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    • 92. 发明授权
    • Magnetic field analysis method and programs for rotating machines
    • 旋转机械的磁场分析方法和程序
    • US07069162B2
    • 2006-06-27
    • US10761405
    • 2004-01-22
    • Kenji Miyata
    • Kenji Miyata
    • G06F19/00
    • G01R31/245
    • Constant components and rotation fundamental mode components on the slide plane between a rotor and a stator are derived from a magnetic field distribution at a predetermined time. The analysis space is divided into a rotor space and a stator space. A fundamental mode on the slide plane is rotated by a rotation angle of a rotation magnetic field corresponding to a time-step width. A solution obtained in this state is added to the constant components. By using the addition result as the boundary conditions on the slide plane, non-linear magnetic field analysis is performed by taking into consideration the magnetic saturation in the stator space. The rotation fundamental mode on the slide mode is rotated by an angle obtained by subtracting the rotation angle of the rotor from the rotation angle of the rotation magnetic field corresponding to the time-step width.
    • 在转子和定子之间的滑动平面上的恒定分量和旋转基模分量从预定时间的磁场分布导出。 分析空间分为转子空间和定子空间。 滑动平面上的基本模式旋转与对应于时间步长的旋转磁场的旋转角度。 将在该状态下得到的溶液加入恒定成分。 通过使用相加结果作为滑动平面上的边界条件,通过考虑定子空间中的磁饱和度来执行非线性磁场分析。 滑动模式下的旋转基本模式以与时间步长相对应的旋转磁场的旋转角度减去转子的旋转角度旋转角度。
    • 98. 发明授权
    • High energy accelerator
    • 高能加速器
    • US4733132A
    • 1988-03-22
    • US845347
    • 1986-03-28
    • Kenji MiyataMasatsugu Nishi
    • Kenji MiyataMasatsugu Nishi
    • H05H9/00H01J25/10
    • H05H9/00
    • In an accelerator for accelerating charged particles by using electro-magnetic wave, in which a plurality of cells are disposed periodically, a washer-shaped electrode separated from the cylinder wall is located at the boundary of each of the cells, which electrode has a hole, through which accelerated charged particles pass, at its center portion and an approximately uniform thickness. The thickness and the diameter of said washer-shaped electrode and the gap between said washer-shaped electrode and the inner surface of said cylinder are so chosen that the average strength of the accelerating electric field is highest. The peak strengths of the electric field are approximately equal at the outer and inner peripheral portions of said washer-shaped electrode.
    • 在通过使用其中周期性地设置多个电池的电磁波加速带电粒子的加速器中,与气缸壁分离的垫圈状电极位于每个电池的边界,该电极具有孔 加速的带电粒子在其中心部分通过,大致均匀的厚度。 所述垫圈状电极的厚度和直径以及所述垫圈状电极和所述气缸的内表面之间的间隙被选择为使得加速电场的平均强度最高。 电场的峰值强度在所述垫圈状电极的外周和外周部分大致相等。
    • 99. 发明授权
    • Field controlled thyristor with double-diffused source region
    • 具有双扩散源极区域的场控晶闸管
    • US4514747A
    • 1985-04-30
    • US357594
    • 1982-03-12
    • Kenji MiyataYoshio TerasawaSaburo OikawaSusumu MurakamiMasahiro Okamura
    • Kenji MiyataYoshio TerasawaSaburo OikawaSusumu MurakamiMasahiro Okamura
    • H01L29/08H01L29/10H01L29/744H01L29/74
    • H01L29/744H01L29/0834H01L29/1066
    • Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.
    • 公开了一种场控晶闸管,其中N +型的第一半导体区域,N型的第二半导体区域,P型的第三半导体区域,N型的第四半导体区域和P + 型形成在具有两个主表面的半导体衬底中,第一,第二和第三半导体区域暴露在第一主表面中,第五半导体区域暴露在第二主表面中; 并且P型的第三半导体区域彼此隔开预定间隔。 第三半导体区域与暴露在第一主表面中的暴露表面的半导体区域连接。 第二半导体区域中的杂质浓度从第一半导体区域朝向第三半导体区域减小,从而可以实现高反向阻断电压的低正向压降。 还公开了通过单独的扩散处理形成第三半导体区域和表面暴露的半导体区域的方法。