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    • 93. 发明申请
    • IMAGE PICKUP APPARATUS AND CAMERA SHAKE CORRECTING APPARATUS APPLIED TO IMAGE PICKUP APPARATUS
    • 适用于图像拾取装置的图像拾取装置和摄像机修正装置
    • US20100188516A1
    • 2010-07-29
    • US12629459
    • 2009-12-02
    • Shuhei KanekoKeita TakahashiMasaki Higashiyama
    • Shuhei KanekoKeita TakahashiMasaki Higashiyama
    • H04N5/228
    • G03B5/00H04N5/2253H04N5/23248H04N5/23287
    • An image pickup apparatus includes a lens barrel unit having a photographing optical system, an image pickup unit that is displaced two-dimensionally to correct camera shake, a FPC that has a first extending section connected to the image pickup device and extending on a surface of the lens barrel unit and a second extending section that is bent at an end of the first extending section and fixed to the surface of the lens barrel unit, and a guide plate that guides the first extending section on the surface of the lens barrel unit, wherein when the image pickup unit moves in an X direction, a bent section is bent to absorb an amount of movement in the X direction, and when the image pickup unit moves in a Y direction, the first extending section bends to absorb an amount of movement in the Y direction.
    • 一种图像拾取装置包括具有拍摄光学系统的镜筒单元,二维位移以校正相机抖动的图像拾取单元,具有连接到图像拾取装置并且在图像拾取装置的表面上延伸的第一延伸部分的FPC 所述镜筒单元和在所述第一延伸部的端部弯曲并固定到所述镜筒单元的表面的第二延伸部以及引导所述第一延伸部在所述镜筒单元的表面上的引导板, 其中,当所述图像拾取单元沿X方向移动时,弯曲部弯曲以吸收X方向上的移动量,并且当所述图像拾取单元沿Y方向移动时,所述第一延伸部弯曲以吸收一定量的 运动在Y方向。
    • 95. 发明授权
    • Nonvolatile semiconductor memory device and method for fabricating the same
    • 非易失性半导体存储器件及其制造方法
    • US07518180B2
    • 2009-04-14
    • US11123169
    • 2005-05-06
    • Masatoshi AraiKeita Takahashi
    • Masatoshi AraiKeita Takahashi
    • H01L29/00
    • H01L21/28282H01L27/11568H01L29/66833H01L29/7923
    • A nonvolatile semiconductor memory device includes: a gate dielectric made of a multilayer dielectric that is formed on a substrate and discretely accumulates charges; a gate electrode formed on the gate dielectric; a pair of diffusion regions formed in the surface of the substrate with the gate electrode interposed therebetween and serving as a source and a drain; and a channel region existing between the diffusion regions. At least one of regions of the gate dielectric located between the pair of diffusion regions and lateral end parts of the gate electrode opposed to the diffusion regions includes a fixed charge accumulation region in which charges produced by irradiating the gate electrode with ultraviolet light can be accumulated, and at least one said diffusion region located below the fixed charge accumulation region is formed to overlap with the fixed charge accumulation region in plan configuration and extend beyond the fixed charge accumulation region toward the middle of the channel region in plan configuration.
    • 非易失性半导体存储器件包括:由多层电介质制成的栅极电介质,其形成在衬底上并离散地积累电荷; 形成在栅极电介质上的栅电极; 一对扩散区域,形成在基板的表面中,栅电极介于其间并用作源极和漏极; 以及存在于扩散区域之间的沟道区域。 位于一对扩散区域和与扩散区域相对的栅电极的侧端部之间的栅极电介质的至少一个区域包括固定的电荷累积区域,其中可以累积通过用紫外线照射栅极产生的电荷 并且位于固定电荷累积区域下方的至少一个所述扩散区域形成为与平面配置中的固定电荷累积区域重叠,并且在平面配置中延伸超过固定电荷累积区域朝向沟道区域的中间。
    • 96. 发明授权
    • Nonvolatile semiconductor memory device and fabrication method for the same
    • 非易失性半导体存储器件及其制造方法
    • US07510937B2
    • 2009-03-31
    • US12020744
    • 2008-01-28
    • Keita Takahashi
    • Keita Takahashi
    • H01L21/336
    • H01L27/11565H01L27/11573
    • The fabrication method for a nonvolatile semiconductor memory device having a memory cell area including memory cells and a peripheral circuit area adjacent to the memory cell area and including peripheral transistors, the method including the steps of: (1) forming a first active region in the memory cell area and a second active region in the peripheral circuit area in a substrate by forming isolation insulating films in the memory cell area and the peripheral circuit area so as to be away from a boundary therebetween; (2) forming a bottom insulating film and an intermediate charge trap film sequentially over the entire surface of the substrate; (3) removing a portion of the intermediate charge trap film formed in the peripheral circuit area using a first mask film; (4) forming a gate insulating film in the peripheral circuit area and also at least part of a top insulating film in the memory cell area; (5) forming a gate electrode film on the top insulating film and the gate insulating film; and (6) forming gate electrodes of memory cells and peripheral transistors by patterning the gate electrode film. The step (3) includes a step of aligning an end of the first mask film with the boundary in the substrate.
    • 一种具有包括存储单元的存储单元区域和与存储单元区域相邻并包括外围晶体管的外围电路区域的非易失性半导体存储器件的制造方法,所述方法包括以下步骤:(1)在所述存储单元区域中形成第一有源区域 存储单元区域和第二有源区域,通过在存储单元区域和外围电路区域中形成隔离绝缘膜以远离其间的边界; (2)在基板的整个表面上依次形成底部绝缘膜和中间电荷捕获膜; (3)使用第一掩模膜去除在外围电路区域中形成的中间电荷捕获膜的一部分; (4)在外围电路区域中形成栅极绝缘膜,并且在存储单元区域中形成顶部绝缘膜的至少一部分; (5)在顶部绝缘膜和栅极绝缘膜上形成栅电极膜; 以及(6)通过对栅极电极膜进行构图来形成存储器单元和外围晶体管的栅电极。 步骤(3)包括将第一掩模膜的端部与衬底中的边界对准的步骤。