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91. 发明申请

US20120267703A1 Information Storage Medium Using Nanocrystal Particles, Method of Manufacturing the Information Storage Apparatus Including the Information Storage Medium 有权
标题翻译：使用纳米晶粒子的信息存储介质，包括信息存储介质的信息存储设备的制造方法
公开(公告)号：US20120267703A1
公开(公告)日：2012-10-25
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： H01L29/792 , H01L21/28 , B82Y10/00 , B82Y40/00
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

92. 发明授权

US08064324B2 Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same 失效
标题翻译：电场效应读/写头，其制造方法以及具有该电磁场效应的写字头效果存储装置
公开(公告)号：US08064324B2
公开(公告)日：2011-11-22
申请号：US12126427
申请日：2008-05-23
申请人： Hyoung-soo Ko , Seung-bum Hong , Chul-min Park , Dae-young Jeon
发明人： Hyoung-soo Ko , Seung-bum Hong , Chul-min Park , Dae-young Jeon
IPC分类号： G11B9/00
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.
摘要翻译：一种用于使用电场效应从铁电记录介质上记录/再现信息的电场效应读/写头包括半导体衬底，形成在半导体衬底的面对铁电记录介质的上表面的凹部，以及记录/再现部分。

93. 发明授权

US07897415B2 Ferroelectric recording medium and method of manufacturing the same 有权
标题翻译：铁电记录介质及其制造方法
公开(公告)号：US07897415B2
公开(公告)日：2011-03-01
申请号：US12637484
申请日：2009-12-14
申请人： Simon Buehlmann , Seung-bum Hong
发明人： Simon Buehlmann , Seung-bum Hong
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/20
CPC分类号： G11B9/02 , Y10S977/947 , Y10T428/31678
摘要： Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.
摘要翻译：提供铁电记录介质及其制造方法。铁电记录介质包括基板，形成在基板上的多个支撑层，每个支撑层具有至少两个侧表面; 以及形成在支撑层的侧表面上的数据记录层。第一和第二数据记录层可以分别设置在每个支撑层的两个相对的侧表面上。支撑层可以是具有至少三个侧表面的多边形柱。多个支撑层可以以二维阵列的均匀间隔设置。

94. 发明授权

US07787208B2 Bit patterned medium having super-track, method of tracking track of bit patterned medium, head appropriate for bit patterned medium, and information recording/reproducing apparatus including bit patterned medium head 失效
标题翻译：具有超轨道的位图形介质，位图形介质的跟踪轨迹，适用于位图形介质的头，以及包括位图案化介质头的信息记录/再现设备
公开(公告)号：US07787208B2
公开(公告)日：2010-08-31
申请号：US12111217
申请日：2008-04-29
申请人： Dong-ki Min , Seung-bum Hong
发明人： Dong-ki Min , Seung-bum Hong
IPC分类号： G11B5/596
CPC分类号： G11B5/59688 , B82Y10/00 , G11B5/743 , G11B5/82
摘要： Provided are a bit patterned medium having a super-track, a method of tracking a track of the bit patterned medium, a head appropriate for the bit patterned medium, and an information recording/reproducing apparatus including the bit patterned medium and the head. The bit patterned medium includes a substrate, and a recording layer comprised of a plurality of bit cells which are formed on the substrate by being separated from each other, along a plurality of tracks. Each of the plurality of tracks includes a super-track comprised of a plurality of sub-tracks. Bit cells formed on a sub-track from among the plurality of sub-tracks in the super-track are disposed so as to deviate from bit cells formed on another sub-track from among the plurality of sub-tracks in the super-track. A track ID (identification) for recognizing the super-track, and a servo burst generating a position error signal when a head tracks the super-track, are arranged in an area of each of the plurality of tracks. Meanwhile, the head includes a writing head recording information in units of sub-tracks, and a reading sensor reproducing the information in units of super-tracks.
摘要翻译：提供了具有超轨迹的位图形介质，跟踪位图形介质的轨迹的方法，适用于位图形介质的头，以及包括位图形介质和头的信息记录/再现设备。位图案化介质包括衬底，以及由多个位单元构成的记录层，它们通过沿着多个轨道彼此分离而形成在衬底上。多个轨道中的每一个包括由多个子轨道组成的超轨道。在超轨道中的多个子轨道中的子轨道上形成的比特单元被布置成偏离在超轨道中的多个子轨道中形成在另一个子轨道上的比特单元。用于识别超轨道的轨道ID（识别）以及当磁头跟踪超轨迹时产生位置误差信号的伺服脉冲串被布置在多个磁道中的每一个的区域中。同时，头包括以子轨为单位记录信息的写入头，以及以超轨为单位再现信息的读取传感器。

95. 发明授权

US07660146B2 Ferroelectric recording medium 失效
标题翻译：铁电记录介质
公开(公告)号：US07660146B2
公开(公告)日：2010-02-09
申请号：US11494505
申请日：2006-07-28
申请人： Simon Buehlmann , Seung-bum Hong
发明人： Simon Buehlmann , Seung-bum Hong
IPC分类号： G11C11/22
CPC分类号： G11B9/02 , Y10S977/947 , Y10T428/31678
摘要： Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.
摘要翻译：提供铁电记录介质及其制造方法。铁电记录介质包括基板，形成在基板上的多个支撑层，每个支撑层具有至少两个侧表面; 以及形成在支撑层的侧表面上的数据记录层。第一和第二数据记录层可以分别设置在每个支撑层的两个相对的侧表面上。支撑层可以是具有至少三个侧表面的多边形柱。多个支撑层可以以二维阵列的均匀间隔设置。

96. 发明授权

US07599278B2 Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device 失效
标题翻译：包括铁电层的记录介质，包括记录介质的非易失性存储装置，以及用于为存储装置写入和读取数据的方法
公开(公告)号：US07599278B2
公开(公告)日：2009-10-06
申请号：US10925147
申请日：2004-08-25
申请人： Yun-seok Kim , Seung-bum Hong , Kwang-soo No
发明人： Yun-seok Kim , Seung-bum Hong , Kwang-soo No
IPC分类号： G11B9/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/1463 , G11B9/1472 , G11C11/22
摘要： A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.
摘要翻译：包括铁电层的记录介质，包括记录介质的非易失性存储装置以及在存储装置中布线和读取数据的方法。记录介质包括：下电极; 记录有数据的铁电层，形成在下电极上; 形成在强电介质层上的阻挡层; 以及形成在阻挡层上的半导体层。非易失性存储器件包括读取和写入数据的探针。此外，在写入数据的方法中，在与半导体层接触的探针和下部电极之间施加写入电压，并且在读取数据的方法中，强电介质层的剩余极化的状态由在探针和半导体层之间施加读取电压。

97. 发明申请

US20080186837A1 INFORMATION STORAGE MEDIUM USING NANOCRYSTAL PARTICLES, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIUM, AND INFORMATION STORAGE APPARATUS INCLUDING THE INFORMATION STORAGE MEDIUM 有权
标题翻译：使用纳米颗粒的信息存储介质，信息存储介质的制造方法和包括信息存储介质的信息存储设备
公开(公告)号：US20080186837A1
公开(公告)日：2008-08-07
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B3/70 , G11B5/84
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

98. 发明申请

US20060211154A1 Method of manufacturing patterned ferroelectric media 失效
标题翻译：图案化铁电介质的制造方法
公开(公告)号：US20060211154A1
公开(公告)日：2006-09-21
申请号：US11384326
申请日：2006-03-21
申请人： Simon Buehlmann , Seung-bum Hong
发明人： Simon Buehlmann , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B5/743 , B82Y10/00 , G11B9/02 , G11B9/149
摘要： A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.
摘要翻译：一种制造图案化铁电介质的方法，其包括在基底上形成电极; 在电极上形成具有预定图案的特征，所述特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。还公开了一种方法，其包括在基板上形成具有形成在电极的阱中的阱和前体特征的电极，前体特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。上述第一实施例涉及非嵌入式介质，并且上述第二实施例涉及嵌入式介质。

99. 发明申请

US20050147018A1 Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device 失效
标题翻译：包括铁电层的记录介质，包括记录介质的非易失性存储装置，以及用于为存储装置写入和读取数据的方法
公开(公告)号：US20050147018A1
公开(公告)日：2005-07-07
申请号：US10925147
申请日：2004-08-25
申请人： Yun-seok Kim , Seung-bum Hong , Kwang-soo No
发明人： Yun-seok Kim , Seung-bum Hong , Kwang-soo No
IPC分类号： G11B9/00 , G11B9/02 , G11B9/14 , G11C11/22
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/1463 , G11B9/1472 , G11C11/22
摘要： A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.
摘要翻译：包括铁电层的记录介质，包括记录介质的非易失性存储装置以及在存储装置中布线和读取数据的方法。记录介质包括：下电极; 记录有数据的铁电层，形成在下电极上; 形成在强电介质层上的阻挡层; 以及形成在阻挡层上的半导体层。非易失性存储器件包括读取和写入数据的探针。此外，在写入数据的方法中，在与半导体层接触的探针和下部电极之间施加写入电压，并且在读取数据的方法中，强电介质层的剩余极化的状态由在探针和半导体层之间施加读取电压。

100. 发明授权

US06784475B2 Thermally stable ferroelectric memory 失效
标题翻译：热稳定铁电存储器
公开(公告)号：US06784475B2
公开(公告)日：2004-08-31
申请号：US10325731
申请日：2002-12-23
申请人： Seung-bum Hong , Hyun-jung Shin
发明人： Seung-bum Hong , Hyun-jung Shin
IPC分类号： H01L2972
CPC分类号： G11C11/22
摘要： A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.
摘要翻译：提供了热稳定的铁电存储器。铁电存储器包括形成在下电极的顶表面上的下电极和铁电层，使得具有介电极化的区域被设置为位。铁电层的厚度不大于钻头的尺寸。因此，提供了热稳定的非挥发性铁电存储器，从而实现了可以以高速度和高密度存储信息的可靠的存储器，并且具有改善的存储器保持。

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