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    • 92. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07649238B2
    • 2010-01-19
    • US12108369
    • 2008-04-23
    • Tetsuya WatanabeTakashi Ipposhi
    • Tetsuya WatanabeTakashi Ipposhi
    • H01L29/06H01L27/12
    • H01L21/84H01L27/1203H01L29/78615
    • In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.
    • 在PMOS晶体管中,源极 - 漏极区域沿着栅极宽度分成四个部分,并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触,使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触,并且身体区域的电位通过井身区域从身体绑定 地区。
    • 96. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07391095B2
    • 2008-06-24
    • US11555923
    • 2006-11-02
    • Tetsuya WatanabeTakashi Ipposhi
    • Tetsuya WatanabeTakashi Ipposhi
    • H01L29/06H01L27/12
    • H01L21/84H01L27/1203H01L29/78615
    • In a PMOS transistor, the source-drain region is divided into four parts along the gate width and has an arrangement of four independent source regions and an arrangement of four independent drain regions. A partial trench isolation insulating film is arranged in contact with the whole of the opposed surfaces between the four source regions in such a manner that the channel region formed under the gate electrode is divided across the channel length. A body-tied region containing N-type impurities relatively high in concentration is arranged in contact with the side surface of the source region opposite to the gate electrode, and the potential of the body region is fixed through the well region from the body-tied region.
    • 在PMOS晶体管中,源极 - 漏极区域沿着栅极宽度分成四个部分,并且具有四个独立源极区域和四个独立漏极区域的布置的布置。 部分沟槽隔离绝缘膜被布置成与四个源极区域之间的整个相对表面接触,使得形成在栅电极下方的沟道区域跨越沟道长度被划分。 包含浓度相对较高的N型杂质的身体绑扎区域与源极区域与栅电极相对的侧表面接触,并且身体区域的电位通过井身区域从身体绑定 地区。
    • 99. 发明申请
    • Wafer surface observing method and apparatus
    • 晶圆表面观察方法及装置
    • US20070269100A1
    • 2007-11-22
    • US11698987
    • 2007-01-29
    • Hiroshi HigashiTetsuya WatanabeKenji Aiko
    • Hiroshi HigashiTetsuya WatanabeKenji Aiko
    • G06K9/00
    • G01N21/9501G01N21/9503
    • A wafer surface observing apparatus for inspecting a peripheral portion of an object has (A) a lens system and a CCD camera for taking images of the peripheral portion of the object, (B) storage for storing image data about the taken images, and (C) display for displaying the image data stored in the storage device. In particular, the present apparatus can have functions of rotating the object placed on a prealignment portion, recording images of one full outer periphery of an end portion of the object by the lens system and CCD camera into the location where the orientation flat portions or notched portions of the object are placed in position, accepting the images into the storage device, and displaying the images on a CRT.
    • 用于检查物体的周边部分的晶片表面观察装置具有(A)用于拍摄物体的周边部分的图像的透镜系统和CCD照相机,(B)用于存储关于拍摄图像的图像数据的存储器和( C)显示用于显示存储在存储装置中的图像数据。 具体地说,本装置具有使放置在预对准部上的物体旋转的功能,通过透镜系统和CCD照相机将物体的端部的一个完整外周的图像记录到定位平面部分或切口的位置 将物体的部分放置在适当位置,将图像接收到存储装置中,并将图像显示在CRT上。
    • 100. 发明申请
    • Process for producing triarylsulfonium salt
    • US20070083060A1
    • 2007-04-12
    • US10576299
    • 2004-10-04
    • Motoshige SuminoKazuhito FukasawaShigeaki ImazekiTetsuya Watanabe
    • Motoshige SuminoKazuhito FukasawaShigeaki ImazekiTetsuya Watanabe
    • C07C319/22
    • C07C381/12
    • [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R1's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R1; and A1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX   [2]wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA1   [3] wherein, A1 represents the same as above, or a salt thereof.