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    • 3. 发明授权
    • Method and system for processing signals via directional couplers embedded in an integrated circuit package
    • 用于通过嵌入在集成电路封装中的定向耦合器处理信号的方法和系统
    • US08228134B2
    • 2012-07-24
    • US12984288
    • 2011-01-04
    • Ahmadreza Rofougaran
    • Ahmadreza Rofougaran
    • H01P5/18H01P1/215
    • H01P5/185H01L23/66H01L2223/6627H01L2223/6677H01L2224/16227H01L2224/16235H01L2224/32225H01L2224/73204H01L2924/15192H01L2924/15321H01L2924/19105
    • Methods and systems for processing signals via directional couplers embedded in a package are disclosed and may include generating via a directional coupler, one or more output RF signals that may be proportional to a received RF signal. The directional coupler may be integrated in a multi-layer package. The generated RF signal may be processed by an integrated circuit electrically coupled to the multi-layer package. The directional coupler may include quarter wavelength transmission lines, which may include microstrip or coplanar structures. The directional coupler may be electrically coupled to one or more variable capacitances in the integrated circuit. The variable capacitance may include CMOS devices in the integrated circuit. The directional coupler may include discrete devices, which may be surface mount devices coupled to the multi-layer package or may be devices integrated in the integrated circuit. The integrated circuit may be flip-chip bonded to the multi-layer package.
    • 公开了用于通过嵌入在封装中的定向耦合器处理信号的方法和系统,并且可以包括经由定向耦合器产生可以与接收的RF信号成比例的一个或多个输出RF信号。 定向耦合器可以集成在多层封装中。 产生的RF信号可以由电耦合到多层封装的集成电路来处理。 定向耦合器可以包括四分之一波长传输线,其可以包括微带或共面结构。 定向耦合器可以电耦合到集成电路中的一个或多个可变电容。 可变电容可以包括集成电路中的CMOS器件。 定向耦合器可以包括分立器件,其可以是耦合到多层封装的表面贴装器件,或者可以是集成在集成电路中的器件。 集成电路可以倒装芯片结合到多层封装。
    • 4. 发明申请
    • System and device for transmission using ultrawide band pass filter
    • 使用超宽带通滤波器进行传输的系统和设备
    • US20050064823A1
    • 2005-03-24
    • US10935081
    • 2004-09-08
    • Akihiko SaitoHiroshi Harada
    • Akihiko SaitoHiroshi Harada
    • H01P1/203H01P1/215H04B1/04H04B1/16H04B1/02
    • H01P1/20363H01P1/215H04B1/7172
    • Disclosed are a transmission system and a device of small scale, low cost and low power for transmitting signal of a rate over 1 Gbps using a small scale and low loss ultrawide band pass filter (UWBPF). The transmission system comprises the steps of generating pulse signal by a short pulse generator, band-limiting the pulse signal by passing it through a waveshape forming filter, and transmitting the resulting pulse signal in a certain frequency band through a UWBPF, and receiving and passing the signal wave through a UWBPF of the same frequency range and introducing the signal wave through a pulse detector into the determining part. The UWBPF used is prepared by forming a distribution constant circuit on a lossy substrate having low-pass function.
    • 公开了一种小规模,低成本和低功率的传输系统和装置,用于使用小规模和低损耗超宽带通滤波器(UWBPF)传输速率超过1Gbps的信号。 传输系统包括通过短脉冲发生器产生脉冲信号的步骤,通过使其通过波形形成滤波器对脉冲信号进行带限制,并通过UWBPF将得到的脉冲信号传输到某一频带,并接收和传递 信号波通过相同频率范围的UWBPF,并将信号波通过脉冲检测器引入确定部分。 使用的UWBPF通过在具有低通功能的有损基板上形成分布常数电路来制备。
    • 5. 发明授权
    • Magnetically tunable ferrite microwave devices
    • 磁调谐铁氧体微波器件
    • US6141571A
    • 2000-10-31
    • US27387
    • 1998-02-20
    • Gerald F. Dionne
    • Gerald F. Dionne
    • H01P1/215H01P1/38H01P1/217H01B12/02H01P1/387H01P7/08
    • H01P1/38H01P1/215Y10S505/70Y10S505/866
    • In a ferrite switchable microwave device, a magnetic structure is formed in a nearly continuous closed-loop configuration of a single crystal material, or of a material exhibiting the magnetic properties of single crystal materials (quasi-single crystal materials). A magnetization M is induced in the structure. The toroidal shape of the structure in combination with the properties of the magnetic material results in a device which exhibits virtually no hysteresis. The device is operable either in a fully magnetized state or in a partially magnetized state. In a fully magnetized state, the device operates in the region of magnetic saturation. The absence of hysteresis in the device enables switching between the positive and negative magnetic saturation points with very little energy. In a partially magnetized state, the device provides a variable magnetization M between the two saturation points. The magnetization curve is made linear and therefore controllable by introducing a gap or other demagnetizing feature in the magnetic structure. This device is particularly operable as a variable phase shifter or tunable filter where the magnetization controls the velocity of electromagnetic energy propagating in the magnetic device.
    • 在铁氧体可切换微波装置中,以单晶材料或具有单晶材料(准单晶材料)的磁特性的材料形成几乎连续的闭环构造的磁性结构。 在结构中引发磁化M。 该结构的环形形状与磁性材料的特性相结合形成实质上没有滞后的装置。 该装置可以在完全磁化状态或部分磁化状态下操作。 在完全磁化状态下,器件工作在磁饱和区域。 器件中不存在迟滞使得能够以极少的能量在正和负磁饱和点之间切换。 在部分磁化状态下,该装置在两个饱和点之间提供可变磁化M。 磁化曲线是线性的,因此可以通过在磁性结构中引入间隙或其它去磁特征来控制。 该装置特别可操作为可变移相器或可调谐滤波器,其中磁化控制在磁性装置中传播的电磁能的速度。
    • 7. 发明授权
    • Reflection-type S/N enhancer
    • 反射型S / N增强器
    • US5880651A
    • 1999-03-09
    • US916409
    • 1997-08-22
    • Masanori IkariMasayuki TannoToshihiko RyuoTakao KukiToshihiro Nomoto
    • Masanori IkariMasayuki TannoToshihiko RyuoTakao KukiToshihiro Nomoto
    • C30B29/28H01F10/28H03H2/00H01P1/215
    • H03H2/001
    • A reflection-type S/N enhancer includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. The magnetic thin film has a saturation magnetization in a range of 500 G to 1,100 G. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as .vertline..theta..sub.1 +.theta..sub.2 .vertline. orientation of the crystal in the magnetic thin film, and ".theta..sub.2 " denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer in a horizontal plane. The transverse direction of the transducer is perpendicular to the longitudinal direction thereof.
    • 反射型S / N增强器包括从{110}平面偏斜的Gd 3 Ga 5 O 12衬底。 通过液相外延在Gd3Ga5O12基板上形成包含石榴石晶体的磁性薄膜。 磁性薄膜的饱和磁化强度在500G至1100G的范围内。传感器用于响应于RF电信号激励磁性薄膜中的静磁波。 向磁性薄膜施加偏置磁场。 有一个关系为| θ1θθ2 | <45°,其中“θ1”表示换能器的纵向方向与磁性薄膜中的晶体的<001>取向之间的角度,“θ2”表示 偏置磁场的方向和换能器的横向在水平面内。 换能器的横向垂直于其纵向方向。