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91. 发明授权

US5822347A Semiconductor light emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5822347A
公开(公告)日：1998-10-13
申请号：US589488
申请日：1996-01-22
申请人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
发明人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/46 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19 , H01L29/22
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/465 , H01S5/18341 , H01S5/327 , H01S5/347 , H01L33/105 , H01S2301/166 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.
摘要翻译：在II-VI族半导体激光器中，在n型GaAs衬底上依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。在p型ZnSe层以及通过蚀刻GaAs衬底暴露的n型ZnSe层的表面上，设置分别由用于获得激光振荡的多晶SiO 2层和多晶TiO 2层构成的多片反射镜。此外，分别设置p型AuPd电极和n型AuGeNi电极。或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。此外，分别设置p型AuPd电极和n型In电极。

92. 发明授权

US5274248A Light-emitting device with II-VI compounds 失效
标题翻译：具有II-VI化合物的发光装置
公开(公告)号：US5274248A
公开(公告)日：1993-12-28
申请号：US892888
申请日：1992-06-03
申请人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
发明人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/06 , H01L33/28
CPC分类号： H01L33/285 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/06
摘要： The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alternately laminating a p-type ZnTe layer 112a and a non-doped ZnS layer 112b. And, a positive electrode 113 and a negative electrode 114 are provided on the multiquantum well structure 112 and the ZnS crystal, respectively. By applying forward bias voltage on this light-emitting device, electrons are injected from the n-type ZnS substrate to the multiquantum well structure 112. Then, these electrons are recombined with holes in the multiquantum well structure 112, so as to emit blue luminescence light. Thus, it becomes possible to easily and reproducibly obtain a p-conduction type hole injection layer so as to realize highly concentrated carrier injection and obtain high efficiency in emitting blue luminescence light.
摘要翻译：本发明提供一种形成p型空穴注入层并具有高发光效率的p-n结型蓝色发光元件。在n导电型ZnS基板111上形成交替层叠p型ZnTe层112a和非掺杂ZnS层112b的多量子阱结构112。并且，在多量子阱结构体112和ZnS晶体上分别设置有正极113和负极114。通过在该发光器件上施加正向偏置电压，将电子从n型ZnS衬底注入到多量子阱结构112中。然后，这些电子与多量子阱结构112中的空穴重新结合，以发射蓝色发光光。因此，可以容易且可重复地获得p导电型空穴注入层，从而实现高度集中的载流子注入，并且获得发射蓝色发光的高效率。

93. 发明授权

US08030677B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08030677B2
公开(公告)日：2011-10-04
申请号：US12375118
申请日：2007-07-13
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

94. 发明申请

US20110198568A1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译：氮化物半导体元件及其生产方法
公开(公告)号：US20110198568A1
公开(公告)日：2011-08-18
申请号：US13125367
申请日：2010-04-05
申请人： Akira Inoue , Masaki Fujikane , Toshiya Yokogawa
发明人： Akira Inoue , Masaki Fujikane , Toshiya Yokogawa
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L29/045 , H01L24/14 , H01L24/17 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/05124 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01088 , H01L2924/12032 , H01L2924/12041 , H01L2924/15787 , H01L2924/00 , H01L2924/00014
摘要： A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.
摘要翻译：本发明的发光装置包括：安装基座260，其具有线265; 以及安装在安装基座260上的氮化物系半导体发光装置倒装芯片。氮化物系半导体发光装置100具备：具有m面面12的GaN基基板10，半导体层叠结构体设置在GaN基基板10的m面表面12上，以及设置在半导体多层结构20上的电极30.电极30包括Mg层32.Mg层32与 p型半导体区域。电极30与线265耦合。

95. 发明授权

US07852891B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07852891B2
公开(公告)日：2010-12-14
申请号：US12258881
申请日：2008-10-27
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

96. 发明申请

US20090159921A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光元件，氮化物半导体发光器件及制造这种氮化物半导体发光器件的方法
公开(公告)号：US20090159921A1
公开(公告)日：2009-06-25
申请号：US12159786
申请日：2006-12-27
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01L21/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 2 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译：根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构它们之间。具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极2和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。

97. 发明授权

US07501667B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07501667B2
公开(公告)日：2009-03-10
申请号：US11084526
申请日：2005-03-21
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Akihiko Ishibashi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译：提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

98. 发明申请

US20060145165A1 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20060145165A1
公开(公告)日：2006-07-06
申请号：US11359480
申请日：2006-02-23
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

99. 发明授权

US06917457B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06917457B2
公开(公告)日：2005-07-12
申请号：US10889027
申请日：2004-07-13
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成网状整体，在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

100. 发明授权

US06690035B1 Semiconductor device having an active region of alternating layers 有权
标题翻译：具有交替层的有源区的半导体器件
公开(公告)号：US06690035B1
公开(公告)日：2004-02-10
申请号：US09980598
申请日：2001-11-01
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Osamu Kusumoto , Makoto Kitabatake , Takeshi Uenoyama
IPC分类号： H01L310312
CPC分类号： H01L29/155 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/365 , H01L29/812 , H01L29/872
摘要： An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers 23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.
摘要翻译：有源区30形成在由SiC，GaN或GaAs制成的基板3上，例如通过交替层叠厚度例如约50nm的未掺杂层22和厚度为例如约50nm的n型掺杂层23 （例如，约10nm），其足够薄以使得能够实现量子效应。由于量子效应，载体从n型掺杂层23的子带扩散到未掺杂层22中。在具有低浓度杂质的未掺杂层22中，杂质的散射减少，因此可以获得高的载流子迁移率，并且当整个有源区30已经耗尽时，可以有大的耐受电压值通过利用在有源区域30中不再具有载流子的事实，由于未掺杂层22而获得。

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