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    • 91. 发明授权
    • Sensing device and method producing a Raman signal
    • 产生拉曼信号的感测装置和方法
    • US08416406B2
    • 2013-04-09
    • US12914655
    • 2010-10-28
    • Michael Josef StukeShih-Yuan WangZhiyong Li
    • Michael Josef StukeShih-Yuan WangZhiyong Li
    • G01J3/44
    • B82Y15/00G01N21/65G01N21/658
    • A sensing device that produces a Raman signal includes micro-rods or nano-rods arranged on a substrate in a two-dimensional (2D) array, each of the rods having a length in a single row being substantially the same, with the rod length of each row being different from the rod length of each other row. Each row of rods has a respective resonant vibration frequency that varies from row to row. A source of vibration energy, operatively connected to the substrate, excites vibration in each of the rods such that a responding row resonates when an exciting frequency approaches the resonant vibration frequency of the responding row. A method includes exposing the 2D array to a light source and analyzing Raman scattering at each rod of the 2D array to render a Raman map.
    • 产生拉曼信号的感测装置包括以二维(2D)阵列布置在基底上的微棒或纳米棒,每根棒具有基本上相同的长度,其中棒长度 每行的距离与每隔一行的杆长度不同。 每排棒具有相应的谐振振动频率,其逐行变化。 可操作地连接到基板的振动能量源激发每个杆中的振动,使得当激励频率接近响应行的谐振振动频率时,响应行谐振。 一种方法包括将2D阵列暴露于光源并分析2D阵列的每个杆处的拉曼散射以呈现拉曼图。
    • 92. 发明授权
    • Memristors with an electrode metal reservoir for dopants
    • 具有用于掺杂剂的电极金属储存器的忆阻器
    • US08325507B2
    • 2012-12-04
    • US12893825
    • 2010-09-29
    • Jianhua YangWei YiMichael Josef StukeShih-Yuan Wang
    • Jianhua YangWei YiMichael Josef StukeShih-Yuan Wang
    • H01L29/8605H01L21/04G11C11/21
    • H01L45/1233H01L27/2463H01L45/08H01L45/1266H01L45/145H01L45/146H01L45/1658
    • A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
    • 忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。 有源区域具有由电场引起的非导电部分和掺杂剂源部分。 非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。 非导电部分与第一电极接触,并且掺杂剂源部分与第二电极接触。 第二电极包括用于掺杂剂的金属储存器。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。