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1. 发明授权

US08329008B2 Gas generating device and carbon electrode for gas generation 有权
标题翻译：气体发生装置和气体发生用碳电极
公开(公告)号：US08329008B2
公开(公告)日：2012-12-11
申请号：US12596911
申请日：2008-04-22
申请人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Takahiro Maeda , Kentaro Suzuki , Tetsuya Watanabe
发明人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Takahiro Maeda , Kentaro Suzuki , Tetsuya Watanabe
IPC分类号： C25B9/06
CPC分类号： C25B11/03 , C25B1/245 , C25B11/12
摘要： A gas generating device of present invention is generated a first gas at a first carbon electrode by applying a voltage between said first carbon electrode and a second electrode to electrolyzing an electrolytic solution. The first carbon electrode is an anode or a cathode. The first carbon electrode is provided with a plurality of fine gas flow channels which selectively pass said first gas generated on one surface of said first carbon electrode to the other surface without allowing said electrolytic solution to permeate therethrough.
摘要翻译：本发明的气体发生装置通过在所述第一碳电极和第二电极之间施加电压来电解电解液，在第一碳电极处产生第一气体。第一碳电极是阳极或阴极。第一碳电极设置有多个精细气体流动通道，其选择性地将在所述第一碳电极的一个表面上产生的第一气体传递到另一表面，而不允许所述电解液渗透通过。

2. 发明授权

US08323587B2 Microchip device 失效
标题翻译： Microchip器件
公开(公告)号：US08323587B2
公开(公告)日：2012-12-04
申请号：US12091095
申请日：2006-10-23
申请人： Kentaro Suzuki , Mitsuru Sadamoto , Tetsuya Watanabe , Hiroshi Maekawa
发明人： Kentaro Suzuki , Mitsuru Sadamoto , Tetsuya Watanabe , Hiroshi Maekawa
IPC分类号： B01L3/00 , G01N1/10
CPC分类号： G01N27/44791 , B01D3/00 , B01J19/0093 , B01J2219/00783 , B01J2219/00837 , B01J2219/00853 , B01J2219/0086 , B01J2219/00873 , B01J2219/00889 , B01J2219/00891 , B01L3/502723 , B01L3/502769 , B01L2200/0684 , B01L2300/089 , B01L2300/1827 , B01L2400/046 , Y10T436/2575
摘要： A microchip device of the present invention includes: a microchip in which a liquid flow path is formed for liquid to flow; a gas flow path provided along the liquid flow path; and a plurality of gap sections formed between the liquid flow path and the gas flow path and having one opening thereof facing the liquid flow path and the other opening thereof facing the gas flow path, the gap of the gap section being made so as to be gap through which gas can pass but the liquid cannot pass, and a gas liquid interface being formed at the gap section.
摘要翻译：本发明的微芯片装置包括：微芯片，其中形成有用于液体流动的液体流路; 沿着液体流路设置的气体流路; 以及多个间隙部，形成在所述液体流路和所述气体流路之间，并且具有面向所述液体流路的一个开口和面向所述气体流路的所述另一个开口，所述间隙部分的间隙被制成为气体可以通过但液体不能通过的间隙，以及在间隙部分处形成的气体液体界面。

3. 发明申请

US20100116649A1 GAS GENERATING DEVICE AND CARBON ELECTRODE FOR GAS GENERATION 有权
标题翻译：气体发生装置和用于气体发生的碳电极
公开(公告)号：US20100116649A1
公开(公告)日：2010-05-13
申请号：US12596911
申请日：2008-04-22
申请人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Takahiro Maeda , Kentaro Suzuki , Tetsuya Watanabe
发明人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Takahiro Maeda , Kentaro Suzuki , Tetsuya Watanabe
IPC分类号： C25B11/03
CPC分类号： C25B11/03 , C25B1/245 , C25B11/12
摘要： A gas generating device of present invention is generated a first gas at a first carbon electrode by applying a voltage between said first carbon electrode and a second electrode to electrolyzing an electrolytic solution. The first carbon electrode is an anode or a cathode. The first carbon electrode is provided with a plurality of fine gas flow channels which selectively pass said first gas generated on one surface of said first carbon electrode to the other surface without allowing said electrolytic solution to permeate therethrough.
摘要翻译：本发明的气体发生装置通过在所述第一碳电极和第二电极之间施加电压来电解电解液，在第一碳电极处产生第一气体。第一碳电极是阳极或阴极。第一碳电极设置有多个精细气体流动通道，其选择性地将在所述第一碳电极的一个表面上产生的第一气体传递到另一表面，而不允许所述电解液渗透通过。

4. 发明申请

US20100126875A1 ELECTROLYZER, ELECTRODES USED THEREFOR, AND ELECTROLYSIS METHOD 有权
标题翻译：电解质，其使用的电极和电解方法
公开(公告)号：US20100126875A1
公开(公告)日：2010-05-27
申请号：US12596767
申请日：2008-04-17
申请人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Shin Fukuda , Kentaro Suzuki , Tetsuya Watanabe , Katsumi Isozaki
发明人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Shin Fukuda , Kentaro Suzuki , Tetsuya Watanabe , Katsumi Isozaki
IPC分类号： C25B1/24 , C25B9/00
CPC分类号： C25B11/03 , C25B1/245
摘要： An electrolyzer is comprised of an anode and a cathode which are in contact with an electrolytic solution, wherein at least one of the anode and the cathode is composed of an electric conductor having a gas permeable structure comprising a gas generating surface at which gas is generated by electrolysis of the electrolytic solution, a plurality of through holes leading from the gas generating surface to a different surface and allowing the gas generated on the gas generating surface to selectively pass therethrough, and a gas releasing surface which is the different surface for releasing the gas supplied from the gas generating surface via the through holes. At least one of a surface treatment which causes the gas generating surface to be lyophilic for the electrolytic solution and a surface treatment which causes the gas releasing surface to be lyophobic for the electrolytic solution is performed.
摘要翻译：电解槽由与电解液接触的阳极和阴极组成，其中阳极和阴极中的至少一个由具有透气结构的电导体构成，该透气结构包括产生气体的气体产生表面通过电解电解液，从气体发生表面引导到不同表面的多个通孔，并允许在气体发生表面上产生的气体选择性地通过其中;以及气体释放表面，其是不同的表面，用于释放从气体发生表面通过通孔供应的气体。执行使气体产生表面对于电解液是亲液的表面处理和使排气表面为电解液疏液的表面处理中的至少一种。

5. 发明授权

US08771497B2 Electrolyzer, electrodes used therefor, and electrolysis method 有权
标题翻译：电解器，使用的电极和电解法
公开(公告)号：US08771497B2
公开(公告)日：2014-07-08
申请号：US12596767
申请日：2008-04-17
申请人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Shin Fukuda , Kentaro Suzuki , Tetsuya Watanabe , Katsumi Isozaki
发明人： Hiroshi Maekawa , Mitsuru Sadamoto , Souta Itou , Shin Fukuda , Kentaro Suzuki , Tetsuya Watanabe , Katsumi Isozaki
IPC分类号： C25B1/24 , C25B9/06 , C25B11/03
CPC分类号： C25B11/03 , C25B1/245
摘要： An electrolyzer is comprised of an anode and a cathode which are in contact with an electrolytic solution, wherein at least one of the anode and the cathode is composed of an electric conductor having a gas permeable structure comprising a gas generating surface at which gas is generated by electrolysis of the electrolytic solution, a plurality of through holes leading from the gas generating surface to a different surface and allowing the gas generated on the gas generating surface to selectively pass therethrough, and a gas releasing surface which is the different surface for releasing the gas supplied from the gas generating surface via the through holes. At least one of a surface treatment which causes the gas generating surface to be lyophilic for the electrolytic solution and a surface treatment which causes the gas releasing surface to be lyophobic for the electrolytic solution is performed.
摘要翻译：电解槽由与电解液接触的阳极和阴极组成，其中阳极和阴极中的至少一个由具有透气结构的电导体构成，该透气结构包括产生气体的气体产生表面通过电解电解液，从气体发生表面引导到不同表面的多个通孔，并允许在气体发生表面上产生的气体选择性地通过其中;以及气体释放表面，其是不同的表面，用于释放从气体发生表面通过通孔供应的气体。执行使气体产生表面对于电解液是亲液的表面处理和使排气表面为电解液疏液的表面处理中的至少一种。

6. 发明申请

US20090263288A1 MICROCHIP DEVICE 失效
标题翻译： MICROCHIP设备
公开(公告)号：US20090263288A1
公开(公告)日：2009-10-22
申请号：US12091095
申请日：2006-10-23
申请人： Kentaro Suzuki , Mitsuru Sadamoto , Tetsuya Watanabe , Hiroshi Maekawa
发明人： Kentaro Suzuki , Mitsuru Sadamoto , Tetsuya Watanabe , Hiroshi Maekawa
IPC分类号： B01L3/00
CPC分类号： G01N27/44791 , B01D3/00 , B01J19/0093 , B01J2219/00783 , B01J2219/00837 , B01J2219/00853 , B01J2219/0086 , B01J2219/00873 , B01J2219/00889 , B01J2219/00891 , B01L3/502723 , B01L3/502769 , B01L2200/0684 , B01L2300/089 , B01L2300/1827 , B01L2400/046 , Y10T436/2575
摘要： A microchip device of the present invention includes: a microchip in which a liquid flow path is formed for liquid to flow; a gas flow path provided along the liquid flow path; and a plurality of gap sections formed between the liquid flow path and the gas flow path and having one opening thereof facing the liquid flow path and the other opening thereof facing the gas flow path, the gap of the gap section being made so as to be gap through which gas can pass but the liquid cannot pass, and a gas liquid interface being formed at the gap section.
摘要翻译：本发明的微芯片装置包括：微芯片，其中形成有用于液体流动的液体流路; 沿着液体流路设置的气体流路; 以及多个间隙部，形成在所述液体流路和所述气体流路之间，并且具有面向所述液体流路的一个开口和面向所述气体流路的所述另一个开口，所述间隙部分的间隙被制成为气体可以通过但液体不能通过的间隙，以及在间隙部分处形成的气体液体界面。

7. 发明授权

US09528189B2 Gas generating device and method for generating gas 有权
标题翻译：气体发生装置及产生气体的方法
公开(公告)号：US09528189B2
公开(公告)日：2016-12-27
申请号：US13394994
申请日：2010-09-08
申请人： Keiji Ueno , Mitsuru Sadamoto , Hiroko Wachi , Hiroshi Maekawa
发明人： Keiji Ueno , Mitsuru Sadamoto , Hiroko Wachi , Hiroshi Maekawa
IPC分类号： C25B1/00
CPC分类号： C25B1/003 , Y02E60/364 , Y02E60/368
摘要： A gas generating device for generating an oxygen gas and/or a hydrogen gas from an electrolytic solution containing water, including an anode electrode, a cathode electrode, a plurality of through holes and a gas containing unit. The anode electrode (photocatalyst supporting electrode) has a photocatalyst-containing layer containing a photocatalyst producing an oxygen gas from the electrolytic solution by a photocatalytic reaction. The cathode electrode produces a hydrogen gas from electrons and hydrogen ions that are generated in the electrolytic solution by the photocatalytic reaction at the photocatalyst-containing layer. The through holes are formed on at least one of the anode electrode and the cathode electrode, and the through holes allow the produced oxygen gas or hydrogen gas to pass therethrough, but do not allow the electrolytic solution to pass therethrough. The gas containing unit holds the oxygen gas or hydrogen gas that has passed through the through holes.
摘要翻译：一种用于从包含阳极电极，阴极电极，多个通孔和气体容纳单元的含水的电解液产生氧气和/或氢气的气体发生装置。阳极（光催化剂辅助电极）具有含有光催化剂的层，该光催化剂层含有通过光催化反应从电解液生成氧气的光催化剂。阴极通过在含光催化剂层的光催化反应在电解液中产生的电子和氢离子产生氢气。通孔形成在阳极电极和阴极电极中的至少一个上，并且通孔使所产生的氧气或氢气通过，但不允许电解液通过。含气单元保持通过通孔的氧气或氢气。

8. 发明申请

US20120168318A1 GAS GENERATING DEVICE AND METHOD FOR GENERATING GAS 有权
标题翻译：气体发生装置和产生气体的方法
公开(公告)号：US20120168318A1
公开(公告)日：2012-07-05
申请号：US13394994
申请日：2010-09-08
申请人： Keiji Ueno , Mitsuru Sadamoto , Hiroko Wachi , Hiroshi Maekawa
发明人： Keiji Ueno , Mitsuru Sadamoto , Hiroko Wachi , Hiroshi Maekawa
IPC分类号： C25B9/00 , C25B11/03 , C25B1/02
CPC分类号： C25B1/003 , Y02E60/364 , Y02E60/368
摘要： A gas generating device for generating an oxygen gas and/or a hydrogen gas from an electrolytic solution containing water, including an anode electrode, a cathode electrode, a plurality of through holes and a gas containing unit. The anode electrode (photocatalyst supporting electrode) has a photocatalyst-containing layer containing a photocatalyst producing an oxygen gas from the electrolytic solution by a photocatalytic reaction. The cathode electrode produces a hydrogen gas from electrons and hydrogen ions that are generated in the electrolytic solution by the photocatalytic reaction at the photocatalyst-containing layer. The through holes are formed on at least one of the anode electrode and the cathode electrode, and the through holes allow the produced oxygen gas or hydrogen gas to pass therethrough, but do not allow the electrolytic solution to pass therethrough. The gas containing unit holds the oxygen gas or hydrogen gas that has passed through the through holes.
摘要翻译：一种用于从包含阳极电极，阴极电极，多个通孔和气体容纳单元的含水的电解液产生氧气和/或氢气的气体发生装置。阳极（光催化剂辅助电极）具有含有光催化剂的层，该光催化剂层含有通过光催化反应从电解液生成氧气的光催化剂。阴极通过在含光催化剂层的光催化反应在电解液中产生的电子和氢离子产生氢气。通孔形成在阳极电极和阴极电极中的至少一个上，并且通孔使所产生的氧气或氢气通过，但不允许电解液通过。含气单元保持通过通孔的氧气或氢气。

9. 发明授权

US5677236A Process for forming a thin microcrystalline silicon semiconductor film 失效
标题翻译：用于形成薄的微晶硅半导体膜的工艺
公开(公告)号：US5677236A
公开(公告)日：1997-10-14
申请号：US605609
申请日：1996-02-22
申请人： Kimihiko Saitoh , Nobuyuki Ishiguro , Mitsuru Sadamoto , Shin Fukuda , Yoshinori Ashida , Nobuhiro Fukuda
发明人： Kimihiko Saitoh , Nobuyuki Ishiguro , Mitsuru Sadamoto , Shin Fukuda , Yoshinori Ashida , Nobuhiro Fukuda
IPC分类号： H01L31/036 , H01L31/0368 , H01L31/0392 , H01L31/076 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L31/036 , H01L31/03685 , H01L31/03921 , H01L31/1824 , H01L31/202 , H01L31/204 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.
摘要翻译：适合用作非晶硅太阳能电池等中的本征半导体层的薄的微晶硅半导体膜。薄的微晶硅半导体膜包括非晶相，其中包含棱柱形或锥形微晶聚集相形式的微晶。另外的微晶可以作为单晶体在非晶相中分散。在薄膜中，结晶部分优选为5〜80％，微晶尺寸优选为2〜1000nm。该薄膜可以通过首先在基板上以0.01nm / sec至0.1nm / sec的沉积速率首先在2nm至100nm的范围内形成初始膜，然后形成主膜，例如，根据RF等离子体CVD，沉积速率为0.1nm / sec至2nm / sec。

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