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91. 发明授权

US07057327B2 Vehicular alternator 失效
公开(公告)号：US07057327B2
公开(公告)日：2006-06-06
申请号：US09941655
申请日：2001-08-30
申请人： Hiroshi Kanazawa , Kenji Miyata , Kaoru Kawabata , Kohji Maki , Kazuo Tahara , Susumu Sasaki , Ryoichi Takahata
发明人： Hiroshi Kanazawa , Kenji Miyata , Kaoru Kawabata , Kohji Maki , Kazuo Tahara , Susumu Sasaki , Ryoichi Takahata
IPC分类号： H02K1/22
CPC分类号： H02K21/044
摘要： A vehicular alternator is provided which can effectively utilize the magnetic flux of a permanent magnet disposed between claw-type magnetic poles and can improve an output of the alternator. The vehicular alternator comprises a rotor and a stator constituted by coiling stator windings over a stator core, the rotor comprising a pair of claw-type magnetic poles arranged in an opposed relation, a permanent magnet disposed between adjacent two of a plurality of claws provided on the pair of claw-type magnetic poles, and field windings coiled radially inward of the plurality of claws. Each of the plurality of claws of the rotor is formed to have a shape coming into contact with the whole of a magnetic pole surface of the permanent magnet.

92. 发明申请

US20050082959A1 Emissive display device 审中-公开
标题翻译：发射显示装置
公开(公告)号：US20050082959A1
公开(公告)日：2005-04-21
申请号：US10971508
申请日：2004-10-22
申请人： Susumu Sasaki , Yoshiyuki Kaneko , Shigemi Hirasawa , Yuuichi Kijima , Kenji Miyata
发明人： Susumu Sasaki , Yoshiyuki Kaneko , Shigemi Hirasawa , Yuuichi Kijima , Kenji Miyata
IPC分类号： H01J29/04 , H01J1/304 , H01J9/02 , H01J31/12 , H01J1/00 , H01J1/05 , H01J1/14 , H01J1/62
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30446 , H01J2201/30469
摘要： To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.
摘要翻译：为了获得能够提高碳纳米管的耐热性的电子源用糊料，即使在高温加热时也能够抑制碳纳米管的烧尽，并且能够发挥高的电子发射性能，可以向硼（B）中添加硼该糊状物由碳纳米管和金属形成。由于添加硼，可以抑制碳纳米管的氧化，并且可以防止在诸如烘烤的加热过程中电子发射特性的劣化和电子发射均匀性的劣化。

93. 发明申请

US20050022572A1 Method of making a metallic thin wire and a medical tool into which the metallic thin wire is incorporated 审中-公开
标题翻译：制造金属细线的方法和金属细线并入其中的医疗工具
公开(公告)号：US20050022572A1
公开(公告)日：2005-02-03
申请号：US10874756
申请日：2004-06-24
申请人： Tomihisa Kato , Kenji Miyata
发明人： Tomihisa Kato , Kenji Miyata
IPC分类号： A61M25/01 , A61M25/09 , A61M25/16 , B21C37/04 , B21F7/00 , B21F99/00 , C21D1/30 , C21D7/10 , C21D8/06 , C21D9/52 , B21D11/14
CPC分类号： B21F99/00 , A61M25/0133 , A61M25/09 , A61M2025/09108 , A61M2025/09191 , B21C37/045 , B21F7/00 , C21D1/30 , C21D7/10 , C21D8/065 , Y10T29/5121 , Y10T29/5187
摘要： In a method of making a metallic thin wire (1), one single metallic thin wire (2) is prepared to have a predetermined length with a middle portion of the one single metallic thin wire (2) as a fixed portion. Front and rear half portions of the one single metallic thin wire (2) are twisted with the front and rear portions being symmetrically located at both sides of the fixed portion, while at the same time, applying a tensile weight (W) to the front and rear half portions in the lengthwise direction. The one single metallic thin wire (2) is processed with a heat treatment to remove a residual stress from the one single metallic thin wire (2). Otherwise, the front and rear portions of the one single metallic thin wire (2) is primarily and secondarily twisted alternately under the tensile weight (W) applied in the lengthwise direction. This provides the metallic thin wire (1) with a high rotation-following capability and high torque transmissibility, thus enabling artisans to usefully apply the metallic thin wire (1) to a main wire component (25) of a medical tool and equipment.
摘要翻译：在制造金属细线（1）的方法中，制备一根单金属细线（2），其中一根单金属细线（2）的中间部分为固定部分，具有预定长度。单个金属细线（2）的前半部分和后半部分被扭曲，前部和后部对称地位于固定部分的两侧，同时向前部施加拉伸重量（W）和沿长度方向的后半部分。单个金属细线（2）通过热处理进行处理，以从单个金属细线（2）去除残余应力。否则，一根单一金属细线（2）的前部和后部在长度方向施加的拉伸重量（W）下交替地主要和次要扭转。这提供了具有高的旋转跟随能力和高扭矩传递性的金属细线（1），从而使得工匠能够将金属细线（1）有效地施加到医疗工具和设备的主线部件（25）。

94. 发明授权

US4992745A Method of synchrotron acceleration and circular accelerator 失效
标题翻译：同步加速度和循环加速器的方法
公开(公告)号：US4992745A
公开(公告)日：1991-02-12
申请号：US277989
申请日：1988-11-30
申请人： Junichi Hirota , Kenji Miyata , Masatsugu Nishi , Akinori Shibayama
发明人： Junichi Hirota , Kenji Miyata , Masatsugu Nishi , Akinori Shibayama
IPC分类号： H05H7/02 , H05H13/04
CPC分类号： H05H7/02
摘要： When accelerating charged particles on synchrotron acceleration basis by using a circular accelerator having a RF acceleration cavity, the detuned amount representative of an offset between oscillation frequency of a RF oscillator for the RF acceleration cavity and resoance frequency of the RF acceleration cavity and the RF power for supplying the charged particles with energy are controlled in compliance with changes in energy of the charged particles without changing the oscillation frequency. A great number of charged particles injected into the circular accelerator can be accelerated to the ultimate storage energy during the acceleration on synchrotron acceleration basis without causing charged particle beam loss.

95. 发明授权

US4954855A Thin film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US4954855A
公开(公告)日：1990-09-04
申请号：US113360
申请日：1987-10-28
申请人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
发明人： Akio Mimura , Yoshikazu Hosokawa , Takaya Suzuki , Takashi Aoyama , Nobutake Konishi , Yutaka Misawa , Kenji Miyata
IPC分类号： H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/456 , H01L29/458 , H01L29/4908 , H01L29/7866 , H01L29/78675
摘要： A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.
摘要翻译：公开了一种形成在绝缘硅片上的薄膜晶体管，其中金属硅化物层形成在由单晶，多晶或非晶半导体材料制成的薄膜中，用作源极和漏极区域，并且还包括一个栅电极金属硅化物层。

96. 发明授权

US4812774A Electron beam stabilizing method for electron storing ring, and electron storing ring system 失效
标题翻译：电子储存环的电子束稳定方法和电子储存环系统
公开(公告)号：US4812774A
公开(公告)日：1989-03-14
申请号：US130234
申请日：1987-10-23
申请人： Koji Tsumaki , Kenji Miyata , Masatsugu Nishi
发明人： Koji Tsumaki , Kenji Miyata , Masatsugu Nishi
IPC分类号： H05H7/06 , H05H13/00 , H05H13/04 , H05H7/00
CPC分类号： H05H13/04 , H05H13/00 , H05H7/06
摘要： In an electron storage ring comprising: a bending magnet for bending an electron beam; a focusing magnet for focusing the electron beam; a radio-frequency accelerating cavity for accelerating electrons; and a vacuum chamber, a voltage component fluctuating with time, e.g., sinusoidally is superposed on the power source of the focusing magnet, in case the electron beam is to be accelerated, to fluctuate the intensity of the focusing magnet. As a result, the number of the betatron oscillation of electron can be changed each time the electrons pass through the focusing magnet so that the damping rate can become higher than the growth rate of the instability of the beam to suppress the instability of the electron beam.

97. 发明授权

US4733132A High energy accelerator 失效
标题翻译：高能加速器
公开(公告)号：US4733132A
公开(公告)日：1988-03-22
申请号：US845347
申请日：1986-03-28
申请人： Kenji Miyata , Masatsugu Nishi
发明人： Kenji Miyata , Masatsugu Nishi
IPC分类号： H05H9/00 , H01J25/10
CPC分类号： H05H9/00
摘要： In an accelerator for accelerating charged particles by using electro-magnetic wave, in which a plurality of cells are disposed periodically, a washer-shaped electrode separated from the cylinder wall is located at the boundary of each of the cells, which electrode has a hole, through which accelerated charged particles pass, at its center portion and an approximately uniform thickness. The thickness and the diameter of said washer-shaped electrode and the gap between said washer-shaped electrode and the inner surface of said cylinder are so chosen that the average strength of the accelerating electric field is highest. The peak strengths of the electric field are approximately equal at the outer and inner peripheral portions of said washer-shaped electrode.
摘要翻译：在通过使用其中周期性地设置多个电池的电磁波加速带电粒子的加速器中，与气缸壁分离的垫圈状电极位于每个电池的边界，该电极具有孔加速的带电粒子在其中心部分通过，大致均匀的厚度。所述垫圈状电极的厚度和直径以及所述垫圈状电极和所述气缸的内表面之间的间隙被选择为使得加速电场的平均强度最高。电场的峰值强度在所述垫圈状电极的外周和外周部分大致相等。

98. 发明授权

US4641526A Method and apparatus for estimating sound source position 失效
标题翻译：用于估计声源位置的方法和装置
公开(公告)号：US4641526A
公开(公告)日：1987-02-10
申请号：US617500
申请日：1984-06-05
申请人： Shigeru Izumi , Makoto Senoh , Koji Tsumaki , Kenji Miyata
发明人： Shigeru Izumi , Makoto Senoh , Koji Tsumaki , Kenji Miyata
IPC分类号： G01B17/00 , G01S5/18 , G01S5/22 , G01N29/00
CPC分类号： G01S5/18
摘要： Method and apparatus for estimating the location of an unknown sound source in a structure to be monitored, wherein sounds from at least three known sound sources are detected by a plurality of detectors. At least one of peak value data and signal arrival time data derived from the outputs of the detectors are classified for each of the known sound sources and stored in a storage. Pattern differences from each of the known sound sources to a number of predetermined positions respectively, are calculated to prepare for each of the known sound sources a correspondence table indicating relationships between the calculated pattern difference and the real distances from the known sound source positions to the predetermined positions, the correspondence table being stored in a storage. The pattern differences for each of the known sound source positions are calculated on the basis of the sound signal data derived through detection of a sound from an unknown sound source and the data stored in the storage. The real distances each for the known sound source are read out from the correspondence table on the basis of the calculated pattern differences and displayed on a display device to thereby estimate the location of the unknown sound source.
摘要翻译：用于估计要监视的结构中的未知声源的位置的方法和装置，其中来自至少三个已知声源的声音由多个检测器检测。从检测器的输出导出的峰值数据和信号到达时间数据中的至少一个被分类用于每个已知声源并存储在存储器中。计算每个已知声源到多个预定位置的图案差异，以便为每个已知声源准备对应表，该对应表指示所计算的图案差异与从已知声源位置到实际距离之间的关系预定位置，对应表被存储在存储器中。基于通过检测来自未知声源的声音和存储在存储器中的数据导出的声音信号数据来计算每个已知声源位置的图案差异。基于计算出的图案差异，从对应表中读出已知声源的实际距离，并显示在显示装置上，从而估计未知声源的位置。

99. 发明授权

US4514747A Field controlled thyristor with double-diffused source region 失效
标题翻译：具有双扩散源极区域的场控晶闸管
公开(公告)号：US4514747A
公开(公告)日：1985-04-30
申请号：US357594
申请日：1982-03-12
申请人： Kenji Miyata , Yoshio Terasawa , Saburo Oikawa , Susumu Murakami , Masahiro Okamura
发明人： Kenji Miyata , Yoshio Terasawa , Saburo Oikawa , Susumu Murakami , Masahiro Okamura
IPC分类号： H01L29/08 , H01L29/10 , H01L29/744 , H01L29/74
CPC分类号： H01L29/744 , H01L29/0834 , H01L29/1066
摘要： Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.
摘要翻译：公开了一种场控晶闸管，其中N +型的第一半导体区域，N型的第二半导体区域，P型的第三半导体区域，N型的第四半导体区域和P + 型形成在具有两个主表面的半导体衬底中，第一，第二和第三半导体区域暴露在第一主表面中，第五半导体区域暴露在第二主表面中; 并且P型的第三半导体区域彼此隔开预定间隔。第三半导体区域与暴露在第一主表面中的暴露表面的半导体区域连接。第二半导体区域中的杂质浓度从第一半导体区域朝向第三半导体区域减小，从而可以实现高反向阻断电压的低正向压降。还公开了通过单独的扩散处理形成第三半导体区域和表面暴露的半导体区域的方法。

100. 发明授权

US4146906A Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity 失效
标题翻译：具有不同电阻率的多晶层的低向前电压下降半导体器件
公开(公告)号：US4146906A
公开(公告)日：1979-03-27
申请号：US762128
申请日：1977-01-24
申请人： Kenji Miyata , Mitsuru Ura , Takuzo Ogawa
发明人： Kenji Miyata , Mitsuru Ura , Takuzo Ogawa
IPC分类号： H01L29/73 , H01L21/225 , H01L21/331 , H01L29/04 , H01L29/74 , H01L29/861
CPC分类号： H01L29/861 , H01L21/2257 , H01L29/04 , H01L29/74 , Y10S148/122
摘要： A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

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