01L21/76832 , H01L21/76804 , H01L21/7681 , H01L21/76811
摘要： A dielectric pattern. On a substrate having a metal wiring layer formed thereon, a first dielectric layer and a first masking layer are formed. A cap insulation layer is formed on the masking layer. The first dielectric layer, the first masking layer and the cap insulation layer are penetrated through by a first opening. A second dielectric layer and a second masking layer are formed on the cap insulation layer. The second dielectric layer and the second masking layer are penetrated through by a second opening. The first and the second openings are contiguous without intermittence.
摘要翻译：电介质图案。在其上形成有金属布线层的基板上，形成第一介电层和第一掩模层。在掩模层上形成盖绝缘层。第一介电层，第一掩模层和盖绝缘层穿过第一开口。第二介电层和第二掩模层形成在盖绝缘层上。第二介电层和第二掩蔽层穿过第二开口。第一和第二开口是连续的而不间断。

92. 发明授权

US08609981B2 P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium 有权
标题翻译：用于太阳能电池的P型透明导电氧化物，其包含掺杂有铟的三氧化钼
公开(公告)号：US08609981B2
公开(公告)日：2013-12-17
申请号：US13104744
申请日：2011-05-10
申请人： Han-Yi Chen , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
发明人： Han-Yi Chen , Chia-Hsiang Chen , Huan-Chieh Su , Kuo-Liang Liu , Tri-Rung Yew
IPC分类号： H01L31/00 , H01B1/02 , H01B1/08
CPC分类号： H01B1/08 , B82Y30/00 , C01G39/02 , C01P2002/54 , C01P2004/16 , C01P2004/17 , C01P2006/40 , H01G9/2031 , H01G9/2059 , H01L31/022466 , H01L31/035227 , H01L31/03529 , H01L31/072 , H01L31/1884 , H01L51/442 , Y02E10/50
摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.
摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。因此，产生p型透明导电材料。该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。

93. 发明授权

US08368057B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08368057B2
公开(公告)日：2013-02-05
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L29/08 , H01L51/00
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

94. 发明申请

US20090325370A1 Field-effect transistor structure and fabrication method thereof 审中-公开
标题翻译：场效应晶体管结构及其制造方法
公开(公告)号：US20090325370A1
公开(公告)日：2009-12-31
申请号：US12584401
申请日：2009-09-03
申请人： Tsung-Yeh Yang , Tri-Rung Yew
发明人： Tsung-Yeh Yang , Tri-Rung Yew
IPC分类号： H01L21/28
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0545
摘要： A field-effect transistor (FET) structure is provided. The FET structure includes a gate substrate, a dielectric layer, conductive electrodes, and a carbon nanotube (CNT). The gate substrate is made of a conductive material. The dielectric layer is disposed on the substrate. The conductive electrodes are disposed on the dielectric layer, and contain nickel and chromium. The CNT is disposed on the dielectric layer and electrically connects two conductive electrodes
摘要翻译：提供场效应晶体管（FET）结构。 FET结构包括栅极基板，电介质层，导电电极和碳纳米管（CNT）。栅极衬底由导电材料制成。电介质层设置在基板上。导电电极设置在电介质层上，并含有镍和铬。 CNT布置在电介质层上并电连接两个导电电极

95. 发明申请

US20090191616A1 Biosensor structure and fabricating method thereof 审中-公开
标题翻译：生物传感器结构及其制造方法
公开(公告)号：US20090191616A1
公开(公告)日：2009-07-30
申请号：US12231071
申请日：2008-08-27
申请人： Yi-Chun Lu , Tri-Rung Yew , Hwan-You Chang , Ya-Shuan Chuang
发明人： Yi-Chun Lu , Tri-Rung Yew , Hwan-You Chang , Ya-Shuan Chuang
IPC分类号： C12M1/00
CPC分类号： G01N33/48728
摘要： A biosensor structure and a method for fabricating the same are described. The biosensor structure for detecting at least a single cell includes a substrate with an insulating surface, a conductive layer and a plurality of capture molecules. The conductive layer is disposed on the substrate, and has a first pattern and a second pattern separated from each other. The first pattern includes a plurality of first finger configurations, and the second pattern includes a plurality of second finger configurations, so as to form interdigitated array. The capture molecules are immobilized on the conductive layer, such that the cell that is bound specifically to the capture molecules on two adjacent first and second finger configurations is detected. The biosensor structure is feasible for real-time (
摘要翻译：对生物传感器结构及其制造方法进行说明。用于检测至少单个电池的生物传感器结构包括具有绝缘表面的基板，导电层和多个捕获分子。导电层设置在基板上，并且具有彼此分离的第一图案和第二图案。第一图案包括多个第一手指配置，并且第二图案包括多个第二手指配置，以便形成相互指向的数组。捕获分子被固定在导电层上，使得在两个相邻的第一和第二手指配置上特异性结合捕获分子的细胞被检测。生物传感器结构对于单个细胞的实时（<3分钟），特异性和定量靶向细胞检测是可行的。

96. 发明申请

US20080067681A1 INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：互连结构及其制造方法
公开(公告)号：US20080067681A1
公开(公告)日：2008-03-20
申请号：US11756853
申请日：2007-06-01
申请人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
发明人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53276 , H01L21/28562 , H01L21/76849 , H01L21/76879 , H01L23/53238 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： An interconnection structure is provided. The interconnection structure includes a substrate, a conductive barrier layer, a dielectric layer and a carbon nanotube. A conductive region is disposed in the substrate. The conductive barrier layer is disposed over the conductive region and the conductive barrier layer includes iron, cobalt or nickel. The dielectric layer is disposed on the substrate. The carbon nanotube is disposed in the dielectric layer to electrically connect with the conductive barrier layer.
摘要翻译：提供互连结构。互连结构包括基板，导电阻挡层，电介质层和碳纳米管。导电区域设置在基板中。导电阻挡层设置在导电区域之上，导电阻挡层包括铁，钴或镍。电介质层设置在基板上。碳纳米管设置在电介质层中以与导电阻挡层电连接。

97. 发明申请

US20070238318A1 Method of fabricating a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070238318A1
公开(公告)日：2007-10-11
申请号：US11510294
申请日：2006-08-25
申请人： Hui-Lin Hsu , Tri-Rung Yew , Po-Yuan Lo , Zing-Way Pei
发明人： Hui-Lin Hsu , Tri-Rung Yew , Po-Yuan Lo , Zing-Way Pei
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/052 , C08L65/00 , C08L79/02 , H01L51/0036
摘要： A method of fabricating a semiconductor device is provided. The method of fabricating the semiconductor device comprises a substrate. A polyacrylonitrile (PAN) powder is dissolved in a solvent and the solvent is heated to form a PAN solution. The PAN solution is cooled down and the PAN solution is then formed on the substrate. The PAN solution is allowed to stand and the solvent in the PAN solution is then removed to form a PAN dielectric layer on the substrate. A patterned conductive layer is formed on the PAN dielectric layer.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括衬底。将聚丙烯腈（PAN）粉末溶解在溶剂中，加热溶剂形成PAN溶液。将PAN溶液冷却，然后在基板上形成PAN溶液。使PAN溶液静置，然后除去PAN溶液中的溶剂，以在基材上形成PAN介电层。在PAN介电层上形成有图案的导电层。

98. 发明授权

US07067917B2 Gradient barrier layer for copper back-end-of-line technology 有权
标题翻译：用于铜后端技术的梯度屏障层
公开(公告)号：US07067917B2
公开(公告)日：2006-06-27
申请号：US10337292
申请日：2003-01-07
申请人： Fu-Tai Liou , Cheng-Yu Hung , Tri-Rung Yew
发明人： Fu-Tai Liou , Cheng-Yu Hung , Tri-Rung Yew
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76846 , C23C14/027 , C23C14/0641 , C23C16/029 , C23C16/34 , H01L21/2855 , H01L21/28556 , H01L21/76805 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , Y10T428/26 , H01L2924/00
摘要： The present invention is directed to a structure of a gradient barrier layer. The gradient barrier with a composite structure of metal/metal salt of different composition/metal such as Ta/TaxN1−x/TaN/TaxN1−x/Ta (tantalum/tantalumx nitride1−x/tantalum nitride/tantalumx nitride1−x/tantalum) is proposed to replace the conventional barrier for copper metallization. The gradient barrier can be formed in a chemical vapor deposition (CVD) process or a multi-target physical vapor deposition (PVD) process. For CVD process, using the characteristics of well-controlled reaction gas injection, the ratio of tantalum (Ta) and nitrogen (N) can be modulated gradually to form the gradient barrier. For the multi-target PVD process, the gradient barrier is formed by depositing multi-layers of different composition TaxN1−x films. After subsequent thermal cycle processes such as metal alloy, the inter-layer diffusion occurs and a more smooth distribution of Ta and N is achieved for the gradient barrier. The advantages of forming the gradient barrier include a well-controlled process, a strong adhesion between via and landing metal, more uniform step coverage, and less brittle to reduce crack.
摘要翻译：本发明涉及梯度阻挡层的结构。具有不同成分/金属的金属/金属盐的复合结构的梯度屏障，例如Ta / Ta x N 1-x / TaN / Ta x x 1 / x 1 / x 3/1 / x 2/1 / x 3 / 提出了替代传统的铜金属化屏障的方法。梯度屏障可以在化学气相沉积（CVD）工艺或多目标物理气相沉积（PVD）工艺中形成。对于CVD工艺，使用良好控制的反应气体注入特性，可以逐渐调节钽（Ta）和氮（N）的比例，形成梯度屏障。对于多目标PVD工艺，通过沉积多层不同组成的Ta x N 1 x-x膜形成梯度屏障。在随后的热循环过程如金属合金之后，发生层间扩散，并且对梯度屏障实现了更平稳的Ta和N分布。形成梯度屏障的优点包括良好控制的工艺，通孔和着陆金属之间的牢固粘附，更均匀的台阶覆盖，并且较不易碎以减少裂纹。

99. 发明授权

US06794752B2 Bonding pad structure 有权
标题翻译：粘接垫结构
公开(公告)号：US06794752B2
公开(公告)日：2004-09-21
申请号：US09864055
申请日：2001-05-23
申请人： Ellis Lee , Yimin Huang , Tri-Rung Yew
发明人： Ellis Lee , Yimin Huang , Tri-Rung Yew
IPC分类号： H01L2348
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/13099 , H01L2224/45144 , H01L2224/48624 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.
摘要翻译：焊盘结构在铜层上具有钝化层，其具有用于暴露铜层的一部分的焊盘窗口，与焊盘窗口的轮廓保形的阻挡层和位于焊盘窗口中的铝焊盘。金属层可以是铝，铝合金或铝主导层，用于在铜层和接合线之间提供更好的粘合性能。

100. 发明授权

US06361929B1 Method of removing a photo-resist layer on a semiconductor wafer 有权
标题翻译：去除半导体晶片上的光致抗蚀剂层的方法
公开(公告)号：US06361929B1
公开(公告)日：2002-03-26
申请号：US09373755
申请日：1999-08-13
申请人： Hsein-Ta Chung , Yi-Yu Hsu , Tong-Yu Chen , Tri-Rung Yew
发明人： Hsein-Ta Chung , Yi-Yu Hsu , Tong-Yu Chen , Tri-Rung Yew
IPC分类号： G03F736
CPC分类号： G03F7/427 , G03F7/42
摘要： The present invention relates to a method of removing a photo-resist layer from a semiconductor wafer. The semiconductor wafer comprises an inter-metal dielectric layer (IMD), and a photo-resist layer positioned on the IMD. The method comprises performing a dry cleaning process by injecting a nitrogen-containing gas into an oxygen-free environment and utilizing a plasma reaction to remove most of the photo-resist layer, and performing a wet cleaning process to completely remove the photo-resist layer.
摘要翻译：本发明涉及从半导体晶片去除光致抗蚀剂层的方法。半导体晶片包括金属间介电层（IMD）和位于IMD上的光致抗蚀剂层。该方法包括通过将含氮气体注入无氧环境并利用等离子体反应去除大部分光致抗蚀剂层进行干洗处理，并进行湿式清洗处理以完全除去光致抗蚀剂层。

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