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1. 发明授权

US6046425A Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber 失效
标题翻译：具有设置在等离子体发生室的内表面上的绝缘体的等离子体处理装置
公开(公告)号：US6046425A
公开(公告)日：2000-04-04
申请号：US474136
申请日：1995-06-07
申请人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
发明人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
IPC分类号： B23K10/00
CPC分类号： H01J37/3244 , H01J37/32559 , H01J37/32706
摘要： A plasma processing apparatus includes a plasma processing chamber defining a plasma region. The plasma processing chamber has an inner metallic portion defining at least a portion of the plasma region. The plasma processing apparatus also includes a sample table disposed in the plasma region for holding a sample to be subjected to plasma processing, elements for applying an AC voltage to the sample table, elements for generating a plasma, including a region of intense plasma, in the plasma region independently of the AC voltage applied to the sample table such that the AC voltage applied to the sample table has no effect on the generation of the plasma, and an insulator having a thickness of several tens to several hundreds of micrometers (.mu.m) disposed on the inner metallic portion of the plasma processing chamber in a neighborhood of the region of intense plasma.
摘要翻译：等离子体处理装置包括限定等离子体区域的等离子体处理室。该等离子体处理室具有限定等离子体区域的至少一部分的内部金属部分。等离子体处理装置还包括设置在等离子体区域中的用于保持待进行等离子体处理的样品的样品台，用于向样品台施加AC电压的元件，用于产生包括强烈等离子体区域的等离子体的元件，等离子体区域与施加到样品台的AC电压无关，使得施加到样品台的AC电压对等离子体的产生没有影响，并且具有几十至几百微米厚度的绝缘体（μm））设置在等离子体处理室的内部金属部分的强烈等离子体区域附近。

2. 发明授权

US5290993A Microwave plasma processing device 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US5290993A
公开(公告)日：1994-03-01
申请号：US890184
申请日：1992-05-29
申请人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
发明人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
IPC分类号： C23C14/34 , C23C16/50 , C23C16/511 , C23F4/00 , C30B25/02 , C30B25/08 , H01J37/32 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , B23K9/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing device is composed of a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced; a sample table disposed in the vacuum chamber to which an AC voltage is applied; a microwave generating apparatus which generates microwaves and introduces the microwaves towards a surface to be processed of a sample located on the sample table; a magnetic field generating apparatus for generating a magnetic field in the vacuum chamber; an insulator disposed on a part exposed to plasma produced in the vacuum chamber; and a ground electrode disposed at a place which is on a microwave introduction side with respect to the surface of the sample table on which the sample is placed. The ground electrode arranged in an insulator exposed to the plasma is protected by covering the surface of the ground electrode by an insulating film which is so thin that application of an AC voltage is not prevented. In this way the AC voltage is applied at a place where efficiency is high, and stable plasma processing can be effected.
摘要翻译：微波等离子体处理装置由抽真空至预定压力的真空室构成，并将加工气体引入该真空室; 设置在施加有交流电压的真空室中的样品台; 微波产生装置，其产生微波并将微波引导到位于样品台上的样品待处理表面; 用于在真空室中产生磁场的磁场产生装置; 设置在暴露于在真空室中产生的等离子体的部分上的绝缘体; 以及设置在相对于其上放置有样品的样品台的表面的微波引入侧的位置处的接地电极。布置在暴露于等离子体的绝缘体中的接地电极通过用非常薄的绝缘膜覆盖接地电极的表面来保护，从而不会阻止施加AC电压。以这种方式，在效率高的地方施加AC电压，并且可以实现稳定的等离子体处理。

3. 发明授权

US5432315A Plasma process apparatus including ground electrode with protection film 失效
标题翻译：等离子体处理装置，包括具有保护膜的接地电极
公开(公告)号：US5432315A
公开(公告)日：1995-07-11
申请号：US203035
申请日：1994-02-28
申请人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
发明人： Tetsunori Kaji , Takashi Fujii , Motohiko Yoshigai , Yoshinao Kawasaki , Masaharu Nishiumi
IPC分类号： H01J37/32 , H05H1/46 , B23K10/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing apparatus includes a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced, a sample table, disposed in the vacuum chamber, to which an AC voltage is applied, a microwave generating device for generating microwaves and introducing the microwaves towards a surface to be processed of a sample located on the sample table, a magnetic field generating device for generating a magnetic field in the vacuum chamber, an insulator disposed on a part of the vacuum chamber exposed to a plasma produced in the vacuum chamber by interaction of the processing gas, the microwaves, and the magnetic field, and a ground electrode disposed in the vacuum chamber at a place which is on a microwave introduction side of the vacuum chamber with respect to the surface of the sample table on which the sample is placed, a surface of the ground electrode being covered by a semiconducting thin film.
摘要翻译：微波等离子体处理装置包括真空室，其被抽真空至预定压力并被加入到处理气体中，设置在施加有交流电压的真空室中的样品台，用于产生微波的微波产生装置，将微波引导到位于样品台上的样品的待处理表面，用于在真空室中产生磁场的磁场产生装置，设置在暴露于等离子体中产生的等离子体的真空室的一部分上的绝缘体通过处理气体，微波和磁场的相互作用的真空室和设置在真空室中相对于样品台的表面在微波引入侧的位置处的真空室中的接地电极样品被放置，接地电极的表面被半导体薄膜覆盖。

4. 发明授权

US5110408A Process for etching 失效
标题翻译：蚀刻工艺
公开(公告)号：US5110408A
公开(公告)日：1992-05-05
申请号：US658254
申请日：1991-02-20
申请人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
发明人： Takashi Fujii , Hironobu Kawahara , Kazuo Takata , Masaharu Nishiumi , Noriaki Yamamoto
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3085 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
摘要翻译：本发明涉及栅极膜，钨膜，硅膜等的蚀刻。在本发明中，使用包括由还原氟化物气体，烃气体和卤素组成的混合物的蚀刻气体具有比待蚀刻材料更大的原子直径的气体或由还原性氟化物气体和含Cl的烃气体组成的混合物，该方法包括用蚀刻气体进行各向异性腐蚀蚀刻的步骤（还原氟化物气体），通过沉积气体（烃气体）形成保护膜的步骤，以及通过与保护膜反应的气体（卤素气体）除去形成为保护膜的多余的沉积物的步骤或含Cl的氢气），其中通过在侧壁上形成保护膜进行各向异性蚀刻，同时除去形成为保护膜的多余的沉积物，从而能够进行各向异性蚀刻准确度好

5. 发明授权

US06754552B2 Control apparatus for plasma utilizing equipment 失效
标题翻译：等离子体利用设备的控制装置
公开(公告)号：US06754552B2
公开(公告)日：2004-06-22
申请号：US09797579
申请日：2001-03-05
申请人： Masaharu Nishiumi , Hiromichi Enami
发明人： Masaharu Nishiumi , Hiromichi Enami
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plurality of measuring devices to obtain numerical information necessary for control in process control of plasma utilizing equipment are connected to a first communication link, a plurality controllers to conduct numerical operations according to the numerical information are connected to a second communication link, and a plurality of control devices to receive control numerical information generated by the controllers to conduct necessary control.
摘要翻译：用于获得等离子体利用设备的过程控制中控制所必需的数值信息的多个测量装置连接到第一通信链路，根据数字信息进行数字操作的多个控制器被连接到第二通信链路，并且多个的控制装置接收由控制器产生的控制数字信息以进行必要的控制。

6. 发明授权

US4618398A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US4618398A
公开(公告)日：1986-10-21
申请号：US700287
申请日：1985-02-11
申请人： Makoto Nawata , Ryoji Fukuyama , Norio Nakazato , Masaharu Nishiumi
发明人： Makoto Nawata , Ryoji Fukuyama , Norio Nakazato , Masaharu Nishiumi
IPC分类号： H01L21/306 , C23F1/12 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23F4/00 , H01L21/32136
摘要： The present invention is concerned with a dry-etching method wherein a gaseous mixture of boron trichloride, chlorine and a hydrocarbon, to be used as an etching gas, is converted into plasma to etch aluminum or its alloys with ions or radicals formed thereby. The invention makes it possible to accomplish the anisotropic etching of aluminum or its alloys at high speeds with a low RF power density.
摘要翻译：本发明涉及一种干蚀刻方法，其中将用作蚀刻气体的三氯化硼，氯气和烃的气体混合物转化为等离子体，以用由此形成的离子或自由基蚀刻铝或其合金。本发明使得可以以低的RF功率密度在高速下实现铝或其合金的各向异性蚀刻。

7. 发明授权

US4609426A Method and apparatus for monitoring etching 失效
标题翻译：用于监测蚀刻的方法和装置
公开(公告)号：US4609426A
公开(公告)日：1986-09-02
申请号：US736769
申请日：1985-05-22
申请人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
发明人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
IPC分类号： H01L21/302 , G01N21/62 , H01J37/32 , H01L21/145 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32935 , G01N21/62 , G01N2201/122
摘要： This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.
摘要翻译：本发明涉及一种用于监测蚀刻的方法和装置。监测方法包括以下步骤：将通过干蚀刻工艺蚀刻样品的处理室内的气体压力调节到可以澄清发射谱线谱的压力，将压力调节的气体转化为等离子体，并且随着时间的推移从发射线谱的强度的变化监测样品的蚀刻状态。监视器装置包括排气装置，用于通过干蚀刻处理从其中正在蚀刻样品的处理室排出气体，用于引入从处理室排出的气体并将其转换成等离子体的等离子体装置，用于调节压力的压力调节装置在等离子体装置处的等离子体的发射线谱的检测装置，以及用于检测等离子体装置上的等离子体的发射谱线光谱的光谱检测装置，以及检测发射线的强度的变化随着时间的推移。

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