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1. 发明申请

US20110215340A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

2. 发明授权

US07880192B2 Nitride semiconductor light emitting element and nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光元件和氮化物半导体发光器件
公开(公告)号：US07880192B2
公开(公告)日：2011-02-01
申请号：US12159786
申请日：2006-12-27
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
IPC分类号： H01L21/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译：根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构它们之间。具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。

3. 发明申请

US20090022193A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

4. 发明授权

US08030677B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08030677B2
公开(公告)日：2011-10-04
申请号：US12375118
申请日：2007-07-13
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

5. 发明申请

US20090159921A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光元件，氮化物半导体发光器件及制造这种氮化物半导体发光器件的方法
公开(公告)号：US20090159921A1
公开(公告)日：2009-06-25
申请号：US12159786
申请日：2006-12-27
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01L21/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 2 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译：根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构它们之间。具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极2和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。

6. 发明授权

US08222670B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08222670B2
公开(公告)日：2012-07-17
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

7. 发明申请

US20090294797A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20090294797A1
公开(公告)日：2009-12-03
申请号：US12375118
申请日：2007-07-13
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

8. 发明授权

US07816696B2 Nitride semiconductor device and method for manufacturing same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07816696B2
公开(公告)日：2010-10-19
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L29/267 , H01L21/332
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

9. 发明授权

US07056756B2 Nitride semiconductor laser device and fabricating method thereof 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07056756B2
公开(公告)日：2006-06-06
申请号：US10611851
申请日：2003-07-03
申请人： Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/0425
摘要： A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109) that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer (102) and the outermost surface of the p-type nitride semiconductor layer (108); a step to flatten the surface of the insulating film (109); and a step to form an n-type electrode (111) and a p-type electrode (110) electrically connected to the n-type nitride semiconductor layer (102) and the p-type nitride semiconductor layer (108), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.
摘要翻译：一种用于制造氮化物半导体激光器件的方法，包括：暴露n型氮化物半导体层（102）和p型氮化物半导体层（108）的表面的步骤; 覆盖多层半导体表面的步骤; 具有大于n型氮化物半导体层（102）的露出表面与p型氮化物半导体层（108）的最外表面之间的电平差的绝缘膜（109）; 平坦化绝缘膜（109）的表面的步骤; 以及分别形成与n型氮化物半导体层（102）和p型氮化物半导体层（108）电连接的n型电极（111）和p型电极（110）的步骤。该方法可以获得高可靠性并且具有优异的散热性能的氮化物半导体激光器件。

10. 发明授权

US06855571B1 Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor 失效
标题翻译：制造GaN基半导体激光器件的方法和用于其的半导体衬底
公开(公告)号：US06855571B1
公开(公告)日：2005-02-15
申请号：US10366722
申请日：2003-02-14
申请人： Gaku Sugahara , Atsushi Yamada , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Gaku Sugahara , Atsushi Yamada , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L21/00 , H01L21/20 , H01L33/00 , H01S5/02 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/005 , H01S5/0213 , H01S5/0655 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/00 , H01S2304/12
摘要： The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer 103 that comprises a striped pattern composed of a plurality of band-like portions 103a that are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions 103a; depositing a second GaN-based semiconductor layer 104 on the mask layer 103 by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer 104 that are exposed from the mask layer 103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers 105 to 107, an active layer 108, and a p-type GaN-based semiconductor layers 109 to 111 on the second GaN-based semiconductor layer 104; and forming a current injection region 112 directly above the band-like portion 103a while using the alignment pattern as a reference to position the current injection region.
摘要翻译：本发明提供一种制造GaN基半导体激光器件的方法，包括以下步骤：在衬底101上形成GaN基半导体层102; 在第一GaN基半导体层的表面上形成掩模层103，掩模层103包括由在宽度方向上规则排列的多个带状部分103a组成的条纹图案和通过改变规则性而形成的取向图案多个带状部分103a的一些部分; 通过选择性横向生长方法在从掩模层103暴露的第一GaN基半导体层104的部分处的起始点，在掩模层103上沉积第二GaN基半导体层104; 形成包含在第二GaN基半导体层104上的n型GaN基半导体层105至107，有源层108和p型GaN基半导体层109至111的多层半导体; 并且在使用对准图案作为基准的同时，在带状部分103a的正上方形成电流注入区域112来定位电流注入区域。

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