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91. 发明申请

US20110246031A1 Traction Control Device 有权
标题翻译：牵引力控制装置
公开(公告)号：US20110246031A1
公开(公告)日：2011-10-06
申请号：US13139470
申请日：2009-12-25
申请人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
发明人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
IPC分类号： B60W10/00 , B60W10/12 , B60W10/18
CPC分类号： B60W30/18172 , B60K17/35 , B60T8/175 , B60T8/4809 , B60T10/00 , B60T2201/14 , B60T2210/16 , B60W10/14 , B60W10/16 , B60W10/184 , B60W2300/17 , B60W2510/0233 , B60W2520/263 , B60W2520/266 , B60W2520/28 , B60W2720/403 , B60W2720/406
摘要： A fraction control device includes: rotation speed detectors provided to wheels; a control-start determiner that determines whether or not to control a braking mechanism and a differential adjusting mechanism based on rotation speeds; a braking mechanism controller that controls the braking mechanism based on a result of the determination of the control-start determiner; and a differential adjusting mechanism controller that controls the differential adjusting mechanism based on the result of the determination of the control-start determiner, in which the control-start determiner includes: a right-left-wheel rotation speed difference calculating section; a front-rear-wheel rotation speed difference calculating section; and a control-start determining section that determines whether or not to start controlling at least one of the braking mechanism and the differential adjusting mechanism when one of rotation speed differences reaches or exceeds a predetermined threshold.
摘要翻译：分数控制装置包括：提供给车轮的转速检测器; 控制启动确定器，其基于转速确定是否控制制动机构和差动调节机构; 制动机构控制器，其基于所述控制开始确定器的确定结果控制所述制动机构; 以及差动调节机构控制器，其基于所述控制开始判定器的确定结果来控制所述差速调节机构，所述控制开始判定器包括：左右轮转速差计算部; 前后轮转速差计算部; 以及控制开始判定部，其当转速差达到或超过预定阈值时，判定是否开始控制所述制动机构和所述差速调整机构中的至少一个。

92. 发明授权

US07687822B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07687822B2
公开(公告)日：2010-03-30
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一主表面。

93. 发明申请

US20090315150A1 III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物晶体制造方法，III型氮化物晶体基板和III型氮化物半导体装置
公开(公告)号：US20090315150A1
公开(公告)日：2009-12-24
申请号：US12297311
申请日：2007-11-15
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/20 , C30B19/00
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在s）; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

94. 发明授权

US09279194B2 Method of growing III-nitride crystal 有权
标题翻译：生长III族氮化物晶体的方法
公开(公告)号：US09279194B2
公开(公告)日：2016-03-08
申请号：US12630836
申请日：2009-12-03
申请人： Hiroaki Yoshida , Shinsuke Fujiwara , Koji Uematsu , Masanori Morishita
发明人： Hiroaki Yoshida , Shinsuke Fujiwara , Koji Uematsu , Masanori Morishita
IPC分类号： C30B25/20 , C30B29/40
CPC分类号： C30B25/20 , C30B29/406
摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.
摘要翻译：提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括：制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

95. 发明授权

US08697564B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697564B2
公开(公告)日：2014-04-15
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

96. 发明申请

US20130190992A1 Traction Control Apparatus 有权
标题翻译：牵引力控制装置
公开(公告)号：US20130190992A1
公开(公告)日：2013-07-25
申请号：US13796298
申请日：2013-03-12
申请人： Koji Uematsu , Kazuhiro Hatake
发明人： Koji Uematsu , Kazuhiro Hatake
IPC分类号： B60T8/175
CPC分类号： E02F9/2083 , B60T8/175 , B60T8/1769 , B60T2210/16 , B60T2270/202 , F02D29/02
摘要： An object of the invention is to provide a traction control apparatus capable of suitably controlling an error, if it occurs, between an estimation of a vehicle speed and an actual vehicle speed. A traction control apparatus according to the invention includes a vehicle speed estimator and a driving-force controller. The traction control apparatus includes a vehicle state determiner that determines whether the vehicle speed of the construction vehicle estimated by the vehicle speed estimator and the driving-force control by the driving-force controller are balanced, and a driving-force control changer that changes a driving-force control by the driving-force controller when the vehicle state determiner determines the vehicle speed and the driving-force control to be unbalanced.
摘要翻译：本发明的目的是提供一种牵引控制装置，其能够适当地控制在车速和实际车速的估计之间发生的误差。根据本发明的牵引力控制装置包括车速估计器和驱动力控制器。牵引控制装置包括车辆状态判定器，其确定由车速估计器估计的施工车辆的车速和由驱动力控制器的驱动力控制是否平衡的驱动力控制变更器，当车辆状态确定器确定车速并且驱动力控制不平衡时，通过驱动力控制器的驱动力控制。

97. 发明申请

US20130149847A1 METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR 有权
标题翻译：制造GaN基膜及其使用的复合基板的方法
公开(公告)号：US20130149847A1
公开(公告)日：2013-06-13
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

98. 发明授权

US08463511B2 Traction control device 有权
标题翻译：牵引控制装置
公开(公告)号：US08463511B2
公开(公告)日：2013-06-11
申请号：US13140664
申请日：2009-12-25
申请人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
发明人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
IPC分类号： G06F7/70
CPC分类号： B60W30/18172 , B60K17/35 , B60T8/175 , B60T8/4809 , B60T10/00 , B60T2201/14 , B60T2210/16 , B60W10/14 , B60W10/16 , B60W10/184 , B60W2300/17 , B60W2510/0233 , B60W2520/263 , B60W2520/266 , B60W2520/28 , B60W2720/403 , B60W2720/406
摘要： An object of the invention is to provide a traction control device capable of preventing a reduction in acceleration. A traction control device of the invention includes a braking mechanism controller that controls a braking mechanism. The braking mechanism controller includes: a target brake torque calculating section that calculates a target brake torque to each of wheels based on the rotation speed of the wheel and an estimated vehicle speed; a target brake torque determining section that determines whether or not the target brake torque reaches or exceeds a per-stored threshold; a reference wheel determining section that selects a reference wheel used as a reference for controlling the braking mechanism based on the target brake torque to each of the wheels; and a target brake torque reducing section that reduces the target brake torque in accordance with a difference between the target brake torque to the reference wheel and the threshold when the target brake torque to one of the wheels reaches or exceeds the threshold.
摘要翻译：本发明的目的是提供一种能够防止加速度降低的牵引力控制装置。本发明的牵引力控制装置包括控制制动机构的制动机构控制器。制动机构控制器包括：目标制动器转矩计算部，其根据车轮的转速和车速估算各车轮的目标制动转矩; 目标制动转矩确定部，其确定目标制动转矩是否达到或超过每个存储的阈值; 参考轮确定部，其基于目标制动转矩，选择用作用于控制制动机构的基准的基准轮; 以及目标制动转矩降低部，其当目标制动转矩到达所述车轮之一达到或超过所述阈值时，根据所述基准轮的目标制动转矩与所述阈值之间的差降低所述目标制动转矩。

99. 发明授权

US08352145B2 Traction control device 有权
标题翻译：牵引控制装置
公开(公告)号：US08352145B2
公开(公告)日：2013-01-08
申请号：US13175107
申请日：2011-07-01
申请人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
发明人： Koji Uematsu , Kazuhiro Hatake , Yuya Kusumoto
IPC分类号： G01M1/38 , G05B13/00
CPC分类号： B60W30/18172 , B60K17/35 , B60T8/175 , B60T8/4809 , B60T10/00 , B60T2201/14 , B60T2210/16 , B60W10/14 , B60W10/16 , B60W10/184 , B60W2300/17 , B60W2510/0233 , B60W2520/263 , B60W2520/266 , B60W2520/28 , B60W2720/403 , B60W2720/406
摘要： A traction control device includes: rotation speed detectors provided to wheels; a control-start determiner that determines whether or not to control a braking mechanism and a differential adjusting mechanism based on rotation speeds; a braking mechanism controller that controls the braking mechanism based on a result of the determination of the control-start determiner; and a differential adjusting mechanism controller that controls the differential adjusting mechanism based on the result of the determination of the control-start determiner, in which the control-start determiner includes: a right-left-wheel rotation speed difference calculating section; a front-rear-wheel rotation speed difference calculating section; and a control-start determining section that determines whether or not to start controlling at least one of the braking mechanism and the differential adjusting mechanism when one of rotation speed differences reaches or exceeds a predetermined threshold.
摘要翻译：牵引力控制装置包括：提供给车轮的转速检测器; 控制启动确定器，其基于转速确定是否控制制动机构和差动调节机构; 制动机构控制器，其基于所述控制开始确定器的确定结果控制所述制动机构; 以及差动调节机构控制器，其基于所述控制开始判定器的确定结果来控制所述差速调节机构，所述控制开始判定器包括：左右轮转速差计算部; 前后轮转速差计算部; 以及控制开始判定部，其当转速差达到或超过预定阈值时，判定是否开始控制所述制动机构和所述差速调整机构中的至少一个。

100. 发明申请

US20110270497A1 Traction Control Device 有权
标题翻译：牵引力控制装置
公开(公告)号：US20110270497A1
公开(公告)日：2011-11-03
申请号：US13142038
申请日：2009-12-25
申请人： Koji Uematsu , Kazuhiro Hatake
发明人： Koji Uematsu , Kazuhiro Hatake
IPC分类号： B60T8/175
CPC分类号： E02F9/2083 , B60T8/175 , B60T8/1769 , B60T2210/16 , B60T2270/202 , F02D29/02
摘要： An object of the invention is to provide a traction control apparatus capable of suitably controlling an error, if it occurs, between an estimation of a vehicle speed and an actual vehicle speed. A traction control apparatus according to the invention includes a vehicle speed estimator and a driving-force controller. The traction control apparatus includes a vehicle state determiner that determines whether the vehicle speed of the construction vehicle estimated by the vehicle speed estimator and the driving-force control by the driving-force controller are balanced, and a driving-force control changer that changes a driving-force control by the driving-force controller when the vehicle state determiner determines the vehicle speed and the driving-force control to be unbalanced.
摘要翻译：本发明的目的是提供一种牵引控制装置，其能够适当地控制在车速和实际车速的估计之间发生的误差。根据本发明的牵引力控制装置包括车速估计器和驱动力控制器。牵引控制装置包括车辆状态判定器，其确定由车速估计器估计的施工车辆的车速和由驱动力控制器的驱动力控制是否平衡的驱动力控制变更器，当车辆状态确定器确定车速并且驱动力控制不平衡时，通过驱动力控制器的驱动力控制。

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