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1. 发明授权

US06778308B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06778308B2
公开(公告)日：2004-08-17
申请号：US10652044
申请日：2003-09-02
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1015
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成整体的网状形状，以在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

2. 发明授权

US06917457B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06917457B2
公开(公告)日：2005-07-12
申请号：US10889027
申请日：2004-07-13
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成网状整体，在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

3. 发明授权

US07009216B2 Semiconductor light emitting device and method of fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07009216B2
公开(公告)日：2006-03-07
申请号：US10718581
申请日：2003-11-24
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/187 , H01S5/028 , H01S5/105 , H01S5/124 , H01S5/2201 , H01S5/42
摘要： A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).
摘要翻译：本发明的半导体发光器件包括n型InP衬底（1）和在n型InP衬底（1）上形成为条形的条形结构（10），并且由n型InP衬底下包层（3），在与n型InP衬底（1）平行的方向上具有谐振器的有源层（4）和p型InP上覆层（5）。条状结构（10）具有光子晶体结构（2），其具有矩形格子状的凹部9，并且配置有光子晶体结构（2）的凹部（9）的方向与谐振器方向。条状上电极（6）形成在条状结构（10）上以沿谐振器方向延伸。如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底（1）的方向辐射光。

4. 发明授权

US06953954B2 Plasma oscillation switching device 失效
标题翻译：等离子体振荡开关装置
公开(公告)号：US06953954B2
公开(公告)日：2005-10-11
申请号：US10745567
申请日：2003-12-29
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki , Toshiya Yokogawa
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki , Toshiya Yokogawa
IPC分类号： H01L29/812 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/80 , H01L29/43
CPC分类号： H01L29/1029 , H01L29/2003 , H01L29/7785
摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.
摘要翻译：本发明的等离子体振荡切换装置包括半导体基板101，第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a，通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。

5. 发明授权

US6104738A Semiconductor laser and process for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US6104738A
公开(公告)日：2000-08-15
申请号：US894763
申请日：1997-11-13
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui , Yuichi Inaba
IPC分类号： H01S5/042 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/323 , H01S3/19 , H01S3/08
CPC分类号： H01S5/10 , H01S2301/18 , H01S5/0425 , H01S5/1014 , H01S5/1064 , H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1218 , H01S5/1225 , H01S5/1228 , H01S5/20 , H01S5/2036 , H01S5/2275 , H01S5/32391
摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1
摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触层9形成在其上。半导体激光装置100的振荡波长约为1.3μm。有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

6. 发明授权

US5856207A Method for producing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5856207A
公开(公告)日：1999-01-05
申请号：US667643
申请日：1996-06-20
申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
IPC分类号： H01L29/15 , H01S5/22 , H01S5/227 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01L29/155 , H01S5/227 , H01S5/2205 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34313 , H01S5/3434 , Y10S148/095
摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
摘要翻译：本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

7. 发明授权

US6110756A Method for producing semiconductor laser 有权
标题翻译：半导体激光器的制造方法
公开(公告)号：US6110756A
公开(公告)日：2000-08-29
申请号：US132078
申请日：1998-08-10
申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
IPC分类号： H01L29/15 , H01S5/22 , H01S5/227 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01L29/155 , H01S5/227 , H01S5/2205 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34313 , H01S5/3434 , Y10S148/095
摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
摘要翻译：本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

8. 发明授权

US5764682A Distributed feedback semiconductor laser and method for fabricating the same 失效
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US5764682A
公开(公告)日：1998-06-09
申请号：US606455
申请日：1996-02-23
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34 , H01S3/19
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

9. 发明授权

US5621747A Multi quantum well semiconductor laser and optical communication system using the same 失效
标题翻译：多量子阱半导体激光器和光通信系统使用相同
公开(公告)号：US5621747A
公开(公告)日：1997-04-15
申请号：US366027
申请日：1994-12-29
申请人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
发明人： Masahiro Kitoh , Nobuyuki Otsuka , Masato Ishino , Yasushi Matsui
IPC分类号： H01S5/062 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/3434 , H01S2301/06 , H01S2302/00 , H01S5/06226 , H01S5/3407 , H01S5/34306
摘要： A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.
摘要翻译：多量子阱半导体激光器包括InP衬底和形成在InP衬底上的多层结构，激光在1.29μm至1.33μm波长处，其中多层结构至少包括多量子阱活性层，包括InGaAsP阱层和InGaAsP势垒层的多量子阱有源层交替设置，InGaAsP势垒层与InP衬底晶格匹配，并且InGaAsP势垒层的带隙波长基本上等于1.05μm。

10. 发明申请

US20060231862A1 Ballistic semiconductor device 失效
标题翻译：弹道半导体器件
公开(公告)号：US20060231862A1
公开(公告)日：2006-10-19
申请号：US10542063
申请日：2004-04-14
申请人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
发明人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/2003 , H01L29/7376
摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.
摘要翻译：本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103）在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层（307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

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