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91. 发明申请

US20110143051A1 Electrically Conductive Emulsion Ink and Method for Producing Electrically Conductive Thin Film Using the Same 审中-公开
标题翻译：导电乳液油墨及使用其的导电薄膜的制造方法
公开(公告)号：US20110143051A1
公开(公告)日：2011-06-16
申请号：US12961786
申请日：2010-12-07
申请人： Kazunori Ohashi , Hiroyuki Ogawa
发明人： Kazunori Ohashi , Hiroyuki Ogawa
IPC分类号： B05D5/12 , H01B1/22
CPC分类号： C09D11/101 , C09D11/0235 , C09D11/52
摘要： An electrically conductive emulsion ink is provided, which can form an electrically conductive thin film from metal nanoparticles on various substrates at a relatively low temperature in short time with simple procedures.The emulsion ink comprises an oil phase containing metal nanoparticles and a water phase containing a reducing agent for the metal nanoparticles and/or a photocatalyst. An electrically conductive film can be formed by coating or patterning the emulsion ink on a substrate surface, and then subjecting the coated ink to heat treatment and/or ultraviolet irradiation so as to reduce the metal nanoparticles. Heat treatment is preferably conducted at 40-100° C. Ultraviolet irradiation can be performed at room temperature. Preferably, the oil phase comprises a non-aqueous dispersion medium and metal nanoparticles dispersed in the medium, and the metal nanoparticles are obtained by amine reduction method and coated with a protecting agent having a linear or branched alkyl group with 10-20 carbon atoms.
摘要翻译：提供一种导电乳液油墨，其可以在短时间内以简单的程序在相对低的温度下在各种基材上由金属纳米颗粒形成导电薄膜。乳液油墨包含含有金属纳米颗粒的油相和含有金属纳米颗粒和/或光催化剂的还原剂的水相。可以通过在基材表面上涂布或图案化乳液油墨，然后对涂覆的油墨进行热处理和/或紫外线照射以便还原金属纳米颗粒来形成导电膜。热处理优选在40-100℃进行。紫外线照射可以在室温下进行。优选地，油相包含非水分散介质和分散在介质中的金属纳米颗粒，并且通过胺还原法获得金属纳米颗粒，并涂覆有具有10-20个碳原子的直链或支链烷基的保护剂。

92. 发明授权

US07851306B2 Method for forming a flash memory device with straight word lines 有权
标题翻译：用于形成具有直线字线的闪速存储器件的方法
公开(公告)号：US07851306B2
公开(公告)日：2010-12-14
申请号：US12327641
申请日：2008-12-03
申请人： Shenqing Fang , Hiroyuki Ogawa , Kuo-Tung Chang , Pavel Fastenko , Kazuhiro Mizutani , Zhigang Wang
发明人： Shenqing Fang , Hiroyuki Ogawa , Kuo-Tung Chang , Pavel Fastenko , Kazuhiro Mizutani , Zhigang Wang
IPC分类号： H01L21/336
CPC分类号： H01L29/7883 , H01L21/2652 , H01L27/115 , H01L27/11521 , H01L29/66825
摘要： Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.
摘要翻译：本发明的实施例公开了一种存储器件，其具有具有促进直线字线的源极触点的闪存单元阵列及其制造方法。阵列由隔离多个存储单元列的多个不相交的浅沟槽隔离（STI）区域组成。在形成隧道氧化物层和第一多晶硅层之后，源极列注入n型掺杂剂。植入的源极柱耦合到耦合到与阵列中的存储器单元相关联的多个源极区域的多个公共源极线。源极触点耦合到植入源极柱，用于提供与多个源极区域的电耦合。源触点与一排漏极触点共线，该排触点耦合到与一行存储器单元相关联的漏极区。与漏极触点排共线的源触点的布置允许直线字线形成。

93. 发明授权

US07820509B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07820509B2
公开(公告)日：2010-10-26
申请号：US11785793
申请日：2007-04-20
申请人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
发明人： Hiroyuki Ogawa , Hideyuki Kojima , Taiji Ema
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11531 , H01L27/11548
摘要： The method of manufacturing a semiconductor device, including a first region where a transistor including a gate electrode of a stacked structure is formed, a second region where a transistor including a gate electrode of a single-layer structure is formed, and a third region positioned in a boundary part between the first region and the second region, includes: depositing a first conductive film, patterning the first conductive film in the first region and the third region so that the outer edge is positioned in the third region, depositing the second conductive film, patterning the second conductive film to form a control gate in the first region while leaving the second conductive film, covering the second region and having the inner edge positioned inner of the outer edge of the first conductive film, and patterning the second conductive film in the second region to form the gate electrode.
摘要翻译：制造半导体器件的方法包括形成包括层叠结构的栅电极的晶体管的第一区域，形成包括单层结构的栅电极的晶体管的第二区域和位于在第一区域和第二区域之间的边界部分中包括：沉积第一导电膜，使第一区域和第三区域中的第一导电膜图形化，使得外边缘位于第三区域中，沉积第二导电膜膜，图案化第二导电膜，以在离开第二导电膜的同时在第一区域中形成控制栅极，覆盖第二区域并且使内边缘位于第一导电膜的外边缘的内侧，并且使第二导电膜在第二区域中形成栅电极。

94. 发明授权

US07767413B2 Reagent, medium, and method for detection of alicyclobacilus acidoterrestris 有权
标题翻译：用于检测脂环酸杆菌酸性杆菌的试剂，培养基和方法
公开(公告)号：US07767413B2
公开(公告)日：2010-08-03
申请号：US11918140
申请日：2006-04-18
申请人： Hiroyuki Ogawa , Mitsuyoshi Miyashita
发明人： Hiroyuki Ogawa , Mitsuyoshi Miyashita
IPC分类号： G01N33/53 , G01N33/569
CPC分类号： C12Q1/04 , C12Q1/045 , G01N2333/32
摘要： To supply the reagent, medium, and method for detection of Alicyclobacilus acidoterrestris, with which acidoterrestris can be rapidly detected and easily distinguished from acidocaldarius. After a sample including fruit juice is added to the medium for detection of Alicyclobacilus acidoterrestris containing chlor-2,3,5-triphenyl-2H-tetrazolium, acidoterrestris bacteria are detected based upon color change to red of the colony on the medium, which is kept at the temperature of 40 to 50° C.
摘要翻译：提供用于检测酸性胆酸菌的试剂，培养基和方法，其可以快速检测酸性胃肠杆菌并且容易地与酸中毒。将含有果汁的样品加入到含有氯-2,3,5-三苯基-2H-四唑的脂环酸杆菌酸性检测物的培养基中，根据培养基上的菌落的红色变化检测酸根杆菌保持在40至50℃的温度

95. 发明授权

US07632749B1 Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer 有权
标题翻译：具有电耦合的焊盘金属层和下金属层的半导体器件，而在焊盘金属层的中心区域下方的下金属层中形成孔
公开(公告)号：US07632749B1
公开(公告)日：2009-12-15
申请号：US10823970
申请日：2004-04-13
申请人： Hiroyuki Ogawa , Yider Wu , Nian Yang , Kuo-Tung Chang , Yu Sun
发明人： Hiroyuki Ogawa , Yider Wu , Nian Yang , Kuo-Tung Chang , Yu Sun
IPC分类号： H01L21/44
CPC分类号： H01L21/76816 , H01L24/05 , H01L2224/02166 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05554 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/14
摘要： A semiconductor device is disclosed and provided. The semiconductor device includes a pad metal layer having a perimeter area and a center area. Further, the semiconductor device has a lower metal layer having a plurality of apertures below the center area of the pad metal layer. Moreover, an interlayer dielectric is formed between the pad metal layer and the lower metal layer. In an embodiment, the semiconductor device also includes a plurality of vias formed in the interlayer dielectric. The vias electrically couple the pad metal layer and the lower metal layer. Additionally, the vias are located below the perimeter area of the pad metal layer.
摘要翻译：公开并提供了半导体器件。半导体器件包括具有周边区域和中心区域的焊盘金属层。此外，半导体器件具有在焊盘金属层的中心区域下方具有多个孔的下部金属层。此外，在焊盘金属层和下金属层之间形成层间电介质。在一个实施例中，半导体器件还包括形成在层间电介质中的多个通孔。通孔电连接焊盘金属层和下部金属层。另外，通孔位于垫金属层的周边区域的下方。

96. 发明申请

US20090215243A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090215243A1
公开(公告)日：2009-08-27
申请号：US12369859
申请日：2009-02-12
申请人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
发明人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/1052 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成限定有源区的隔离区，在半导体衬底上形成第一绝缘膜，形成第二绝缘膜，该第二绝缘膜具有与第一绝缘膜相同的蚀刻性能绝缘膜，通过使用基于碳氟化合物的蚀刻气体的干蚀刻从有源区域和隔离区域上的第一区域选择性地去除第二绝缘膜，通过在第一绝缘膜上暴露于第一绝缘膜上形成的残留膜含氧的气氛，通过湿式蚀刻从第一区域选择性地除去第一绝缘膜。

97. 发明申请

US20090194769A1 CRYSTALLIZING METHOD, THIN-FILM TRANSISTOR MANUFACTURING METHOD, THIN-FILM TRANSISTOR, AND DISPLAY DEVICE 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管和显示装置
公开(公告)号：US20090194769A1
公开(公告)日：2009-08-06
申请号：US12422762
申请日：2009-04-13
申请人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
发明人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
IPC分类号： H01L29/786 , H01L21/268 , B32B7/00 , H01L21/336
CPC分类号： H01L21/02686 , B23K26/066 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , Y10T428/265
摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.
摘要翻译：使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布并将脉冲激光束照射到待结晶的基板上以进行结晶。要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

98. 发明授权

US07531390B2 Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管和显示装置
公开(公告)号：US07531390B2
公开(公告)日：2009-05-12
申请号：US11136371
申请日：2005-05-25
申请人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
发明人： Masato Hiramatsu , Hiroyuki Ogawa , Masakiyo Matsumura
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , B23K26/066 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , Y10T428/265
摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.
摘要翻译：使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布并将脉冲激光束照射到待结晶的基板上以进行结晶。要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

99. 发明申请

US20090038536A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, OPTICAL MODULATION ELEMENT, AND DISPLAY APPARATUS 审中-公开
标题翻译：结晶装置，结晶方法，装置，光学调制元件和显示装置
公开(公告)号：US20090038536A1
公开(公告)日：2009-02-12
申请号：US12243426
申请日：2008-10-01
申请人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
发明人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
IPC分类号： C30B1/02
CPC分类号： C30B13/24 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1016
摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.
摘要翻译：第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，从而熔化物质。第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在物质上。照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

100. 发明申请

US20070293029A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070293029A1
公开(公告)日：2007-12-20
申请号：US11594856
申请日：2006-11-09
申请人： Hiroyuki Ogawa , Hideyuki Kojima
发明人： Hiroyuki Ogawa , Hideyuki Kojima
IPC分类号： H01L21/8234
CPC分类号： H01L21/823462 , H01L21/823857 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546
摘要： The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.
摘要翻译：制造半导体器件的方法包括以下步骤：在具有第一至第三区域的半导体衬底10上形成绝缘膜20，导电膜22和绝缘膜24; 去除绝缘膜24，导电膜22和形成在第二区域和第三区域中的绝缘膜20; 在第二区域和第三区域中形成绝缘膜38; 去除第一区域中的绝缘膜24和第三区域中的绝缘膜38; 在第三区域中形成绝缘膜44; 在形成导电膜52之后，在第一区域中图案化导电膜22,52以形成栅电极58; 以及图案化导电膜52以在第二区域和第三区域中形成栅极电极62，同时在栅极电极58上移除导电膜52。

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