专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US5993076A Camera having photographing state for taking photographs and compact portable state 失效
标题翻译：具有摄影状态的照相机和紧凑便携状态的相机
公开(公告)号：US5993076A
公开(公告)日：1999-11-30
申请号：US965007
申请日：1997-11-05
申请人： Takashi Fujii , Kazunori Mizokami , Chiaki Okuhara
发明人： Takashi Fujii , Kazunori Mizokami , Chiaki Okuhara
IPC分类号： G03B7/08 , G03B17/42 , G03B17/04
CPC分类号： G03B17/425 , G03B7/0807 , G03B2217/002
摘要： When a camera is set in a portable state responsive to a photographing state detection device and a portable state detection device, film is rewound from a take-up spool chamber into a film cartridge and the take-up spool chamber is compressed in the direction of film feed to reduce the size of the camera body in the film feed direction. When the camera is set in a photographing state, the camera body is extended and the film is taken up from the film cartridge into the take-up spool chamber.
摘要翻译：当相机被设置为响应于拍摄状态检测装置和便携式状态检测装置的便携状态时，胶片从卷取卷轴室重新卷绕到暗盒中，并且卷取卷轴室沿着胶片进给，以减小相机机身在胶片进纸方向上的尺寸。当相机设置在拍摄状态时，照相机主体被延伸并且胶片被从胶卷暗盒吸入卷取卷轴室。

92. 发明授权

US5985472A Magnetostatic wave device 失效
标题翻译：静电波装置
公开(公告)号：US5985472A
公开(公告)日：1999-11-16
申请号：US876555
申请日：1997-06-16
申请人： Mikio Geho , Masaru Fujino , Takashi Fujii , Hiroshi Takagi
发明人： Mikio Geho , Masaru Fujino , Takashi Fujii , Hiroshi Takagi
IPC分类号： H01F10/24 , H01F10/32 , H01F41/28 , H01P1/215 , H01P3/00 , H03H2/00 , G11B5/66
CPC分类号： B82Y25/00 , H01F10/245 , H01F10/3209 , H01F41/28 , H03H2/001 , Y10S428/90
摘要： There is provided a magnetostatic wave device which operates even with a substitution R, A:YIG having a small film thickness and which has a wider operational frequency band. A magnetostatic wave device comprising a magnetic garnet film is provided which is made of a material expressed by a general formula: (Y.sub.1-r R.sub.r).sub.3 (Fe.sub.1-a A.sub.a).sub.5 O.sub.12 where R is at least one selected from among La, Bi, Gd and Lu; A is at least one selected from among Al, Ga, In and Sc; r and a are within the ranges 0.ltoreq.r.ltoreq.1 and 0.ltoreq.a
摘要翻译：提供了一种静电波装置，其即使使用具有较小膜厚的替代R，A：YIG也具有较宽的工作频带。提供一种包含磁性石榴石膜的静磁波装置，其由通式（Y1-rRr）3（Fe1-aAa）5O12表示的材料制成，其中R是选自La，Bi， Gd and A是选自Al，Ga，In和Sc中的至少一种; r和a分别在0

93. 发明授权

US5760572A Intermittent motion apparatus 失效
标题翻译：间歇运动装置
公开(公告)号：US5760572A
公开(公告)日：1998-06-02
申请号：US853798
申请日：1997-05-09
申请人： Harumi Takeda , Takashi Fujii
发明人： Harumi Takeda , Takashi Fujii
IPC分类号： A63H29/22 , G05F1/56 , G05F1/67 , G09F19/02 , H01L31/058 , H02J7/35 , G05F1/40
CPC分类号： H02J7/355 , H02S40/38 , Y10S323/906
摘要： A solar cell system for supplying electric energy from solar cells to loads. This solar cell system includes solar cells for converting light energy into electric energy, an electric double layer capacitor for storing the electric energy from the solar cells, and a discharge controller for causing the electric double layer capacitor to discharge electric energy to the loads intermittently in predetermined cycles while charging the electric double layer capacitor. A period of time for discharging is shorter than a period of time for charging, and a current discharged to the loads is larger than a charging current applied to the electric double layer capacitor.
摘要翻译：一种从太阳能电池向负载供电的太阳能电池系统。这种太阳能电池系统包括用于将光能转换为电能的太阳能电池，用于存储来自太阳能电池的电能的双电层电容器，以及用于使双电层电容器间歇性地将电能放电到负载的放电控制器给双电层电容器充电时预定的周期。放电时间比充电时间短，放电到负载的电流大于施加到双电层电容器的充电电流。

94. 发明授权

US5616556A Method of treating rheumatoid arthritis and osteoarthrosis using tetrahydro WS9326A 失效
标题翻译：使用四氢化合物WS9326A治疗类风湿关节炎和骨关节病的方法
公开(公告)号：US5616556A
公开(公告)日：1997-04-01
申请号：US154730
申请日：1993-11-18
申请人： Takashi Fujii , Masaaki Tomoi
发明人： Takashi Fujii , Masaaki Tomoi
IPC分类号： A61K38/00 , A61K38/04 , A61K38/08 , A61P1/00 , A61P29/00 , A61P43/00 , C07C237/42 , C07K7/06 , A61K38/12
CPC分类号： A61K38/08 , A61K38/04 , Y10S514/826
摘要： Rheumatoid arthritis and osteoarthrosis are treated by administering an effective amount of tetrahydro-WS9326A to a human being or animal suffering from rheumatoid arthritis or osteoarthrosis.
摘要翻译：通过向患有类风湿性关节炎或骨关节病的人或动物施用有效量的四氢-WS9326A来治疗类风湿性关节炎和骨关节病。

95. 发明授权

US5601935A Surface magnetostatic wave device 失效
标题翻译：表面静磁波装置
公开(公告)号：US5601935A
公开(公告)日：1997-02-11
申请号：US302348
申请日：1994-09-07
申请人： Masaru Fujino , Takashi Fujii , Makoto Kumatoriya , Takenori Sekijima , Hiroshi Takagi
发明人： Masaru Fujino , Takashi Fujii , Makoto Kumatoriya , Takenori Sekijima , Hiroshi Takagi
IPC分类号： H01F10/24 , H03H2/00 , G11B5/66
CPC分类号： H01F10/245 , H03H2/001 , Y10S428/90
摘要： A surface magnetostatic wave device includes an Fe-containing garnet single crystal film grown on a gadolinium gallium garnet substrate. The crystallographic plane azimuth of the gadolinium gallium garnet substrate can be one of a (110) plane, a (100) plane, and a (211) plane. The device achieves both a reduced saturation magnetization and a reduced anisotropic magnetic field to thereby minimize the lowest frequency in the propagation band.
摘要翻译：表面静磁波装置包括在钆镓石榴石基板上生长的含Fe石榴石单晶膜。钆镓石榴石基体的晶面方位可以是（110）面，（100）面和（211）面之一。该装置实现了降低的饱和磁化强度和减小的各向异性磁场，从而使传播带中的最低频率最小化。

96. 发明授权

US5466388A Material for magnetostatic-wave devices 失效
标题翻译：静磁波器件材料
公开(公告)号：US5466388A
公开(公告)日：1995-11-14
申请号：US238252
申请日：1994-05-04
申请人： Takashi Fujii , Masaru Fujino , Takenori Sekijima , Hiroshi Takagi
发明人： Takashi Fujii , Masaru Fujino , Takenori Sekijima , Hiroshi Takagi
IPC分类号： C30B29/28 , C04B35/26 , H01F10/24
CPC分类号： H01F10/245 , C04B35/2675
摘要： A material for magnetostatic wave devices comprises a thin single-crystalline magnetic film consisting essentially of a magnetic garnet containing iron, and at least one element of zirconium and hafnium incorporated therein. The content of zirconium and/or hafnium is less than or equal to 1000 wt.ppm.
摘要翻译：用于静磁波器件的材料包括基本由含有铁的石榴石和至少一种锆和铪的元素组成的薄单晶磁性膜。锆和/或铪的含量小于或等于1000重量ppm。

97. 发明授权

US5432315A Plasma process apparatus including ground electrode with protection film 失效
标题翻译：等离子体处理装置，包括具有保护膜的接地电极
公开(公告)号：US5432315A
公开(公告)日：1995-07-11
申请号：US203035
申请日：1994-02-28
申请人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
发明人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
IPC分类号： H01J37/32 , H05H1/46 , B23K10/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing apparatus includes a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced, a sample table, disposed in the vacuum chamber, to which an AC voltage is applied, a microwave generating device for generating microwaves and introducing the microwaves towards a surface to be processed of a sample located on the sample table, a magnetic field generating device for generating a magnetic field in the vacuum chamber, an insulator disposed on a part of the vacuum chamber exposed to a plasma produced in the vacuum chamber by interaction of the processing gas, the microwaves, and the magnetic field, and a ground electrode disposed in the vacuum chamber at a place which is on a microwave introduction side of the vacuum chamber with respect to the surface of the sample table on which the sample is placed, a surface of the ground electrode being covered by a semiconducting thin film.
摘要翻译：微波等离子体处理装置包括真空室，其被抽真空至预定压力并被加入到处理气体中，设置在施加有交流电压的真空室中的样品台，用于产生微波的微波产生装置，将微波引导到位于样品台上的样品的待处理表面，用于在真空室中产生磁场的磁场产生装置，设置在暴露于等离子体中产生的等离子体的真空室的一部分上的绝缘体通过处理气体，微波和磁场的相互作用的真空室和设置在真空室中相对于样品台的表面在微波引入侧的位置处的真空室中的接地电极样品被放置，接地电极的表面被半导体薄膜覆盖。

98. 发明授权

US5300822A Power-on-reset circuit 失效
标题翻译：上电复位电路
公开(公告)号：US5300822A
公开(公告)日：1994-04-05
申请号：US997191
申请日：1992-12-28
申请人： Eiichi Sugahara , Takashi Fujii
发明人： Eiichi Sugahara , Takashi Fujii
IPC分类号： H03K17/22 , G05F3/26
CPC分类号： H03K17/223
摘要： A power-on-reset circuit includes a plurality of MOS transistors and a first depletion type N-channel MOS transistor connected in series to an input terminal of a current mirror circuit. A capacitor is connected between the input terminal and a voltage supply terminal. A second depletion type N-channel MOS transistor having a low current driving capacity is connected to an output terminal of the current mirror circuit. The degree of integration can be increased by constituting an integrating circuit with depletion type N-channel MOS transistors in place of a resistor. In addition, the voltage supply voltage is compared to the sum of the threshold voltage of the plurality of MOS transistors. This makes it possible to initialize the internal circuit positively even if the rise time of the voltage supply voltage becomes larger than the time constant of the integrating circuit.
摘要翻译：上电复位电路包括与电流镜电路的输入端串联连接的多个MOS晶体管和第一耗尽型N沟道MOS晶体管。电容器连接在输入端子和电源端子之间。具有低电流驱动能力的第二耗尽型N沟道MOS晶体管连接到电流镜电路的输出端。可以通过构成具有耗尽型N沟道MOS晶体管的积分电路代替电阻来增加积分度。此外，将电源电压与多个MOS晶体管的阈值电压之和进行比较。这使得即使电源电压的上升时间变得大于积分电路的时间常数，也能够正确地初始化内部电路。

99. 发明授权

US5110408A Process for etching 失效
标题翻译：蚀刻工艺
公开(公告)号：US5110408A
公开(公告)日：1992-05-05
申请号：US658254
申请日：1991-02-20
申请人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
发明人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
摘要翻译：本发明涉及栅极膜，钨膜，硅膜等的蚀刻。在本发明中，使用包括由还原氟化物气体，烃气体和卤素组成的混合物的蚀刻气体具有比待蚀刻材料更大的原子直径的气体或由还原性氟化物气体和含Cl的烃气体组成的混合物，该方法包括用蚀刻气体进行各向异性腐蚀蚀刻的步骤（还原氟化物气体），通过沉积气体（烃气体）形成保护膜的步骤，以及通过与保护膜反应的气体（卤素气体）除去形成为保护膜的多余的沉积物的步骤或含Cl的氢气），其中通过在侧壁上形成保护膜进行各向异性蚀刻，同时除去形成为保护膜的多余的沉积物，从而能够进行各向异性蚀刻准确度好

100. 发明授权

US5080026A Melting disposal method of sludge 失效
标题翻译：泥浆的熔融处理方法
公开(公告)号：US5080026A
公开(公告)日：1992-01-14
申请号：US544749
申请日：1990-06-26
申请人： Takeshi Tsunemi , Takashi Fujii , Muneharu Ichikawa
发明人： Takeshi Tsunemi , Takashi Fujii , Muneharu Ichikawa
IPC分类号： B09B3/00 , C02F11/10 , C02F11/12 , F23G5/02 , F23G5/08 , F23G7/00
CPC分类号： F23G5/02 , B09B3/005 , C02F11/12 , F23G5/085 , F23G7/001
摘要： A melting disposal method of sludge. The method of the invention having the steps of collecting a plurality of cakes of dehydrated sludge generated at a plurality of sewage disposal plants at one melting disposal plant; incinerating or drying a substantially fixed amount or proportion of the dehydrated sludge cakes; mixing the resultant substance; and heat-melting the resultant mixture with addition of basicity conditioning agent.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式