专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110080223A1 Voltage controlled oscillator 失效
标题翻译：压控振荡器
公开(公告)号：US20110080223A1
公开(公告)日：2011-04-07
申请号：US12924515
申请日：2010-09-29
申请人： Junichiro Yamakawa , Kazuo Akaike , Mikio Takano , Hiroshi Hoshigami , Kenji Kawahata , Kietsu Saito , Yasushi Yamamoto , Tatsunori Onzuka , Toshimasa Tsuda , Susumu Yoshimoto
发明人： Junichiro Yamakawa , Kazuo Akaike , Mikio Takano , Hiroshi Hoshigami , Kenji Kawahata , Kietsu Saito , Yasushi Yamamoto , Tatsunori Onzuka , Toshimasa Tsuda , Susumu Yoshimoto
IPC分类号： H03B5/12
CPC分类号： H03B5/1243 , H03B5/1203 , H03B2200/0008
摘要： There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip. The circuit components are selected according to an oscillation frequency.
摘要翻译：提供了一种紧凑的压控振荡器，并且可以以低成本制造。压控振荡器被构造为包括：包括可变电容元件和电感元件的谐振部分，所述可变电容元件具有根据用于来自外部部分的频率控制输入的控制电压而变化的电容和串联谐振频率的共振部分根据电容进行调节; 放大部分，用于放大来自谐振部分的频率信号; 以及反馈部分，包括用于反馈的电容元件，并将由放大部分放大的频率信号馈送到谐振部分，以与放大部分和谐振部分一起形成振荡环路，其中放大部分设置在集成电路中芯片，并且用于反馈的谐振部分和电容元件形成为与集成电路芯片分离的电路部件。根据振荡频率选择电路元件。

2. 发明申请

US20100225418A1 Low band side filter of duplexer, high band side filter of duplexer, and duplexer 失效
标题翻译：双工器的低带侧滤波器，双工器的高频带侧滤波器和双工器
公开(公告)号：US20100225418A1
公开(公告)日：2010-09-09
申请号：US12660938
申请日：2010-03-08
申请人： Toshihiko Kawamoto , Susumu Yoshimoto
发明人： Toshihiko Kawamoto , Susumu Yoshimoto
IPC分类号： H03H9/70
CPC分类号： H03H9/725 , H03H9/6483 , H03H9/6489
摘要： To improve an isolation characteristic in a pass frequency band of a high band side filter 12 in a duplexer including a low band side filter 11 and the high band side filter 12. In a low band side filter 11 in a duplexer formed on a piezoelectric substrate 10 and in which transmission and reception of signals are respectively performed from either of the low band side filter 11 and the high band side filter 12 and the other filter with respect to an input/output port 14, series arms and parallel arms each formed of an elastic wave resonator 5 form the low band side filter 11, and a shield electrode 50 extending to a position close to at least either of the input/output port 14 and a low band side filter port 15 and grounded is disposed.
摘要翻译：提高包括低频带侧滤波器11和高频带侧滤波器12的双工器中的高频带侧滤波器12的通带频带的隔离特性。在形成在压电基板上的双工器中的低频带侧滤波器11 10，并且其中信号的发送和接收分别从低频带侧滤波器11和高频带侧滤波器12中的任一个和相对于输入/输出端口14的另一个滤波器执行，串联臂和并联臂分别由弹性波谐振器5形成低频带侧滤波器11，并且设置延伸到接近输入/输出端口14和低频带侧滤波器端口15中的至少一个并接地的位置的屏蔽电极50。

3. 发明授权

US07687822B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07687822B2
公开(公告)日：2010-03-30
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一主表面。

4. 发明授权

US5949307A Surface acoustic wave device having two resonators with partially overlapping transducers 失效
标题翻译：表面声波装置具有两个具有部分重叠的传感器的谐振器
公开(公告)号：US5949307A
公开(公告)日：1999-09-07
申请号：US80721
申请日：1998-05-21
申请人： Susumu Yoshimoto , Yasushi Yamamoto
发明人： Susumu Yoshimoto , Yasushi Yamamoto
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/02771 , H03H9/02748 , H03H9/6436 , H03H9/6443 , H03H9/6453 , H03H9/6479 , H03H9/1452 , H03H9/14532
摘要： A surface acoustic wave device includes first and second longitudinal mode resonators. The first longitudinal mode resonator has two resonance modes, i.e., a longitudinal mode distributed in the same direction as a propagating direction of a surface acoustic wave (SAW) and a transverse mode distributed in a direction perpendicular to the propagating direction of the SAW. The second longitudinal mode resonator is arranged adjacent to the first resonator in a direction perpendicular to the propagating direction of the SAW, and has two resonance modes, i.e., a longitudinal mode and a transverse mode. The resonance modes of the second longitudinal mode resonator are acoustically coupled to the resonance modes of the first longitudinal mode resonator. The first longitudinal mode resonator has an output InterDigital Transducer (IDT) having an interdigital electrode to excite a SAW. The second longitudinal mode resonator has an input IDT having an interdigital electrode to receive the SAW from the output IDT. The interdigital electrodes of the input and output IDTs are arranged adjacent to each other in a direction perpendicular to the propagating direction of the SAW and to partially overlap each other in the same direction as the propagating direction.
摘要翻译：表面声波装置包括第一和第二纵模谐振器。第一纵模谐振器具有两个共振模式，即纵向模式分布在与SAW的传播方向垂直的方向上分布的表面声波（SAW）和横向模式的传播方向相同的方向上。第二纵模谐振器在与SAW的传播方向垂直的方向上与第一谐振器相邻地布置，并且具有两种谐振模式，即纵向模式和横向模式。第二纵模谐振器的谐振模式与第一纵模谐振器的谐振模式声学耦合。第一纵模式谐振器具有输出的数字数字转换器（IDT），其具有用于激发SAW的叉指电极。第二纵模谐振器具有输入IDT，其具有用于从输出IDT接收SAW的叉指电极。输入输出IDT的叉指电极在与SAW的传播方向垂直的方向上彼此相邻布置，并且在与传播方向相同的方向上部分地彼此重叠。

5. 发明申请

US20130207076A1 METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：制备III族氮化物半导体发光器件的方法和III族氮化物半导体发光器件
公开(公告)号：US20130207076A1
公开(公告)日：2013-08-15
申请号：US13821857
申请日：2011-08-29
申请人： Susumu Yoshimoto , Fuminori Mitsuhashi
发明人： Susumu Yoshimoto , Fuminori Mitsuhashi
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/0075 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/06 , H01L33/16 , H01L33/40
摘要： A group III nitride semiconductor light emitting device with a satisfactory ohmic contact is provided. The group III nitride semiconductor light emitting device includes a junction JC which tilts with respect to the reference plane that is orthogonal to a c-axis of a gallium nitride based semiconductor layer. An electrode forms the junction with the semipolar surface of the gallium nitride based semiconductor layer. The oxygen concentration of the grown gallium nitride based semiconductor layer that will form the junction JC is reduced. Since the electrode is in contact with the semipolar surface of the gallium nitride based semiconductor layer so as to form the junction, the metal-semiconductor junction has satisfactory ohmic characteristics.
摘要翻译：提供具有令人满意的欧姆接触的III族氮化物半导体发光器件。 III族氮化物半导体发光器件包括相对于与氮化镓基半导体层的c轴正交的参考平面倾斜的结JC。电极与氮化镓基半导体层的半极性表面形成结。将形成接合JC的生长的氮化镓基半导体层的氧浓度降低。由于电极与氮化镓基半导体层的半极性表面接触以形成结，所以金属 - 半导体结具有令人满意的欧姆特性。

6. 发明授权

US08421555B2 Receiving side filter of duplexer and duplexer 失效
标题翻译：双工器和双工器的接收侧滤波器
公开(公告)号：US08421555B2
公开(公告)日：2013-04-16
申请号：US12658012
申请日：2010-02-01
申请人： Susumu Yoshimoto
发明人： Susumu Yoshimoto
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/02913 , H03H9/0057 , H03H9/02921 , H03H9/64 , H03H9/6476 , H03H9/6483 , H03H9/725
摘要： To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.
摘要翻译：提供能够防止电场和磁场泄漏到外部的双工器和双工器的接收侧滤波器。在具有纵向模式谐振器型滤波器的接收侧滤波器中，所述纵向模式谐振器型滤波器包括分别形成在压电基板上的交叉指状电极和反射器以及分别设置在纵向模式谐振器的输入侧和输出侧上的不平衡输入信号路径和平衡输出端口并且在双工器的接收侧使用，连接到交叉指状电极的接地电极侧的屏蔽电极被设置为围绕接收侧滤波器的周边，使得电场和磁场泄漏到从接收侧滤波器外侧被屏蔽电极短路。

7. 发明授权

US08354895B2 Duplexer including first and second additional grating reflectors 有权
标题翻译：双工器包括第一和第二附加光栅反射器
公开(公告)号：US08354895B2
公开(公告)日：2013-01-15
申请号：US12736459
申请日：2009-04-10
申请人： Toshihiko Kawamoto , Susumu Yoshimoto
发明人： Toshihiko Kawamoto , Susumu Yoshimoto
IPC分类号： H03H9/72
CPC分类号： H03H9/02637 , H03H9/6483 , H03H9/725
摘要： Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.
摘要翻译：公开了具有良好隔离特性的小型化双工器。具有分别形成在公共压电基板上的梯型滤波器中的高频带侧滤波器和低频带侧滤波器的双工器具备：第一弹性波谐振器，其包含在这些滤波器之一中;第二弹性体波形谐振器被包括在另一个滤波器中，以及第一附加光栅反射器，设置在这些谐振器之间以反射从第一弹性波谐振器的光栅反射器泄漏的弹性波，并且其中不在其上设置附加的光栅反射器在第一弹性波谐振器中与第二弹性波谐振器相对的一侧。

8. 发明申请

US20120068790A1 Elastic wave device 审中-公开
标题翻译：弹性波装置
公开(公告)号：US20120068790A1
公开(公告)日：2012-03-22
申请号：US13199488
申请日：2011-08-31
申请人： Susumu Yoshimoto
发明人： Susumu Yoshimoto
IPC分类号： H03H9/125
CPC分类号： H03H9/02921 , H03H9/02952 , H03H9/14544 , H03H9/6436 , H03H9/6466
摘要： There is provided an elastic wave device that is capable of suppressing deterioration in flatness of a frequency characteristic in a pass frequency band yet has excellent ESD resistance. At positions apart from a crossing area of electrode fingers 12, 12 toward a bulbar 11, first float dummy electrodes 16, 16 and a second float dummy electrode 18 are provided between adjacent IDT electrodes 1, 1 and between the IDT electrode 1 and a grating reflector 2 which are adjacent to each other. These float dummy electrodes 16, 18 are in a state of electrically floating from other regions, and these float dummy electrodes 16, 18 are formed so as to correspond to an arrangement pattern of the electrode fingers 12 in the IDT electrode 1.
摘要翻译：提供了能够抑制通过频带中的频率特性的平坦度劣化但具有优异的耐ESD性的弹性波装置。在电极指12,12的交叉区域朝向延伸部11的位置处，在相邻的IDT电极1,1之间以及IDT电极1与光栅之间设置有第一浮置虚拟电极16,16和第二浮置虚拟电极18 反射器2彼此相邻。这些浮置虚拟电极16,18处于与其他区域电浮动的状态，并且这些浮置虚拟电极16,18形成为对应于IDT电极1中的电极指12的布置图案。

9. 发明申请

US20120062336A1 Duplexer 审中-公开
标题翻译：双工器
公开(公告)号：US20120062336A1
公开(公告)日：2012-03-15
申请号：US13199866
申请日：2011-09-12
申请人： Susumu Yoshimoto
发明人： Susumu Yoshimoto
IPC分类号： H03H9/72
CPC分类号： H03H9/725 , H03H9/0038 , H03H9/0095 , H03H9/706
摘要： Disclosed is a receiving side filter in a pass band of a duplexer's transmitting side filter. Output balancing is performed by the receiving side filter, which includes a longitudinal mode resonator type filter. A pass band of the receiving side filter is set on a lower band side than the pass band of the transmitting side filter. Between an antenna port and a pair of balanced reception ports, first and second ladder-type filters are provided. The first includes a series arm and a parallel arm, each formed of a SAW resonator and a longitudinal mode resonator type filter. The second ladder-type filter has series arms, formed of SAW resonators respectively provided in signal paths that connect the respective balanced reception ports and the longitudinal mode resonator type filter, and a parallel arm formed of a SAW resonator and connecting between these signal paths.
摘要翻译：公开了双工器发送侧滤波器的通带中的接收侧滤波器。输出平衡由包括纵模谐振器型滤波器的接收侧滤波器执行。接收侧滤波器的通带设置在比发送侧滤波器的通带更低的带侧。在天线端口和一对平衡接收端口之间，提供第一和第二梯形滤波器。第一个包括串联臂和平行臂，每个臂由SAW谐振器和纵向模式谐振器型滤波器形成。第二梯形滤波器具有分别设置在连接相应的平衡接收端口和纵向谐振器型滤波器的信号路径中的SAW谐振器的串联臂，以及由SAW谐振器形成的并联臂，并在这些信号路径之间连接。

10. 发明申请

US20090318108A1 Acoustic surface wave filter module and method of manufacturing the same 失效
标题翻译：声表面波滤波器模块及其制造方法
公开(公告)号：US20090318108A1
公开(公告)日：2009-12-24
申请号：US12462385
申请日：2009-08-03
申请人： Susumu Yoshimoto
发明人： Susumu Yoshimoto
IPC分类号： H04B1/16
CPC分类号： H03H9/14597
摘要： In order to reduce the parts required for matching of an SAW filter module, the SAW filter module 10 obtains matching for coupling SAW filters 10A to 10D with RF-IC 20 using impedance matching circuits 11A to 11D. The real part of output impedance Z saw of the SAW filter is closely matched with the real part of input impedance Zic of an RF-IC. The impedance matching circuit modifies the imaginary part of the output impedance Zm of the SAW filter module according to the imaginary part of the input impedance Zic of the RF-IC 20. The impedance matching circuit composed of one piece of inductance or capacitor, or a plurality of inductors or capacitors in parallel connection, ans formed as a print pattern on a module substrate, in which the real part R saw and the real part Ric are in a relation nearly of 0.8 Ric
摘要翻译：为了减少SAW滤波器模块的匹配所需的部件，SAW滤波器模块10使用阻抗匹配电路11A至11D获得与RF-IC 20耦合的SAW滤波器10A至10D的匹配。 SAW滤波器的输出阻抗Z锯的实部与RF-IC的输入阻抗Zic的实部非常匹配。阻抗匹配电路根据RF-IC 20的输入阻抗Zic的虚部来修正SAW滤波器模块的输出阻抗Zm的虚部。由一片电感或电容器构成的阻抗匹配电路或多个并联的电感器或电容器在模块基板上形成为印刷图案，其中实部R锯和实部Ric的关系接近0.8 Ric

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式