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1. 发明授权

US08368057B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08368057B2
公开(公告)日：2013-02-05
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L29/08 , H01L51/00
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

2. 发明申请

US20080067681A1 INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：互连结构及其制造方法
公开(公告)号：US20080067681A1
公开(公告)日：2008-03-20
申请号：US11756853
申请日：2007-06-01
申请人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
发明人： Tzu-chun Tseng , Tri-Rung Yew , Chung-Min Tsai
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53276 , H01L21/28562 , H01L21/76849 , H01L21/76879 , H01L23/53238 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： An interconnection structure is provided. The interconnection structure includes a substrate, a conductive barrier layer, a dielectric layer and a carbon nanotube. A conductive region is disposed in the substrate. The conductive barrier layer is disposed over the conductive region and the conductive barrier layer includes iron, cobalt or nickel. The dielectric layer is disposed on the substrate. The carbon nanotube is disposed in the dielectric layer to electrically connect with the conductive barrier layer.
摘要翻译：提供互连结构。互连结构包括基板，导电阻挡层，电介质层和碳纳米管。导电区域设置在基板中。导电阻挡层设置在导电区域之上，导电阻挡层包括铁，钴或镍。电介质层设置在基板上。碳纳米管设置在电介质层中以与导电阻挡层电连接。

3. 发明申请

US20120135598A1 METHOD FOR FABRICATING INTERCONNECTIONS WITH CARBON NANOTUBES 有权
标题翻译：用碳纳米管制备互连的方法
公开(公告)号：US20120135598A1
公开(公告)日：2012-05-31
申请号：US13094388
申请日：2011-04-26
申请人： Hsin-wei WU , Chung-Min Tsai , Tri-Rung Yew
发明人： Hsin-wei WU , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L21/768
CPC分类号： H01L23/53276 , H01L21/76849 , H01L21/76876 , H01L21/76879 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.
摘要翻译：本发明的制造与碳纳米管的互连的方法包括以下步骤：在与基板连接的孔的周围形成包含催化剂层和上覆盖层的双层; 并在上覆盖层覆盖碳纳米管的催化层上生长碳纳米管。本发明在催化层和上覆盖层之间生长碳纳米管。上覆盖层保护催化层不被氧化，从而增强碳纳米管的生长。碳纳米管分别通过催化层和上覆盖层与下基板和上导电线连接，导致较低的接触电阻。此外，上覆盖层还用作金属扩散阻挡层，以防止金属通过扩散或其它方法扩散到其它材料。

4. 发明授权

US07858147B2 Interconnect structure and method of fabricating the same 有权
标题翻译：互连结构及其制造方法
公开(公告)号：US07858147B2
公开(公告)日：2010-12-28
申请号：US12229233
申请日：2008-08-20
申请人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
发明人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
IPC分类号： B05D5/12 , C23C16/00 , B05D3/00 , C23C14/00
CPC分类号： H01L21/76823 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T428/12625 , Y10T428/24851 , H01L2924/00
摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
摘要翻译：描述制造互连结构的方法。提供基板。在基板上形成有图案的界面金属层。形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞的绝缘层，并与界面金属层电连接。

5. 发明申请

US20090197113A1 Interconnect structure and method of fabricating the same 有权
标题翻译：互连结构及其制造方法
公开(公告)号：US20090197113A1
公开(公告)日：2009-08-06
申请号：US12229233
申请日：2008-08-20
申请人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
发明人： Yu-Tsung Wu , Jen-Hong Huang , Chung-Min Tsai , Huan-Chieh Su , Tri-Rung Yew
IPC分类号： H01L21/70
CPC分类号： H01L21/76823 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T428/12625 , Y10T428/24851 , H01L2924/00
摘要： A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
摘要翻译：描述制造互连结构的方法。提供基板。在基板上形成有图案的界面金属层。形成覆盖基板和界面金属层的无定形碳绝缘层或碳基绝缘层。在与界面金属层电连接的无定形碳或碳基绝缘层中形成导电碳线或插塞。还描述了一种互连结构，包括衬底，衬底上的图案化界面金属层，衬底上的无定形碳绝缘层或碳基绝缘层，以及设置在无定形碳或碳中的导电碳线或插塞的绝缘层，并与界面金属层电连接。

6. 发明授权

US08461037B2 Method for fabricating interconnections with carbon nanotubes 有权
标题翻译：制造与碳纳米管互连的方法
公开(公告)号：US08461037B2
公开(公告)日：2013-06-11
申请号：US13094388
申请日：2011-04-26
申请人： Hsin-wei Wu , Chung-Min Tsai , Tri-Rung Yew
发明人： Hsin-wei Wu , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L21/00
CPC分类号： H01L23/53276 , H01L21/76849 , H01L21/76876 , H01L21/76879 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.
摘要翻译：本发明的制造与碳纳米管的互连的方法包括以下步骤：在与基板连接的孔的周围形成包含催化剂层和上覆盖层的双层; 并在上覆盖层覆盖碳纳米管的催化层上生长碳纳米管。本发明在催化层和上覆盖层之间生长碳纳米管。上覆盖层保护催化层不被氧化，从而增强碳纳米管的生长。碳纳米管分别通过催化层和上覆盖层与下基板和上导电线连接，导致较低的接触电阻。此外，上覆盖层还用作金属扩散阻挡层，以防止金属通过扩散或其它方法扩散到其它材料。

7. 发明申请

US20110193065A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20110193065A1
公开(公告)日：2011-08-11
申请号：US12807620
申请日：2010-09-09
申请人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
发明人： Yu-Ping Wang , Heng-Wen Ting , Chung-Min Tsai , Tri-Rung Yew
IPC分类号： H01L51/30
CPC分类号： H01L51/0053 , H01L51/0545
摘要： An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification.
摘要翻译：有机薄膜晶体管包括：栅极，栅极绝缘膜，源电极，漏电极和有机活性层。有机活性层包括由说明书中定义的下式（A）表示的有机半导体化合物。

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